开关电源差模电流辐射干扰的模拟与分析

本文采用电磁场数值模拟的方法对开关电源差模电流的辐射干扰进行了模拟,并对模拟的结果进行分析,得出了差模电流辐射的基本特性和闭合印制线回路的变化对它的影响.     

平行导线对的辐射发射估计

载有高频电流的导线对会产生电磁骚扰,干扰周围的电子设备.评估导线对的电磁发射具有重要的工程应用价值.文中提出了远离任何其它障碍物、置于自由空间的孤立导线对的一阶发射模型,用于估计平行导线对的辐射发射.依据FCC的B级EMC标准,实例预测了电流大小和类型对辐射发射的潜在影响,结果表明:与差模电流相比,共模电流能够产生显著的辐射发射.     

基于定向耦合装置的宽频带差模电流注入试验技术

本文对一种新型的宽频带差模电流注入试验技术进行了研究.以设备端口的响应电压相等作为等效依据,建立了差模电流注入与辐照响应的分析模型和强场条件下注入电压源外推模型,确定了差模电流注入与强场辐照等效应满足的条件.研究了工程上差模电流注入的实现技术,确定了辅助试验设备的功能、结构设计方案,推导了注入电压与辐照场强之间的等效对应关系,提出了基于定向耦合装置的宽频带差模电流注入试验新方法.通过对典型射频前端系统进行辐照与注入试验研究,验证了该试验方法的有效性.     

Koch岛分形天线基模和高次模研究

主要研究了Koch岛分形天线的基模和高次模。研究表明,Koch岛分形天线高次模和基模都具有良好的辐射性能,且2种模式频比可达4.6∶1。基模的电流分布在天线的中间区域;高次模的电流分布在分形不规则的边界,形成强烈谐振。对Koch岛分形天线的基模和高次模的深入研究,为设计出性能优良的大频差天线打下了基础。     

LVDS的电磁兼容性分析

介绍了LVDS（低电压差分信号）的工作原理及电路结构。根据其工作原理和电路结构,结合LVDS的信号特征和数字信号的频域分析,分析LVDS抗电磁干扰的能力和辐射发射,举例估算LVDS的电流环的差模辐射、电流环的共模辐射和开路线的共模辐射。 LVDS的电磁兼容性分析表明LVDS能够适应复杂电磁环境。     

传导EMI的测试

在传导EMI(电磁干扰)中既存在共模电流也存在差模电流,要很好的分析传导EMI系统,就很有必要对共模干扰信号和差模干扰信号分离开来单独进行测试.这样,共模和差模噪声的分离就显得很重要了.     

基于优势效应理论的双绞线简化建模

一些学者对双绞线电磁干扰进行研究,建立了精确的干扰模型,但并不适合工程应用.为此根据电磁兼容优势效应理论,推导出双绞线传导干扰主要由差模电流引起,辐射干扰主要由共模电流引起.分别利用广义二端口网络模型和电流元分析方法建立双绞线串扰和辐射的简化模型,从而有效估算双绞线串扰电压和对外辐射场的大小,最后给出滤波连接器的选择方法,为工程人员采取有效措施抑制互连设备电磁干扰提供了理论帮助.     

基于优势效应理论的双绞线简化建模

在对双绞线电磁干扰进行研究中,一些学者建立了精确的干扰模型,但并不适合工程应用.本文根据电磁兼容优势效应理论,推导出双绞线传导干扰主要由差模电流引起,辐射干扰主要由共模电流引起.分别利用广义二端口网络模型和电流元分析方法建立双绞线串扰和辐射的简化模型,从而有效估算双绞线串扰电压和对外辐射场的大小,为工程人员采取有效措施抑制互连设备电磁干扰提供了理论帮助.     

刷卡机辐射发射低成本优化方案

针对刷卡设备产生的辐射电磁干扰噪声问题,结合近场波阻抗分析及辐射机理的诊断,采用高频电容滤波技术,以减少差模噪声电流的方法抑制刷卡设备中的干扰噪声。整改后,噪声抑制效果达10dBμV／m,刷卡设备符合标准要求。     

印制线路板上共模电流的辐射干扰预测

随着印制线路板上电路工作频率的升高和工作电流的增加,印制线路板上共模电流产生的电磁辐射干扰对周围的电子设备产生的影响越来越严重。文章采用电磁场数值方法对印制线路板上的共模电流辐射效果进行模拟,并对模拟结果进行分析,得到了共模电流辐射的基本特性,并阐述此特性对印制线路板和机箱布局设计的影响。     

Turn-off failures in individual and paralleled MCT's

A turn-off failure mode in individual MOS-controlled thyristors (MCTs), initiated by a long gate voltage rise-time, is identified and analyzed. It is shown to be caused by turn-off current crowding in the MCT. In addition, a differential failure mode in paralleled devices is demonstrated in which the slower of the two MCTs fails to turn off. This is caused by the increase in anode current through the slower device and the decrease in gate voltage rise-time due to the MCTs Miller capacitance     

Finite time of carrier energy relaxation as a cause of optical-power limitation in semiconductor lasers

It is shown that the reason why the maximum attainable optical power in semiconductor lasers is limited is the finite time of carrier energy relaxation via scattering by nonequilibrium optical phonons in the quantum-well active region. The power and spectral characteristics of semiconductor lasers are studied experimentally at high excitation levels (up to 100 kA/cm²) in pulsed lasing mode (100 ns, 10 kHz). As the drive current increases, the maximum intensity of stimulated emission tends to a constant value (“saturates”), and the emitted power increases owing to extension of the spectrum to shorter wavelengths. The intensity saturation is due to limitation of the rate of stimulated recombination, caused by a finite time of the electron energy relaxation via scattering by polar optical phonons. It is found that the broadening of the stimulated emission spectrum is related to an increase in carrier concentration in the active region, which enhances the escape of electrons into the waveguide layers. As the drive current increases, the carrier concentration in the waveguide reaches its threshold value and there appears an effective channel of current leakage from the active region. The experiment shows that the appearance of a band of waveguide lasing correlates with a sharp drop in the differential quantum efficiency of a semiconductor laser.     

Temperature dependent optoelectronic properties of a non-intentionally created cleaved-coupled-cavity laser

A 1300 nm InGaAsP laser diode, degraded after the application of high voltage ESD pulses in forward direction, showed after degradation a strong longitudinal mode suppression, resulting in a single mode emission spectrum identical to the one of a cleaved-coupled-cavity laser. The room temperature threshold current after ESD induced degradation increased by about 50% and the differential quantum efficiency dropped substantially. However, even after degradation in a wide temperature range stable single mode laser operation has been achieved.     

飞机开关负载传导干扰的测量方法

开关负载在飞机交流电网的导线上产生的干扰主要是传导干扰.对使用射频电流探头和线性阻抗稳定网络测量开关负载传导干扰的方法进行了介绍,并用matlab对线性阻抗稳定网络测量方法进行了仿真.这两种方法能够容易地测出共模与差模干扰.     

Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region

Lasers based on InAs/InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited by MBE on GaAs substrates exhibited emission near 1.5 μm with a differential quantum efficiency of about 50%. The narrow-stripe lasers operate in a single transverse mode and withstand continuous current density above 20 kA cm^?2 without significant degradation. A maximum continuous-wave output power of 220 mW is obtained. Neither current nor beam filamentation was observed up to the highest pumping levels.     

调幅光注入下半导体激光器光强调制特性的实验研究

在受注入光调制的半导体激光器 (LD)光强调制实验中 ,当LD的偏置电流置于某些值时 ,观察到其输出光强不随注入光强改变的实验现象。实验还观察到输出光强的幅度随偏置电流的增加而呈周期性变化。理论分析表明这是由于激活区内载流子消耗、带间载流子吸收综合作用的结果 ,而这些效应与腔内的模式选择、注入电流产生的热效应等过程有关。     

Predicting Insertion Loss of Common-Core Powerline Filters

Knowledge of the propagation mode and the source impedance is necessary in order to predict the insertion loss of common-core powerline filters. If these quantities are standardized, the transition-band insertion loss corresponding to two test modes can be accurately calculated by use of only a programmable hand calculator, such as the Hewlett-Packard HP65 or Texas Instruments SR56. Such predictions of differential and common-mode insertion loss are of value in designing electronic equipment for conformance to world-wide specifications applying to powerline interference emission and filter leakage current.     

Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells

The emission-line width for 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells is studied. The width of the emission line for a laser with a 2-μm oxide current aperture attains it minimum (~110 MHz) at an output power of 0.8 mW. As the optical output power is further increased, anomalous broadening of the emission line is observed; this is apparently caused by an increase in the α-factor as a result of a decrease in the differential gain in the active region under conditions of increased concentration of charge carriers and of high internal optical losses in the microcavity. The α-factor is estimated using two independent methods.     

Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity

A reduction in the emission wavelength in the preferred mode of InAsSbP/InAsSb/InAsSbP heterostructure lasers by 50Å is observed when the current is raised from 1.8 to 5 times the threshold with dc and pulsed power. A comparison of the spectral and spatial distributions of the output as functions of current shows that this short-wavelength tuning is caused by a change in the distribution of the nonequilibrium charge carrier concentration over the strip width as the current is varied. This effect is modeled mathematically, taking into account the increase in the injection density and the drop in the output intensity from the middle to the sides of the waveguide. The results of the model calculation are in good agreement with experiment.