Combined theoretical studies of the optical characteristics of II-IV-V2 semiconductor thin films

The optical absorbance of four ternary thin films, i.e. MgSiP₂, MgGeP₂, MgSiAs₂, MgGeAs₂ have been theoretically examined over a wide range of wavelength from 300 nm to 800 nm. The combination of first-principle electronic structure calculations and the optical matrix approach for modeling the multilayer assembly have been employed for theoretical studies. The analysis of the calculated absorbance spectra at room temperature with unpolarized light and normal incidence, revealed that MgGeAs₂ with a direct energy band gap of 1.6 eV exhibit a considerable high optical absorption, where a thickness of 3.2 μm of this thin film is sufficient to absorb 90% of the incident light and generates a maximum photocurrent of ∼23 mA/cm².     

Annealing induced reorientation of crystallites in Sn doped ZnO films

Tin doped ZnO thin films were prepared by employing a simplified spray pyrolysis technique using a perfume atomizer and subsequently annealed under different temperatures from 350 °C to 500 °C in steps of 50 °C. The structural, optical, electrical, photoluminescence and surface morphological properties of the as-deposited films were studied and compared with that of the annealed films. The X-ray diffraction studies showed that as-deposited film exhibits preferential orientation along the (0 0 2) plane and it changes in favour of (1 0 0) plane after annealing. The increase in crystallite size due to annealing is explained on the basis of Ostwald ripening effect. It is found that the optical transmittance and band gap increases with increase in annealing temperature. A slight decrease in resistivity caused by annealing is discussed in correlation with annealing induced defect modifications and surface morphology.     

HFCVD grown graphene like carbon–nickel nanocomposite thin film as effective counter electrode for dye sensitized solar cells

The two step processes of hot filament chemical vapor deposition (HFCVD) and DC sputtering were used to grow graphene like carbon (GLC)–nickel (Ni) nanocomposite thin film on fluorine-doped tin oxide (FTO) glass and applied as counter electrode (CE) for dye sensitized solar cells (DSSCs). The morphological and absorption properties revealed uniform GLC–Ni thin film with reasonable transmittance. The GLC–Ni thin film showed enhanced electrical conductivity as compared to FTO. The good electrocatalytic activity towards iodide ions in redox electrolyte was showed by the prepared GLC–Ni/FTO thin film electrode. The fabricated DSSC with GLC–Ni/FTO counter electrode (CE) presented relatively moderate solar-to-electrical conversion efficiency of ∼3.1% with high short-circuit current density (J_SC) of ∼10.03 mA/cm², open circuit voltage (V_OC) of ∼0.663 V with fill factor (FF) of ∼0.45, which might attribute to enhanced electrical conductivity and the electrocatalytic activity of GLC–Ni/FTO CE.     

Influence of thermal annealing on optical properties and structure of aluminium oxide thin films by filtered cathodic vacuum arc

Optical and structural properties of aluminium oxide thin films are investigated in the annealing temperature range of 200–900 °C. The changes in optical properties and film structure show the great dependence on the temperature. For the film annealed at low temperatures (from 200 °C to 600 °C), the film optical properties, such as transmittance and optical constants, could be improved by thermal annealing with amorphous structure and smooth surface. However, for the film annealed at higher temperature (e.g. 900 °C), the poor performance of optical properties indicates undesirable application for precise use in optics due to significant changes in both structure and surface roughness. At optimum annealing temperature of 600 °C, the transmittance could reach as high as that of substrate and the film possesses better optical constants (refractive index was 1.73 and extinction coefficient was ∼10⁻⁴ at 550 nm) with remaining amorphous structure and smooth surface.     

Effect of sputtering power on the electrical and optical properties of Ca-doped ZnO thin films sputtered from nanopowders compacted target

In the present work, we have deposited calcium doped zinc oxide thin films by magnetron sputtering technique using nanocrystalline particles elaborated by sol–gel method as a target material. In the first step, the nanoparticles were synthesized by sol–gel method using supercritical drying in ethyl alcohol. The structural properties studied by X-ray diffractometry indicates that Ca doped ZnO has a polycrystalline hexagonal wurzite structure with a grain size of about 30 nm. Transmission electron microscopy (TEM) measurements have shown that the synthesized CZO is a nanosized powder. Then, thin films were deposited onto glass substrates by rf-magnetron sputtering at ambient temperature. The influence of RF sputtering power on structural, morphological, electrical, and optical properties were investigated. It has been found that all the films deposited were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (0 0 2) crystallographic direction. They have a typical columnar structure and a very smooth surface. The as-deposited films show a high transmittance in the visible range over 85% and low electrical resistivity at room temperature.     

Influence of Nd dopant amount on microstructure and photoluminescence of TiO2:Nd thin films

TiO₂ and TiO₂:Nd thin films were deposited using reactive magnetron sputtering process from mosaic Ti–Nd targets with various Nd concentration. The thin films were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM) and spectroscopic techniques. Photoluminescence (PL) in the near infrared obtained upon 514.5 nm excitation was also examined. The relationship between the Nd concentration, structural, optical and photoluminescence properties of prepared thin films was investigated and discussed. XRD and TEM measurements showed that an increase in the Nd concentration in the thin films hinders the crystal growth in the deposited coatings. Depending on the Nd amount in the thin films, TiO₂ with the rutile, mixed rutile–amorphous or amorphous phase was obtained. Transmittance measurements revealed that addition of Nd dopant to titania matrix did not deteriorate optical transparency of the coatings, however it influenced on the position of the fundamental absorption edge and therefore on the width of optical band gap energy. All TiO₂:Nd thin films exhibited PL emission that occurred at ca. 0.91, 1.09 and 1.38 μm. Finally, results obtained for deposited coatings showed that titania with the rutile structure and 1.0 at.% of Nd was the most efficient in VIS to NIR photon conversion.     

Effect of magnetic fields on the abnormal electroresistance behavior in epitaxial thin films of La0.8Ca0.2MnO3

We report an unusual electroresistance (ER) behavior induced by a current and its response to magnetic fields in La_0.8Ca_0.2MnO₃ epitaxial thin films. These thin films were fabricated on SrTiO₃ (1 0 0) substrate using pulsed laser deposition (PLD) technique. It is found that the electric resistivity in these films is significantly enhanced by applying a dc current over a threshold value. Simultaneously, an abnormal electroresistance behavior appears in the temperature range from 10 to 300 K. The enhanced resistance turns out to be very sensitive to a weak current. Even a very small dc current can remarkably depress the high resistance, showing an unusual colossal ER effect. The ER reaches ∼1175% at temperatures lower than ∼50 K, and ∼705% at 300 K for a current changing from 0.72 to 10.5 μA. The influence of magnetic fields on the transport was also studied. The I–V curves can be strongly influenced by a low magnetic field even at room temperature. The deduced magnetoresistance (MR) reaches 120% at 300 K upon applying a magnetic field of 0.25 T. An interesting phenomenon is that the observed MR is current dependent.     

Annealing effect on the microstructure and photoluminescence of ZnO thin films

Zinc oxide thin films have been obtained by pulsed laser ablation of a ZnO target in O₂ ambient at a pressure of 0.13 Pa using a pulsed Nd:YAG laser. ZnO thin films deposited on Si (1 1 1) substrates were treated at annealing temperatures from 400 °C up to 800 °C after deposition. The structural and optical properties of deposited thin films have been characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, photoluminescence spectra, resistivity and IR absorption spectra. The results show that the obtained thin films possess good single crystalline with hexagonal structure at annealing temperature 600 °C. Two emission peaks have been observed in photoluminescence spectra. As the post-annealing temperature increase, the UV emission peaks at 368 nm is improved and the intensity of blue emission at 462 nm decreases, which corresponds to the increasing of the optical quality of ZnO film and the decreasing of Zn interstitial defect, respectively. The best optical quality for ZnO thin films emerge at post-annealing temperature 600 °C in our experiment. The measurement of resistivity also proves the decrease of defects of ZnO films. The IR absorption spectra of sample show the typical Zn–O bond bending vibration absorption at wavenumber 418 cm⁻¹.     

New natively textured surface Al-doped ZnO-TCOs for thin film solar cells via magnetron sputtering

Natively textured surface aluminum doped zinc oxide (ZnO:Al) thin films were directly deposited via pulsed direct current (DC) reactive magnetron sputtering on glass substrates. During the reactive sputtering process, the oxygen gas flow rate was varied from 8.5 sccm to 11.0 sccm. The influences of oxygen flow rate on the structural, electrical and optical properties of naturally textured ZnO:Al TCO thin films with milky surface were investigated in detail. Gradual oxygen growth (GOG) technique was developed in the reactive sputtering process for textured ZnO:Al thin films. The light-scattering ability and optical transmittance of the natively textured ZnO:Al TCO thin films can be improved through gradual oxygen growth method while maintaining a low sheet resistance. Typical natively textured ZnO:Al TCO thin film with crater-like surface exhibits low sheet resistance (R_s ～ 4 Ω), high transmittance (T_a > 85%) in visible optical region and high haze value (12.1%).     

Synthesis and properties of sandwiched films of epoxy resin and graphene/cellulose nanowhiskers paper

Graphene (GN)-based composite paper containing 10 wt.% cellulose nanowhiskers (CNWs) exhibiting a tensile strength of 31.3 MPa and electrical conductivity of 16 800 S/m was prepared by ultrasonicating commercial GN powders in aqueous CNWs suspension. GN/CNWs freestanding paper was applied to prepare the sandwiched films by dip coating method. The sandwiched films showed enhanced tensile strength by over two times higher than the neat resins. The moduli of the sandwiched films were around 300 times of the pure resins due to the high content of GN/CNWs paper. The glass transition temperature of the sandwiched films increased from 51.2 °C to 57.1 °C for pure epoxy (E888) and SF (E888), and 49.8 °C to 64.8 °C for pure epoxy (650) and SF (650), respectively. The bare conductive GN/CNWs paper was well protected by the epoxy resin coating, which is promising in the application as anti-static materials, electromagnetic interference (EMI) shielding materials.     

Effect of silica coating thickness on the thermal conductivity of polyurethane/SiO2 coated multiwalled carbon nanotube composites

Silica coated multiwalled carbon nanotubes (SiO₂@MWCNTs) with different coating thicknesses of ∼4 nm, 30–50 nm, and 70–90 nm were synthesized by a sol–gel method and compounded with polyurethane (PU). The effects of SiO₂@MWCNTs on the electrical properties and thermal conductivity of the resulting PU/SiO₂@MWCNT composites were investigated. The SiO₂ coating maintained the high electrical resistivity of pure PU. Meanwhile, incorporating 0.5, 0.75 and 1.0 wt% SiO₂@MWCNT (70–90 nm) into PU, produced thermal conductivity values of 0.287, 0.289 and 0.310 W/mK, respectively, representing increases of 62.1%, 63.3% and 75.1%. The thermal conductivity of PU/SiO₂@MWCNT composites was also increased by increasing the thickness of the SiO₂ coating.     

Effects of substrate parameters on structure and optical properties of ZnO thin films fabricated by pulsed laser deposition

Highly oriented zinc oxide thin films have been grown on quartz, Si (1 1 1) and sapphire substrates by pulsed laser deposition (PLD). The effect of temperature and substrate parameter on structural and optical properties of ZnO thin films has been characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), optical transmission spectra and PL spectra. The experimental results show that the best crystalline thin films grown on different substrate with hexagonal wurtzite structure were achieved at growth temperature 400–500 °C. The growth temperature of ZnO thin film deposited on Si (1 1 1) substrate is lower than that of sapphire and quartz. The band gaps are increasing from 3.2 to 3.31 eV for ZnO thin film fabricated on quartz substrate at growth temperature from 100 to 600 °C. The crystalline quality and UV emission of ZnO thin film grown on sapphire substrate are significantly higher than those of other ZnO thin films grown on different substrates.     

Optical and electrical properties of indium tin oxide thin films sputter-deposited in working gas containing hydrogen without heat treatments

Polycrystalline thin films of indium tin oxide sputter-deposited in the working gas containing hydrogen of 0.3–1.5% exhibited transmittance of ≥ 80% for visible lights and blue-shift of ≥ 0.1 eV in the optical absorption energy. The film deposited in the gas containing hydrogen of 1% demonstrated almost flat temperature-dependent resistivity and the lowest resistivity of ≈ 1.5 × 10^? 4 Ω cm at room temperature. The carrier density showed an inverse V-shaped behavior with the maximum at the hydrogen concentration of 1%. The mobility stayed at almost constant below the hydrogen concentration of 1% and dropped rather rapidly above 1%.     

Effect of sputtering pressure and annealing temperature on the properties of indium tin oxide thin films

Indium tin oxide (ITO) thin films were deposited on glass substrates by RF sputtering system at different sputtering pressure (SP) (20–34 mTorr) and room temperature. The sputtering pressure effects on the deposition rate, electro-optical and structural properties of the as-deposited films were systematically investigated. The optimum sputtering pressure of 27 mTorr, giving a good compromise between electrical conductivity and optical transmittance was found to deposit films. The films were heat-treated in vacuum (200–450 °C) and their electro-optical and structural properties investigated with temperature. A criterion factor Q, which is the ratio between the normalized average transmission to normalized resistivity was defined. It has been observed that Q has its maximum value for heat treatment at 400 °C and the X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis proves the films have preferred crystal growth towards (2 2 2) direction and average size of grains are 35–40 nm.     

The effects of texture and grain morphology on the fracture toughness and fatigue crack growth resistance of nanocrystalline platinum films

The fracture toughness and fatigue crack growth resistance of nanocrystalline materials are significantly affected by the thickness of the specimen. In this work we relate the mechanical properties of nanocrystalline platinum films to their texture and grain morphology. Tensile, creep and fatigue testing of annealed, ∼1 μm films resulted in mechanical properties similar to the as-received films (yield strength of ∼1.2 GPa, fracture toughness ∼17.8 MPa √m, and a fatigue crack growth power law exponent of ∼4.2). However, the breakdown of the initially columnar grain morphology had a marked effect on the transition point from an intergranular to transgranular fatigue cracking mode. Finite element modeling suggests that cyclic (fatigue) grain coarsening and the transition from inter- to transgranular cracking modes are a result of the relative importance of dislocation slip accommodation on in-plane and through-thickness oriented slip directions.     

Wide bandgap Mg-doped ZnAlO thin films for optoelectronic applications

Magnesium-doped ZnAlO thin films were grown on quartz substrate by ablating the sintered target with a KrF excimer laser. The effect of growth temperature from 30 °C to 700 °C on structural, optical, and electrical properties has been studied. These films are highly transparent in visible spectrum with average transmittance of 82%. The films grown at low temperature are amorphous while films grown at high temperature are crystalline in nature. These films are highly oriented along (0 0 2) direction. The electrical conductivity, carrier concentration, and electron mobility is found to increase with increase in temperature and then decreases with further increase in temperature. The bandgap is found to vary from 3.86 eV to 4.00 eV for various films.     

Effect of oxygen partial pressure on microstructural and optical properties of titanium oxide thin films prepared by pulsed laser deposition

Nanocrystalline titanium oxide (TiO₂) thin films were deposited on silicon (1 0 0) and quartz substrates at various oxygen partial pressures (1 × 10⁻⁵ to 3.5 × 10⁻¹ mbar) with a substrate temperature of 973 K by pulsed laser deposition. The microstructural and optical properties were characterized using Grazing incidence X-ray diffraction, atomic force microscopy, UV–visible spectroscopy and photoluminescence. The X-ray diffraction studies indicated the formation of mixed phases (anatase and rutile) at higher oxygen partial pressures (3.5 × 10⁻² to 3.5 × 10⁻¹ mbar) and strong rutile phase at lower oxygen partial pressures (1 × 10⁻⁵ to 3.5 × 10⁻³ mbar). The atomic force microscopy studies showed the dense and uniform distribution of nanocrystallites. The root mean square surface roughness of the films increased with increasing oxygen partial pressures. The UV–visible studies showed that the bandgap of the films increased from 3.20 eV to 3.60 eV with the increase of oxygen partial pressures. The refractive index was found to decrease from 2.73 to 2.06 (at 550 nm) as the oxygen partial pressure increased from 1.5 × 10⁻⁴ mbar to 3.5 × 10⁻¹ mbar. The photoluminescence peaks were fitted to Gaussian function and the bandgap was found to be in the range ∼3.28–3.40 eV for anatase and 2.98–3.13 eV for rutile phases with increasing oxygen partial pressure from 1 × 10⁻⁵ to 3.5 × 10⁻¹ mbar.     

Influence of Ar/O2 ratio on the properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering

Ga-doped zinc oxide (ZnO:Ga) transparent conductive films with highly (002)-preferred orientation were deposited on glass substrates by DC reactive magnetron sputtering method in Ar + O₂ ambience with different Ar/O₂ ratios. The structural, electrical, and optical properties were investigated by X-ray diffraction, Hall measurement, and optical transmission spectroscopy. The resistivity and optical transmittance of the ZnO:Ga thin films are of the order of 10^− 4 Ω cm and over 85%, respectively. The lowest electrical resistivity of the film is found to be about 3.58 × 10^− 4 Ω cm. The influences of Ar/O₂ gas ratios on the resistivity, Hall mobility, and carrier concentration were analyzed.     

Fabrication of transparent mullite ceramic by spark plasma sintering from powders synthesized via sol–gel process combined with pulse current heating

Mullite nanopowders were synthesized by combining the advantages of the sol–gel process with the rapid synthesis provided by pulse current heating. The mullite ceramic with an infrared transmittance of 83–88% in the wavelength range from 2.5 to 4 μm with a fine grain size of 200 nm was obtained by spark plasma sintering at 1350 °C. Due to the high relative density and the small grain size, the hardness and toughness values of the sample reached 17.82 GPa and 3.6 MPa m^1/2, respectively. In contrast, when the mullite powders synthesized in a muffle furnace, an intermediate phase occurred so that the powder synthesis required high crystallization temperatures and resulted in agglomerated particles. Thus, the mullite ceramics required high temperatures for densification. As a result, the optical and mechanical properties of the ceramics were poor due to the low relative density and the elongated grain growth.     

Effect of thickness on structural,optical, electrical and morphological properties of nanocrystalline CdSe thin films for optoelectronic applications

This paper presents effect of thickness on the physical properties of thermally evaporated cadmium selenide thin films. The films of thickness 445 nm, 631 nm and 810 nm were deposited employing thermal evaporation technique on glass and ITO coated glass substrates followed by thermal annealing in air atmosphere at temperature 300 °C. The as-deposited and annealed films were subjected to the XRD, UV–Vis spectrophotometer, source meter, SEM and EDS to find the structural, optical, electrical, morphological and compositional analysis respectively. The structural analysis shows that the films have cubic phase with preferred orientation (1 1 1) and nanocrystalline nature. The structural parameters like inter-planner spacing, lattice constant, grain size, number of crystallites per unit area, internal strain, dislocation density and texture coefficient are calculated. The optical band gap is found in the range 1.69–1.84 eV and observed to decrease with thickness. The electrical resistivity is found to increase with thickness for as-deposited films and decrease for annealed films. The morphological studies show that the as-deposited and annealed films are homogeneous, smooth, fully covered and free from crystal defects like pin holes and voids. The grains in the as-deposited films are densely packed, well defined and found to be increased with thickness.