CuIn1−xAlxS2 thin films prepared by sulfurization of metallic precursors

CuIn_1−xAl_xS₂ thin films (x = 0, 0.09, 0.27, 0.46, 0.64, 0.82 and 1) with thicknesses of approximately 1 μm were formed by the sulfurization of DC sputtered Cu-In-Al precursors. All samples were sulfurized in a graphite container for 90 min at 650 °C in a 150 kPa Ar + S atmosphere. Final films were studied via X-ray diffraction (XRD), scanning electron microscopy (SEM) and micro-Raman spectroscopy. It was found that all samples were polycrystalline in nature and their lattice parameters varied slightly nonlinearly from {a = 5.49 Å, c = 11.02 Å} for CuInS₂ to {a = 5.30 Å, c = 10.36 Å} for CuAlS₂. No unwanted phases such as Cu_2−xS or others were observed. Raman were recorded at a room temperature and the most intensive and dominant A₁ phonon frequency varied nonlinearly from 294 cm⁻¹ (CuInS₂) to 314 cm⁻¹ (CuAlS₂).     

Effects of Mg substitution on the structural, optical, and electrical properties of CuAlO2 thin films

Mg-doped CuAlO₂ thin films are prepared by the chemical solution method. The XRD results show that the solid solubility of Mg species on Al sites in CuAlO₂ lattice is lower than 2 at.%. When less than 2 at.% of Mg is added to the CuAlO₂ film, the surface roughness of the films was reduced with Mg substitution. Moreover, the c-axis orientation of the films improves because the in-plane fusion between CuAlO₂ crystallites is hindered. Optical and electrical measurements show that substituting Al³⁺ in the films with Mg²⁺ increases both their transmittance in the visible region and their optical band gaps. As well, their electrical conductivity is enhanced. At 300 K, the conductivity of the 1 at.% Mg-doped sample is up to 5.2 × 10⁻³ S/cm. Thus, Mg-doped CuAlO₂ films may have potential applications as transparent conductive oxides.     

Structural, optical and electrical properties of Mg-doped CuCrO2 thin films by sol-gel processing

CuCr_1−xMg_xO₂ (x = 0, 0.03, 0.05, 0.07) thin films were prepared on sapphire substrates by sol-gel processing. The effect of Mg concentrations on the structural, morphological, electrical and optical properties was investigated. Highly transparent ≧70% Mg-doped CuCrO₂ thin films with p-type conduction and semiconductor behavior were obtained. The microstructure of the systems was characterized by scanning electron microscopy and the roughness increased as the content of Mg increased. The photoluminescence spectra results indicated that it had a green luminescent emission peak at the 530 nm. In this paper, CuCr_0.95Mg_0.05O₂ film has the lowest resistivity of 7.34 Ω cm with direct band gap of 3.11 eV. In order to investigate the conduction mechanism, the energy band of the CuCrO₂ films is constructed based on the grain-boundary scattering.     

Structural, optical and electrical properties of In-doped Cd2SnO4 thin films by spray pyrolysis method

Preparation of highly conducting and transparent In-doped Cd₂SnO₄ thin film by spray pyrolysis method at a substrate temperature of 525 °C is reported. In-doping concentration is varied between 1 and 5 wt.%. The effect of In-doping on structural, optical and electrical properties was investigated using different techniques such as X-ray diffraction, atomic force microscopy, optical transmittance and Hall measurement. X-ray diffraction studies revealed that the films are polycrystalline with cubic crystal structure. The undoped and In-doped Cd₂SnO₄ films exhibit excellent optical transparency. The average optical transmittance is ∼87% in the visible range for 3 wt.% In-doping. Further In-doping widens the optical band gap from 2.98 ± 0.1 eV to 3.04 ± 0.1 eV. A minimum resistivity of 1.76 ± 0.2 × 10⁻³ Ω cm and maximum carrier concentration of 9.812 ± 0.4 × 10¹⁹ cm⁻³ have been achieved for 1 wt.% In-doping in Cd₂SnO₄ thin films.     

Structural, morphological and optical properties of Bi2−xSbxSe3 thin films grown by electrodeposition

Ternary single-phase Bi_2−xSb_xSe₃ alloy thin films were synthesized onto Au(1 1 1) substrates from an aqueous solution containing Bi(NO₃)₃, SbCl₃, and SeO₂ at room temperature for the first time via the electrodeposition technique. The electrodeposition of the thin films was studied using cyclic voltammetry, compositional, structural, optical measurements and surface morphology. It was found that the thin films with different stoichiometry can be obtained by controlling the electrolyte composition. The as-deposited films were crystallized in the preferential orientation along the (0 1 5) plane. The SEM investigations show that the film growth proceeds via nucleation, growth of film layer and formation of spherical particles on the film layer. The particle size and shape of Bi_2−xSb_xSe₃ films could be changed by tuning the electrolyte composition. The optical absorption spectra suggest that the band gap of this alloy varied from 0.24 to 0.38 eV with increasing Sb content from x = 0 to x = 0.2.     

水热电沉积法生长Co9S8薄膜电极

采用水热电沉积法在泡沫镍基体上原位沉积Co_9S_8薄膜,并对其形貌、组成、结构和电化学性能进行表征和测试。结果表明,镍基Co_9S_8薄膜呈花瓣片状,并具有优异的电化学性能,其在电流密度为10mA/cm~2时,比电容可高达2538.7 F/g。即使电流密度扩大至50 mA/cm~2时,比电容依然可达1930.7 F/g。经过1000次循环(电流密度为20 mA/cm2),比电容仍可达为1825.2 F/g,电容保有率72.8%,经过1500次循环后,电容保有率61.4%。     

Effect of Cr7C3 on the mechanical, thermal, and electrical properties of Cr2AlC

In this work, phase pure Cr₂AlC and impure Cr₂AlC with Cr₇C₃ have been fabricated to investigate the mechanical, thermal, and electrical properties. The thermal expansion coefficient is determined as 1.25 × 10⁻⁵ K⁻¹ in the temperature range of 25-1200 °C. The thermal conductivity of the Cr₂AlC is 15.73 W/m K when it is measured at 200 °C. With increasing temperature from 25 °C to 900 °C, the electrical conductivity of Cr₂AlC decreases from 1.8 × 10⁶ Ω⁻¹ m⁻¹ to 5.6 × 10⁵ Ω⁻¹ m⁻¹. For the impure phase of Cr₇C₃, it has a strengthening and embrittlement effect on the bulk Cr₂AlC. And the Cr₂AlC with Cr₇C₃ would result in a lower high-temperature thermal expansion coefficient, thermal conductivity, specific heat capacity and electrical conductivity.     

Characterization and electrochemical properties of carbon-coated Li4Ti5O12 prepared by a citric acid sol-gel method

Since carbon coating can effectively improve electrical wiring of Li₄Ti₅O₁₂ and thus enhance its high rate performance, a novel and simple citric acid sol-gel method for in situ carbon coating is employed in this study. The effects of the amount of the carbon source in the starting xerogel on the particle size, the resistance and the electrochemical performance of the synthesized Li₄Ti₅O₁₂ samples are systematically studied. The physical and electrochemical properties of the obtained samples have been characterized by XRD, TG-DSC, SEM, TEM, BET, A.C. impedance, galvanostatically charge-discharge and cyclic voltammetry tests. The results show that the initial amount of the carbon source in the starting xerogel is a critical factor which determines the content of the coated carbon and the pore volume, therefore governs the high rate performance of the Li₄Ti₅O₁₂/C composites. The Li₄Ti₅O₁₂/C composite with in situ carbon coating of 3.5 wt% exhibits the best electrochemical performance which delivers delithiation capacities of 143.6 and 133.5 mAh g⁻¹ with fairly stable cycling performance even after 50 cycles at 0.5C and 1C rate, respectively.     

Preparation of CuIn1−xGaxS2 (x = 0.5) flowers consisting of nanoflakes via a solvothermal method

CuIn_1−xGa_xS₂ (x = 0.5) flowers consisting of nanoflakes were successfully prepared by a biomolecule-assisted solvothermal route at 220 °C for 10 h, employing copper chloride, gallium chloride, indium chloride and l-cysteine as precursors. The biomolecule l-cysteine acting as sulfur source was found to play a very important role in the formation of the final product. The diameter of the CuIn_0.5Ga_0.5S₂ flowers was 1-2 μm, and the thickness of the flakes was about 15 nm. The obtained products were characterized by X-ray diffraction (XRD), energy dispersion spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction spectroscopy (SAED), and UV-vis absorption spectroscopy. The influences of the reaction temperature, reaction time, sulfur source and the molar ratio of Cu-to-l-cysteine (reactants) on the formation of the target compound were investigated. The formation mechanism of the CuIn_0.5Ga_0.5S₂ flowers consisting of flakes was discussed.     

First-principles calculations of electronic and optical properties of Ti-doped monoclinic HfO2

Based on the first-principles density-functional theory, the electronic structures and optical properties of monoclinic HfO₂ and Ti-doped m-HfO₂ are comparatively investigated. The calculated lattice parameters of m-HfO₂ are in good agreement with the experimental values and the previous works, and the incorporation of Ti into HfO₂ induces a decrease in the lattice parameters. Electronic structures of m-HfO₂ and Ti-doped HfO₂ are studied through the densities of states (DOS) and band structures. The results indicate that the Ti substitution of Hf sites modifies the conduction band structure of HfO₂, which leads to a reduction of the band gap of HfO₂. The complex dielectric function and refractive index are calculated and the peak position distributions of imaginary parts of the complex dielectric function have been explained. The calculated optical properties are consistent with the experimental measurements for m-HfO₂.     

Effect of Nb doping on the phase transition and optical properties of sol-gel TiO2 thin films

Various content Nb-doped TiO₂ thin films were prepared by sol-gel process. XRD analysis shows that the existence of crystalline TiO₂ in anatase and rutile form depends on the Nb content in the examined samples. It is observed that Nb promotes the anatase to rutile phase transition but has a depression effect on the anatase grain growth. It is found that incorporation of about 4 at.% of Nb completely transforms anatase TiO₂ to the rutile form at a calcination temperature as high as 900 °C. The mechanism is proposed. Optical analyses show that the films have an average of 60% transmission in visible region. The energy gap values using Tauc's formula have also been estimated. The band gap of rutile Ti_1−xNb_xO₂ solid solutions increases with increasing x.     

First-principles study on the electronic and optical properties of F- and Nb-doped anatase TiO2

We present a comparative study on the electronic and optical properties of Nb- and F- doped anatase TiO₂ by first-principles calculations based on the density functional theory (DFT). Although both TiO₂:Nb and TiO₂:F have a similar band structure, the effective mass of TiO₂:F is larger than that of TiO₂:Nb, and the carriers density in the former is lower than that in the latter, indicating that TiO₂:Nb has better electronic conductivity than TiO₂:F. The interaction between photons and electrons in TiO₂:F is much stronger than that in TiO₂:Nb, resulting in increased photon absorption and reduced transmittance, especially in the visible and near-infrared regions. The results demonstrate that TiO₂:F is not suitable for transparent conductive oxide applications.     

Enhanced optical modulation due to SPR in gold nanoparticles embedded WO3 thin films

Surface plasmon resonance (SPR) phenomenon of metal-dielectric composite thin films formed by embedding the noble metal nanoparticles in a dielectric matrix offers a high degree of flexibility and enables many applications such as surface enhanced spectroscopes, numerous biological and chemical sensing fields. A remarkable enhancement in optical modulation after embedding the gold nanoparticles in a reticulated mesh like matrix of WO₃ thin films was observed. WO₃ films were prepared onto the conducting ITO coated glass substrates by a novel pulsed spray pyrolysis technique (PSPT). A reticulated mesh like morphology of WO₃ was achieved by optimizing the deposition parameters of PSPT and the gold nanoparticles were embedded in the WO₃ matrix by a drop casting method. Enhancements in electrochromic properties of WO₃ in terms of optical modulation (ΔOD), coloration efficiency (η) and response times (t_c and t_b) were attributed to the assistance of SPR in gold nanoparticles during coloration and electric field induced quenching of SPR during bleaching.     

Effect of lanthanum doping on linear and nonlinear-optical properties of Bi3TiNbO9 thin films

Lanthanum doped Bi₃TiNbO₉ thin films (LBTN-x, La³⁺ contents x = 5%, 15%, 25% and 35 mol.%) with layered perovskite structure were fabricated on fused silica by pulsed laser deposition method. Their linear and nonlinear optical properties were studied by transmittance measurement and Z-Scan method. All films exhibit good transmittance (>55%) in visible region. For lanthanum doping content are x = 5%, 15% and 25 mol.%, the nonlinear absorption coefficient of LBTN-x thin films increases with the La³⁺ content, then it drops down at x = 35 mol.% when the content of La³⁺ in (Bi₂O₂)²⁺ layers is high enough to aggravate the orthorhombic distortion of the octahedra. We found that, 25 mol.% is the optimal La³⁺ content for LBTN-x thin films to have the largest nonlinear absorption coefficient making the LBTN-x film a promising candidate for absorbing-type optical device applications.     

Synthesis, structure and optical properties of CoAl2O4 spinel nanocrystals

CoAl₂O₄ nanocrystals were synthesized by sol-gel method using citric acid as a chelating agent at low temperature. The as-synthesized samples were characterized by thermal analysis, X-ray powder diffraction, infrared spectroscopy and transmission electron microscopy. The results show that CoAl₂O₄ spinel is the only crystalline phase with a size of 10-30 nm in the temperature range 500-1000 °C. The temperature dependence of the distribution of Al³⁺ and Co²⁺ ions in the octahedral and tetrahedral sites in nanocrystals was investigated by X-ray photoelectron spectroscopy (XPS). It is observed that the inversion parameter decreases with increasing annealing temperature. Analysis of the absorption properties indicates that Co²⁺ ions are located in the tetrahedral sites as well as in the octahedral sites in the CoAl₂O₄ nanocrystals. The origin of the green color (300-500 nm absorption band) should be due to the octahedrally coordinated Co²⁺ ions.     

Dielectric properties of low-temperature sintered Ba0.6Sr0.4TiO3 thick films prepared by reactive sintering method

Screen printed Ba_0.6Sr_0.4TiO₃ (BST6/4) thick films were fabricated by reactive sintering at a low temperature below 900 °C. The dielectric properties in radio frequency range were measured on samples of sandwich structure MIM capacitors by impedance analyzer, while that in microwave frequency range were measured on samples of thick films without top and bottom electrodes by split-post dielectric resonator method. The thick films exhibited a low permittivity, while at the same time, maintained a high tunability. The permittivity and dielectric loss at 1 MHz were 228.8 and 0.007, respectively. The corresponding values measured at 9.9 GHz were 82.24 and 0.109, respectively. The tunability was as high as 72.4% (150 kV/cm, 10 kHz). This method provides a simple and effective route to obtain thick films with great potential in applications in Low Temperature Co-fired Ceramic (LTCC) and microwave tunable devices.     

Structural and optical study of samarium doped cerium oxide thin films prepared by electron beam evaporation

Samarium doped cerium oxide films were grown on the glass substrate using e-beam deposition technique and then characterized using different techniques: X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy and UV-visible spectroscopy measurements. XRD analysis shows that all the films have cubic structure and the crystallite size decreases from 18 to 13 nm as the samarium (Sm) concentration increases. The FE-SEM images indicate that all the films have columnar growth. UV-visible measurements reflect that the films have high transparency (>80%) in the visible region. From the Raman spectra, we have observed two peaks at 466 and 565 cm⁻¹. The peak at 466 cm⁻¹ is assigned to the F_2g mode of cerium oxide (CeO₂) whereas the peak at 565 cm⁻¹ is due to the presence of the oxygen vacancies. The increase in the intensity of the peak at 565 cm⁻¹ indicates that the oxygen vacancy increases with Sm doping.     

Structural and electrical properties of Gd(Ni1/2Zr1/2)O3

The Gd(Ni_1/2Zr_1/2)O₃ (GNZ) ceramic is synthesized by the solid-state reaction technique. The X-ray diffraction pattern of the sample shows monoclinic phase at room temperature. The dielectric dispersion of the material is investigated in the temperature range from 303 K to 673 K and in the frequency range from 100 Hz to 1 MHz. The relaxation peak is observed in the frequency dependence of the loss tangent. The relaxation time at different temperatures is found to obey Arrhenius law having activation energy of 1.1 eV which indicates the hopping of ions at the lattice site and may be responsible for the dielectric relaxation of GNZ. The scaling behaviour of loss tangent suggests that the relaxation mechanism is temperature independent. The frequency dependent conductivity spectra follow the power law. In the impedance formalism, the Cole-Cole model is used to study the relaxation mechanism of GNZ.