共查询到19条相似文献,搜索用时 245 毫秒
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低温低真空CVD生长锗硅异质结外延材料 总被引:1,自引:0,他引:1
利用自行研制的超净低温低真空化学气相外延系统,应用锗烷和硅烷气本,在2英雨到3英雨的衬底硅片上生长了锗硅异质结外延层。在665℃,610℃和575℃不同温度分别生长了Si0.5Ge0.2,Ge0.5和Si0.65Ge0.35的异质外延层,获得了原子级表面和界面的异质外延材料。结果表明:外延生长速率和Ge组分由硅烷和锗烷的分压及生长时的温度控制。并利用X射线双昌衍射,扩展电阻和电化学C-V法研究了G 相似文献
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MOCVD生长高Al组分AlGaN材料研究 总被引:1,自引:0,他引:1
报道了用MOCVD在蓝宝石衬底上生长日盲型AlGaN基紫外探测器用的高质量AlN、AlGaN材料。通过优化AlN、AlGaN生长的工艺条件,如生长温度、生长压力及Ⅴ/Ⅲ比等,得到了器件级高质量的AlN、AlGaN外延材料。AlN外延膜X射线双晶衍射ω(002)面扫描曲线半高宽为97",ω(102)面扫描曲线半高宽为870",Al0.6Ga0.4N外延膜双晶衍射ω(002)面扫描曲线半高宽为240";使用原子力显微镜(AFM)对两种样品5μm×5μm区域的表面平整度进行了表征,AlN外延膜的粗糙度(Rms)为8.484nm,Al0.6Ga0.4N外延膜的粗糙度为1.104nm;透射光谱测试显示AlN和Al0.6Ga0.4N吸收带边分别为205nm和266nm,且都非常陡峭。 相似文献
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肖特基器件用重掺As衬底上外延层过渡区控制 总被引:1,自引:0,他引:1
掺As衬底外延片很大部分用于肖特基器件,器件对正向压降要求越来越高,因此对外延层参数之一的过渡区宽度提出了更高要求.讨论了影响过渡区的温度、生长速率、本征CAP层以及赶气等因素.通过一系列实验,找到了合理的生长条件,得到了完美的过渡区,解决了器件反向电压和正向压降之间的矛盾.在反向电压一致的条件下,正向压降平均降低了200 mV,产品整体成品率提高了两个百分点以上.研究结果已成功应用于大规模生产中. 相似文献
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隧道带间级联双波长可见光半导体激光器制备 总被引:3,自引:2,他引:1
利用金属有机物化学汽相淀积(MOCVD)一次外延生长了含有2个有源区的隧道带间级联双波长可见光半导体激光器(LD)材料。其隧道结为GaAs。2个有源区分别为AlGaAs单量子阱和GaInP多量子阱。SEM照片表明,材料生长质量良好。用生长的材料制备了双沟深腐蚀结构F P腔激光器。器件的阈值电流为177mA,未镀膜时的单面斜率效率为1.3W/A,远场为单瓣,垂直和水平方向的发散角分别为8°和34°。在输出光功率为100mW时,2个激射波长分别为699nm和795nm,与PL测试结果相一致。 相似文献
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D. W. Parent S. Kalisetty X. G. Zhang G. Zhao W. Zappone J. Robinson E. Heller J. E. Ayers F. C. Jain 《Journal of Electronic Materials》1997,26(6):710-714
We have conducted a study of the electrical and photoluminescence properties of ZnSe films grown by photoassisted metalorganic
vapor phase epitaxy (MOVPE) (250 Torr, 400°C) with ethyl iodide and hydrogen chloride as n-type dopant sources. A higher peak
electron concentration and a lower minimum resistivity were observed using hydrogen chloride (5.4 × 1018 cm−3, and .0070 ohm-cm, respectively), as opposed to ethyl iodide (1.55 × 1017 cm −3, and 0.067 ohm-cm, respectively). We show that the higher electron concentrations observed in the chlorine doped layers are
due to a higher incorporation of chlorine atoms than that of iodine atoms, and that this may be a result of the different
tetrahedral misfit factors for these atoms. Our photoluminescence and 77K Hall effect data support this conclusion. Growth
rate depression was observed to be more severe for iodine doped layers than for chlorine doped layers. Thus, it appears that
hydrogen chloride is a superior dopant source for low-temperature photoassisted MOVPE ZnSe growth of n-type layers for blue-green
laser diodes in the pressure-temperature regime investigated. 相似文献
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Fang Liu Zhihong Zhang Xin Rong Ye Yu Tao Wang Bowen Sheng Jiaqi Wei Siyuan Zhou Xuelin Yang Fujun Xu Zhixin Qin Yuantao Zhang Kaihui Liu Bo Shen Xinqiang Wang 《Advanced functional materials》2020,30(22)
Lattice polarity is a key point for hexagonal semiconductors such as GaN. Unfortunately, only Ga‐polarity GaN have been achieved on graphene till now. Here, the epitaxy of high quality nitrogen‐polarity GaN films on transferred graphene on non‐polar sapphire substrates by molecular beam epitaxy is reported. This success is achieved through atomic nitrogen irradiation, where C? N bonds are formed in graphene and provide nucleation sites for GaN and leading to N‐polarity GaN epitaxy. The N‐polarity characteristics are confirmed by chemical etching and transmission electron microscopy measurement. Due to the higher growth temperature of InGaN at N‐polarity than that at Ga‐polarity, green light emitting diodes are fabricated on the graphene‐assisted substrate, where a large redshift of emission wavelength is observed. These results open a new avenue for the polarity modulation of III‐nitride films based on 2D materials, and also pave the way for potential application in longer wavelength light emitting devices. 相似文献
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简要介绍了主要的红外探测器材料,包括半导体光电探测器材料,热释电材料和热敏电阻材料,回顾了HgCdTe材料的发展历史和现状,液相外延,分子束外延和金属有机物汽相外延是目前生长HgCdTe薄膜的3种主要技术,作者认为,薄膜材料是今后红外探测器材料的主要研究课题。 相似文献
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Si基CdTe中ZnTe缓冲层的生长影响着材料表面粗糙度和半峰宽。本文为了验证分子束外延Si基CdTe中采用迁移增强外延(MEE)技术生长的ZnTe缓冲层的生长参数对复合衬底材料表面粗糙度和半峰宽的影响,对涉及到的MEE生长过程中的主要参数包括:Zn与Te数值比、MEE生长温度、Zn与Te束流强度值进行研究,设计了三组实验,并使用高分辨X光衍射仪、白光干涉仪和红外傅里叶光谱仪测试外延薄膜生长结果,总结MEE生长参数对复合衬底材料质量影响,通过实验得到最优的外延工艺条件,提高材料质量。 相似文献
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D. W. Parent A. Rodriguez P. Li X. G. Zhang G. Zhao J. E. Ayers F. C. Jain 《Journal of Electronic Materials》2000,29(6):713-717
We have conducted a study of the compositional control of epitaxial ZnSySe1-y grown by photoassisted metal organic vapor phase epitaxy (MOVPE) (250 torr, 340°C, UV=14 mW/cm2) on GaAs (100) substrates. We have achieved lattice matched ZnSSe films on GaAs substrates using photoassisted growth using
dimethylzinc (DMZn), dimethylselenide (DMSe), and tertiary-butylmercaptan (t-BuSH) as precursors. In addition, we have obtained
sulfur compositions (y), ranging from 0.023 to unity (ZnS). The growth rate of the ZnS was 1 μm/h, which was previously unattainable
by our group using diethylsulfur. The closely lattice matched sample (y=0.07 as determined by high resolution x-ray diffraction)
showed a near band edge peak intensity (NBE) to deep level emission intensity (DLE) ratio of 77 to 1, as determined by room
temperature photoluminescence measurements. We have examined the sulfur incorporation as a function of source mole fractions,
UV intensity, and growth temperature and found that optimized growth conditions (optimized for range of compositions possible,
and NBE/DLE ratio) are XDMZn=1.5 × 10−4, XDMSe=3×10−4, UV=14 mW/cm2, growth temperature=340°C. XDMZn and XDMSe are the mole fractions of DMZn and DMSe, respectively. We have found the growth rate to be 1 μm/h for y=0.023 to 0.24 for
these optimized conditions. It was found that to achieve sulfur compositions of less than 0.9, the t-BuSH mole fractions had
to be kept low. Higher UV intensities increased the incorporation of selenium, while also lowering the material quality (NBE/DLE
ratios). We have shown that the optical material qualities of ZnSSe films grown with t-BuSH are much better than ZnSSe films
grown with DES. 相似文献
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本文介绍了薄膜晶体生长的最新技术--化学束外延(CBE),通过与分子束外延(MBE)和金属有机化学汽相沉积(MOCVD)技术的比较,说明了这一新技术的基本概念,生长动力学以及在半导体材料和激光器件方面的应用. 相似文献
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X. G. Zhang S. Kalisetty J. Robinson G. Zhao D. W. Parent J. E. Ayers F. C. Jain 《Journal of Electronic Materials》1997,26(6):697-704
ZnSySe1−yZnSe/GaAs (001) heterostructures have been grown by photoassisted metalorganic vapor phase epitaxy, using the sources dimethylzinc,
dimethylselenium, diethylsulfur, and irradiation by a Hg arc lamp. The solid phase composition vs gas phase composition characteristics
have been determined for ZnSyySe1−y grown with different mole fractions of dimethylselenium and different temperatures. Although the growth is not mass-transport
controlled with respect to the column VI precursors, the solid phase composition vs gas phase composition characteristics
are sufficiently gradual so that good compositional control and lattice matching to GaAs substrates can be readily achieved
by photoassisted growth in the temperature range 360°C ≤ T ≤ 400°C. ZnSe/GaAs (001) single heterostructures were grown by
a two-step process with ZnSe thicknesses in the range from 54 nm to 776 nm. Based on 004 x-ray rocking curve full width at
half maximums (FWHMs), we have determined that the critical layer thickness is hc ≤200 nm. Using the classical method involving strain, lattice relaxation is undetectable in layers thinner than 270 nm for
the growth conditions used here. Therefore, the rocking curve FWHM is a more sensitive indicator of lattice relaxation than
the residual strain. For ZnSySe1−y layers grown on ZnSe buffers at 400°C, the measured dislocation density-thickness product Dh increases monotonically with
the room temperature mismatch. Lower values of the Dh product are obtained for epitaxy on 135 nm buffers compared to the case
of 270 nm buffers. This difference is due to the fact that the 135 nm ZnSe buffers are pseudomorphic as deposited. For ZnSySe1−y layers grown on 135 nm ZnSe buffers at 360°C, the minimum dislocation density corresponds approximately to room-temperature
lattice matching (y ∼ 5.9%), rather than growth temperature lattice matching (y ∼ 7.6%). Epitaxial layers with lower dislocation
densities demonstrated superior optical quality, as judged by the near-band edge/deep level emission peak intensity ratio
and the near band edge absolute peak intensity from 300K photoluminescence measurements. 相似文献
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Dong Geon Lee Dong Hoe Kim Jae Myeong Lee Byeong Jo Kim Jun Young Kim Seong Sik Shin Hyun Suk Jung 《Advanced functional materials》2021,31(9):2006718
One of the most effective methods to achieve high-performance perovskite solar cells (PSCs) is to employ additives as crystallization agents or to passivate defects. Tri-iodide ion has been known as an efficient additive to improve the crystallinity, grain size, and morphology of perovskite films. However, the generation and control of this tri-iodide ion are challenging. Herein, an efficient method to produce tri-iodide ion in a precursor solution using a photoassisted process for application in PSCs is developed. Results suggest that the tri-iodide ion can be synthesized rapidly when formamidinium iodide (FAI) dissolved isopropyl alcohol (IPA) solution is exposed to LED light. Specifically, the photoassisted FAI–IPA solution facilitates the formation of fine perovskite films with high crystallinity, large grain size, and low trap density, thereby improving the device performance up to 22%. This study demonstrates that the photoassisted process in FAI dissolved IPA solution can be an alternative strategy to fabricate highly efficient PSCs with significantly reduced processing times. 相似文献