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1.
该文揭示了一种动热源摆式单轴微机电系统(MEMS)热加速度计的敏感机理。在给出敏感结构原理的基础上,通过建立二维物理研究模型、划分网格、加载加速度等方法对敏感结构内的温度场进行了计算。结果表明,开机1.8 s后在敏感结构内形成了一个稳定的以动热源为中心的温度场;输入加速度a时,动热源沿着加速度方向偏移,温度场随之偏移,敏感轴方向上对称设置的两个热线温差ΔTX随着输入加速度a的加大而呈线性增长,温度灵敏度为7.1×10-2 mK/g。根据输入-输出(a-VXOUT)特性曲线给出数学模型,得到该加速度计灵敏度为0.5 V/g,非线性度为2.8%,从而揭示了敏感机理。  相似文献   

2.
该文研究了一种基于强度解调的低成本光纤悬臂式加速度计。该加速度计由接收光纤、发射光纤、陶瓷插芯和陶瓷套管组成,接收光纤和发射光纤均为单模光纤(SMF)。对该加速度计的灵敏度进行理论分析并制作了一个光学加速度计,搭建了实验系统。实验结果表明,在工作频带30~1 000 Hz,该加速度计具有71.5 mV/g(g=9.8 m/s2)的灵敏度和良好的相频特性。  相似文献   

3.
该文提出了一种高灵敏度的热膨胀陀螺,并对其敏感机理进行了研究。通过COMSOL创建了该结构的二维模型,并对其进行了有限元分析。结果表明,输入功率为5 mW,输入角速度范围为-1 000~1 000 (°)/s时,提出的热膨胀陀螺温度灵敏度为2.12 mK·[(°)/s]-1,具有陀螺效应,且热膨胀陀螺灵敏度为1.98 mV·[(°)/s]-1,非线性度为7.64%。与之前的结构相比,陀螺灵敏度有提高。该高灵敏度热膨胀陀螺具有抗冲击能力强,制作成本低,工艺简单及可靠性高等优点,可用于航天、消费电子及军事等领域。  相似文献   

4.
采用高温固相法合成了蓝色荧光粉KNaCa2(PO4)2:Eu2+,利用X射线衍射(XRD)和光谱技术等表征了材料的性能。结果显示,少量Eu 2+的掺入并没有影响KNaCa2(PO4)2的晶体结构。 在399nm近紫外光激发下,KNaCa2(PO4)2:Eu2+材料发 射蓝光,发射光谱为400~600nm, 主发射峰位于471nm,对应Eu2+的4f65d1→ 4f7跃迁发射;471nm发射峰,对应的激发光 谱为250~450nm,主激发峰位于399nm,与近紫外芯片匹配很好。 以365nm近紫外光作为 激发源时,KNaCa2(PO4)2:Eu2+材料的发射强度约为商用蓝色荧光粉BAM:Eu 2+的85%;而以 399nm近紫外光作为激发源时,相较于BAM:Eu2+,KNaCa2(P O4)2:Eu2+材料具有更强的发射强 度。此外,KNaCa2(PO4)2:Eu2+和BAM:Eu2+的CIE色坐标接近,均位于蓝 色区域,色坐标分别 为(0.154,0.154)和(0.141,0.112)。研究结果 表明,KN aCa2(PO4)2:Eu2+是一种在三基色白光LED中有应用前景的蓝色荧光粉。  相似文献   

5.
介绍了国内外双色红外探测器的发展现状,并报道了中国电子科技集团公司第十一研究所(以下简称“中电十一所”)自行研制的像元间距为30 μm的Si基320×256短/中波双色红外探测器的性能。在77 K测试条件下,短波和中波两个波段的盲元率分别为0.88%和1.47%,平均峰值探测率分别为2.21×1012 cm·Hz1/2·W-1和2.13×1011 cm·Hz1/2·W-1,后截止波长分别为3.129 μm和 5.285 μm,且短波向中波波段的光谱串音为1.38%,中波向短波波段的光谱串音为2.82%。同时,该探测器在双波段具有较好的成像效果,为后续更大面阵、更佳性能的多波段探测器研究提供了基础。  相似文献   

6.
六方氮化硼是一种中子敏感材料。介绍了使用低压气相化学沉积在1673K下以大约20μm/h的生长速率制备了高质量203μm厚的六方氮化硼。在氮化硼的两侧沉积厚度为100nm的金电极,制备了垂直结构的六方氮化硼中子探测器。该器件的电学性质表明制备的六方氮化硼材料的迁移率寿命的乘积(μτ)为2.8×10-6cm2/V,电阻率为1.5×1014Ω·cm。在850V电压下,该探测器对热中子的探测效率为34.5%,电荷收集效率为60%。  相似文献   

7.
ZnO缓冲层改善Rubrene/C70有机太阳能电池的性能   总被引:2,自引:2,他引:0  
通过制备结构为ITO/ZnO/C70 /Rubrene/MoO3/Al 的有机太阳能电池(OSCs),研究了ZnO作为阴极 修饰层对Rubrene/C70有机太阳能电池性能的改善。同时通过 优化ZnO的厚度研究了ZnO的工作机理。 从实验结果可以看出,随着ZnO厚度的变化,器件的短路电流密度(Jsc)、开路电压(Voc)、填充因子 (FF)、光电转换效率(PCE)和串联电阻(Rs)等性能参数呈现出了规律 性变化,当ZnO层厚度比较 薄时,器件PCE随着厚度的增加不断增大,当ZnO层厚度为53nm时,器件PCE达到最高为1.13%, 对应的Jsc、Voc、FF分别为2.82mA·cm-2、0. 84V、45.86%,Rs为66.2Ω·cm2,当ZnO层厚度继续增 加时,器件PCE开始减小。对比没有ZnO阴极修饰层,器件最优时 的Jsc、Voc、FF和PCE 分别提高了49%、17%,Rs降低了56%。  相似文献   

8.
基于分子束外延(MBE)生长技术获得了高量子效率的InAs/GaSb T2SLs中波红外(MWIR)光电探测器结构材料,表现出了层状结构生长的光滑表面和出色的晶体结构均匀性。此超晶格中波红外探测器的50%截止波长约为5.5 μm,峰值响应率为2.6 A/W,77 K下量子效率超过了80%,与碲镉汞的量子效率相当。在77 K,-50 mV偏压下的暗电流密度为1.8×10-6 A/cm2,最大电阻面积乘积(RA)(-50 mV偏压)为3.8×105Ω·cm2,峰值探测率达到了6.1×1012 cm Hz1 / 2/W。  相似文献   

9.
采用铌铁矿前驱体两步法制备了Pb(Zn1/3Nb2/3)0.2(Hf1-xTix)0.8O3(PZNH1-xTx)钙钛矿压电陶瓷,研究了铪钛比对陶瓷相结构、电学性能和能量收集特性的影响。结果表明,当x=0.52时,陶瓷样品位于准同型相界,具有最优综合压电性能:居里温度TC=287 ℃,品质因数FOM≈14 753×10-15 m2/N,压电电荷常数d33=492 pC/N。由该组成材料构建的悬臂梁型压电能量收集器输出功率密度高达4.16 μW/mm3,所转化的电能可成功点亮138盏并联的LED灯。结果表明,PZNHT陶瓷在压电能量收集领域具有良好的应用潜力。  相似文献   

10.
针对近年来常规弹药制导化改造对经历高动态环境的加速度传感器的迫切需求,该文设计了一种抗高过载、低量程的微机电系统(MEMS)电容式加速度传感器。该加速度传感器使用4组折叠梁组对可动结构进行支撑,并带动其在敏感方向移动,同时敏感结构采用差分式电容检测结构和叉齿止档限位结构方案,降低了结构受冲击时的区域应力,提高了输出信号增益及传感器灵敏度。理论计算和有限元分析结果表明,传感器轴向灵敏度为0.22 pF/g(g=9.8 m/s2),可承受轴向幅值为3×104g、脉宽约8 ms的加速度冲击。  相似文献   

11.
该文提出了一种单轴微机电系统(MEMS)热膨胀流陀螺的基本结构,并揭示了其敏感机理。通过有限元法,利用COMSOL Multiphysics建立了陀螺的三维模型,在有无角速度时对陀螺敏感元件的温度场和等温线变化情况进行计算。结果表明,单轴MEMS热膨胀流陀螺具有陀螺效应,输入角速度为[-1 080 (°)/s, 1 080 (°)/s],陀螺的结构灵敏度为0.053 9 K/[(°)·s-1],非线性度为14.13%。  相似文献   

12.
Direct current measurements are performed up to 673K at circular and linear (shown in parenthesis) enhancement-mode metal oxide semiconductor field effect transistors (MOSFETs). These devices are fabricated on a p-type 6H-SiC epitaxial layer with a doping concentration NA ≈ 1 × 1016 cm−1. The n+ source/drain regions and the p+ regions for the channel stops are achieved by ion implantation of nitrogen and aluminum, respectively. Both MOSFET geometries show excellent output characteristics with a good saturation behavior even at elevated temperatures. The inversion layer mobility μn extracted in the linear region is 38 cm2·V−1·s−1 (35 cm2·V−1·s−1) and reveals a weak dependence on temperature with a maximum of 46 cm2·V−1·s−1 (42 cm2·V−1·s−1) at about 473K. Regarding the transfer characteristics, the drain current ID can be well modulated by the gate-source voltage VGS resulting in an Ion/Loff-ratio of 108 (108) at 303K and 105 (106) at 673K. In the subthreshold regime, ID can be pinched off well below 10 pA with a subthreshold swing of 150 mV/decade (155 mV/decade) at room temperature. The threshold voltage VT as a function of temperature shows two linear sections with negative temperature coefficients of −6.8 mV·K−1 (−6.8 mV·K−1) from 303 to 423K and −2.5 mV·K−1 (−2.0 mV·K−1) from 423 to 673K. By measuring VT as a function of bulk-source voltage VBS at different temperatures, NA can be directly estimated at a transistor and gives 9.6 × 1015 cm−3 (9.8 × 1015 cm−3). The measured bulk Fermi potential Φf of the p-type epitaxial layer deviates less than 10% from the calculated value at a given temperature.  相似文献   

13.
设计了一种可见光反射型光学读出非制冷热像元结构。理论分析表明热像元的热-机械灵敏度达到0.043deg·K-1,在热像元面积比已有报道减小75%的情况下,热-机械灵敏度反而提高至少79%。通过改变弯折梁底层金膜的面积来调节热像元的灵敏度,使其可在2.36×10-6rad·m2·W-1和9.21×10-6rad·m2·W-1之间变化。ANSYS仿真结果和理论结果吻合较好,验证了设计的正确性。  相似文献   

14.
在不同温度条件下对Cd0.9Zn0.1Te晶片进行In气氛退火热处理,显著提高了Cd0.9Zn0.1Te材料的电阻率。通过实验测量和理论建模计算,得到了1 073、1 023和973K条件下In原子在Cd0.9Zn0.1Te晶片中的扩散系数分别为4.25×10-9 cm2·s-1、9.02×10-10 cm2·s-1和2.17×10-10 cm2·s-1,并且拟合出了1 073~973K范围内扩散系数和温度之间的函数关系表达式D(T)=2.15×exp(-1.9/k0T)及频率因子D0等数据。最后,对实验结果进行了简要的对比和分析解释。  相似文献   

15.
Accurate, noninvasive, and self‐referenced temperature measurements at the submicrometer scale are of great interest, prompted by the ever‐growing demands in the fields of nanotechnology and nanomedicine. The thermal dependence of the phosphor's luminescence provides high detection sensitivity and spatial resolution with short acquisition times in, e.g., biological fluids, strong electromagnetic fields, and fast‐moving objects. Here, it is shown that nanoparticles of [(Tb0.914Eu0.086)2(PDA)3(H2O)]·2H2O (PDA = 1,4‐phenylenediacetic acid), the first lanthanide–organic framework prepared by the spray‐drying method, are excellent nanothermometers operating in the solid state in the 10–325 K range (quantum yield of 0.25 at 370 nm, at room temperature). Intriguingly, this system is the most sensitive cryogenic nanothermometer reported so far, combining high sensitivity (up to 5.96 ± 0.04% K?1 at 25 K), reproducibility (in excess of 99%), and low‐temperature uncertainty (0.02 K at 25 K).  相似文献   

16.
The annealing of 20CaO·20SiO2·7Fe2O3·6FeO glasses at 973K in vacuo produced clusters of iron oxide, the shape of which was nearly spherical and the diameter distributed in the narrow range 25–115Å. The phase of clusters was identified to be Fe3+(Fe3+ poststagger|1.30Fe2+ poststagger|0.55V0.15)·O4 in the inverse spinel structure based upon the Mössbauer spectra and x-ray diffraction profiles. The clusters exhibited superparamagnetism and their effective anisotropy energy constant was inversely proportional to the cluster diameter. The magnetization of the glasses measured by a vibrating sample magnetometer was 7.2 × 10-6 Wbmkg-1 at 10 kOe at room temperature and smaller than the value calculated assuming that the whole clusters have superparamagnetism. These results suggest the pinning of spins near the cluster surface.  相似文献   

17.
Photoelectric and electrical properties of polyphenylquinolines differing in the structure of donor bridge groups between quinoline moieties have been studied. It is demonstrated that films of the polymers synthesized exhibit a photosensitivity at the level of 105 cm2 J?1 (integrated sensitivity 5 × 10?4 lx?1 · s?1), with a quantum yield of carrier photogeneration of 0.07 and a carrier drift mobility on the order of 10?6 cm2 V?1 s?1. The fact that the electron and hole drift mobilities in polyphenylquinoline with a phenylamine bridge group are balanced makes the polymer promising for development of film-type devices based on the bipolar conductivity of a material (e.g., single-layer light-emitting diode).  相似文献   

18.
The 2-2 type BiFeO3-CuFe2O4(BFO-CFO) bilayer thin films were deposited on FTO/glass substrates by sol-gel method, using Bi(NO3)3·5H2O, Fe(NO3)3·9H2O and Cu(NO3)3·3H2O as the raw materials. The structure, surface morphologies and electric properties of the thin films were investigated. The XRD patterns show that the structure of BFO is the distorted rhombohedral perovskite with R3c:H (161) space lattice, CFO is the tetragonal spinel with type I41/amd (141) space lattice. The interface is obvious between the CFO and BFO films, which shows that the BFO and CFO have no inter-diffusion phenomena. When the frequency is 10 kHz, the dielectric loss peak is consistent with the dielectric relaxation of Wagner Maxwell. The leakage current density of BFO-CFO under positive and negative bias voltages is asymmetric, and there is a hysteresis phenomenon in the positive bias voltage. The results of XPS show that the Fe2+ of the BFO-CFO is decreased and the leakage current of the film is improved. The saturation magnetization (Ms) of BFO-CFO is 25.8 emu/cm3 at room temperature, which is about 40 times of the pure BFO.  相似文献   

19.
An open-loop resonator micro-optic gyro (R-MOG) with a 6 cm-long waveguide-type ring resonator is set up using the phase modulation spectroscopy technique. In the experiment, according to the test parameters of the resonator, the shot- noise-limited sensitivity is estimated to be 1.07×10-4 rad/s. From the test demodulation signal, the gyro dynamic range of ±7.0×103 rad/s is obtained. Using different phase modulation frequencies, the open-loop gyro output signal is observed when the equivalent gyro rotation ...  相似文献   

20.
Dependences of photoluminescence (PL) intensity for undoped and doped graded-gap AlxGa1?x As (x?0.36) solid solutions on the excitation level J (1019 photon cm?2 s?1?J?1022 photon cm?2 s?1) were investigated for various built-in electric fields E=e ?1E g (85 V/cm?E?700 V/cm). It was found that the accelerating effect of the field E gives rise to a complex dependence of intensity of the edge PL (I) on the excitation level. The nonlinearity of the I(J) dependence is attributed to the contribution of the two-photon absorption of PL emission when the latter is reemitted. An optimal range of E values exists (120 V/cm?E?200 V/cm). In this range, the contribution of two-photon absorption to the reemission process in undoped solid solutions is largest.  相似文献   

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