High-precision,large-domain three-dimensional manipulation of nano-materials for fabrication nanodevices

Nanoscaled materials are attractive building blocks for hierarchical assembly of functional nanodevices, which exhibit diverse performances and simultaneous functions. We innovatively fabricated semiconductor nano-probes of tapered ZnS nanowires through melting and solidifying by electro-thermal process; and then, as-prepared nano-probes can manipulate nanomaterials including semiconductor/metal nanowires and nanoparticles through sufficiently electrostatic force to the desired location without structurally and functionally damage. With some advantages of high precision and large domain, we can move and position and interconnect individual nanowires for contracting nanodevices. Interestingly, by the manipulating technique, the nanodevice made of three vertically interconnecting nanowires, i.e., diode, was realized and showed an excellent electrical property. This technique may be useful to fabricate electronic devices based on the nanowires'' moving, positioning, and interconnecting and may overcome fundamental limitations of conventional mechanical fabrication.     

Growth of catalyst-free high-quality ZnO nanowires by thermal evaporation under air ambient

ZnO nanowires have been successfully fabricated on Si substrate by simple thermal evaporation of Zn powder under air ambient without any catalyst. Morphology and structure analyses indicated that ZnO nanowires had high purity and perfect crystallinity. The diameter of ZnO nanowires was 40 to 100 nm, and the length was about several tens of micrometers. The prepared ZnO nanowires exhibited a hexagonal wurtzite crystal structure. The growth of the ZnO nanostructure was explained by the vapor-solid mechanism. The simplicity, low cost and fewer necessary apparatuses of the process would suit the high-throughput fabrication of ZnO nanowires. The ZnO nanowires fabricated on Si substrate are compatible with state-of-the-art semiconductor industry. They are expected to have potential applications in functional nanodevices.     

Electrical characterization of C-coated nickel silicide nanowires grown on Ni-loaded Si substrate

Carbon-coated nickel silicide nanowires (C-coated NiSi NWs) were grown in a home-made chemical vapor deposition (CVD) reactor. The coating of semiconductor or metal nanowires with nano-sized carbon layer is effective to prevent the oxidation of the nanowires, resulting in the stabilization of electrical properties of nanodevices. The growth of the NiSi nanowires and the coating of the NWs with carbon layers simultaneously took place in the reaction. The current-voltage curve of individual NiSi nanowire showed highly linear behavior, indicating the good ohmic contact without the insulating layer. The resistivity of the NiSi nanowire was about 370 ΜΩ-cm at room temperature, decreased monotonically as the temperature was lowered, and became saturated at low temperatures, indicating the growth of metallic NiSi nanowires. Field emission measurements showed that the C-coated NiSi nanowires were an excellent field emitter with large emission current densities at very low electric field.     

Solution-phase synthesis of metal and/or semiconductor homojunction/heterojunction nanomaterials

The design and architecture of programmable metal-semiconductor nanostructures with excellent optoelectronic properties from metal and semiconductor building blocks with nanoscale dimensions have been a key aim of material scientists due to their central roles in the fabrication of electronic, optical, and optoelectronic nanodevices. This review focuses on the latest advances in the solution-phase synthesis of metal and/or semiconductor homojunction/heterojunction nanomaterials. It begins with the simplest construction of metal/metal and semiconductor/semiconductor homojunctions, and then highlights the synthetic design of metal/metal and semiconductor/semiconductor heterojunction nanostructures with different building blocks. Special emphasis is placed on metal/semiconductor heterojunction nanomaterials, which are the most challenging and promising nanomaterials for future applications in optoelectronic nanodevices. Finally, this review concludes with personal perspectives on the directions for future research in this field.     

Synthesis and Photoluminescence of Eu2+-Doped α-Silicon Nitride Nanowires Coated with Thin BN Film

A feasible doping strategy is introduced to synthesize Eu²⁺-doped α-Si₃N₄ nanowires coated with a thin BN film. The nanowires were characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and a fluorescence spectrophotometer. The Eu²⁺-doped α-Si₃N₄ nanowires emitted strong yellow light, which is related to the 4 f ⁶5 d –4 f ⁷ transition of Eu²⁺, upon a broad excitation wavelength range between 250 and 450 nm. The obtained nanowires provided a potential candidate for application in optical nanodevices, as well as in white LEDs.     

Synthesis and characterisation of self-assembled SiC nanowires and nanoribbons by using sol–gel carbothermal reduction

ABSTRACT

Hexagonal-shaped 3C-SiC nanowires were grafted onto SiC nanoribbons by a sol–gel technique using ferrocene as catalyst. The nanowire diameter (～200?nm) and the nanoribbon width–thickness ratio (20:1) are uniform along their entire length. Their length is about several tens to several hundreds of micrometres. Meanwhile, single SiC nanostructure (nanowire or nanoribbon) was obtained by adjusting temperature field. A novel cooperative growth mechanism of vapour–liquid–solid and vapour–solid was proposed for the self-assembled SiC nanostructure. The self-assembled SiC nanowires and nanoribbons exhibit two strong broad photoluminescence peaks at wavelengths of about 373 and 471?nm, which are significantly shifted to the blue compared with the reported luminescence of SiC nanowires. This study will pave a way for the controllable synthesis of SiC nanowires and nanoribbons, and provide a simple method to connect them together firmly as potential applications for nanodevices in future.     

Gas sensing properties of multiple networked GaN/WO3 core-shell nanowire sensors

GaN nanowires and GaN-core/WO₃-shell nanowires were synthesized by the thermal evaporation of GaN powders followed by the sputter-deposition of WO₃ and their gas sensing properties were examined. The multiple networked pristine GaN nanowire sensors showed responses of approximately 125%, 140%, 146%, 159%, and 183% to 1, 2, 3, 4, and 5 ppm NO₂ gases, respectively. These responses are comparable to those obtained previously using metal oxide semiconductor one-dimensional nanostructure sensors. The responses of the nanowires to 1, 2, 3, 4, and 5 ppm NO₂ gases were improved 1.3, 1.4, 1.6, 1.7 and 1.8 fold, respectively, further through the encapsulation of GaN nanowires with a WO₃ thin film. The improvement in the response of GaN nanowires to NO₂ gas by encapsulation is attributed to the modulation of electron transport at GaN–WO₃ heterojunction. The electron transport in the core-shell nanowires is modulated by the heterojunction with an adjustable energy barrier height, resulting in an enhanced sensing property of the core-shell nanostructures.     

Ferroelectric memory based on nanostructures

ABSTRACT: In the past decades, ferroelectric materials have attracted wide attention due to their applications in nonvolatile memory devices (NVMDs) rendered by the electrically switchable spontaneous polarizations. Furthermore, the combination of ferroelectric and nanomaterials opens a new route to fabricating a nanoscale memory device with ultrahigh memory integration, which greatly eases the ever increasing scaling and economic challenges encountered in the traditional semiconductor industry. In this review, we summarize the recent development of the nonvolatile ferroelectric field effect transistor (FeFET) memory devices based on nanostructures. The operating principles of FeFET are introduced first, followed by the discussion of the real FeFET memory nanodevices based on oxide nanowires, nanoparticles, semiconductor nanotetrapods, carbon nanotubes, and graphene. Finally, we present the opportunities and challenges in nanomemory devices and our views on the future prospects of NVMDs.     

Self-organized carbon connections between catalyst particles on a silicon surface exposed to atmospheric-pressure Ar + CH4 microplasmas

Ag nanoparticles and Fe-coated Si micrograins were separately deposited onto Si(1 0 0) surfaces and then exposed to an Ar + CH₄ microplasma at atmospheric pressure. For the Ag nanoparticles, self-organized carbon nanowires, up to 400 nm in length were produced, whereas for the Fe-coated Si micrograins carbon connections with the length up to 100 μm were synthesized on the plasma-exposed surface area of about 0.5 mm². The experiment has revealed that long carbon connections and short nanowires demonstrate quite similar behavior and structure. While most connections/nanowires tended to link the nearest particles, some wires were found to ‘dissolve’ into the substrate without terminating at the second particle. Both connections and nanowires are mostly linear, but long carbon connections can form kinks which were not observed in the carbon nanowire networks. A growth scenario explaining the carbon structure nucleation and growth is proposed. Multiscale numerical simulations reveal that the electric field pattern around the growing connections/nanowires strongly affects the surface diffusion of carbon adatoms, the main driving force for the observed self-organization in the system. The results suggest that the microplasma-generated surface charges can be used as effective controls for the self-organized formation of complex carbon-based nano-networks for integrated nanodevices.     

Determining factors of thermoelectric properties of semiconductor nanowires

It is widely accepted that low dimensionality of semiconductor heterostructures and nanostructures can significantly improve their thermoelectric efficiency. However, what is less well understood is the precise role of electronic and lattice transport coefficients in the improvement. We differentiate and analyze the electronic and lattice contributions to the enhancement by using a nearly parameter-free theory of the thermoelectric properties of semiconductor nanowires. By combining molecular dynamics, density functional theory, and Boltzmann transport theory methods, we provide a complete picture for the competing factors of thermoelectric figure of merit. As an example, we study the thermoelectric properties of ZnO and Si nanowires. We find that the figure of merit can be increased as much as 30 times in 8-Å-diameter ZnO nanowires and 20 times in 12-Å-diameter Si nanowires, compared with the bulk. Decoupling of thermoelectric contributions reveals that the reduction of lattice thermal conductivity is the predominant factor in the improvement of thermoelectric properties in nanowires. While the lattice contribution to the efficiency enhancement consistently becomes larger with decreasing size of nanowires, the electronic contribution is relatively small in ZnO and disadvantageous in Si.     

Pristine, adherent ultrathin gold nanowires on substrates and between pre-defined contacts via a wet chemical route

We demonstrate a simple strategy of obtaining clean, ultrathin single crystal Au nanowires on substrates and interconnecting pre-defined contacts with an insight into the growth mechanism. The pristine nature enables electron transport measurement through such ultrathin wires and opens up possibilities of exploring its properties for a wide range of applications.     

Growth and Application of ZnO Nanostructures

Nanostructures are the building blocks of future nanodevices and thus methods for fabricating nanostructures of various materials in various forms are fundamentally important. Among those nanostructures ZnO has received much attention over the past few years due to the wide range of research by many different groups focused on different novel nanostructures with different properties. Although ZnO nanowires have been intensively studied, there are only a few methods that showed promising characteristics for practical applications. Without much effort, it can be grown in many different nanostructure forms, thus allowing various novel devices to be achieved. In this study, we intend to review those methods that enable nanostructure growth to be more controllable and feasible for applications. The methods for fabricating ZnO nanostructures are introduced in the first part. In the second part, the application of those nanostructures are mentioned and explained. Finally, the future realization of nanodevices is discussed.     

CdTe semiconductor nanowires and NiFe ferro-magnetic metal nanowires electrodeposited into cylindrical nano-pores on the surface of anodized aluminum

Cylindrical nano-pores of an anodized aluminum oxide layer on the surface of bulk aluminum were used as templates for the electrochemical growth of semiconductor and magnetic nanowires. The electrodeposition of CdTe and NiFe was investigated to determine the optimum conditions for each nanowire growth over a wide range of cathode potentials. The desired composition of Cd₅₀Te₅₀ and Ni₈₀Fe₂₀ was achieved by controlling the cathode potential during electrodeposition. Temperature dependences of resistance for CdTe nanowires confirmed the semiconductor character with amorphous behavior at low temperature, while those of NiFe nanowires showed metallic character. The anisotropic magnetoresistance (AMR) of NiFe nanowires reached 1.9% at 300 K.     

Giant Persistent Photoconductivity of the WO3 Nanowires in Vacuum Condition

A giant persistent photoconductivity (PPC) phenomenon has been observed in vacuum condition based on a single WO₃ nanowire and presents some interesting results in the experiments. With the decay time lasting for 1 × 10⁴ s, no obvious current change can be found in vacuum, and a decreasing current can be only observed in air condition. When the WO₃ nanowires were coated with 200 nm SiO₂ layer, the photoresponse almost disappeared. And the high bias and high electric field effect could not reduce the current in vacuum condition. These results show that the photoconductivity of WO₃ nanowires is mainly related to the oxygen adsorption and desorption, and the semiconductor photoconductivity properties are very weak. The giant PPC effect in vacuum condition was caused by the absence of oxygen molecular. And the thermal effect combining with oxygen re-adsorption can reduce the intensity of PPC.     

Synthesis and mechanical properties characterization of multiferroic BiFeO3-CoFe2O4 composite nanofibers

Multiferroic nanofibers with excellent mechanical properties have great potential applications in multifunctional nanodevices. BiFeO₃-CoFe₂O₄ (BFO-CFO) composite nanofibers with different molar ratios were successfully synthesized by sol-gel-based electrospinning method. The mechanical properties of BFO-CFO composite nanofibers were examined by nanoindentation technique, and further investigated by amplitude modulation-frequency modulation (AM-FM) method based on atomic force microscopy (AFM). The results of AM-FM showed that the elastic moduli of BFO-CFO composite nanofibers increased with the increase of CFO ratio, which was consistent with the results of nanoindentation. These results indicated that AFM-based AM-FM is a powerful method for nondestructively investigating the mechanical properties of materials at nanoscale, and that the results of BFO-CFO composite nanofibers are also of practical importance for the future applications of multifunctional nanodevices.     

Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts

We have fabricated the vertically aligned coaxial or longitudinal heterostructure GaN/InGaN nanowires. The GaN nanowires are first vertically grown by vapor–liquid-solid mechanism using Au/Ni bi-metal catalysts. The GaN nanowires are single crystal grown in the [0001] direction, with a length and diameter of 1 to 10 μm and 100 nm, respectively. The vertical GaN/InGaN coaxial heterostructure nanowires (COHN) are then fabricated by the subsequent deposition of 2 nm of In_xGa_1-xN shell on the surface of GaN nanowires. The vertical GaN/InGaN longitudinal heterostructure nanowires (LOHN) are also fabricated by subsequent growth of an InGaN layer on the vertically aligned GaN nanowires using the catalyst. The photoluminescence from the COHN and LOHN indicates that the optical properties of GaN nanowires can be tuned by the formation of a coaxial or longitudinal InGaN layer. Our study demonstrates that the bi-metal catalysts are useful for growing vertical as well as heterostructure GaN nanowires. These vertically aligned GaN/InGaN heterostructure nanowires may be useful for the development of high-performance optoelectronic devices.     

One-dimensional self-assembly of planar pi-conjugated molecules: adaptable building blocks for organic nanodevices

In general, fabrication of well-defined organic nanowires or nanobelts with controllable size and morphology is not as advanced as for their inorganic counterparts. Whereas inorganic nanowires are widely exploited in optoelectronic nanodevices, there remains considerable untapped potential in the one-dimensional (1D) organic materials. This Account describes our recent progress and discoveries in the field of 1D self-assembly of planar pi-conjugated molecules and their application in various nanodevices including the optical and electrical sensors. The Account is aimed at providing new insights into how to combine elements of molecular design and engineering with materials fabrication to achieve properties and functions that are desirable for nanoscale optoelectronic applications. The goal of our research program is to advance the knowledge and develop a deeper understanding in the frontier area of 1D organic nanomaterials, for which several basic questions will be addressed: (1) How can one control and optimize the molecular arrangement by modifying the molecular structure? (2) What processing factors affect self-assembly and the final morphology of the fabricated nanomaterials; how can these factors be controlled to achieve the desired 1D nanomaterials, for example, nanowires or nanobelts? (3) How do the optoelectronic properties (e.g., emission, exciton migration, and charge transport) of the assembled materials depend on the molecular arrangement and the intermolecular interactions? (4) How can the inherent optoelectronic properties of the nanomaterials be correlated with applications in sensing, switching, and other types of optoelectronic devices? The results presented demonstrate the feasibility of controlling the morphology and molecular organization of 1D organic nanomaterials. Two types of molecules have been employed to explore the 1D self-assembly and the application in optoelectronic sensing: one is perylene tetracarboxylic diimide (PTCDI, n-type) and the other is arylene ethynylene macrocycle (AEM, p-type). The materials described in this project are uniquely multifunctional, combining the properties of nanoporosity, efficient exciton migration and charge transport, and strong interfacial interaction with the guest (target) molecules. We see this combination as enabling a range of important technological applications that demand tightly coupled interaction between matter, photons, and charge. Such applications may include optical sensing, electrical sensing, and polarized emission. Particularly, the well-defined nanowires fabricated in this study represent unique systems for investigating the dimensional confinement of the optoelectronic properties of organic semiconductors, such as linearly polarized emission, dimensionally confined exciton migration, and optimal pi-electronic coupling (favorable for charge transport). Combination of these properties will make the 1D self-assembly ideal for many orientation-sensitive applications, such as polarized light-emitting diodes and flat panel displays.     

Multifunctional Shape Memory Films for a Flexible Electrical Sensor

Shape memory polymers exhibit great potential for applications in aeronautics, astronautics, biomedicine, intelligent robots, and electronics. Based on traditional fabrication methods, as-prepared shape memory micro-/nanodevices are brittle with poor deformability. For instance, these devices shatter or crack when they are bent, which greatly limit their practical applications. In particular, there has been little use of shape memory films for high performance sensing devices in electrical circuits. Here, a novel polyvinyl alcohol (PVA) film is fabricated from a mixture of graphene nanosheets (GNs), sisal cellulose microcrystals (CNC), polyamine-functionalized perylene bisimide derivative (APBI), and PVA through a simple electrospinning technique. These novel PVA films exhibit excellent thermal, mechanical, and shape memory properties. Moreover, after spin-coating with Ag nanowires, the PVA films show excellent conductivity and flexibility in shape memory recovery cycles, and are used as a flexible sensing device in the circuit.     

生物分子模板法制备不同形貌硫化铅纳米材料

通过生物分子模板法制备了不同形貌的硫化铅纳米材料,对比实验发现半胱氨酸的添加量及铅-半胱氨酸前驱体的形貌对最终产物的生成有很大影响.通过控制半胱氨酸的加入量,制备了树枝状、分级结构及多臂硫化铅纳米材料,这些形貌的成功制备将对功能性纳米器件的组装有重要意义.所采用的生物分子模板法具有简单、环境友好等优势,有利于其它半导体纳米材料的大规模制备.     

Electrochemical synthesis of poly(p-phenylene) and poly(p-phenylene)/TiO2 nanowires in an ionic liquid

This study shows for the first time that poly(p-phenylene) (PPP) nanowires can be easily obtained by electrochemical synthesis at room temperature. The method involves the template assisted electropolymerization of benzene in the air and water stable ionic liquid 1-hexyl-3-methylimidazolium tris(pentafluoroethyl)trifluorophosphate ([HMIm]FAP). Track-etched polycarbonate membranes (PC) with an average pore diameter of 90 nm were used as templates. Dense and highly flexible bundles of PPP nanowires with a high aspect ratio (>160) were easily obtained by this method. In addition, we present here our first results to obtain PPP/TiO₂ nanowires by the combination of a sol–gel technique with electropolymerization. HR-SEM, TEM and EDX were used for the structural characterization of the nanowires.