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1.
接触电阻产生损耗是电容器损耗的一部分,本文就从接触电阻产生损耗入手,探讨接触电阻对金属化薄膜电容器tgδ值的影响及采用的控制办法。分析电容器损耗的简化等效电路如图1所示,图中r_m是电容器金属部分的电阻,包  相似文献   

2.
钱立文  谢平 《电子器件》2003,26(4):371-374
金属化薄膜电容器在高频、高电压、高脉冲、大电流场合下使用,易发生损耗变化。通过对RDBWA—522灌注机焊接头定位,焊接头机械压力及焊接功率的调整试验,找到了金属化薄膜电容器损耗变化的主要原因是金属损耗变化,并对焊接状态对金属化薄膜电容器金属损耗的影响进行了详细分析。  相似文献   

3.
<正> 该仪器是国营715厂第二研究所于1991年3月投入批量生产的实用新型仪器。 该仪器采用80年代末期国际上最新技术,成功地运用了电荷注入式电容量测量法,能有效地消除箔式金属化薄膜电容器在卷绕过程中串联接触电阻及损耗tgδ对电容  相似文献   

4.
高频低阻抗片式固体电解电容器的进展   总被引:6,自引:3,他引:3  
为降低片式固体电解电容器的等效串联电阻从而改善电容器阻抗-频率特性,国外采用了导电功能高分子材料聚吡咯作电解质,代替原用的MnO2、有机半导体TCNQ取得显著效果,国内已开展了导电聚吡咯的应用研究。  相似文献   

5.
降低节能灯用金属化薄膜电容器tgδ的途径   总被引:1,自引:1,他引:0  
根据节能灯对金属化薄膜电容器的耐温及耐电冲击等要求,采取控制芯子的错边、喷金层与金属层的粘结、喷金层完整度、喷金层与引线之间的接触等措施,实现了对金属化薄膜电容器关键参数的控制——损耗角正切tg的控制。  相似文献   

6.
CAD技术在有机薄膜电容器中的应用   总被引:2,自引:1,他引:1  
建立了有机薄膜电容器结构设计和热计算的数学模型。编制的金属化有机薄膜电容器的CAD软件,对CBB61型聚丙烯薄膜电容器的结构设计和热计算应用表明是实用的。对其他有机材料及结构的电容器的应用正探索中。  相似文献   

7.
金属化薄膜电容器自愈性分析   总被引:1,自引:0,他引:1  
使用金属化薄膜通过卷绕、热压、喷金、真空浸漆、分选等工序生产的电容器就是金属化薄膜电容器。根据其生产材料不同又分为金属化聚酯薄膜电容器和金属化聚丙烯薄膜电容器。该文介绍了金属化薄膜电容器的结构、生产流程、性能指标,并对金属化薄膜电容器的自愈性进行了分析,论述了影响金属化薄膜电容器自愈性的内部因素和外部因素,根据生产现状提出了工艺改进措施。  相似文献   

8.
聚吡咯固体电解电容器   总被引:9,自引:7,他引:2  
分析了聚吡咯(PPY)固体电解电容器的性能特点,诸如:等效串联电阻、损耗角正切、电容量和阻抗频率特性、温度特性、纹波特性以及“自愈”特性等。讨论了PPY固体电解电容器研制开发过程中应注意的工序。合理的制造工艺,可使PPY固体电解电容器接近理想电容器的性能。  相似文献   

9.
罗永久 《红外技术》1998,20(6):25-26
通过理论计算和实际测试,给出了PVInSb红外探测器的低频阻抗-频率特性曲线,结合检测阻抗/动态电阻的方法和阻抗-频率特性曲线的变化规律,分析讨论了PVInSb红外探测器的阻抗与动态电阻的异同,从而说明在涉及PVInSb红外探测器的阻抗/动态电阻时,即使在低频范围也要具体考虑频率因素的影响。  相似文献   

10.
介绍了金属化有机薄膜电容器的自愈特性,阐述了电容器自愈同工作电压和金属膜厚度的大致关系,以及提高金属化膜电容器耐压的办法。  相似文献   

11.
In circuit-combining networks, low-loss interconnecting transmission lines are pivotal in reducing excess loss. Micromachined finite ground coplanar waveguides are used in this study as low-loss interconnects showing significant improvements in line loss while maintaining 50-Ω characteristic impedance. Wilkinson power dividers, reactive tee junctions, and right-angle bends are combined with micromachined interconnects in 1:2, 1:4, and 1:8 power-dividing networks and show measured loss reduction of 0.3-1.0 dB depending on circuit type and size from 85 to 95 GHz  相似文献   

12.
In this paper, a new power divider concept, which provides high flexibility of transmission line characteristic impedance and port impedance, is proposed. This power divider is implemented on a parallel-strip line, which is a balanced transmission line. By implementing the advantages and uniqueness of the parallel-strip line, the divider outperforms the conventional divider in terms of isolation bandwidths. A swap structure of the two lines of the parallel-strip line is employed in this design, which is critical for the isolation enhancements. A lumped-circuit model of the parallel-strip swap including all parasitic effects has been analyzed. An equal power divider with center frequency of 2 GHz was designed to demonstrate the idea. The experimental results show that the equal power divider has 96.5% -10-dB impedance bandwidth with more than 25-dB isolation and less than 0.7-dB insertion loss. In order to generalize the concept with an arbitrary power ratio, we also realize unequal power dividers with the same isolation characteristics. The impedance bandwidth of the proposed power divider will increase with the dividing ratio, which is opposite to the conventional Wilkinson power divider. Unequal dividers with dividing ratios of 1 : 2 and 1 : 12 are designed and measured. Additionally, a frequency independent 180 power divider has been realized with less than 2 phase errors.  相似文献   

13.
提高金属化薄膜电容器动态性能的有效途径   总被引:5,自引:1,他引:4  
通过对金属化薄膜电容器电性能特别是损耗的机理分析 ,总结生产工艺对其性能的影响 ,提出改变热压聚合工艺参数和热压聚合方法 ,采用高压短路放电 ,高频下测 tgδ变化值 ,改善金属化薄膜电容器的动态性能  相似文献   

14.
We measured and demonstrated the great advantages of embedded film capacitors in reducing power/ground inductive impedance and the suppression of SSN at frequencies up to 3 GHz for high-performance multilayer packages and PCBs. Eight-layer test PCBs were fabricated, and their inductive power/ground network impedances were measured as a function of film thickness, via distribution, and combined use with discrete decoupling capacitors, using a two-port self-impedance measurement method. This successfully demonstrated that the power/ground inductive impedance was reduced from 270 pH to 106 pH simply by using an embedded film capacitor instead of 16 discrete decoupling capacitors.  相似文献   

15.
Power systems for modern complementary metal-oxide-semiconductor (CMOS) technology are becoming harder to design. One design methodology is to identify a target impedance to be met across a broad frequency range and specify components to meet that impedance. The impedance versus frequency profiles of the power distribution system components including the voltage regulator module, bulk decoupling capacitors and high frequency ceramic capacitors are defined and reduced to simulation program with integrated circuit emphasis (SPICE) models. A sufficient number of capacitors are placed in parallel to meet the target impedance. Ceramic capacitor equivalent series resistance (ESR) and ESL are extremely important parameters in determining how many capacitors are required. SPICE models are then analyzed in the time domain to find the response to load transients  相似文献   

16.
金属化膜脉冲电容器可靠性研究   总被引:2,自引:1,他引:1       下载免费PDF全文
赵建印  彭宝华  孙权  周经伦   《电子器件》2005,28(4):703-705,709
高储能密度金属化膜脉冲电容器是一种高可靠性、长寿命的器件,在短时间内很难得到它的失效数据,因此无法采用基于失效数据分析的传统可靠性分析方法来研究其可靠性。金属化膜脉冲电容器的失效是退化型失效,根据其失效机理,给出了电容器容值退化失效模型,依据该模型和电容器的容值退化数据,对该型电容器进行了可靠性研究,该型电容器的平均寿命为21165次充放电,其第10000次充放电时的可靠度为0.9454。在工程实践中使用该模型对该型电容器进行可靠性分析可以节约大量的试验成本。  相似文献   

17.
A frequency compensation technique for MOS audio power amplifiers is presented that allows the frequency compensation capacitors around the power transistors to be smaller than the circuit parasitics without power or stability penalty. Stability is analysed by inspecting the output impedance of the closed loop amplifier, instead of the traditional open-loop gain. By degenerating the gain of the penultimate stage, the output impedance is shaped such that the stability of the audio amplifier is guaranteed for complex loudspeaker loads. The realized amplifier features a THD of 0.005% @ (1 kHz, 10 W), an SNR of 110 dB(A), and stable operation for any passive load up to 50 nF.   相似文献   

18.
薄膜电容卷绕机是薄膜电容器生产工艺中的重要设备之一.介绍了JR-28薄膜电容卷绕机设计中所涉及的机械结构、电气控制等方面的技术,对整机的工作原理、特性、技术创新等做了详细的描述.  相似文献   

19.
This work is devoted to a mass spectrometric study of volatile component loss and in situ measurement of the resistance of metallized GaAs and GaP samples during heat treatment. Arsenic losses during heat treatment have been determined quantitatively with a quadrupole mass spectrometer. A relation was found between the arsenic loss and the specific contact resistance of the metallized sample. The associated activation energy was found to be similar to the case of thin film diffusion.  相似文献   

20.
《Microelectronics Reliability》2014,54(9-10):1823-1827
Passive components, particularly capacitors, are very used devices in power electronics applications providing key function on board. Nevertheless, capacitors breakdowns can have catastrophic consequences on the financial and human scale; a good acquaintance of their deterioration over time would contribute in the improvement of the availability of the whole system by performing a predictive maintenance on the component. This operation requires the knowledge of the capacitor ageing law and their failure mechanisms associated to the application. Capacitance loss can be mainly attributed to the self-healing process occurring in metallized film capacitors when used under high steady electrical and thermal stresses. In this paper, a capacitance ageing law is proposed based on the identification of voltage and temperature degradation kinetics from three experimental floating ageing tests performed at different voltage and temperature constraints. A total of 34 capacitors provided from different manufacturers using polyester film as dielectric have been studied and compared to validate the proposed law.  相似文献   

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