Electrical properties of binder-free thick film BaYxBi1−xO3 NTC thermistors

The microstructure and electrical properties of BaY_xBi_1−xO₃ thick film negative temperature coefficient thermistors, fabricated by screen printing, were investigated. The sintered thick films were the single-phase solid solutions of the BaY_xBi_1−xO₃ compounds with a monoclinic structure. The added Y₂O₃ led to a significant decrease in the grain size of the thermistors. The resistivity and coefficient of temperature sensitivity for the BaY_xBi_1−xO₃ (0 ≤ x ≤ 0.15) thick film NTC thermistors decreased first with increasing x in the range of x < 0.04 and then increased with further increase in x.     

Thermoelectric properties of Cu1−xPtxFeO2 (0.0 ≤ x ≤ 0.05) delafossite-type transition oxide

The samples of Cu_1−xPt_xFeO₂ (0 ≤ x ≤ 0.05) delafossite were synthesized by solid state reaction method for studying thermoelectric properties. The properties of Seebeck coefficient, electrical conductivity and thermal conductivity were measured in the high temperature ranging from 300 to 960 K. The results of Seebeck coefficient, electrical conductivity and power factor were increased with increasing Pt substitution and temperature. The thermal conductivity was decreased from 5.8 to 3.5 W/mK with increasing the temperature from 300 to 960 K. An important results, the highest value of power factor and ZT is 2.0 × 10⁻⁴ W/mK² and 0.05, respectively, for x = 0.05 at 960 K.     

Magnetomechanical properties of epoxy-bonded Sm1−xNdxFe1.55 (0 ≤ x ≤ 0.56) pseudo-1-3 magnetostrictive particulate composites

Pseudo-1-3 magnetostrictive particulate composites consisting of light rare earth (Sm and Nd)-based magnetostrictive Sm_1−xNd_xFe_1.55 particles with the Nd content x of 0-0.56 and randomly distributed sizes of 10-180 μm embedded and aligned in a passive epoxy matrix are fabricated using the particulate volume fraction of 0.5. The quasistatic magnetomechanical properties of the composites are investigated and the results are compared with their monolithic alloys for various x. The composites exhibit similar qualitative trends in properties with the alloys for all x. The Sm_0.92Nd_0.08Fe_1.55 composite shows a large unsaturated magnetostriction λ of −530 ppm at 500 kA/m and a high piezomagnetic coefficient d₃₃ of −2.0 nm/A at 100 kA/m as a result of the magnetocrystalline anisotropy compensation between Sm³⁺ and Nd³⁺ ions in the Sm_0.92Nd_0.08Fe_1.55 alloy.     

Characterization of sol-gel synthesised lead-free (1 − x)Na0.5Bi0.5TiO3-xBaTiO3-based ceramics

The crystal structure, microstructure, dielectric and ferroelectric properties of (1 − x)Na_0.5Bi_0.5TiO₃-xBaTiO₃ ceramics with x = 0, 0.03, 0.05, 0.07 and 0.1 are investigated. A structural variation according to the system composition was investigated by X-ray diffraction (XRD) analyses. The results revealed that the synthesis temperature for pure perovskite phase powder prepared by the present sol-gel process is much lower (800 °C), and a rhombohedral-tetragonal morphotropic phase boundary (MPB) is found for x = 0.07 composition which showing the highest remanent polarization value and the smallest coercive field. The optimum dielectric and piezoelectric properties were found with the 0.93Na_0.5Bi_0.5TiO₃-0.07BaTiO₃ composition. The piezoelectric constant d₃₃ is 120 pC/N and good polarization behaviour was observed with remanent polarization (P_r) of 12.18 pC/cm², coercive field (E_c) of 2.11 kV/mm, and enhanced dielectric properties ?_r > 1500 at room temperature. The 0.93Na_0.5Bi_0.5TiO₃-0.07BaTiO₃-based ceramic is a promising lead-free piezoelectric candidate for applications in different devices.     

Studies on the power factor of (Ba,Sr)Co2+xRu4−xO11 compounds

We have prepared polycrystalline single-phase ACo_2+xRu_4−xO₁₁ (A = Sr, Ba; 0 ≤ x ≤ 0.5) using the ceramic method and we have studied their structure, electrical resistivity and Seebeck coefficient, in order to estimate their power factor (P.F.). These layered compounds show values of electrical resistivity of the order of 10⁻⁵ Ωm and their Seebeck coefficients are positive and range from 1 μV K⁻¹ (T = 100 K) to 20 μV K⁻¹ (T = 450 K). The maximum power factor at room temperature is displayed by BaCo₂Ru₄O₁₁ (P.F.: 0.20 μW K⁻² cm⁻¹), value that is comparable to that shown by compounds such as SrRuO₃ and Sr₆Co₅O₁₅.     

Infrared emissivities and microwave absorption properties of perovskite Sm0.5Sr0.5Co1−xFexO3 (0 ≤ x ≤ 0.5)

Sm_0.5Sr_0.5Co_1−xFe_xO₃ (0 ≤ x ≤ 0.5, SSCF) with perovskite-type structure has been successfully prepared by conventional solid-state reaction as a microwave and infrared multi-functional material. The effects of Fe incorporation on the structure, electrical conductivity, infrared emissivity and microwave-absorbing properties were investigated in detail. XRD results have shown that the perovskite structure of SSCF has an orthorhombic symmetry for 0 ≤ x ≤ 0.4 and a cubic symmetry for 0.5, respectively. The incorporation of Fe in SSCF could contribute to the decrease of electrical conductivity, while the infrared emissivities are increased. Moreover, microwave-absorbing properties in the frequency range of 2-18 GHz at room temperature are sensitive to Fe content. The complex permittivity, complex permeability and electromagnetic loss tangent have suddenly a step change at a certain frequency and the step-change frequency position moves slightly to lower frequencies with Fe increased. The optimal reflection loss calculated from the measured permittivity and permeability is 29.33 dB at 7.97 GHz with a thickness of 2.0 mm.     

Effect of Ca-doping on the structural and electrical properties of CuY1−xCaxO2 (0 ≤x ≤0.10) ceramics

Delafossites CuY_1−xCa_xO₂ (0 ≤x ≤0.10) ceramics have been prepared by solid state reaction using Cu₂O, Y₂O₃ and CaCO₃. Liquid phase sintering, which obviously accelerates the reaction speed of Cu₂O-Y₂O₃-CaCO₃ system and promotes the formation of CuYO₂ phase is evidenced for the Ca-doped samples. During the sintering process, CuO can react with CaO to form two intermediate compounds, CaCu₂O₃ and Ca₂CuO₃, which decompose into CaO and liquid phase during 1273-1323 K. In the dopant range of 0 ≤x ≤0.10, both electrical conductivity and density of the samples are increased by Ca-doping. The room temperature conductivity of CuY_0.94Ca_0.06O₂ is more than four orders of magnitude higher than that of CuYO₂.     

Relationships between Zr substitution for Ti and microwave dielectric properties in Mg(ZrxTi1−x)O3 ceramics

The influence of Zr substitution for Ti on the microwave dielectric properties and microstructures of the Mg(Zr_xTi_1−x)O₃(MZ_xT) (0.01 ≤ x ≤ 0.3) ceramics was investigated. The quality factors of Mg(Zr_xTi_1−x)O₃ ceramics with x = 0.01-0.05 were improved because the solid solution of a small amount of Zr⁴⁺ substitution in the B-site could increase density and grain size. An excess of Zr⁴⁺ resulted in the formation of a great deal of secondary phase that declined the microwave dielectric properties of MZ_xT ceramics. The temperature coefficient of resonant frequency (τ_f) of Mg(Zr_xTi_1−x)O₃ ceramics slightly increased with increasing Zr content, and the variation in τ_f was attributed to the formation of secondary phases.     

Resistivity, thermopower, and thermal conductivity of nickel doped compounds Cr1−xNixSb2 at low temperatures

Substitutional compounds Cr_1−xNi_xSb₂ (0 ≤ x ≤ 0.1) were synthesized, and the effect of Ni substitution on transport and thermoelectric properties of Cr_1−xNi_xSb₂ were investigated at the temperatures from 7 to 310 K. The results indicated that the magnitudes of the resistivity and thermopower of Cr_1−xNi_xSb₂ decreased greatly with increasing Ni content at low temperatures, owing to an increase in electron concentration caused by Ni substitution for Cr. Experiments also showed that the low-temperature lattice thermal conductivity of Cr_1−xNi_xSb₂ decreased substantially with increasing Ni content due to an enhancement of phonon scattering by the increased number of Ni atoms. As a result, the figure of merit, ZT, of lightly doped Cr_0.99Ni_0.01Sb₂ was improved at T > ∼230 K. Specifically, the ZT of Cr_0.99Ni_0.01Sb₂ at 310 K was approximately ∼29% larger than that of CrSb₂, indicating that thermoelectric properties of CrSb₂ can be improved by an appropriate substitution of Ni for Cr.     

Preparation of CuIn1−xGaxS2 (x = 0.5) flowers consisting of nanoflakes via a solvothermal method

CuIn_1−xGa_xS₂ (x = 0.5) flowers consisting of nanoflakes were successfully prepared by a biomolecule-assisted solvothermal route at 220 °C for 10 h, employing copper chloride, gallium chloride, indium chloride and l-cysteine as precursors. The biomolecule l-cysteine acting as sulfur source was found to play a very important role in the formation of the final product. The diameter of the CuIn_0.5Ga_0.5S₂ flowers was 1-2 μm, and the thickness of the flakes was about 15 nm. The obtained products were characterized by X-ray diffraction (XRD), energy dispersion spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction spectroscopy (SAED), and UV-vis absorption spectroscopy. The influences of the reaction temperature, reaction time, sulfur source and the molar ratio of Cu-to-l-cysteine (reactants) on the formation of the target compound were investigated. The formation mechanism of the CuIn_0.5Ga_0.5S₂ flowers consisting of flakes was discussed.     

Effect of the impurity LixNi1−xO on the electrochemical properties of 5 V cathode material LiNi0.5Mn1.5O4

The formation of impurity Li_xNi_1−xO when synthesizing spinel LiNi_0.5Mn_1.5O₄ using solid state reaction method, and its influence on the electrochemical properties of product LiNi_0.5Mn_1.5O₄ were studied. The secondary phase Li_xNi_1−xO emerges at high temperature due to oxygen deficiency for LiNi_0.5Mn_1.5O₄ and partial reduction of Mn⁴⁺ to Mn³⁺ in LiNi_0.5Mn_1.5O₄. Annealing process can diminish oxygen deficiency and inhibit impurity Li_xNi_1−xO. The impurity reduces the specific capacity of product, but it does not have obvious negative effect on cycle performance of product. The capacity of LiNi_0.5Mn_1.5O₄ that contains Li_xNi_1−xO can deliver about 120 mAh g⁻¹.     

Preparation and characterization of La1−xKxFeO3 (x = 0-1) by self-propagating high-temperature synthesis for use as soot combustion catalyst

This paper proposes La_1−xK_xFeO₃ prepared by self-propagating high-temperature synthesis (SHS) as an alternative to platinum catalysts for promoting diesel soot combustion. The catalytic property of eleven products SHSed with different substitution ratios of potassium (x = 0-1) was experimentally evaluated using a thermobalance. In the mass loss curves of the product, T₅₀ was defined as the temperature at which the weight of the reference soot decreases to half its initial weight. The BET specific surface area of SHSed La_1−xK_xFeO₃ depended on x strongly. All the products showed good oxidation catalytic activity. Despite having the smallest surface area (0.11 m²/g) among the obtained products, La_0.9K_0.1FeO₃ (x = 0.1) was found to be the best catalyst with the lowest T₅₀ (442 °C). T₅₀ of La_1−xK_xFeO₃ decreased with increasing x for x > 0.2. The products with x = 0.6 and 0.8 were the second-best catalysts in terms of their T₅₀. Moreover, average apparent activation energy of La_0.9K_0.1FeO₃ (x = 0.1) calculated by Friedman method using TG was as much as 61 kJ/mol lower than that of Pt/Al₂O₃ catalyst. In conclusion, potassium-substituted SHSed La_1−xK_xFeO₃ can be used as an alternative to Pt/Al₂O₃ for soot combustion.     

Phase evolution, crystal structure and dielectric behavior of (1 − x)Nd(Zn0.5Ti0.5)O3 + xBi(Zn0.5Ti0.5)O3 compound ceramics

The phase evolution, crystal structure and dielectric properties of (1 − x)Nd(Zn_0.5Ti_0.5)O₃ + xBi(Zn_0.5Ti_0.5)O₃ compound ceramics (0 ≤ x ≤ 1.0, abbreviated as (1 − x)NZT-xBZT hereafter) were investigated. A pure perovskite phase was formed in the composition range of 0 ≤ x ≤ 0.05. The B-site Zn²⁺/Ti⁴⁺ 1:1 long range ordering (LRO) structure was detected by both XRD and Raman spectra in x ≤ 0.05 samples. However, this LRO structure became gradually degraded with an increase in x. The dielectric behaviors of the compound ceramic at various frequencies were investigated and correlated to its chemical composition and crystal structure. A gradually compensated τ_f value was obtained in (1 − x)NZT-xBZT microwave dielectrics at x = 0.03, which was mainly due to the dilution of dielectric constant in terms of Claussius-Mossotti differential equation.     

Room temperature electroresistance in Sr2−xGdxMnTiO6 perovskites (0 ≤ x ≤ 1)

We report on the room temperature strong (∼80%) electroresistance (ER) in the double perovskite with mixed Mn valence: Sr_2−xGd_xMnTiO₆, 0 ≤ x ≤ 1. Both, continuous and pulsed current-voltage curves are almost identical which indicates that the observed electroresistance is not associated with heating. This is also supported by simultaneous temperature measurements. ER is negligible (absent) in the x = 0 compound and increases with the increase of Gd content ‘x’. The amplitude of ER has a maximum for x = 0.75, suggesting that ER is determined by both the double exchange and the Mn³⁺ concentration. At the same time, magnetic interactions change from the antiferromagnetic (x = 0) to ferromagnetic ones as x → 1, thus linking the ER with ferromagnetism.     

Synthesis, structural and microwave dielectric properties of Al2W3−xMoxO12 (x = 0-3) ceramics

Low dielectric ceramics in the Al₂W_3−xMo_xO₁₂ (x = 0-3) system have been prepared through solid state ceramic route. The phase purity of the ceramic compositions has been studied using powder X-ray diffraction (XRD) studies. The microstructure of the sintered ceramics was evaluated by Scanning Electron Microscopy (SEM). The crystal structure of the ceramic compositions as a result of Mo substitution has been studied using Laser Raman spectroscopy. The microwave dielectric properties of the ceramics were studied by Hakki and Coleman post resonator and cavity perturbation techniques. Al₂Mo_xW_3−xO₁₂ (x = 0-3) ceramics exhibited low dielectric constant and relatively high unloaded quality factor. The temperature coefficient of resonant frequency of the compositions is found to be in the range −41 to −72 ppm/°C.     

Structural, morphological and optical properties of Bi2−xSbxSe3 thin films grown by electrodeposition

Ternary single-phase Bi_2−xSb_xSe₃ alloy thin films were synthesized onto Au(1 1 1) substrates from an aqueous solution containing Bi(NO₃)₃, SbCl₃, and SeO₂ at room temperature for the first time via the electrodeposition technique. The electrodeposition of the thin films was studied using cyclic voltammetry, compositional, structural, optical measurements and surface morphology. It was found that the thin films with different stoichiometry can be obtained by controlling the electrolyte composition. The as-deposited films were crystallized in the preferential orientation along the (0 1 5) plane. The SEM investigations show that the film growth proceeds via nucleation, growth of film layer and formation of spherical particles on the film layer. The particle size and shape of Bi_2−xSb_xSe₃ films could be changed by tuning the electrolyte composition. The optical absorption spectra suggest that the band gap of this alloy varied from 0.24 to 0.38 eV with increasing Sb content from x = 0 to x = 0.2.     

Effect of the sintering temperature on the properties of nanocrystalline Ca1−xSmxMnO3 (0 ≤ x ≤ 0.4) powders

Nanocrystalline Ca_1−xSm_xMnO₃ (0 ≤ x ≤ 0.4) manganites were prepared by a soft chemical method (Pechini method) followed by auto-combustion and sintering in air at 1073 or 1473 K. Single-phase powders with general composition Ca_1−xSm_xMnO₃ were obtained after 18 h annealing. The particle and grain sizes of the substituted Sm-manganites did not exhibit variation with samarium content, but increase with increasing the sintering temperature. All manganites show two active IR vibrational modes near 400 and 600 cm⁻¹ characteristic of the BO₆ octahedron vibrations.For the samples sintered at T_s = 1473 K, the partial substitution of calcium by samarium in the CaMnO₃ phase induces a marked decrease in the electrical resistivity, in the temperature range of 300-900 K, and at the same time a metal-to-insulator transition occurs; for T_s = 1073 K all the samples present semiconductor behaviour. With the increase of the annealing temperature the grain size increases and a metal-semiconductor transition appears. The results can be ascribed to the Mn⁴⁺/Mn³⁺ ratio and particle grain size. The effects of particle size on the electrical properties can be attributed to the domain status, changes in the Mn-O-Mn bond angle and Mn-O bond length.     

Part II. Large scale applications of NixMn0.8−xMg0.2Fe2O4; 0.1 ≤ x ≤ 0.35 using laser irradiation

Ni_xMn_0.8−xMg_0.2Fe₂O₄; 0.1 ≤ x ≤ 0.35 was prepared by standard ceramic technique at sintering temperature 1200 °C using heating / cooling rate 4 °C/min. The samples were irradiated by Nd YAG pulsed laser with energy of the pulse 250 mJ. X-ray diffractograms reveal cubic spinel structure for all the samples before and after laser irradiation. After laser irradiation, better crystallinity was obtained in a form of an increase in the calculated crystal size. This increase was discussed as due to the change in the valence of some ions like Fe³⁺, Ni²⁺ and Mn²⁺. The conductivity of all the investigated samples decreases after laser irradiation and becomes temperature independent for a wider range than that before irradiation. This was ascribed to electron rearrangement after laser irradiation. Accordingly, these ferrites are recommended to be useful in electronic devices.     

Growth and characterization of chemical bath deposited Cd1−xZnxS thin films

Cd_1−xZn_xS (0 ≤ x ≤ 1) thin films have been deposited by chemical bath deposition method on glass substrates from aqueous solution containing cadmium acetate, zinc acetate and thiourea at 80 ± 5 °C and after annealed at 350 °C. The structural, morphological, compositional and optical properties of the deposited Cd_1−xZn_xS thin films have been studied by X-ray diffractometer, scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), photoluminescence (PL) and UV-vis spectrophotometer, respectively. X-ray diffraction analysis shows that for x < 0.8, the crystal structure of Cd_1−xZn_xS thin films was hexagonal structure. For x > 0.6, however, the Cd_1−xZn_xS films were grown with cubic structure. Annealing the samples at 350 °C in air for 45 min resulted in increase in intensity as well as a shift towards lower scattering angles. The parameters such as crystallite size, strain, dislocation density and texture coefficient are calculated from X-ray diffraction studies. SEM studies reveal the formation of Cd_1−xZn_xS films with uniformly distributed grains over the entire surface of the substrate. The EDX analysis shows the content of atomic percentage. Optical method was used to determine the band gap of the films. The photoluminescence spectra of films have been studied and the results are discussed.     

Ba(Ti1 − xSnx)O3 (x = 0.13) nanomaterials produced by low-temperature aqueous synthesis

BaTi_0.87Sn_0.13O₃ (BTS₁₃) nanopowder was prepared by low-temperature aqueous synthesis (LTAS) method. The evolution of the structure and microstructure of the precursor precipitate, heated at temperatures up to 1000 °C was studied by TGA, FT-IR, SEM and XRD techniques. The dried precipitate showed a microstructure consisting of nano-sized grains (∼40 nm) with great tendency to agglomeration. BaTi_0.87Sn_0.13O₃ single phase was obtained at 800 °C. The ceramics prepared from as-obtained BTS₁₃ powders (60-70 nm) show good dielectric and ferroelectric characteristics. The dielectric constant was about 4800 and the dielectric loss (tan δ) was 0.229 at 1 kHz and at the Curie temperature (31 °C). The remanent polarization (P_r) and the coercive field (E_C) of Ba_0.97Ho_0.03TiO₃ ceramics, at 1 kHz, were P_r = 13 μC/cm² and E_C = 0.89 kV/cm. The ferroelectric parameters E_C and P_r decrease with increasing frequency in the domain 100 Hz to 10 kHz.