Role of the temperature distribution on the PN junction behaviour in the electro‐thermal simulation

Electro‐thermal simulations of a PIN‐diode based on the finite‐element method, show a non‐uniform temperature distribution inside the device during switching transients. Hence, the implicit assumption of a uniform temperature distribution when coupling an analytical electrical model and a thermal model yields inaccurate electro‐thermal behaviour of the PIN‐diode so far. The idea of including non‐uniform temperature distribution into power semiconductor device models is not new, as accurate electro‐thermal simulations are required for designing compact power electronic systems (as IC or MCM). Instead of using a one‐dimensional finite difference or element method, the bond graphs and the hydrodynamic method are utilized to build an electro‐thermal model of the PIN‐diode. The results obtained by this original technique are compared with those obtained by a commercial finite‐element simulator. The results are similar but the computation effort of the proposed technique is a fraction of that required by finite‐element simulators. Moreover, the proposed technique may be applied easily to other power semiconductor devices. Copyright © 2004 John Wiley & Sons, Ltd.     

Fast 3D thermal simulation of power module packaging

This paper presents a thermal model that uses a Fourier series solution to the heat equation to carry out transient 3D thermal simulation of power device packaging. The development and implementation of this physics‐based method is described. The method is demonstrated on a stacked 3D multichip module. The required aspects of 3D heat conduction are captured successfully by the model. Compared with previous thermal models presented in literature, it is fast, accurate and can be easily integrated with an inverter circuit simulator to model realistic converter load cycles. Copyright © 2012 John Wiley & Sons, Ltd.     

基于PSIM的光伏模块建模与电气特性仿真

光伏模块依靠光伏逆变器将产生的直流电转变为交流电用于负载供电,光伏逆变器的设计需要考虑光伏模块的电气特性。根据光伏电池物理机制的数学模型,采用PSIM软件中已有的器件搭建光伏模块仿真模型。利用该仿真模型,通过PSIM软件模拟实际光伏模块在不同太阳光照强度、环境温度下的I-V和P-V特性。通过仿真分析串联电阻Rs和并联电阻Rsh变化对模块输出特性的影响,更加深入地了解光伏模块的电气特性。模型为将来光伏逆变器设计时的动态仿真研究提供了一个准确的仿真电源。     

适用于电路仿真的IGBT模块暂态模型研究

高压IGBT与二极管构成IGBT模块已经广泛应用于柔性直流输电技术领域。然而现有仿真研究难以模拟IGBT模块中IGBT与二极管各自详细开关暂态特性及相互影响,因此提出一种适用于电路仿真的IGBT模块暂态模型及其参数通用提取方法。模型采用机理推导、电气等效、曲线拟合等方法在PSCAD、SABER等电路仿真平台实现,无需获取器件底层参数和求解复杂物理方程,不仅可以实现电路仿真中IGBT模块的各种运行状态,而且可以在纳秒级步长下模拟其电压电流尖峰、拖尾电流、米勒平台等开关暂态特性。通过与SABER中通用模型仿真结果及实验实测波形对比分析,验证了IGBT模块暂态模型和参数提取方法的正确性和通用性,为进一步将模型应用于柔性直流输电系统仿真、电磁干扰及损耗分析、控制策略等研究打下基础。     

功率模块压接型IGBT温度循环试验热负载施加方法

温度循环试验是研究功率模块压接型绝缘栅双极型晶体管（insulated gate bipolar transistor,IGBT）特性的重要试验手段。为此,以柔直换流阀功率模块压接型IGBT为研究对象,结合理论计算与有限元仿真分析,提出了温度循环试验热负载施加方法,并获得相应的电输入目标参数。搭建了温度循环试验平台,对器件温度进行实时监测,综合对比分析功率模块受试IGBT器件的结温、壳温、散热器测温点温度数据。通过仿真结果验证了所提方法的有效性,可为同类型压接IGBT试验提供研究思路。     

碳化硅MOSFET电热耦合模型及分析

为在Matlab/Simulink环境下准确预测碳化硅Si C(silicon carbide)功率器件在实际工况下的结温变化,针对Si C MOSFET器件提出了一种基于时变温度反馈的电热耦合模型建模方法。该方法能更好地反映Si C MOSFET在导通和开关过程中的性能特点,模型从器件物理分析和工作机理出发,将功率损耗和热网络模块引入建模,实时反馈器件结温和更新温度相关参数。采用CREE C2M0160120D Si C MOSFET器件进行测试,根据制造商数据手册和测试实验中提取,仿真结果证实了该建模方法的正确性,为器件的寿命预测和可靠性评估提供了研究基础。     

基于MATLAB\Simulink的快速FCS-MPC级联H桥STATCOM耗散功率计算及分析

针对一种应用于级联H桥STATCOM的快速FCS-MPC策略,基于MATLAB/Simulink建立的通用器件耗散功率计算模型,结合器件特性及工作状态参数,仿真计算耗散功率,得到各种极端工作条件下,器件稳态耗散功率值及结点温度的波动范围。通过实验平台测试,验证了此方法的有效性和准确性。定量分析了电网电压、控制时间和开关损耗权重系数等参数改变对器件耗散功率的影响,为设备产品化热设计提供了参考范围及典型值,有利于分配合理的通路热阻,评估变流器热管理的合理性和可靠性。     

IGBT模块材料选型的仿真研究

作为电力电子变换器的核心器件,IGBT功率模块的可靠性是目前学术界和工业界关注的重点。本文借助有限元分析软件,根据IGBT模块的实际结构,构建了IGBT模块的电-热-力仿真模型。针对目前IGBT模块键合线失效的难题,研究了不同键合线材料与表面金属化层材料的选型对模块温度云图及应力云图的影响。仿真结果表明键合线材料的选型与模块内部的温度分布具有较强的相关性,金属化层材料的选型与模块内部的应力分布具有较强的相关性。因此,通过合理选择模块表面金属化层与键合线材料类型能极大程度降低模块内部的温度和应力,进而降低键合线失效的风险,提高模块的可靠性。     

Simulation and Optimization of Diode and Insulated Gate Bipolar Transistor Interaction in a Chopper Cell Using MATLAB and Simulink

Recently, a simulation method for power electronic devices has emerged, which has high accuracy and short run times based on a Fourier model of the device physics. This paper describes the use of the Fourier models for diodes and insulated gate bipolar transistors (IGBTs) and implementation in MATLAB and Simulink in a formal optimization strategy. In particular, this paper investigates coupled circuit, diode, and IGBT behavior. Conclusions are drawn concerning device loading and circuit design, particularly the role of stray inductance.     

基于iSIGHT平台的开关电源电热耦合仿真方法

为了实现开关电源性能特性的精确仿真分析,需要考虑温度与元器件之间的电热耦合效应,否则将无法准确模拟电源真实工作状态。提出一种基于i SIGHT平台的开关电源电热耦合建模与仿真分析方法。采用有限元仿真方法提取高频变压器分布参数,建立等效电路模型;分析功率半导体器件工作特性受温度的影响关系,建立肖特基二极管和功率MOSFET的电热耦合仿真模型。以某开关电源为对象,分别建立电路仿真模型和稳态热场仿真模型,采用i SIGHT对电、热仿真过程进行集成,实现电热耦合仿真数据的自动化交互。该电热耦合仿真方法提高了电、热特性的仿真精度,可精确描述开关电源的性能特性与下位特性参数的关系,为产品优化设计提供了准确有效的手段。     

Simplified parasitic capacitance extraction of shield in HVDC converter system with boundary element method

It is critical to build a wide-band circuit model to conduct research on the characteristics of the electromagnetic disturbance source during the localization of high voltage direct current (HVDC) technology. Parasitic capacitance is most essential for modeling the equivalent circuit, so a fast and accurate computation of capacitance parameters plays a vital role. Because of the large size and complex structure of the converter equipment, it is impossible to obtain capacitance parameters by means of measurement or simulating calculation with finite element software. In this paper, a simplified method of capacitance extraction based on boundary element method is proposed, which can provide an efficient means of establishing simulation models. In the method presented, simulation model of the shield may not be chamfered. Consequently, the edge and corner of the shield do not need to be handled with a sphere, cylinder and other curved surface model. The availability of this method is demonstrated by comparing the capacitance parameters of chamfered shield with that of non-chamfered shield.     

芯片封装参数对功率模块热特性影响的研究

由于温度分布不均匀以及封装中各层材料之间的热膨胀系数不同,使功率模块在工作中产生交变的热应力,造成焊层疲劳、键合线脱落等失效形式,因此研究模块的热特性尤为重要。热的测量是电力电子系统中最困难的工作之一,对封装结构进行电-热-力精确的仿真分析,能够准确了解对器件不同部位的温度、应力分布。采用基于电-热-力多物理场的有限元仿真,研究了封装材料、封装参数和封装结构对功率器件的温度、热阻、热应力这些热特性的影响,为优化封装设计,最终提高功率模块可靠性提供了一定的参考。     

基于部分元等效电路的外旁通柜寄生参数分析

外旁通柜是ITER整流电源系统中进行过流和过压保护的重要设备。由于寄生参数的存在,会造成并联支路分流不均,导致个别器件过载而影响整个设备的运行。论文利用部分元等效电路（PEEC）方法,对外旁通柜进行了电路建模和寄生参数计算。最后通过仿真和实验对计算结果进行了验证,表明该方法对外旁通柜寄生参数的分析是正确并且有效的。     

计及焊层疲劳影响的风电变流器IGBT模块热分析及改进热网络模型

针对不同疲劳寿命时期对风电变流器绝缘栅双极型晶闸管(IGBT)模块结温的影响,分析焊层在不同脱落度下的IGBT模块热阻变化规律,并建立考虑热阻变化的改进热网络模型。首先,依据风电机组变流器IGBT模块的结构和材料属性,建立三维有限元热-结构耦合分析模型,对基板焊层和芯片焊层在不同脱落度下IGBT模块结温和热应力的分布规律进行仿真分析。其次,确定不同焊层脱落度下其热阻增量值,并建立IGBT模块改进热网络模型。最后,将三维有限元模型和改进热网络模型的结温计算结果进行对比分析,验证了所提的改进热网络模型的有效性。     

电动汽车永磁同步电机分布参数提取研究

电动汽车驱动系统通常由电池组、逆变器以及永磁同步电机构成。由于逆变器中功率半导体器件高频地开关,驱动系统会产生电磁干扰EMI（electromagnetic interference）。永磁同步电机为共模电磁干扰和差模电磁干扰提供了传播路径,其寄生参数增强了电磁干扰,因此它是电动汽车驱动系统EMI模型的重要组成部分。在分析电机物理结构的基础上,基于永磁同步电机的集总参数模型,将模型中的电路元件与电机寄生参数联系起来;然后通过理论计算和有限元仿真分析相结合的方法,提出了绕组电感、相间互感、寄生电容、铜耗电阻和铁损电阻的获取方法,并通过实验测量验证了理论计算方法的正确性。基于所提参数提取方法,得到了集总参数模型参数,通过仿真和网络分析仪实验测量进行了所提方法的验证。     

EMTP modeling of IGBT dynamic performance for power dissipationestimation

A new approach to the modeling of insulated gate bipolar transistors (IGBTs) for electromagnetic transients program (EMTP) simulation is developed. Other commercially available simulators, such as PSPICE, model the devices on an exact semiconductor physics basis. They suffer from large amounts of CPU time for sinewave pulsewidth modulation (PWM) inverter applications which require a complete cycle simulation at fundamental frequency with a small time step to cover the details of IGBT switching transients. This approach uses a curve-fitting method, combined with the point-by-point user-defined function available in EMTP, to model the dynamic characteristics of IGBTs. Since there is no device physics modeling required, this simulation is much faster than the conventional approach. The proposed method is applicable to both static and dynamic modeling, on a cycle-by-cycle basis, which is important for dynamic power dissipation and thermal analysis. The simulation includes IGBT turn-on and turn-off transients, IGBT saturation, free-wheeling diode forward voltage and reverse recovery characteristics. The simulation results are verified by comparison with experimental measured data. Measurements show a close agreement with simulations     

Power converter simulation module connected to the EMTP

A novel approach for power converter simulation in the electromagnetic transients program (EMTP) is presented. It is based on simultaneous interfacing of a converter simulation module with the EMTP network equations. Hybrid analysis, demonstrated to be more general than the compensation method, is used to model the nonlinear converter module network. The procedure used to formulate hybrid port equations is general and can be used for any converter module network with nonlinear branch functions. The valve model selection has no theoretical restrictions, and the particular case of valve modeling by ideal switches is simple to accommodate. The new approach is more general and efficient than the standard EMTP method for power converter simulation. Modularity permits incorporation of dedicated initialization procedures and programming of digital control schemes     

The effect of modeling types characterization for PV power source on maximum power point tracking

This paper deals with the problem of energy transfer maximization between a solar power source side and the load demand side. Owing to the multitude of mathematical models in the literature that claim to represent the behavior of the photovoltaic module, the work here is to throw light on the importance of choosing a proper mathematical model of the photovoltaic module for the above‐mentioned context with the target of enlarging the energy yield from such a generator system irrespective changing environmental conditions. First, a comparison between four mathematical models based on a single‐diode representation for photovoltaic generation source is presented. The objective of this analysis is to compute the errors between these models and the experimental data in predicting the maximum power point. Then an easy‐to‐implement tracking method for working on the maximum power point is assumed. The idea of this maximum power point tracking technique is to blend two conventional algorithms, namely incremental conductance and fractional open‐circuit voltage, in such a way as to improve the starting period of the normal incremental conductance algorithm, so that fast and accurate convergence can be achieved. A comparison between the dynamic control performances of the studied four different kinds of the single‐diode model under the maximum power condition is performed, and the impact of increasing the complexity of the single‐diode model commonly utilized to represent photovoltaic cell/module under the energy transfer maximization constraint for autonomous generation applications is finally explored. The paper extends and complements our recently published results in the literature. © 2016 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

A fast power loss calculation method for long real time thermal simulation of IGBT modules for a three‐phase inverter system

A fast power losses calculation method for long real time thermal simulation of IGBT module for a three‐phase inverter system is presented in this paper. The speed‐up is obtained by simplifying the representation of the three‐phase inverter at the system modelling stage. This allows the inverter system to be simulated predicting the effective voltages and currents whilst using large time‐step. An average power losses is calculated during each clock period, using a pre‐defined look‐up table, which stores the switching and on‐state losses generated by either direct measurement or automatically based upon compact models for the semiconductor devices. This simulation methodology brings together accurate models of the electrical systems performance, state of the art‐device compact models and a realistic simulation of the thermal performance in a usable period of CPU time and is suitable for a long real time thermal simulation of inverter power devices with arbitrary load. Thermal simulation results show that with the same IGBT characteristics applied, the proposed model can give the almost same thermal performance compared to the full physically based device modelling approach. Copyright © 2006 John Wiley & Sons, Ltd.     

Reliability analysis of electrical engineering power semiconductor devices

A new approach to predicting reliability indices based on the numerical analysis of nonuniform temperature fields of power semiconductor devices (PSDs) is presented. Thermal analysis of the power diode module is carried out in a two-dimensional formulation with junction temperature T_junc = 125°C. The finite difference method is used to solve the differential equation of heat conduction. During the numerical experiments, the ambient temperature (from 25 to 45°C) and dimensional orientation of the diode module vary. It was found that the temperature difference is more than 100°C. To analyze the reliability indices of the diode module, two mathematical models, Arrhenius and multiplicative (statistical), are selected. 1t is found that raising the ambient temperature from 25 to 45°C approximately halves the reliability indices of the power diode module. The vertical orientation of the module reduces the heat transfer and causes an increase in the failure rate indices to 10% under natural convection for T_amb = 25°C. When the diode module is lowered, the reliability indices drop by 18%, all other things being equal. The largest differences in the estimates of the reliability of PSDs are observed at a lower location of the diode assembly. For example, the failure rate for the Arrhenius model was 325 times higher than that of the multiplicative model for an ambient environment of 45°C. The necessity of taking into account the real unsteady temperature fields to increase the prediction reliability resource of PSDs is shown.