Thermoelectric Properties of TlIn1 – x Yb x Te2 (0.01 ≤ x ≤ 0.09) Crystals

The thermoelectric properties of TlIn_{1 – x} Yb _x Te₂ (0.01 x 0.09) crystals are studied. The results indicate that the crystals possess high thermoelectric figures of merit in the range 500–700 K.     

(1 − x)CaTiO3–x(Li0.5Nd0.5)TiO3 for ultra-small dielectrically loaded antennas

Microwave (MW) dielectric ceramics based on the solid solution (1 ? x)CaTiO₃–x(Li_0.5Nd_0.5)TiO₃ (0.25 ≤ x ≤ 1.0) were prepared by conventional solid-state synthesis using the mixed oxide route. Compositions closest to zero τ_f (+65 ppm/°C) were obtained at x = 0.8 where ε_r = 110 and the microwave quality factor, Qf ₀ ? 2600 GHz for samples sintered at 1300 °C. To reduce the sintering temperature and compensate for any Li₂O loss during fabrication, ≤0.5 wt% 0.5Li₂O–0.5B₂O₃ was added as a sintering aid in the form of raw oxides (LBR) and also as a pre-reacted glass (LBG). 0.5 wt% LBR was the most effective, reducing the temperature to achieve optimum density by ~50 °C with no significant deterioration of microwave properties (ε_r = 115, τ_f = +65 ppm/°C and Qf ₀ ? 2500 GHz). The high permittivity and relatively low sintering temperatures (1250 °C) are ideal for the development of low cost ultra-small dielectric loaded antenna, assuming the system can be tuned closer to zero by fractionally increasing x.     

LiNi_(0.5)Mn_(0.5-x)Co_xO_2(0≤x≤0.12)正极材料的制备及其电化学性能

将简单共沉淀与高温固相法相结合制备了LiNi_(0.5)Mn_(0.5-x)Co_xO_2(0x≤0.12)正极材料,使用XRD、SEM、EDS和XPS等手段表征其物相结构、形貌、各元素的含量和价态,根据恒电流充放电和电化学交流阻抗谱表征其电化学性能。结果表明,LiNi_(0.5)Mn_(0.5-x)Co_xO_2正极材料具有a-NaFeO_2型层状结构;成功地将Co引入到材料的晶格内部分替代了Mn;Ni和Mn的价态分别为+2和+4,Co的价态为+3,引入Co使材料出现氧缺失。引入Co可明显改善材料的倍率性能、循环稳定性和低温性能。在2.75~4.35 V和0.2C条件下x=0.12的电极材料其首次放电比容量为180.8 m Ah·g-1,100次循环后容量保持率为92.3%,-20℃的放电比容量为25℃放电比容量的66.3%。     

Synthesis and electrical properties of (BaTiO3)1 ?x (K0.5Bi0.5TiO3) x solid solutions

(BaTiO₃)_{1 ? x} (K_0.5Bi_0.5TiO₃) _x solid solutions exhibiting positive temperature coefficient of resistance behavior have been prepared using BaTiO₃ presynthesized through oxalate coprecipitation. The peak in their dielectric permittivity has been shown to shift to higher temperatures (above 120°C) with increasing x. We have examined the effect of K_0.5Bi_0.5TiO₃ content on the microstructure of the (BaTiO₃)_{1 ? x} (K_0.5Bi_0.5TiO₃) _x solid solutions. The results demonstrate that, with increasing x, both the minimum and maximum resistivities of the materials in the temperature range of their positive temperature coefficient of resistance behavior increase. The materials prepared using barium titanate presynthesized by the oxalate route have higher Curie temperatures and temperatures where they exhibit positive temperature coefficient of resistance behavior and lower minimum resistivities than do the materials prepared by solid-state reactions.     

Electrical and microstructural properties of Bi2−x Sb x Te and Bi2−x Sb x Te2 foils obtained by the ultrarapid quenching process

This paper is concerned with the feasibility and reproducibility of the ultrarapid quenching process used to fabricate Bi_2–x Sb _x Te and Bi_2–x Sb _x Te₂ alloys for thermoelectric applications. Microstructural properties of the materials, obtained in the shape of foils, were studied concerning the phase analysis, cell parameters, texture, and microstructure observations. The Bi_2–x Sb _x Te alloys were found to have the (2 0 3) texture. The (2 0 4) texture, with an additional (1 1 0) component for x values greater than 0.4, was predominant for Bi_2–x Sb _x Te₂ foils. The electrical properties of these materials were then characterized by measuring the Seebeck coefficient, Hall coefficient, and electrical resistivity. It was found that Bi_2–x Sb _x Te foils changed from n- to p-type for an x-value of about 1.2. A maximum Seebeck coefficient, ||, of 36×10^–6 V K^–1 was measured for Bi₂Te. In the case of Bi_2–x Sb _x Te₂ foils, the change from n- to p-type was observed for an x value of about 1. A maximum Seebeck coefficient, ||, of 32×10^–6 V K^–1, was measured for Bi_1.4Sb_0.6Te₂. Measurements of the temperature-dependent electrical resistivity, Hall and Seebeck coefficients of the foils were carried out and the analysis revealed a semi-metallic behavior.     

Plastic behaviour of Cd x Hg1−x Te (0⩽ x⩽1) crystals

Cd _x Hg_1–x Te (0x1) single crystals were strained by microhardness and by constant strain rate uniaxial compression tests, in the temperature range 300 to 600 K. Hardness curves as function of temperature can be described by empirical relations. Stress-strain curves, relaxation tests and dislocation observations using transmission electron microscopy show that the deformation is controlled by a thermally activated Peierls mechanism. Moreover, dislocations are dissociated with a stacking fault energy which does not depend on thex composition.     

The growth and properties of (Sbx Bi1–x)2Te3 crystals

Abstract

Vertical Bridgman systems with programmable temperature control are used to grow (Sb_xBi_1:x)₂Te₃ crystals. High purity Bi, Sb and Te are used as sources and the diameter of 1.1 cm, little soft bulk crystals of (Sb_xBi_1–x)₂ Te₃ can be obtained. Scanning electron microscope (SEM) and electron probe microanalysis (EPMA) are used to analyze the micro‐structure and the compositions of the crystal. From the X‐ray diffraction patterns it appears that the grown crystal is single crystal or directive polycrystal. If the uniformity of the source solution and grown temperature are under control, then the high quality of single crystals can be obtained. The dependence of crystal structure and the thermoelectric characteristics on the changed compositions of grown crystals are discussed. The optimum composition for the thermoelectric properties is Sb_1.00 Bi_1.04Te_2.96. When the DC current, 3A, is applied to the Sb_1.00 Bi_1.04 Te_2.96 crystal with suitable electrodes, the temperature difference (△T) between two sides of the crystal can be as high as 60°C. It is 2 times larger than that ever obtained by Sb₂Te₃ crystal. It appeared that the grown (Sb_xBi_1‐x)₂Te₃ crystals have the potential on the fabrication of thermoelectric devices and electronic cooling system.     

Crystallization kinetics of bulk amorphous (Se65Te35)100−x Sb x

Kinetic studies of crystallization in (Se₆₅Te₃₅)_100–x Sb _x with 0x10 glasses, using the differential scanning calorimetry technique, were performed. Crystallization enthalpy data, H _c, were collected as a function of composition. The crystallization data were examined in terms of recent analyses developed for non-isothermal crystallization studies, to arrive at E _c. The results indicate bulk nucleation and crystallization with two- and three-dimensional growth, respectively, for the (Se₆₅Te₃₅)₉₈Sb₂ and (Se₆₅Te₃₅)₉₂Sb₈ glass composition.     

Microstructure and piezoelectric properties of lead-free 0.95(Na0.5K0.5)NbO3–0.05(Bi0.5K0.5)Zr1−x Ti x O3 ceramics

0.95(Na_0.5K_0.5)NbO₃–0.05(Bi_0.5K_0.5)Zr_1?x Ti _x O₃ (abbreviated as KNN–BKZT _x ) ceramics were prepared by the conventional solid state method, and the effect of the Ti content on the surface morphology, crystalline structure, and electrical properties of KNN–BKZT _x ceramics were mainly investigated. With the increase of Ti content, the temperature of the orthorhombic–tetragonal (O–T) phases transitions shifted to lower temperatures, and the O–T phase boundary of KNN–BKZT _x ceramics was identified in the composition with 0 ≤ x ≤ 0.3 at room temperature. It was considered that the piezoelectric properties of the ceramics were enhanced significantly owing to the more possible polarization states resulting from the coexistence of two phases. The ceramic with x = 0.2 exhibited optimum properties: d ₃₃ = 260 pC/N, k _p = 0.38, and T _C = 323 °C.     

Structural and optical properties of Cd x Zn(1 − x)Te thin films

Seven Cd _x Zn_{(1 ? x} Te solid solutions with x = 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 and 1.0 were synthesized by fusing stoichiometric amounts of CdTe and ZnTe constituents in silica tubes. Each composition was used in the preparation of a group of thin films of different thicknesses. Structural investigation of the obtained films indicates they have a polycrystalline structure with predominant diffraction lines corresponding to (111) (220) and (311) reflecting planes, which can be attributed to the characteristics of growth with the (111) plane. The optical constants (the refractive index n, the absorption index k, and the absorption coefficient α) of Cd _x Zn_{(1 \s -x)} Te thin films were determined in the spectral range 500–2000 nm. At certain wavelengths it was found that the refractive index, n, increases with increasing molar fraction, x. It was also found that plots of α² (hv) and α^1/2 (hv) yield straight lines, corresponding to direct and indirect allowed transitions respectively obeying the following two equations: $$\begin{gathered} E_g^d = 1.583 + 0.277x + 0.197x^2 \hfill \\ E_g^{ind} = 1.281 + 0.111x + 0.302x^2 \hfill \\ \end{gathered}$$      

Glass-free LTCC microwave ceramic-Ca1−x(La0.5Na0.5)xWO4

The structure and microstructure of the Ca_1?x(La_0.5Na_0.5)_xWO₄ (0.1 ≤ x ≤ 1.0) ceramics were investigated using X-ray powder diffraction (XRD) and scanning electron microscopy (SEM) method. The microwave dielectric properties of the ceramics were studied with a network analyzer at the frequency of about 10–14 GHz. Continuous solid solutions Ca_1?x(La_0.5Na_0.5)_xWO₄ (0.1 ≤ x ≤ 1.0) with Scheelite structure (space group: I4₁/a) could be densified at 850 °C/2 h. The dielectric permittivity increased slightly with the increase in substitution amount. The Q × f value decreased with the increase of x up to x = 0.5, and then increased with further increase of x. The Q × f value increased when the sintering temperature increased from 850 to 950 °C for the x < 0.5 compositions, whereas it decreased with the increase in sintering temperature for the x > 0.5 compositions. The τ _f value changed a little with the variation of x. All samples exhibited negative τ _f values. Addition of 30 mol% TiO₂ to the x = 0.9 composition improved the τ _f to ?9.3 ppm/°C with ε_r = 14.4 and Q × f = 14,255 GHz after sintering at 850 °C/2 h. The chemical compatibility of Ca_0.1(La_0.5Na_0.5)_0.9WO₄ + 30 mol% TiO₂ composite with silver (Ag) powders was also investigated. The composite showed inert behavior with Ag when cofired at 875 °C for 2 h. However small amount of Na_0.86WO₃ impurity phase was detected in the co-fired specimen.     

球型Li_2Fe_(0.5)Mn_(0.5-x)V_xSiO_4(x=0-0.1)材料的合成及其电化学性能研究

采用一种简单的喷雾溅射法成功制备出了球型Li_2Fe_(0.5-x)Mn_0.5V_xSiO_4(x=0-0.1)。合成的产物经XRD和SEM分析手段进行表征。此外,还考察了V掺杂量对其电化学性能的影响,结果表明V掺杂量为0.05时能大幅度改善材料的电化学性能。     

镍氢电池负极材料V_2Ti_(0.5)Cr_(0.5)Ni_(1-x)Mo_x(x=0.02~0.08)的结构和电化学性能

为了改善镍氢电池负极材料的循环稳定性能,采用真空感应电弧熔炼炉制备了V_2Ti_(0.5)Cr_(0.5)Ni_(1-x)Mo_x(x=0.02~0.08)合金,分析了不同含量的Mo替代Ni之后对合金电极的组织结构及电化学性能的影响。研究结果表明,电极材料主要由BCC结构的V基固溶体主相和Ti Ni二次相组成,随着合金中Mo替代Ni含量x由0.02增加到0.08,合金电极的放电容量先增加后降低,合金电极的循环稳定性能以及电化学动力学性能先得到改善而后降低,合金电极的综合性能均在x=0.04时达到最好。     

Diffusion of mercury into for HgxCd(1−x)Te 0≤x≤0.03

Experiments carried out to fabricate Hg_xCd_(1-x)Te by diffusing mercury into CdTe slices from the vapour, resulted in obtaining slices with a maximum value of x=0.004. Measurements on the diffusion of mercury into such slices, where 0≤x≤0.03, under saturated vapour pressure conditions, resulted in two component profiles, each profile giving two values of D. These results were similar to ones obtained earlier, indicating that the diffusion was rate-limiting. In addition, the diffusivities were found to be independent of x. This revised version was published online in July 2006 with corrections to the Cover Date.     

The Effects of Doping on Crystal Structure, Magnetic and Microwave Properties of SrFe12−2x La x (Mn0.5Zr0.5) x O19 Nanoparticles

M-type hexagonal ferrite powders, SrFe_12?2x La _x (Mn_0.5Zr_0.5) _x O₁₉ (x=0.0, 0.2, 0.4, 0.6, 0.8), have been synthesized by the coprecipitation method. The X-ray diffraction, field emission scanning electron microscope, vibrating sample magnetometer and vector network analyzer all were used to characterize the structure of the samples, their magnetic and microwave properties. The value of the saturation magnetization increased up to x=0.2 and then slowly decreased with increasing doping. A decreasing trend was observed in the value of coercivity with increasing substitution degree, and its value reached a minimum of 2420 Oe for x=0.6 and then increased with further increasing x. The relative complex permittivity and permeability of the composite powders were investigated in the X-band frequency range (8.2–12.4 GHz).     

Fluctuation Induced Conductivity in Hg-Doped (Cu0.5Tl0.5?x Hg x )Ba2Ca3 Cu 4O12?δ Superconductor

The fluctuation induced conductivity (FIC) analysis on resistivity data of the Hg-doped (Cu_0.5Tl_0.5−x Hg _x )Ba₂Ca₃Cu₄O_12−δ (x=0, 0.15, 0.25, 0.35) superconductor has been carried out in the light of the Aslamazov–Larken (AL) theory. The superconducting properties have been improved with Hg-doping (up to x=0.25) at Tl sites in the Cu_0.5Tl_0.5Ba₂O_4−y charge reservoir layer. These samples are also post-annealed in oxygen to improve intergrain connectivity and to optimize the carriers’ density in CuO₂ planes. The results of FIC analysis have shown three-dimensional (3D) and two-dimensional (2D) fluctuations in the order parameters. It has been observed that there is an increase in the cross-over temperature (T _o) as well as in zero resistivity critical temperature {T _c(0)} with Hg-doping. These properties have been further improved after post-annealing in oxygen, which may be due to improved inter-grain coupling and optimization of mobile carriers in CuO₂ planes. A direct correlation between T _o, T _c(0) as well as zero temperature coherence length ξ _c(0) has been observed.     

Development of novel CoCu0.5FeNiVTix (x = 0, 0.5, 1, 1.5, 2) high-entropy alloys

CoCu_0.5FeNiVTi_x (x?=?0, 0.5, 1, 1.5, 2) high-entropy alloys (HEAs) were prepared using vacuum arc melting. The microstructures, crystal structures, hardness, compressive properties and wear resistances of the alloys were studied. The alloys always contained face-centred cubic (FCC) and body-centred cubic (BCC) solid solution regardless of the increase in Ti content. The microstructure of alloys exhibited typical dendritic characteristics, which were more and more unapparent with the increase in the Ti content. The alloys with a high content of Ti had a high compressive strength and low ductility. Owing to the formation of nano-precipitates and BCC as the major phase, the CoCu_0.5FeNiVTi₁ alloy exhibited the highest compressive strength of 2747?MPa and a plastic strain limit of 7.4%. As the content of Ti was increased, the wear resistance of CoCu_0.5FeNiVTi_x alloys displayed a rapid increase and reached the highest value when x?=?1, and finally decreased. Because of the large volume fraction of BCC, the CoCu_0.5FeNiVTi₁ alloy exhibited high hardness so exhibiting the best wear resistance. Adhesive wear and abrasive wear dominated the wear behaviour of CoCu_0.5FeNiVTi_x alloys during sliding against SUJ2 steel.     

Structure and Magnetostriction of (Dy_(0.7)Tb_(0.3))_(0.5)Pr_(0.5)Fe_x Alloys (1.10≤x≤1.85)

1. IntroductionInvestigation of rare earth-iron illtermetallic compounds is of great importance owing to their potential application as magnetostrictive transducerelemelltsll'ZI. It is possible to alloy the materials withthe same sign of magnetostriction but with the opposite sign of anisotropy in order to obtain the desiredratio of high magnetostriction to low magnetocrystalline anisotropy. The calculation of magnetostriction for rare earth-Fe Laves compounds indicates thatthe magnetostrict…     

(K_(0.5)Na_(0.5))_(0.94-2x)Li_(0.06)Sr_xNb_(0.98)Sb_(0.02)O_3无铅压电陶瓷的制备及性能研究

采用传统陶瓷烧结工艺制备了(K0.5Na0.5)0.94-2xLi0.06SrxNb0.98Sb0.02O3无铅压电陶瓷,研究了陶瓷的结构、烧结特性及电性能特征.研究结果表明:制备的KNLSN-Srx陶瓷为单一的具有四方相的钙钛矿结构,SEM照片中可以看出材料的平均晶粒尺寸随着Sr掺入量的增加逐渐变大,陶瓷的烧结温度随Sr掺入量的增加而升高,Li,Sr和Sb掺杂(K0.5Na0.5)NbO3后,材料的压电系数d33、平面机电耦合系数kp得到提高,同时介电损耗tanδ和机械品质因子Qm降低,Sr掺入量在2mol%时各项性能最佳(d33=130pC/N,kp=34.5%,tanδ=4.2%).