采用8QAM调制的GSM/EDGE移动通信系统

在与现有GSM/EDGE系统兼容,且不改变该系统发送和接收滤波器的基础上,为了改善基于8PSK调制方案的GSM/EDGE的性能,建议将GSM/EDGE的8PSK调制方式改为8QAM调制方式.并给出相位旋转的方法,解决了功率放大器非线性引起的频谱再生问题.同时,调整了8QAM星座图上的信号点位置,保持了原有EDGE系统发送和接收滤波器.在Matlab仿真实验中表明,相对于现有的GSM/EDGE 8PSK调制方案,GSM/EDGE的8QAM调制方案能够在达到相同误码率的情况下,信噪比提高约5 dB.     

GSM网络演变为EDGE网络使用的8PSK调制

GSM向3G的演进过程中,首先在现有的GSM网改进为能承载GPRS业务的网络,其数据传输速率达到170kb／s。然后再演变为EDGE（EnhancedDataratesforGSMEvolution）,其数据传输速率可达384kb／s。伴随着系统由GSM网络演变为EDGE,系统的调制方式将由GMSK调制方式改为8PSK调制。本文主要讨论数字调制和EDGB中的8PSK调制方案。一、数字调制如同模拟调制,数字调制也可分为频率调制、相位调制和幅度调制,性能各有千秋。由于频率、相位调制对噪声抑制更好,因此成为当今大多数通信设备的首选方案。1数字调频数字调频（或频移键控…     

EDGE中8PSK调制的软件实现*

EDGE作为GSM增强数据速率演进系统,其关键技术之一是引入具有更高调制速率的8PSK调制。EDGE中8PSK调制不同于一般8PSK调制,它采用的脉冲成型滤波器是对GMSK进行Laurent分解获得的线性GMSK脉冲,且采用硬件电路实现。硬件实现Laurent分解及成型滤波存在电路成本高、灵活性差、精度低、结构复杂等缺点。针对EDGE中硬件实现8PSK的这些缺点,提出一种易于软件实现的数字信号处理算法。该算法利用正交调制实现方式与软件无线电技术,可在通用编程硬件平台上软件实现8PSK调制,具有可移植性、易实现性、成本低等优点,可用于GSM增强数据速率演进系统中。本文网络版地址：http：//www.eepw.com.cn/article/170159.htm     

EDGE中的8PSK技术

改进数据率GSM服务(EDGE)是第二代GSM移动通信系统向第三代移动通信系统平滑过渡的新的无线接入技术。与GSM系统不同的是,EDGE在调制方式上没有采用高斯最小移频键控(GMSK)技术,而是应用了改进的八进制相移键控(8PSK)技术来提供更高的数据传输速率。文章介绍了EDGE技术的提出、基本概念及其采用的调制技术,阐述了8PSK技术的基本原理。     

增强型数据业务EDGE技术

增强型数据业务(EDGE)是将现有第二代TDMA移动通信系统推向第三代移动通信系统平滑过渡的一种方案，主要在第二代GSM中采用了一种改进的多电平8—PSK调制方式。因此介绍了EDGE的概念、发展过程、技术标准、承载业务等，并分析了在现有GSM网中部署EDGE对原有网络系统产生的影响。     

爱立信无线多媒体速率达384kb

全球首次通过EDGE增强GSM网络现场演示数据速度高达384kbit／s的无线多媒体业务。近日，爱立信成功地演示了现有GSM网络以384 kbit/s数据速率处理无线多媒体业务的能力，如国际互联网/企业内联网、可视会议和电子邮件等。     

EDGE无线网络优化的实施

1概述 EDGE（Enhanced Data Rates for GSM Evolution）是GSM增强型数据速率解决方案，中国移动已于2007年实现了全网的EDGE改造，EDGE的无线覆盖率与GSM基本相当，实际路测的应用层平均下载速率超过了100kbit／s，能较好地满足大多数移动数据业务的需求。相应地，EDGE无线网络优化已成为非常重要的一个课题。     

GSM系统中高效数据传输业务的实现

本评议提出了一个基于GSM系统的高效数据传输方案,它采用RS码与TCM级联的编码调制结构替代GSM原有的GMSK调制方案,以提供384kbit/s的数据业务,并引用相位校正单元以克服恶劣的无线传输环境所造成的相位噪声,该方案被集成在GSM平台上,并在典型的无线传输模型下与GSM的96kbit/s全速率业务的信道进行了比较,结果表明该编码调制方案在将编码调制效率提高一倍的前提下,仍然能保证传输的可靠性。     

EGPRS与3G共创无缝移动宽带网络

EGPRS是GPRS空中接口的一个增强版本,其标准化工作早在2000年就已由3GPP完成。EGPRS亦称EDGE,是增强型数据速率GSM演进（Enhanced Data Rates for Global Evolution）的简称。它通过采用8PSK调制技术提高系统的数据速率并实现更高的比特率。     

基于PSK调制的激光通信系统研究

设计了一种基于PSK(相移键控)外调制的激光通信系统。该系统选用637nm的全固态激光器作为光源,利用FPGA(现场可编程门阵列)开发板作为调制解调硬件控制声光调制器将调制信号加载于激光,通过大气信道传输,采用光电倍增管作为激光接收器。对传统PSK解调进行了改进,消除了相位模糊现象,搭建了完整的激光通信系统实验平台。实现了通信速率为115.2kbit/s、误码率低于10-8的激光通信系统。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.