一种适用无源RFID的集成加速度传感器设计

针对射频识别（ RFID）与无线传感器网络（ WSNs）融合研究的需要,基于0.35μm CMOS工艺设计了一种集成加速度传感器。传感器单元采用从单晶硅衬底的背面进行深反应离子刻蚀工艺,背面刻蚀完成后再正面对金属和介质复合层进行各向异性刻蚀。集成电容式传感器接口电路基于锁相环原理,将传感器信号转移到频率域处理,避免了高功耗的A/D转换器的使用,直接完成电容/数字转换。后期测试结果显示：所设计的集成加速度传感器线性度好,稳定性高,功耗低,适合无源RFID及其它超低功耗应用设计。     

高集成度超声相控发射电路的设计

以往超声相控发射电路采用分立元件,集成度低,由多块发射电路板组成,存在由于板间不同步造成的误差,影响发射精度.本文提出了一种高集成度高精度发射电路的设计.该设计利用FPGA内部锁相环的倍频和移相的技术取代了延时线,并采用多个4通道的高压脉冲产生芯片和8通道高压模拟开关芯片,集成于一块电路板上,大大提高了电路的集成度,避免了板间不同步的问题.同时对该电路实现电子扫查进行了相控分析,并通过仿真和实验,证明了电路的可行性.     

集成电路综合自动测试系统软硬件接口设计

为满足日益增长的集成电路测试需求,研制了集成电路综合自动测试系统。该系统对外包含软件平台接口和硬件平台接口。软件平台接口主要针对在被测集成电路规模越来越庞大的背景下,测试程序开发成本高、但软件测试平台之间不能互相兼容的问题,设计了一种基于自动测试模型的集成电路测试程序开发方法,并采用典型集成电路进行了测试验证,可满足测试程序开发的需要。硬件平台接口主要满足高速信号等的传递需求,设计了基于弹性对接技术的硬件平台接口,并进行了结构尺寸、信号传递特性等指标的测试,测试数据表明,可实现测试接口板与测试头之间的稳定连接,满足最高1.6Gbps、最大2048通道数字信号等的传递需求。     

Low-temperature wafer-level transfer bonding

In this paper, we present a new wafer-level transfer bonding technology. The technology can be used to transfer devices or films from one substrate wafer (sacrificial device wafer) to another substrate wafer (target wafer). The transfer bonding technology includes only low-temperature processes; thus, it is compatible with integrated circuits. The process flow consists of low-temperature adhesive bonding followed by sacrificially thinning of the device wafer. The transferred devices/films can be electrically interconnected to the target wafer (e.g., a CMOS wafer) if required. We present three example devices for which we have used the transfer bonding technology. The examples include two polycrystalline silicon structures and a test device for temperature coefficient of resistance measurements of thin-film materials. One of the main advantages of the new transfer bonding technology is that transducers and integrated circuits can be independently processed and optimized on different wafers before integrating the transducers on the integrated circuit wafer. Thus, the transducers can be made of, e.g., monocrystalline silicon or other high-temperature annealed, high-performance materials. Wafer-level transfer bonding can be a competitive alternative to flip-chip bonding, especially for thin-film devices with small feature sizes and when small electrical interconnections (<3×3 μm²) between the devices and the target wafer are required     

基于CS5484的电力参数测量装置设计

分析了电能测量芯片CS5484的电路结构和工作原理,并设计开发了一种基于CS5484的电力参数测量装置,重点分析了电压通道和电流通道的电路组成。系统采用集成以太网控制器的微处理器STM32F107为控制芯片,可以满足复杂的控制输出和联网测量的需求。采用标准交流信号源对装置进行了测试,结果表明该装置对电压测量误差均在0.2%以下,无功功率的测量误差均在0.4%以下,可以较好满足电力参数的测量要求。     

激光雷达集成电路存储单元上电复位状态机设计

为了提高激光雷达集成电路存储单元上电复位的稳定性,提出基于集成DSP的激光雷达集成电路存储单元上电复位状态机设计方法。构建激光雷达集成电路存储单元复位状态机的总体结构模型,采用内核电源电路进行单极点高通滤波控制,通过由DSP集成信息模块等组成的上电复位机控制的方法,进行激光雷达集成电路存储单元的程序加载和基线恢复控制,通过基线恢复器实现激光雷达集成电路存储单元的掉电复位和连通性测试,实现激光雷达集成电路的逻辑时序控制和上电状态机设计,实现激光雷达集成电路存储单元的硬件优化设计。仿真结果表明,设计的激光雷达集成电路存储单元上电复位状态机稳定性较好,集成控制性能较强,提高了激光雷达集成信号采集能力。     

城市埋地燃气管网风险模糊综合评价——系统设计及应用研究

实施燃气管网风险评价对城市公共安全与防灾减灾具有重大的意义。在建立模糊综合评价模型后,要实现计算机程序化,才能够高效地应用到工程领域中,介绍了模糊综合评价模型的程序化,并且结合计算机辅助设计技术,提出了基于WebGIS的燃气管网风险模糊综合评价系统的总体设计思路和方法,分析了系统的设计特点和技术特色。结合工程应用实例,展示系统设计开发的可行性和实际应用效果,它可成为燃气管网安全管理的一套可视化管理工具,可有效地提供辅助决策支持。     

集成化触觉阵列传感器的研制

介绍了一种集成化单晶硅触觉阵列传感器。该传感器共有 10 0个触觉单元 ,芯片尺寸为 2 5mm×2 5mm ,厚度小于 10mm。在制造工艺上 ,把CMOS工艺和半导体平面工艺融为一体 ,利用MEMS技术在每个触觉单元上制造了触觉受力点 ,易于感受所触物体 ,其测试、记录过程由计算机完成。该种传感器具有一定的开发价值和应用前景。     

基于CMOS反相器的VGA信号多路分配电路设计

针对VGA分配器因电路复杂、基色信号放大不平衡、信号波反射等引起的图像偏色、拖尾、重影等缺陷,在分析了CMOS反相器的电压传输特性曲线的基础上,设计了一种VGA信号多路分配电路。该电路采用CMOS反相器作为模拟小信号放大电路,由74HCU04AP集成电路构成R、G、B三基色放大电路通道,由射极跟随电路驱动信号输出,能提供4路以上独立的75Ω负载输出,实现一路VGA信号输入、多路VGA信号输出的功能。实际应用表明,该电路结构简单、成本低廉、可靠性高。     

二线制带隔离膜片的扩散硅液位变送器

由于液位与液体静压力有关 ,因此可以通过静压力测量得到液位的大小。二线制隔离膜片扩散硅液位变送器是利用单晶硅的压阻效应 ,通过电阻的变化 ,得到静压力的大小 ,再通过惠斯登电桥及功能模块电路将静压力转换成电流信号输出 ,从而建立起输出信号与液位的线性对应关系 ,实现对液体深度的测量。还介绍了该种变送器的基本结构、密封方法和一般应用     

Electrolytic-Bubble-Based Flow Sensor for Microfluidic Systems

Accurate measurement and control of flow properties are essential for microfluidic lab-chips. In this paper, we demonstrate an electrolytic-bubble-based approach to directly measure flow rate in microfluidic arteries. By simultaneously generating two gas bubbles electrochemically along a channel, we can measure the pressure difference (and thus flow rate) in real time. A prototype chip that measures flow rate was fabricated on silicon. The sensor was characterized for a functional microfluidic system with inlet pressure ranging from 108 to 135 kPa. The flow-meter performance was compared with computational fluid dynamics simulations and was also calibrated against other direct experiments. The impedance-based flow-rate measurements are easily achieved on a chip with a simple electronic circuit. The described approach can be integrated into any fluid circuit, particularly microfluidic channels that are too small to use off-shelf flow meters.     

一种低成本的单片机数据采集系统

为实现工业过程控制中对多路模拟信号的采集,本文采用8031单片机为主机,在存贮器扩展的基础上,外接MN7150集成多路数据采集芯片,设计了具有16通道模拟信号检测系统的硬件和软件。该系统各通道可测电压范围为0至10V,具有12位AD转换精度;系统软件采用复合滤波算法对采样值进行处理,可在1s周期内完成对16个通道的一次巡回检测。系统满足一般工业过程控制的要求,具有低成本、高精度、高可靠性的特点。     

一种低成本的单片机数据采集系统

为实现工业过程控制中对多路模拟信号的采集,本文采用8031单片机为主机,在存贮器扩展的基础上,外接MN7150集成多路数据采集芯片,设计了具有16通道模拟信号检测系统的硬件和软件。该系统各通道可测电压范围为0至10V,具有12位AD转换精度;系统软件采用复合滤波算法对采样值进行处理,可在1s周期内完成对16个通道的一次巡回检测。系统满足一般工业过程控制的要求,具有低成本、高精度、高可靠性的特点,     

Improved process flow for buried channel fabrication in silicon

The fabrication of microchannels using MEMS technology always attracted the attention of researchers and designers of microfluidic systems. Our group focused on realizing buried fluidic channels in silicon substrates involving deep reactive ion etching. To meet the demands of today’s complex microsystems, our aim was to create passive microfluidics in the bulk Si substrate well below the surface, while retaining planarity of the wafer. Therefore additional lithographic steps for e.g. integrating circuit elements are still possible on the chip surface. In this paper, a more economic process flow is applied which also contains a selective edge-masking method in order to eliminate under-etching phenomenon at the top of the trenches to be filled. The effect of Al protection on the subsequent etch steps is also discussed. Applying the proposed protection method, our group successfully fabricated sealed microchannels with excellent surface planarity above the filled trenches. Due to the concept, the integration of the technology in hollow silicon microprobes fabrication is now available.     

我国集成电路产业发展影响因素及发展模式探索

集成电路产业有其独特的发展规律和特点,影响其发展的因素是多方面、复杂的。认识与分析集成电路产业发展的影响因素,探索适合我国国情的产业分工,不仅是新的理论研究课题,而且是发展集成电路产业的实际需要。本文力求从多个方面、多个角度,通过系统分析和数据验证,研究集成电路产业的影响因素,对现阶段我国集成电路产业发展模式进行探讨。     

Architecture of a Terabit Free-Space Intelligent Optical Backplane

Optical technologies can support thousands of high bandwidth optical channels to/from a single CMOS integrated circuit, and can thus allow for the construction of novel bandwidth-intensive computing architectures which are no longer constrained by conventional electronic wiring limitations. In this paper, the architecture of a dynamically reconfigurableIntelligent Optical Backplaneis described. The backplane consists of a large number of parallel optical channels (typically 1000–10,000 bits) spaced a few hundred micrometers apart. The optical channels are arranged into upstream and downstream rings, where the channel access protocols are implemented by “smart pixel arrays.” The architecture exploits thebandwith advantageof the optical domain and can be dynamically reconfigured to embed conventional interconnection networks, including multiple busses, rings, and meshes. Unlike all-optical and passive optical systems, the proposed backplane is intelligent and can support communication primitives used in shared memory multiprocessing, including broadcasting, multicasting, acknowledgment, flow and error-control, buffering, shared memory caching, and synchronization. The backplane is also manufacturable using existing optoelectronic technologies. A second generation backplane supporting a distributed shared memory multi-processor is under development.     

埋地非金属管道定位仪的设计

设计了一种基于音频定位法的埋地非金属管道定位仪,该定位仪以STM32F103C8T6微控制器为核心,由发射机和接收机组成;首先介绍了系统的工作原理,然后对发射机和接收机的硬件电路组成和控制软件设计作了详细的介绍;测试结果表明该定位仪定位比较准确,抗干扰能力强,平均检出率达到80％以上,水平精度最高达到0.2m,检测有效埋深1.8m,有效长度达1 000 m.能够满足城市建设施工开挖、自来水管测漏等对埋地非金属管道定位的需求,为管理和维护城市埋地管网带来了方便.     

单块用户接口集成电路其高压功能的实现

本文对介质绝缘和结式绝缘两种双极工艺进行了比较分析,讨论了用介质绝缘双极工艺来实现程控数字交换机单块用户接口集成电路高压功能的优越性。指出介质绝缘双极工艺是实现既经济又优良的电信通信用集成电路的主要工艺。     

一种用于微型六维力传感器的集成式应变计设计

为实现六维力传感器的微型化与集成化,提出了一种新型的集成式应变计．该应变计由6组敏感栅组成,可与薄壁圆筒型弹性体组成微型六维力传感器．文中介绍了信号调理电路和数字化电路的组成．采用微型数字信号处理器和刚柔结合的电路板实现了传感器的电路集成．对传感器进行了静动态标定并分析了实验结果．     

Semitransparent monocrystalline solar cells manufactured by laser cutting and anisotropic etching

This paper presents two possible technologies used to manufacture semitransparent monocrystalline building integrated solar cells: laser cutting and anisotropic etching. Nd:YAG 1,064 nm laser cut sidewalls are rough and contain molten residues, resulting in shunts across the through-holes confirmed by I–V characteristic measurement and reverse bias measurement results. Tetramethylammonium hydroxide etched edges are uniform with smooth sidewalls. Carrier lifetime and Kelvin probe measurements reveal the flaws occurring in the two technologies.