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开展了钛酸锶钡(BST)热释电薄膜材料制备工艺研究,及其在单元器件和焦平面器件中的应用研究.在删Pt/Ti/SiO2/Si衬底上,用倒筒靶射频溅射方法制备了BST热释电薄膜.通过低温缓冲层技术和调控自偏压的方法,降低了BST薄膜的生长温度,提高了BST薄膜的c轴取向度和耐压特性,解决了薄膜制备的均匀性和一致性问题,使薄膜热释电系数达到6.7×10-7Ccm-2K-1.利用微细加工的方法,制备出全集成的BST薄膜单元红外探测器,抗过载能力强,探测器达到8×107cmHz1/2W-1,可以满足"灵巧弹药"的使用要求.实验表明,制备BST热释电薄膜的工艺不会对新型的耐高温读出电路造成破坏,为研制高性能的BST薄膜型焦平面探测器奠定了基础. 相似文献
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钛酸锶钡(BaxSr1-xTiO3,简称BST)薄膜具有非线性强、漏电流小、居里温度可调等特点,因而在介质移相器、压控滤波器等方面有着广泛的应用前景。笔者对BaxSr1-xTiO3(x=0.45~0.90)系列陶瓷的晶体结构和介电性能、膜厚均匀性控制、BST薄膜的微结构(包括组成、晶体结构和电畴等)和介电非线性尺度效应、铁电薄膜介电非线性模型、薄膜型介质移相器的设计和制作等重要问题进行了研究,取得了以下研究结果:通过研究靶基中心不重合的磁控溅射系统,建立了平面磁控溅射膜厚分布的数学模型,提出了采用T=∫Ld(x,y)ds=∫0td(ξ(t),ψ(t))ξ'2(t)+ψ'2(t)dt来描述靶基中心不重合的平面磁控溅射的膜厚分布情况。在靶基距为72mm、公自转转速比为5.3的条件下,采用自行设计的射频磁控溅射设备和φ100mm靶材制备的BST薄膜膜厚均匀性偏差为2.8%。采用压电力显微镜(PFM)研究了BST薄膜中电畴的类型和尺寸。不仅证实BST薄膜中存在90°铁电畴,而且确定了BST薄膜由多畴转变为单畴结构的晶粒临界尺寸(单畴临界尺寸)为31nm左右。通过研究BST薄膜的介电非线性尺度效应,发现晶粒尺寸和膜厚对薄膜的介电非线性具有重要的作用。随着晶粒尺寸和膜厚的增加,BST薄膜的介电系数、介电系数变化率都逐渐增大。晶粒尺寸对单畴态薄膜的介电系数电压变化率和矫顽场强影响特别显著,而对多畴态薄膜的介电系数电压变化率和矫顽场强影响不明显。在上述实验研究的基础上,对铁电材料的介电非线性机理进行了研究。首先,从简单、实用的角度出发写出表征P(E)和ε(E)非线性的数学多项式,根据介电偏压特性曲线和电滞回线的特征值和连续性原理,给出边界条件和初始条件,解出表达式中的各项系数,从而建立了铁电晶体的介电非线性模型。然后,采用理想的晶粒–晶界几何模型,画出铁电陶瓷材料的等效电路,引入晶粒和晶界的大小,从而建立了铁电陶瓷的介电非线性模型。再采用理想二极管等效界面势垒,得到薄膜型平板电容器等效电路,引入膜厚和界面厚度两个尺度变量,从而建立了铁电薄膜的介电非线性模型。最后,利用文献的数据和曲线对模型进行了验证,模拟得到的曲线与实验得到的曲线变化趋势基本一致,表明该模型可以较好地解释铁电材料(包括陶瓷和薄膜)的介电非线性特性及其随晶粒大小、膜厚和界面厚度等尺度变化的规律。对薄膜型介质移相器的设计、制作和测试进行了研究。采用ADS和HFSS软件进行仿真,设计出了分布式电容负载型铁电薄膜介质移相器的电路结构和各部分的尺寸;采用改进的剥离工艺,制作出了电极线条整齐的铁电薄膜介质移相器;采用矢量网络分析仪,在频率为35GHz、控制电压为40V条件下,测得介质移相器的移相度为180°,插损为9.7dB。 相似文献
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The author presents an electromagnetic mode matching analysis of dual ridged waveguide phase shifters. The waveguide is loaded with a high dielectric material between the ridges, and the troughs are filled with ferrite toroids. The present structure offers nearly twice the bandwidth and less variation in nonreciprocity versus frequency as compared to the conventional dual toroidal phase shifter. An optimum design that maximizes nonreciprocity has been found. Effects of the dielectric constant and the trough dimensions are also presented. A differential phase shift of more than 100°/cm has been predicted for the new phase shifter 相似文献
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A new digital phase shifter design at X-band is presented. The phase shifter operates based on converting a microstrip line to a rectangular waveguide and thus achieving the phase shift by changing the wave propagation constant through the medium. As a proof of principle, a 3-b phase shifter has been designed and constructed using PIN diode switches. An average insertion loss of 1.95 dB and phase shift error of less than 4/spl deg/ at 10.6 GHz are achieved. 相似文献
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本文介绍同轴波导传输系统中螺钉移相器的设计,并给出一个设计实例。实验证明.理论设计与实测结果基本吻合。这种形式的移相器在国内尚未看到过工程上的应用。 相似文献
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The theory of a new ferrite-filled rectangular waveguide phase shifter is presented, showing that the device offers more than twice the maximum phase shift of a classical dual-slab ferrite-loaded waveguide phase shifter. The complete analytical field derivation of the new phase shifter is presented. The prototype 36-GHz phase shifter has been completely embedded in an uncharacterized experimental low-temperature cofired ferrite ceramic material, essentially becoming an integral part of a chip package. The fabricated prototype is only 3.5-cm long, 5-mm wide, and 1-mm high. Preliminary measurements of the nonoptimized prototype reveal a controllable, nonreciprocal phase shift of 52.8/spl deg/ at 36 GHz for a bias current of 500 mA, and an insertion loss of approximately 3.6 dB, including transition loss. This paper marks the first time that a ferrite waveguide phase shifter has been realized as a lightweight, compact, and rugged module that can be easily mass produced at low cost. Since it is embedded in a package, the phase shifter can be readily integrated with other active and passive system components that would ideally be contained within the same package. 相似文献
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Cameron T. Charles David J. Allstot 《Analog Integrated Circuits and Signal Processing》2007,50(3):221-229
An analysis of reflective-type phase shifters with transformed single-resonant loads for integrated CMOS phased-array implementations
is presented. Several components of the standard lumped-element coupler can be eliminated without significant performance
degradation, to allow more compact implementations. It is found that the varactor should be chosen as small as feasible to
minimize sensitivity to parasitic resistance. Larger varactors reduce sensitivity to parasitic capacitance, but this can be
compensated for in the phase shifter design. A general design procedure for reflective-type phase shifters is given. A phase
shifter operating at 2.0 GHz has been designed and implemented in a 0.18 μm CMOS process using the design procedures outlined,
and it occupies an area of 0.75 mm2 and consumes 6.8 mW of power. The measured phase shift range is 308° for a control voltage varying from 0–1.8 V, which to
our knowledge is the largest phase shift range of any CMOS reflective-type phase shifter reported to date. 相似文献
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本文介绍为实现全光纤功能型传感系统而研制的一种新颖光纤偏频装置。分析了此装置的设计理论和设计方法,在实验基础上给出了实验研究结果,并确定了某些重要设计参数。 相似文献
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利用ADS2009仿真并设计了一种KA波段模拟移相器,其工作频段为19.6~21.2 GHz,工作带宽为1.6 GHz。在设计中采用skyworks公司的SMV2019变容二极管,以砷化镓陶瓷基片作为基板,金属金作为微带线的导体材料,并在设计中采用馈电分支线耦合器电桥模式,最终设计出一款最大移相能力为105.226°的连续可调的压控模拟移相器。 相似文献
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Mottonen V.S. Piironen P. Raishanen A.V. 《Microwave and Wireless Components Letters, IEEE》2001,11(9):370-372
A new tunable waveguide backshort with low loss and reliable performance has been designed. Based on a fixed short and dielectric phase shifter, it has a simple structure which is easy to design and fabricate. These properties make it a sound alternative for millimeter- and submillimeter-wave applications. A W-band (75-110 GHz) backshort has been designed and tested showing excellent performance with a return loss of less than 0.21 dB 相似文献