1.8 GHz CMOS高效率E类功率放大器

电子产品的低功耗设计已成为研究的热点,低功耗、高效率功率放大器已成为降低系统功耗的关键所在.E类功率放大器是一种开关模式的功率放大器,理论上可以达到100%的漏极效率,具有广泛的应用前景.论述了用标准CMOS工艺实现高效率E类功率放大器所面临的诸多挑战以及一些相应的解决措施,并以0.18μm CMOS工艺设计了包含驱动级的两级结构的E类功率放大器.Spectre仿真结果表明,所设计的功率放大器在 25.5 dBm的输出功率时,具有52.8%的功率附加效率.     

高效E类功率放大器的设计

E类功率放大器是一种新型高效率放大器。是实现通信对抗领域用高效率、高功率、小型化功率放大器的重要途径。分析了其工作原理和设计计算方法，并根据计算结果设计了一款短波500W高效E类功率放大器，实际效率接近90％，而且体积小、增益高。     

高效率F类功率放大器设计

F类功率放大器是一种高效率的放大器,其理论效率可以达到100%,在无线通信领域中有着广泛的应用和广阔的发展前景。简要阐述了F类放大器的基本理论,并对其效率进行了分析。设计出了带有输入输出谐波控制的高效率F类功率放大器,仿真结果表明在工作频率1 GHz时,输出功率为38 dBm,功率附加效率为74%;输出功率和功率附加效率都优于同条件下的B类功率放大器。     

一种F类宽禁带高效功率放大器的设计

F类功率放大器是一种新型高效率放大器。可用于雷达、通信和电子对抗等领域的末级功率放大器,是现代电子设备高效率、高功率和小型化功率放大器的重要途径。分析了其工作原理和设计方法,并设计了一款S波段高效F类功率放大器,输出功率大于10 W,实际效率达到75%,增益大约12 dB,实测结果验证了仿真设计的有效性。     

一种高频E类功率放大器设计方法

E类功率放大器(PA)具有设计简单和高效率的优点,然而频率较高时功率管的寄生输出电容大于E类功率放大器所需的电容,这个寄生输出电容导致E类功率放大器的效率降低.提出一种高频E类功率放大器的设计方法,使用负载牵引得到考虑寄生输出电容后的最佳负载阻抗,再结合谐波阻抗控制方法设计E类功率放大器.采用飞思卡尔的横向扩散金属氧化物半导体(LDMOS)功率管MRF21010设计了一款工作在930～960 MHz的E类功率放大器.测试数据表明,该功率放大器的输出功率为36.8 dBm (4.79W),具有79.4％的功率附加效率.     

LDMOS管并联电容提取及E类功率放大器设计

研制了2.14GHz频段横向扩散金属氧化物半导体(LDMOS)晶体管的高效率E类功率放大器。采用并联谐振法结合ADS软件仿真提取出管子的关键参数Cds,并在此基础上进行电路仿真,设计了馈电网络和负载匹配网络,有效抑制谐波分量。给出了功率放大器的实验结果,输出功率达到38.55dBm时,附加效率达到64.1%,与仿真结果吻合良好。     

一种S波段E类GaN HEMT功率放大器设计

并联电路E类功率放大器(PA)具有结构简单和高效的优点,因而被广泛应用。针对并联电路E类PA存在带宽较窄、效率较低的问题,对其输出匹配网络提出了一种改进方案。采用混合式π型结构作为PA的输出匹配网络,在较宽的工作带宽内完成了最佳阻抗与标准阻抗的转换,有效地抑制了二次谐波分量,提高了电路的效率。为了验证所提出理论的有效性,基于0.25 μm GaN HEMT工艺设计了一种结构简单、高效率和高功率的单片集成E类功率放大器。版图后仿真结果表明,在2.5～3.7 GHz工作频率范围内,输出功率大于40 dBm,功率附加效率为51.8%～63.1%。版图尺寸为2.4 mm×2.9 mm。     

微带线E类功率放大器的设计与实现

E类功率放大器作为开关模式放大器一种,其理想效率为100%。一种简单微带线拓扑网络的E类功率放大器被提出,这种微带线负载网络不仅满足E类功率放大器工作模式的特殊要求,而且对高次谐波有很好的抑制性,同时通过增加合适的偏置微带线可以拓宽放大器的工作带宽。采用ADS软件仿真电路,并在1GHz频率点电路实现了输出功率为4W,漏极效率为73.4%,其中漏极效率效率在63%以上的电路带宽为200MHz。     

高效率E类放大器

E类放大器是一种新型高效率功率放大器,理论效率接近100％,有很好的发展前景,本文介绍了E类放大器当前发展概况、电路结构、工作原理、技术特性;给出了理论分析、设计方法以及微波频段E类放大器出现的新问题,最后给出集中参数电路和微带电路的E类放大器实例。     

并联电容对DE类功率放大器的影响

DE类功率放大器既综合了D类和E类功率放大器的优点,继承了开关型功率放大器高效率的特征,又同时避免了D类和E类功率放大器的缺陷,使其成为了人们关注和研究的热点。随着工作频率的升高,MOSFET寄生电容在DE类功率放大器并联电容的计算中无法忽略。经过理论分析得到了MOSFET寄生电容的等效电容表达式,通过使用等效电容表达式,可以获得包含MOSFET寄生电容影响的并联电容的取值,提高了DE类功率放大器设计精度,保证了DE类功率放大器在高频时的高效率。通过SPICE模型仿真和电路实验验证了分析的有效性。     

High-Efficiency Envelope-Tracking W-CDMA Base-Station Amplifier Using GaN HFETs

A high-efficiency wideband code-division multiple-access (W-CDMA) base-station amplifier is presented using high-performance GaN heterostructure field-effect transistors to achieve high gain and efficiency with good linearity. For high efficiency, class J/E operation was employed, which can attain up to 80% efficiency over a wide range of input powers and power supply voltages. For nonconstant envelope input, the average efficiency is further increased by employing the envelope-tracking architecture using a wide-bandwidth high-efficiency envelope amplifier. The linearity of overall system is enhanced by digital pre-distortion. The measured average power-added efficiency of the amplifier is as high as 50.7% for a W-CDMA modulated signal with peak-to-average power ratio of 7.67 dB at an average output power of 37.2 W and gain of 10.0 dB. We believe that this corresponds to the best efficiency performance among reported base-station power amplifiers for W-CDMA. The measured error vector magnitude is as low as 1.74% with adjacent channel leakage ratio of -51.0 dBc at an offset frequency of 5 MHz     

C-band GaAs FET power amplifiers with 70-W output power and 50% PAE for satellite communication use

This paper describes a successfully developed high-power and high-efficiency C-band GaAs FET amplifier for satellite communication systems. To realize high efficiency in a high-power amplifier, an HFET well-designed for high-power applications is developed, and precise design for an amplifier is carried out. The HFET employed achieves reduction in a gate leakage current while maintaining a high maximum drain current. For precise design of an amplifier, large-signal FET model parameters are extracted using pulsed I-V and S-parameter measurements. Based on this model, second harmonic impedances as well as fundamental impedances are determined for obtaining high efficiency and input- and output-matching circuits which are assembled in a compact package are designed to achieve a high-efficiency internally matched amplifier. As a result, the amplifier delivers a high saturated output power of 70 W and a high power-added efficiency of 51%. These characteristics are the record power performance in C-band in terms of simultaneous achievement of high power and high efficiency. A low third order intermodulation distortion of -35 dBc is also obtained at a drain voltage of 10 V.     

基于双向牵引技术的射频功放设计与仿真

射频功率放大器是无线通信系统的核心部件,其输出功率和附加效率是设计的重点和难点,现有方法很难在功率和效率之间取得一致.为了解决这一问题,文中在综合考虑谐波分量以及负载阻抗、源阻抗对输出功率和附加效率影响的基础上,采用新型多谐波双向阻抗牵引技术,结合实例设计了一种高效率的射频功率放大器.在ADS中进行仿真,仿真结果表明功放在获得最佳附加效率的同时又有较高输出功率,证明了该方法的有效性.     

High-Efficiency Power Amplifier Using Novel Dynamic Bias Switching

A novel bias-switching scheme for a high-efficiency power amplifier is proposed. Two voltage levels for the drain bias of the RF power amplifier are generated using a combination of a class E dc/ac inverter and a class E rectifier with offset voltage. When signal peaks occur, the output of the class E dc/ac inverter is rectified and the rectified dc is added to the offset voltage by the class E rectifier, which boosts the drain bias of the RF power amplifier. Except during peaks, the drain bias of the RF power amplifier is connected to the offset voltage directly. Since the efficiency when there are no peaks is very high due to the direct connection between the offset voltage and drain bias, the overall efficiency of the RF power amplifier can be improved dramatically in high peak-to-average power ratio (PAPR) systems. The measured results show that the drain bias of the RF power amplifier is boosted up to approximately 1.8 times the offset voltage when the RF peaks generate. The overall efficiency of the proposed bias-switching amplifier is improved by 62% compared to that of the fixed bias amplifier in high PAPR systems     

基于谐波调谐的双频高效功率放大器设计

为了满足无线通信系统对低功耗双频功放的需求,分析高效功放的阻抗条件,提出了一种新型双频输出匹配电路,包括谐波控制电路和基波匹配电路两部分.首先,通过调谐晶体管的谐波阻抗减小漏极电压和漏极电流波形的重叠,从而提高功放的效率;其次,通过公式推导得出双频阻抗匹配电路参数,将晶体管在两个频率下的最佳基波阻抗匹配至50Ω.为验证...     

An X-band high-efficiency MMIC power amplifier with 20-dBreturn losses

Describes the design principles and measured performance of an X-band high-efficiency monolithic-microwave-integrated-circuit (MMIC) power amplifier and discuss pertinent factors of the ion-implantation process. Also presented is a worst-case power prediction of the chip performance and a large-signal design using small-signal simulation. This balanced amplifier is fully monolithic with input and output return losses of better than 20 dB provided by Lange couplers. These return losses make it very convenient to cascade with other components. For high-efficiency operation, the drain voltage is 6 V. Across the 40% bandwidth from 8 to 12 GHz, the amplifier produces 1.6 to 2.1 W of output power at 33 to 40% power-added efficiency. For high-power operation, the drain voltage is 8.5 V. The amplifier can produce 2.4 to 2.8 W of output power at 26 to 29% power-added efficiency across the same 40% bandwidth     

2.0 W CW, diffraction-limited tapered amplifier with diode injection

The authors have demonstrated an all-semiconductor discrete-element 1.5 mm length tapered-amplifier MOPA (master oscillator power amplifier) emitting up to 2.0 W CW in a diffraction-limited pattern. The tapered single-pass amplifier MOPA exhibits a very high differential efficiency of 72% and a total energy conversion efficiency of 39% at 2.0 W CW output power. The high efficiency of the MOPA is attributed to the tapered amplifier design, which maximises extraction efficiency with a low-power injected beam of 25 mW from a single-mode laser diode. Such an MOPA will have applications where compact, high-efficiency, diffraction-limited sources of radiation are required, such as frequency doubling and free-space communication.<>     

一种基于锥形微带线的宽带F 类功率放大器

提出了一种基于5G 频段的宽带高效率F 类功率放大器。分析表明锥形微带线可以有效解决矩形微带线对于带宽的限制问题, 同时将锥形微带线加入谐波控制网络, 可以实现在一定频率范围内将二次谐波阻抗匹配至短路点附近, 三次谐波阻抗匹配至开路点附近, 从而有效解决了F 类功率放大器带宽和效率的问题。使用锥形微带线制作的功放, 实测结果表明: 在2.7 ~3.8GHz 的频带范围内, 漏极效率达到63% ~78%, 平均输出功率达到10W以上, 大信号增益达到10dB 以上。在5G 无线通信中, 该功放可以有效地发挥其宽带高效率的特点。