多孔硅/聚合物复合膜等效折射率的研究

用多孔Si（PS）圆柱空腔二维结构模型,理论研究了TE模式情况下PS／聚合物复合膜的等效折射率,给出了PS等效折射率与孔隙率和嵌入率的关系。实验采用波导耦合m线法分别研究了TE模和TM模入射情况下（633nm波长处）,孔隙率为73%的PS膜嵌入聚合物聚合基丙烯酸甲酯（PMMA）材料后的等效折射率与聚合物嵌入率的关系。理论分析与实验结果基本符合。     

新型共轭聚合物PDABTh／PS复合膜的光学三阶非线性研究

采用旋转涂布法在多孔硅（PS）中嵌入新型含偶氮苯与噻吩结构单元的共轭聚合物PDABTh,制备出聚合物PDABTh／PS复合膜。采用单光束反射z扫描方法分别对PS和pDABTh／PS复合膜在532nm处的非线性折射率进行TN量。实验结果表明,复合材料三阶非线性光学效应较PS得到了明显增强,为新型共轭聚合物PDABTh／P...     

多孔硅1064nm波长处三阶非线性光学性质

采用日蚀型单光束扫描法测量了在不同孔隙率情况下,多孔硅薄膜在波长（ λ） 为１ ０６４ ｎ ｍ 处的非线性折射率。实验结果表明,孔隙率对多孔硅的非线性折射率影响较小。与单晶硅相比,多孔硅的三阶非线性光学效应没有得到很明显的增强。但在５３２ ｎ ｍ 波长处因诱导吸收引起了非线性折射率较强的增大     

多孔硅薄膜的纵向均匀性及其光学特性研究

多孔硅样品使用脉冲电化学腐蚀法经过不同的腐蚀时间制备完成,使用反射光谱、光致发光光谱和SEM对多孔硅薄膜的纵向均匀性以及其光学特性进行了研究,还详细研究了随腐蚀深度变化的折射率和光学厚度(n*d)等光学参数。实验表明：随着腐蚀深度的增加,多孔硅薄膜的平均折射率n降低,即多孔度变大;多孔硅薄膜的光学厚度的形成速度减小;同时,反射光谱表现更弱的干涉性,表明薄膜的均匀性和界面的平整性变差;另外,光致发光谱的强度微弱变强。     

多孔硅-PMMA/DR1复合膜制备方法的研究

用直接浸泡、匀胶机涂布和超声波三种方法在多孔硅中嵌入了聚甲基丙烯酸甲酯/分散红1(PMMA/DR1),制备出多孔硅有机材料复合薄膜.研究了多孔硅孔隙率、匀胶机转速和PMMA甲苯溶液浓度等参量对PMMA/DR1嵌入多孔硅的影响.分析了嵌入PMMA/DR1后多孔硅的荧光及样品稳定性的变化情况.     

脉冲腐蚀法制备多孔硅及其光学特性研究

Labview软件控制腐蚀条件,用脉冲电化学腐蚀法制备多孔硅薄膜,其表面形貌用原子力显微镜观察并分析。用可见-紫外分光光度仪测量其反射谱,通过计算得出各种制备条件下,多孔硅薄膜的其它光学参数,即有效折射率neff,吸收系数α,有效介电常数的实部εer,和虚部εei,消光系数K,研究了入射光波长和孔隙率对这些光学常数的影响。     

脉冲腐蚀法制备多孔硅及其光学特性研究

Labview软件控制腐蚀条件,用脉冲电化学腐蚀法制备多孔硅薄膜,其表面形貌用原子力显微镜观察并分析。用可见-紫外分光光度仪测量其反射谱,通过计算得出各种制备条件下,多孔硅薄膜的其它光学参数,即有效折射率neff,吸收系数α,有效介电常数的实部εer和虚部εei,消光系数K。研究了入射光波长和孔隙率对这些光学常数的影响。     

一种纳米孔隙聚合物薄膜等效折射率模型

采用多相介质等效折射率的研究方法对聚苯乙烯PS(polystyrene)、聚甲基丙烯酸甲脂PMMA(polymethyl-methacylate)和纳米孔隙三相介质构成的纳米孔隙聚合物薄膜的等效折射率和孔隙率关系进行了研究,建立了这种纳米孔隙聚合物薄膜的等效折射率数学模型,并对此模型进行了模拟计算和实验验证,两者吻合得很好。     

非线性吸收对聚合物PMMA/DR1光漂白的影响

研究了在1064nm处非线性吸收对有机聚合物材料PMMA/DR1光漂白的影响。实验结果表明,在较强的入射光作用下,由于双光子吸收的作用,使得PMMA/DR1发生光漂白,其折射率产生微小的变化,且随光漂白时间的增加而产生饱和。     

共轭聚合物PFTQ/多孔硅复合膜的光致发光研究

为了实现硅基光电子集成,在多孔硅衬底上制备有机发光器件是一种很有优势的方法.采用匀胶机涂布法在多孔硅中嵌入了新型共轭有机聚合物聚(9,9-二辛基)-2,7-芴-co-N-(4-(2-苯基喹喔啉)苯)-4,4'-二苯胺(PFTQ),对比研究了多孔硅,PFTQ/多孔硅,PFTQ/硅以及PFTQ在甲苯溶液中的光致发光特性.实验结果表明:PFTQ/多孔硅复合膜光致发光强度是PFTQ/硅的2倍,而且相比在甲苯溶液中的PFTQ和PFTQ/硅,发光峰值有所红移,分析认为这是由于共轭聚合物在固态时有效共轭程度增加所致,并且与多孔硅中的激发载流子转移到聚合物分子上形成复合发光有关.     

Porous Polymer Films with Gradient‐Refractive‐Index Structure for Broadband and Omnidirectional Antireflection Coatings

Porous polymer films that can be employed for broadband and omnidirectional antireflection coatings are successfully shown. These films form a gradient‐refractive‐index structure and are achieved by spin‐coating the solution of a polystyrene‐block‐poly(methyl methacrylate) (PS‐b‐PMMA)/PMMA blend onto an octadecyltrichlorosilane (OTS)‐modified glass substrate. Thus, a gradient distribution of PMMA domains in the vertical direction of the entire microphase‐separated film is obtained. After those PMMA domains are removed, a PS porous structure with an excellent gradient porosity ratio in the vertical direction of the film is formed. Glass substrates coated with such porous polymer film exhibit both broadband and omnidirectional antireflection properties because the refractive index increases gradually from the top to the bottom of the film. An excellent transmittance of >97% for both visible and near‐infrared (NIR) light is achieved in these gradient‐refractive‐index structures. When the incident angle is increased, the total transmittance for three different incident angles is improved dramatically. Meanwhile, the film possesses a color reproduction character in the visible light range.     

Measurement of Composite Film Parameters by a Prism Coupler

A new polymer composite thin film DMACB/PEK-c is reported. After poling of the film, the refractive indices n t and n n, that is the in-film-plane and the normal-to-film-plane refractive indices at 633 nm and the thickness d were determined using the quasi-waveguide m -line method. The results of measurement and calculation are: n t=1.657 3±0.001 7, n n=1.627 8±0.001 9, and d =1.427 8±0.003 1 μm.     

多孔硅的孔隙对硫化锌/多孔硅光电性质的影响

为了研究衬底多孔硅(PS)的孔隙对硫化锌/多孔硅(ZnS/PS)复合体系的光学性能和电学性质的影响,采用脉冲激光沉积方法在不同孔隙度的PS衬底上沉积了硫化锌薄膜。利用X射线衍射仪、扫描电子显微镜、荧光分光光度计和Ⅰ-Ⅴ特性曲线分别研究了PS衬底上ZnS薄膜的晶体结构、表面形貌和ZnS/PS复合体系的光学和电学性质。结果表明,沉积的ZnS薄膜呈立方相晶体结构,沿β-ZnS(111)晶向择优取向生长。随着衬底PS孔隙的增多,ZnS薄膜衍射峰的强度减小,且薄膜表面出现一些空洞和裂缝;在ZnS/PS复合体系的光致发光谱中,PS的发光相对于未沉积ZnS薄膜的PS有所蓝移,随着PS孔隙的增多,该蓝移量增大,而且在光谱中间550nm左右出现了一个新的绿光发射,归因于ZnS的缺陷中心发光。ZnS的蓝、绿光与PS的红光相叠加,整个ZnS/PS复合体系呈现出较强的白光发射。ZnS/PS异质结的Ⅰ-Ⅴ特性曲线呈现出与普通二极管相似的整流特性,在正向偏置下,电流密度较大,电压降较低;在反向偏置下,电流密度接近于0。随着衬底PS孔隙的增多,正向电流增大。该项研究结果为固态白光发射器件的实现奠定了基础。     

氧化多孔硅周期性波导光栅耦合器的实验研究

报道了用两束相干激光在HF溶液中的多孔Si(PS)表面上干涉形成光强周期分布,通过光溶解得到了孔隙率周期变化的结构,从而制备出氧化PS周期性波导光栅。实现了辐射模与波导中传输模之间的耦合,并由外部入射光波或衍射光的方向确定了波导层的有效折射率。     

Self-diffraction in Porous Silicon/PMMA-DR1 Composite Films

Two-layer structure consisting of PS/PMMA-DR1 composite film planar waveguide layer on porous silicon cladding layer was fabricated in our experiment. The induced grating based on the third nonlinear optical properties was formed by interaction of two Nd ： YAG laser beams at 1 064 nm in the porous silicon/PMMA-DR1 waveguide. The diffraction efficiency of the first order diffracted light is measured to be about 0.2% of the total output.     

Synthesis and characterization of porous polymeric low dielectric constant films

This paper reports the synthesis and dielectric properties of a porous poly(arylether) material with an ultra-low dielectric constant for interlayer dielectric applications in microelectronics. The porous polymer films were successfully fabricated by a method of organic phase separation and evaporation. A dielectric constant k of 1.8 was achieved for a porous film with an estimated porosity of 40% and average pore size of 3 nm. Electrical and mechanical properties as well as coefficient of thermal expansion for both dense and porous polymer films were measured.     

Experimental testing of a random medium optical model of porous silicon for photovoltaic applications

We have developed a model for light propagation in porous silicon (PS) based on the theory of wave propagation in random media. The low porosity case is considered, with silicon being the host material assuming randomly distributed spherical voids as scattering particles. The specular and the diffuse part of the light could be determined and treated separately. The model is applied to the case in which porous silicon would be used as a diffuse back reflector in a thin‐film crystalline silicon solar cell realized in an ultrathin (1–3 μm) epitaxially grown Si layer on PS. Three layer structures (epi/PS/Si) have been fabricated by atmospheric pressure chemical vapor deposition (APCVD) of 150–1000 nm epitaxial silicon layers on silicon wafers of which 150–450 nm of the surface has been electrochemically etched. An excellent agreement is found between the experimentally measured reflection data in the 400–1000 nm wavelength range and those calculated using the proposed model. The values of the layer thickness agree, within a reasonable experimental error, with those obtained independently by cross sectional transmission electron microscopy (XTEM) analysis. This provides an experimental verification of the random medium approach to porous silicon in the low porosity case. The analysis shows that the epitaxial growth process has led to appreciable porosity decrease of an initially high porosity layer from about 60% to 20–30%. Copyright © 2001 John Wiley & Sons, Ltd.