用于CMOS图像传感器内置流水线ADC的采样/保持电路

设计了用于CMOS图像传感器内置流水线ADC的采样/保持电路,该电路具有10位采样精度和50 MHz采样速率,采用开关电容电荷重分布式结构,加入图像传感器的黑光校准功能。放大器采用全差分套筒式共源共栅增益增强型结构,保证了所需的增益和带宽。电路采用0.18μmCMOS工艺实现。HSPICE仿真结果表明,电路可在5 ns内达到0.05%的精度;对于24.0218 MHz、±0.5 V摆幅的正弦输入信号,SNDR和SFDR分别达到62.47 dB和63.73 dB,满足系统要求。     

CMOS图像传感器中可编程增益放大器的设计

设计了一个低功耗宽摆幅全差分开关电容可编程增益放大器(PGA).该放大器可实现近似1 dB步进,0～15 dB增益变化范围,可用于CMOS图像传感器.提出了一种可调补偿电容的运算跨导放大器(OTA),通过补偿电容调节OTA带宽,大大降低了PGA的功耗.采用TSMC 3.3 V 0.18 μm工艺,在20 MSPS采样率下,使用Hspice仿真.结果显示,电路功耗仅为7 mW,输出摆幅为轨至轨,精度为12位.     

长线列CMOS图像传感器的性能优化设计

设计了一种基于电容反馈跨阻放大器(CTIA)的长线列CMOS图像传感器。为减小器件功耗和面积,采用基于单端四管共源共栅运算放大器。为提高信号读出速率,采用没有体效应的PMOS源跟随器,同时减小PMOS管的宽长比,有效减小了输出总线寄生电容的影响。在版图设计上,采用顶层金属走线,降低寄生电阻和电容,提高了长线列CMOS图像传感器的读出速率和输出线性范围。采用0.35μm 3.3V标准CMOS工艺对传感器进行流片,得到器件像元阵列为5×1 030,像元尺寸为20μm×20μm。测试结果表明:该传感器在积分时间为1ms、读出速率为4MHz的情况下工作稳定,其线性度达到98%,线性动态范围为76dB。     

用于加速度计接口电路的可编程增益放大器

在传统开关电容可编程放大器基础上,利用分时复用、分时输出的技术,设计了一种新型可编程增益放大器。相比传统开关电容可编程放大器,该放大器能实现连续信号输出,实现的全差分结构能有效抑制共模噪声。采用相关双取样技术,消除了失调和低频噪声。采用程序控制开关电容阵列,实现了不同的放大倍数。该放大器采用0.18 μm CMOS工艺,电源电压为3.3 V。仿真结果表明,实现了近似0.05 dB步进、0~17.5 dB的增益变化范围,可调增益达1 024种。在1 kHz频率时,输出噪声为42.68 nV·Hz-1/2。     

一种全差动增益增强型跨导运算放大器

设计了一种低电压全差动增益增强CMOS运算跨导放大器。主运放为一个P管输入的折叠式共源共栅结构,两个辅助运放被设计用来提升电路的输出阻抗和开环增益。主运放采用了一种改进的开关电容共模反馈电路,有更快的建立时间和更高的精度。电路采用中芯国际(SMIC)0.18μm混合信号CMOS工艺设计,1.8 V电压供电,仿真结果表明,运算放大器的开环直流增益为92.2 dB,单位增益带宽可达504 MHz。     

多模多频收发机中可编程增益放大器的设计

设计了一种基于运算放大器和电阻反馈网络的宽带全差分可编程增益放大器.该可编程增益放大器(PGA)采用三级级联结构,实现增益为1～57 dB可变,步长为2 dB.PGA中运放采用零点补偿法扩展带宽,整个PGA带宽达30 MHz.芯片采用IBM 0.13μm标准CMOS工艺实现,电源电压为2.5 V,功耗为62 mW.     

一种具有1～128倍可变增益放大器的低功耗Sigma-Delta ADC

为满足传感器应用的低功耗需求,设计并实现了一种低功耗Sigma-Delta模数转换器(ADC)芯片。该ADC采用一阶全差分开关电容Sigma-Delta调制器,且集成了可编程增益放大器(PGA)和Bandgap;使用1.5 bit量化结构,相较于1 bit量化结构减小了3 dB的量化误差;使用优化的反馈电路,减小了电容失配引入的误差;PGA采用轨到轨的运放电路拓扑,增大了整个芯片的电压适应范围。基于180 nm CMOS工艺对该ADC进行了设计和流片。测试结果表明：该Sigma-Delta ADC在采样频率512 kHz、过采样率(OSR)为256时,峰值信噪谐波失真比(SNDR)和有效位数(ENOB)分别为75.29 dB和12.21 bit,芯片功耗仅为0.92 mW。芯片能在2.3～5.5 V宽电源电压范围内正常工作,可实现最大128 V/V的增益。适用于小型传感器的信号测量应用,可以满足小型传感器低功耗、高精度的需求。     

一种应用于CMOS图像传感器数字双采样ADC的PGA电路

提出了一种应用于CMOS图像传感器数字双采样模数转换器(ADC)的可编程增益放大器(PGA)电路。通过增加失调采样电容,采集PGA运放和电容失配引入的失调电压,在PGA复位阶段和放大阶段进行相关双采样和放大处理,通过数字双采样ADC将两个阶段存储电压量化,并在数字域做差,降低了PGA电路引入的固定模式噪声。采用0.18μm CMOS图像传感器专用工艺进行仿真,结果表明:在输入失调电压-30~30mV变化区间,提出的PGA的输出失调电压可以降低到1mV以下,相比传统PGA输出失调电压随输入失调电压单倍线性关系而言大大降低了列固定模式噪声。     

一种25 MS/s高精度采样保持器的设计

介绍了一种高精度采样保持器。密勒电容反馈的引入,使等效保持电容大大增加,从而有效地抑制了模拟开关的电荷注入效应带来的采样误差;设计大共模输入范围的高增益带宽积的放大器,以提高信号差模输入范围和精度;采用由分频器组成的准采样电路,避免了保持输出信号的抖动对后级电路(如ADC的比较器)的影响。设计采用TSMC 0.25μm 3.3 V CMOS工艺,仿真结果表明,该采样比较器在全范围输入1.1 MHz,采样率25 MS/s时,单音主杂比高于56 dB;全范围输入110 kHz,采样率10 MS/s时则高达近80 dB。     

0.18μm CMOS可编程增益放大器

介绍了一种基于0.18μm CMOS工艺,应用于5 GHz无线局域网(WLAN)的可编程增益放大器(PGA)。该PGA采用分级可选放大器的系统结构,核心电路由交叉耦合的共源共栅放大器和电流反馈放大器组成。为消除工艺角偏差对增益精度的影响,设计中加入了增益微调的机制。后仿真结果表明:PGA电压增益可在0 dB到41 dB之间以1 dB步长变化,双端输出的电压摆幅为1 Vp-p,并具有大于10 MHz的-3 dB带宽和小于21.1 mW的静态功耗。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.