A Ring-Oscillator-Based Wide Locking Range Frequency Divider

This letter proposes a wide locking range injection locked frequency divider (ILFD) and describes the operation principle of the ILFD. The circuit is made of a dual band two-stage differential complementery metal–oxide–semiconductor (CMOS) ring oscillator and is based on MOS switches directly coupled to the differential outputs of the ring oscillator. The divide-by-two ILFD can provide wide locking range and the measurement results show that at the supply voltage of 1.8-V, the divider free-running frequencies are 1.36GHz and 2.3GHz, and at the incident power of 0dBm, the locking range is about 1.75GHz from the incident frequency 1.9GHz to 3.65GHz at low band and 2.55GHz from 2.95GHz to 5.5GHz at high band.     

A Low Voltage 0.35$mu$m CMOS FrequencyDivider With the Body Injection Technique

This letter proposes a new CMOS injection locked frequency divider (ILFD) fabricated in a 0.35 mum CMOS process. The ILFD circuit is realized with a cross-coupled CMOS LC-tank oscillator, and the injecticon is carried out through the bodies of cross- coupled transistors. The self-oscillating ILFD is injection-locked by second-(third-) harmonic input to obtain the division order of two (three). Measurement results show that at the supply voltage of 1.5 V and at the incident power of 10 dBm, the locking range is from the incident frequency 6.94 to 8.41 GHz in the divide-by-3 mode and the operation range is from the incident frequency 4.56 to 5.59 GHz in the divide-by-2 mode.     

A Wide Band Injection Locked Frequency Divider With Variable Inductor Load

This letter proposes a new wide band CMOS injection locked frequency divider (ILFD). The circuit is made of a two-stage differential CMOS ring oscillator and is based on MOS switches directly coupled to the differential outputs of the ring oscillator. A tuning circuit composed of inductors in series with a metal oxide semiconductor field effect transistor is used to extend the locking range. The divide-by-two ILFD can provide wide locking range and the measured results show that at the supply voltage of 1.8 V, the free-running frequency of the ILFD is operating from 0.92 to 3.6 GHz while the Vtune is tuned from 0 to 1.8 V. At the incident power of 0 dBm, this ILFD has a wide locking range from 1.15 to 7.4 GHz     

Wide-locking range ÷3 series-tuned injection-locked frequency divider

A new wide locking range series-tuned (ST) divide-by-3 injection-locked frequency divider (ILFD) using a standard 0.18 μm CMOS process is presented. The ÷3 ILFD circuit is realized with a ST cross-coupled n-core MOS LC-tank oscillator. Two direct-injection MOSFETs in series are used as a frequency doubler and a dynamic linear mixer to widen the locking range. The power consumption of the ILFD core is 10.56 mW. The divider’s free-running frequency is tunable from 3.529 to 3.828 GHz by tuning the varactor’s control bias, and at the incident power of 0 dBm the maximum locking range is 2.3 GHz (21.6 %), from the incident frequency 9.5 to 11.8 GHz. The operation range is 2.5 GHz (23.7 %), from 9.3 to 11.8 GHz.     

A Wide Locking Range Differential Colpitts Injection Locked Frequency Divider

This letter proposes a new wideband Colpitts injection locked frequency divider (ILFD) and describes the operation principle of the ILFD. The circuit consists of a differential CMOS LC-tank oscillator and a direct injection topology. The divide-by-two ILFD can provide wide locking range, and the measurement results show that at the supply voltage of 2.4 V, the tuning range of the free running ILFD is from 4.46 to 5.6 GHz, about 1.14 GHz, and the locking range of the ILFD is from 8.03 to 11.63 GHz, about 3.6 GHz, at the injection signal power of 0 dBm. The ILFD dissipates 19.92 mW at a supply voltage of 2.4 V and was fabricated in 1P6M 0.18 mum CMOS process. At the tuning voltage of 1.2 V, the measured phase noise of the free running ILFD is -110.8 dBc/Hz at 1 MHz offset frequency from 4.94 GHz and the phase noise of the locked ILFD is -135.4 dBc/Hz, while the input signal power is -4 dBm.     

A wide-locking range ÷3 injection-locked frequency divider using concurrent injection mechanisms

A new wide locking range divide-by-3 injection-locked frequency divider (ILFD) using a standard 0.18 μm CMOS process is presented. The ILFD uses two concurrent injection mechanisms with two independent push–push circuits to extend the locking range. It is realized with a cross-coupled n-core MOS LC-tank oscillator. The core power consumption of the ILFD core is 11.496 mW. The divider’s free-running oscillation frequency is tunable from 4.32 to 3.78 GHz by tuning the varactor’s control bias, and at the incident power of 0 dBm the maximum locking range is 3 GHz (25 %), from the incident frequency 10.5 to 13.5 GHz. The operation range is 3.6 GHz (30.76 %), from 9.9 to 13.5 GHz.     

Multi-Modulus LC Injection-Locked Frequency Dividers Using Single-Ended Injection

A new wide-locking range multi-modulus LC-tank injection locked frequency divider (ILFD) is proposed and was fabricated in a 0.18 $mu {rm m}$ CMOS process. The ILFD circuit is realized with a complementary MOS LC-tank oscillator and an injection composite composed of an inductor in series with an injection MOS. The two output terminals of the injection composite are connected to the resonator outputs. The ILFD can be used as a first-harmonic oscillator (ILO), even-modulo or odd-modulo oscillator depending upon the incident frequency of injection signal. At the supply voltage of 1.5 V, the free-running frequency is from 4.85 to 5.13 GHz, the current and power consumption of the divider without buffers are 2.78 and 4.17 mW, respectively. At the incident power of 0 dBm, the locking range in the divide-by-1(2, 3, 4) mode is from the incident frequency 3.72 to 8.69 (8.42 to 10.95, 13.66 to 16.03, 19.13 to 20.5) GHz.      

A low-voltage,low power divide-by-4 LC-tank injection-locked frequency divider

A low-voltage wide locking range injection-locked frequency divider (ILFD) using a standard 0.18?µm complementary metal-oxide-semiconductor process is presented. The ILFD is based on a differential LC VCO with one injection metal oxide semiconductor field effect transistor (MOSFET) for coupling external signals to the resonator. The low-voltage operation and wide locking range is obtained by boosting the gate voltage swing of the ILFD. Measurements show that at the supply voltage of 0.67?V, the divider's free-running frequency is tunable from 3.91 to 4.22?GHz, and the core power consumption is 1.87?mW. At the incident power of 0?dBm the divide-by-4 operation range is about 2?GHz (12.3%), from the incident frequency 15.3–17.3?GHz. The divide-by-2 locking range is about 5.1?GHz (77%), from the incident frequency 4.1–9.2?GHz.     

LC-tank divide-by-4 injection-locked frequency divider using the second-order harmonic feedback

A low voltage, wide locking range and operation range divide-by-4 injection-locked frequency divider (ILFD) is proposed in the paper and the ILFD was fabricated in the TSMC 90 nm RF-CMOS process. The divide-by-4 ILFD uses a cross-coupled voltage-controlled oscillator (VCO) with a parallel-tuned LC resonator and a three-transistor composite that acts as a linear and nonlinear mixer. At a drain-source bias of 0.6 V and at an incident power of 0 dBm, the operation range of the divide-by-4 ILFD is 5.3 GHz, from the incident frequency 21.1 GHz to 26.4 GHz, and the percentage of operation range is 22.31%. The locking range of the divide-by-4 ILFD is 1.4 GHz, from the incident frequency 21.1 GHz to 22.5 GHz, and the percentage of locking range is 6.42%. The core power consumption is 2.58 mW. The die area is 0.86 × 0.75 mm².     

Ka波段具有宽锁定范围高注入灵敏度的分频器*

This paper proposes a direct injection-locked frequency divider（ILFD） with a wide locking range in the Ka-band. A complementary cross-coupled architecture is used to enhance the overdriving voltage of the switch transistor so that the divider locking range is extended efficiently. New insights into the locking range and output power are proposed. A new method to analyze and optimize the injection sensitivity is presented and a layout technique to reduce the parasitics of the cross-coupled transistors is applied to decrease the frequency shift and the locking range degradation. The circuit is designed in a standard 90-nm CMOS process. The total locking range of the ILFD is 43.8% at 34.5 GHz with an incident power of –3.5 dBm. The divider IC consumes 3.6 mW of power at the supply voltage of 1.2 V. The chip area including the pads is 0.50.5 mm2.     

Colpitts Injection-Locked Frequency Divider Implemented With a 3-D Helical Transformer

This letter proposes a wide locking range and low power complementary Colpitts injection-locked frequency divider (ILFD) employing a 3-D helical transformer. The proposed ILFD consists of two single-ended complementary Colpitts oscillators coupled by a 3-D transformer to form a differential oscillator. The aim of using the 3-D transformer is to reduce chip size. The divide-by-2 LC-tank ILFD is implemented by adding an injection nMOS between the differential outputs of the voltage controlled oscillator. The measurement results show that at the supply voltage of 1.8 V, the divider free-running frequency is tunable from 4.24 to 4.8 GHz. At the incident power of 0 dBm, vtune=0.9 V, and V _DD=1.5 V, the locking range is about 2.4 GHz (26.9%), from the incident frequency 7.7 to 10.1 GHz. The core power consumption is 3.9 mW. The die area is 0.548times 0.656 mm².     

LC-Tank Colpitts Injection-Locked Frequency Divider With Record Locking Range

A new wide locking range injection-locked frequency divider (ILFD) using a standard 0.18-$mu$ m CMOS process is presented. The ILFD is based on a differential voltage controlled oscillator (VCO) with two embedded injection metal oxide semiconductor field effect transistors (MOSFETs) for coupling external signal to the resonators. The new VCO is composed of two single-ended VCOs coupled with cross-coupled MOSFETs and a transformer. Measurement results show that at the supply voltage of 1.5 V, the divider's free-running frequency is tunable from 5.85 to 6.17 GHz, and at the incident power of 0 dBm the locking range is about 7.1 GHz (65.4%), from the incident frequency 7.3 to 14.4 GHz. The ILFD has a record locking range percentage among published divide-by-2 $LC$-tank ILFDs.      

Low-power wide-locking-range injection-locked frequency divider for OFDM UWB systems

This paper describes a divide-by-two injection-locked frequency divider (ILFD) for frequency synthesizers as used in multiband orthogonal frequency division multiplexing (OFDM) ultra-wideband (UWB) systems. By means of dual-injection technique and other conventional tuning techniques, such as DCCA and varactor tuning, the divider demonstrates a wide locking range while consuming much less power. The chip was fabricated in the Jazz 0.18 μm RF CMOS process. The measurement results show that the divider achieves a locking range of 4.85 GHz (6.23 to 11.08 GHz) at an input power of 8 dBm. The core circuit without the test buffer consumes only 3.7 mA from a 1.8 V power supply and has a die area of 0.38 × 0.28 mm2. The wide locking range combined with low power consumption makes the ILFD suitable for its application in UWB systems.     

LC-Tank Colpitts Injection-Locked Frequency Divider With Even and Odd Modulo

A new injection-locked frequency divider (ILFD) using a standard 0.18 $mu$m CMOS process is presented. The ILFD is based on a differential Colpitts voltage controlled oscillator (VCO) with a direct injection MOSFET for coupling an external signal to the resonators. The VCO is composed of two single-ended VCOs coupled with two transformers. Measurement results show that at the supply voltage of 1.4 V the divider's free-running frequency is tunable from 4.77 to 5.08 GHz, and the proposed circuit can function as a first harmonic injection-locked oscillator, divide-by-2, -3, and -4 frequency divider. At the incident power of 0 dBm the divide-by-2 operation range is from the incident frequency 7.7 to 11.5 GHz and the divide-by-4 operation range is from the incident frequency 18.9 to 20.2 GHz.      

A low-power differential injection-locked frequency divider with output power flatness in 0.5 μm E/D-mode GaAs PHEMT

This study implemented an injection-locked frequency divider (ILFD) on Ka-band millimeter-wave communication systems in 0.5 μm enhancement/depletion-mode (E/D-mode) GaAs PHEMT technology. The ILFD presents a low-power design based on the differential-injection circuit topology without using any injectors. Compared with the conventional single-injection ILFD circuits, the proposed ILFD exhibits output power flatness and wide locking range characteristics with a power consumption of 0.9 mW under a 0.4 V supply. The self-oscillation frequency was chosen to be 20 GHz for divided-by-2 operation. The measured locking range is approximately 11.5 GHz ranging from 32.5 GHz to 44 GHz when the injection power level is 5 dBm. The locking range exhibiting a 3 dB power roll-off characteristic at output is 10.5 GHz ranging from 33 GHz to 42.5 GHz.     

Wide locking range divide-by-4 LC-tank injection-locked frequency divider using series-mixers

A novel wide locking range divide-by-4 injection-locked frequency divider (ILFD) is proposed in this paper and was implemented in the TSMC 0.18 μm 1P6 M CMOS process. The divide-by-4 ILFD uses a cross-coupled voltage-controlled oscillator with a parallel-tuned LC resonator and two mixers in series to serve as an injection device. At the drain-source bias of 0.8 V and at the incident power of 0 dBm, the locking range of the divide-by-4 is 1.7 GHz, from the incident frequency 10.3–12.0 GHz, and the percentage of locking range is 15.25 %. The core power consumption is 11.98 mW. At drain-source voltage of 0.9 V, the locking range of the divide-by-4 is 2 GHz, from the incident frequency 10.1–12.1 GHz, and the percentage is 18.0 %. At drain-source voltage of 1.0 V, the locking range is 2.2 GHz (20.0 %) from 9.9 to 12.1 GHz. The die area is 0.492 × 0.819 mm².     

An Active-Inductor Injection Locked Frequency Divider With Variable Division Ratio

This letter presents a wide-locking range, body-injected, injection locked frequency divider (ILFD) with tunable active inductors (TAIs) and variable division ratio. The ILFD was fabricated in the 0.18 mum 1P6M CMOS technology, and it has the modulus of 2, 3, 4, and 5, and can be used as a first-harmonic injection-locked oscillator (ILO). The divide-by-3 function is performed by injecting differential a signal to the bodies of cross-coupled transistors in the VCO. At the supply voltage of 1.5 V, the free-running divider is tunable from 0.53 to 1.72 GHz. At the incident power of 0 dBm the operation range in the first-harmonic ILO is from the incident frequency 0.53 to 3.2 GHz. The operation range in the divide-by-3 (divide-by-2) mode is about 3.59 (4.13) GHz, from the incident frequency 1.55 to 5.14 (0.87 to 5.0) GHz.     

Circuit Techniques for CMOS Divide-By-Four Frequency Divider

This letter describes circuit techniques for obtaining divide-by-four (divide4) frequency dividers (FDs) from CMOS ring-oscillator based injection locked frequency dividers (ILFDs). The circuit is made of a two-stage differential CMOS ring oscillator and is based on MOS switches directly coupled to the differential outputs of the ring oscillator. At the supply voltage of 1.8V and at the incident power of 0dBm, for a dual-band ILFD, the divide4 ILFD can provide a locking range of 6.3% from 5.39 to 6.12GHz at low band and 5.9% from 8.84 to 9.38GHz at high band when the dc bias of MOS switches V_inj changes from 0.7 to 1.1V     

Low-power divide-by-3 injection-locked frequency dividers implemented with injection transformers

A new divide-by-3 injection-locked frequency divider (ILFD) is proposed. The ILFD consists of a 7.6 GHz voltage controlled oscillator (VCO) and two transformers, which are in series with the crosscoupled transistors in the VCO for signal injection. The proposed CMOS ILFD has been implemented with the TSMC 0.13 μm CMOS technology. At the supply voltage of 0.8 V, the core power consumption is 1.25 mW, and the free-running frequency of the ILFD is tunable from 7.2 to 7.87 GHz. At the input power of 0 dBm, the total divide-by-3 locking range is from 21.56 to 23.63 GHz as the tuning voltage is varied from 0.0 to 0.8 V. The phase noise of the locked ILFD output is lower than that of the free-running ILFD in the divide-by-3 mode.     

基于40 nm CMOS工艺的毫米波注入锁定分频器

设计了一款应用于60 GHz频率综合器的二分频注入锁定分频器。通过优化射频注入和直流偏置网络,降低了注入信号损耗,提高了注入效率;通过优化注入管和交叉管尺寸、减小寄生电容、降低振荡摆幅,提高了注入效率,降低了功耗;电磁仿真毫米波段电感,建立集总等效电路模型,实现了高感值、低串联电阻的差分电感的设计,提高了锁定范围。电路设计采用SMIC 40 nm 1P6M RF CMOS工艺,芯片核心面积为0.016 mm²。仿真结果表明,在0.8 V电源电压下,电路功耗为5.5 mW,工作频率范围为55.2~61.2 GHz,注入锁定范围为6.0 GHz,满足低功耗和宽锁定范围的要求,适用于毫米波段锁相环频率综合器。