Preparation and characterization of unimorph actuators based on piezoelectric Pb(Zr0.52Ti0.48)O3 materials

This paper describes the preparation and characterization of unimorph actuators for deformable mirrors, based on Pb(Zr_0.52Ti_0.48)O₃ (PZT52) thin film. As comparison, two different designs, where the PZT layer in the unimorph actuators was driven by either interdigitated electrodes (IDT-mode) or parallel plate electrodes (d₃₁-mode), were investigated. The actuators utilize a unimorph membrane (diaphragm) structure consisting of an active PZT piezoelectric layer and a passive SiO₂/Si composite layer. To fabricate the diaphragm structures, n-type (1 0 0) silicon-on-insulator (SOI) wafers with 1 μm thermal SiO₂ were used as substrates (for d₃₁-mode actuators, the upper Si part of SOI need to be heavily doped and used as bottom electrodes simultaneously). Sol-gel derived PZT piezoelectric layers with PbTiO₃ (PT) bufferlayer in total of 0.86 μm were then fabricated on them, and 0.15 μm Al reflective layers were deposited and patterned into top electrode geometries, subsequently. The diaphragms were released using orientation-dependent wet etching (ODE) with 5-10 μm residual silicon layers. The complete unimorph actuators comprise 4 × 4 discrete units (4 mm² in size) with patterned PZT films for parallel plate configuration or 3 × 3 individual pixels (2 mm in IDT diameter) with continuous PZT films in graphic region for IDT configuration. The measurement results indicated that both of the two configurations can generate considerable deflections at low voltage. The measured maximum central deflections at 15 V were approximately 2.5 μm and 2.8 μm, respectively. The intrinsic strain conditions shaping the deflection profiles for the diaphragm actuators were also analyzed. In this paper, the behaviors of clamped parallel plate configuration without a diaphragm were also evaluated.     

Edge-bipancyclicity of the k-ary n-cubes with faulty nodes and edges

The k-ary n-cube has been one of the most popular interconnection networks for massively parallel systems. In this paper, we investigate the edge-bipancyclicity of k-ary n-cubes with faulty nodes and edges. It is proved that every healthy edge of the faulty k-ary n-cube with f_v faulty nodes and f_e faulty edges lies in a fault-free cycle of every even length from 4 to kⁿ − 2f_v (resp. kⁿ − f_v) if k ? 4 is even (resp. k ? 3 is odd) and f_v + f_e ? 2n − 3. The results are optimal with respect to the number of node and edge faults tolerated.     

Piezoelectric properties of microfabricated (K,Na)NbO3 thin films

A novel microfabrication method of lead-free piezoelectric sodium potassium niobate [(K,Na)NbO₃, KNN] thin films was proposed, and the piezoelectric characteristics of the KNN microactuators were evaluated. The KNN thin films were directly deposited on microfabricated Si microcantilevers. The transverse piezoelectric coefficient d₃₁ of the KNN films was calculated as −53.5 pm/V at 20 V_pp from the tip displacement of the microcantilevers. However, the tip displacement showed large electric-field dependence because of the extrinsic piezoelectric effect, and the intrinsic piezoelectric effect of the KNN microcantilevers was smaller than that of KNN on unprocessed thick substrates. In contrast, the extrinsic piezoelectric effect was almost independent of the microfabrication of the KNN films.     

On embedding cycles into faulty twisted cubes

The twisted cube TQ_n is an alternative to the popular hypercube network. Recently, some interesting properties of TQ_n were investigated. In this paper, we study the pancycle problem on faulty twisted cubes. Let f_e and f_v be the numbers of faulty edges and faulty vertices in TQ_n, respectively. We show that, with f_e + f_v ? n − 2, a faulty TQ_n still contains a cycle of length l for every 4 ? l ? ∣V(TQ_n)∣ − f_v and odd integer n ? 3.     

Finite element analysis and experiments on a silicon membrane actuated by an epitaxial PZT thin film for localized-mass sensing applications

In this paper, we investigate the performance of a piezoelectric membrane actuated by an epitaxial piezoelectric Pb(Zr_0.2Ti_0.8)O₃ (PZT) thin film for localized-mass sensing applications. The fabrication and characterization of piezoelectric circular membranes based on epitaxial thin films prepared on a silicon wafer are presented. The dynamic behavior and mass sensing performance of the proposed structure are experimentally investigated and compared to numerical analyses. A 1500 μm diameter silicon membrane actuated by a 150 nm thick epitaxial PZT film exhibits a strong harmonic oscillation response with a high quality factor of 110-144 depending on the resonant mode at atmospheric pressure. Different aspects related to the effect of the mass position and of the resonant mode on the mass sensitivity as well as the minimum detectable mass are evaluated. The operation of the epitaxial PZT membrane as a mass sensor is determined by loading polystyrene microspheres. The mass sensitivity is a function of the mass position, which is the highest at the antinodal points. The epitaxial PZT membrane exhibits a mass sensitivity in the order of 10⁻¹² g/Hz with a minimum detectable mass of 5 ng. The results reveal that the mass sensor realized with the epitaxial PZT thin film, which is capable of generating a high actuating force, is a promising candidate for the development of high performance mass sensors. Such devices can be applied for various biological and chemical sensing applications.     

Ferroelectric properties of direct-patterned half-micron thick PZT film

Ferroelectric properties of direct-patterned PZT(PbZr_0.52Ti_0.48O₃) films with 460 μm × 460 μm size and 510 nm thick were analyzed for applying to micro-detecting devices. A photosensitive solution containing ortho-nitrobenzaldehyde was used for the preparation of direct-patterned PZT film. PZT solution was coated on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrate for three times to obtain half-micron thick film and three times of direct-patterning process were repeated to define a pattern on multi-layer PZT film. Through intermediate and final anneal procedure of direct-patterned PZT film, any shrinkage along horizontal direction was not observed within this experimental condition, i.e., the size of the pattern was preserved after annealing, only a thickness reduction was observed after each annealing treatment. Ferroelectric properties of direct-patterned PZT film with 460 μm × 460 μm size and 510 nm thick were compared with those of un-patterned conventional PZT film and shown to be almost the same. Through this work, the high potentiality of direct-patternable PZT film for applying to micro-devices without the introduction of physical damages from dry-etching could be confirmed.     

Sputtered thin film piezoelectric aluminum nitride as a functional MEMS material

A comprehensive study on the complete process for the fabrication of AlN-based MEMS sensors and actuators is presented. Varying the bias voltage during the reactive rf sputtering enables to adjust the stress level in AlN films in the range of about 2?GPa. For the first time the influence of the rf bias power on the whole set of piezoelectric parameters was investigated. It could be shown that the dielectric permittivity, dielectric loss, rocking curve width, effective longitudinal piezoelectric coefficient d _33,f and effective transverse piezoelectric coefficient e _31,f remained unchanged. Further it was observed that piezoelectric AlN films could be deposited at low process temperatures of only 200?°C. Moreover an increase in the e _31,f coefficient with thicker films could be stated. Finally cone formation during wet etching was observed and revealed a formation of {01–12} planes which exhibit a slow etching rate. The c-textured growth of AlN starts directly at the Pt interface.     

Fault-tolerant edge-pancyclicity of locally twisted cubes

The n-dimensional locally twisted cube LTQ_n is a new variant of the hypercube, which possesses some properties superior to the hypercube. This paper investigates the fault-tolerant edge-pancyclicity of LTQ_n, and shows that if LTQ_n (n ? 3) contains at most n − 3 faulty vertices and/or edges then, for any fault-free edge e and any integer ? with 6 ? ? ? 2ⁿ − f_v, there is a fault-free cycle of length ? containing the edge e, where f_v is the number of faulty vertices. The result is optimal in some senses. The proof is based on the recursive structure of LTQ_n.     

Improvement of jitter transfer characteristics of a 9.95328 Gb/s data recovery DLL using saw filter

This paper presents a design of a high-speed data recovery circuit for non return zero (NRZ) data transmission using delay-locked loop (DLL) with SAW filter. The jitter generation of the circuit is decreased by adjusting the loop gain in DLL whereas surface acoustic wave (SAW) filter with low centered frequency (f_c) improves the jitter transfer function of DLL. It is seen that the circuit using SAW filter of f_c = 1.24416 GHz and Q = 1000 provides the cut off frequency of about 600 kHz which is ∼10 times lower than that of conventional DLL circuit.     

On a new class of fuzzy implications: h-Implications and generalizations

A new class of fuzzy implications called the h-implications is introduced. They are implications generated from an additive generator of a representable uninorm in a similar way of Yager’s f- and g-implications which are generated from additive generators of continuous Archimedean t-norms and t-conorms. Basic properties of these implications are studied in detail. Modifications and generalizations of the initial definition are presented and their properties studied and compared between them. One of the modifications, called (h, e)-implications, is another example of a fuzzy implication satisfying the exchange principle but not the law of importation for any t-norm, in fact for any function F : [0, 1]² → [0, 1].     

Effect of MgZnO-bilayer/BA-CH3 combination interlayer on emission characteristics of MoO3/F8BT/ZnO hybrid light emitting diodes fabricated on ZnO/Ag/ZnO transparent cathode

The characteristics of MoO₃/F8BT/ZnO inorganic/organic hybrid light emitting diodes (IO-HyLEDs) fabricated on ZnO/Ag/ZnO dielectric/metal/dielectric (DMD) and conventional ZnO/ITO were investigated. The DMD had a low sheet resistance of 9 Ω/sq and a high transmittance of 90.7%. The device fabricated on DMD showed similar current density–voltage (J–V) and luminance–current density (L–J) characteristics to that on ZnO/ITO, indicating the possibility of DMD as a promising transparent conductive layer for IO-HyLEDs. The maximum luminous intensity of 237,000 cd/m² was demonstrated under pulsed condition for the DMD device. We also investigated the effect of the combination interlayer (CIL) at the F8BT/ZnO interface on the IO-HyLEDs. The CIL was composed of a Mg_0.52Zn_0.48O/Mg_0.25Zn_0.75O bilayer and a self-assembled dipole molecule (SADM) of BA-CH₃. The devices with CIL exhibited an approximately threefold enhancement of the luminous intensity and efficiency in comparison with the devices without CIL. This improvement was considered to be brought about by the enhancement of the electron injection efficiency by CIL.     

Ferroelectric thin film fabrication by direct UV-lithography

Due to their use in the fields of sensors, energy harvesting, capacitors and FeRAMs the fabrication of microstructured ferroelectric thin films is an important research field. Therefore a modified sol–gel process chain has been developed to produce fine patterned ferroelectric PZT (PbZr_0.52Ti_0.48O₃) thin films by direct UV-lithography. A sol based on methacrylic acid was developed to provide a photosensitive metal organic PZT precursor. The sol was used to obtain photosensitive xerogel films by spin-coating, which were patterned using conventional UV-photolithography equipment. After development the patterned xerogel films were pyrolized and crystallized in air via rapid thermal annealing in order to obtain crystalline PZT thin films. The patterned PZT films were investigated by XRD technique and SEM-micrographs. Finely patterned, crack free, crystalline PZT thin films were obtained.     

Asymptotic behavior and blow up of solutions for semilinear parabolic equations at critical energy level

In this paper we study the initial boundary value problem of semilinear parabolic equations with semilinear term f(u). By using the family of potential wells method we prove that if f(u) satisfies some conditions, J(u₀) ≤ d and I(u₀) > 0, then the solution decays to zero exponentially as t → ∞. On the other hand, if J(u₀) ≤ d, I(u₀) < 0, then the solution blows up in finite time.     

Selectivity of flame-spray-made Nb/ZnO thick films towards NO2 gas

Unloaded ZnO and Nb/ZnO nanoparticles containing 0.25, 0.5 and 1 mol.% Nb were produced in a single step by flame-spray pyrolysis (FSP) technique. The nanoparticles were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The BET surface area (SSA_BET) of the nanoparticles was measured by nitrogen adsorption. FSP yielded small Nb particles attached to the surface of the supporting ZnO nanoparticles, indicating a high SSA_BET. The morphology and accurate size of the primary particles were further investigated by TEM. Nb/ZnO nanoparticles paste composed of ethyl cellulose and terpineol as binder and solvent respectively was coated on Al₂O₃ substrate interdigitated with gold electrodes to form thick films by spin coating technique. After the sensing tests, the morphology and the cross-section of sensing film were analyzed by SEM and EDS analyses. The influence on a low dynamic range of Nb concentration on NO₂ response (0.1-4 ppm) of thick film sensor elements was studied at the operating temperatures ranging from 250 to 350 °C in the presence of dry air. The optimum Nb concentration was found be 0.5 mol.% and 0.5 mol.% Nb exhibited an optimum NO₂ response of ∼1640 and a short response time (27 s) for NO₂ concentration of 4 ppm at 300 °C.     

The spanning connectivity of folded hypercubes

A k-container of a graph G is a set of k internally disjoint paths between u and v. A k-container of G is a k∗-container if it contains all vertices of G. A graph G is k∗-connected if there exists a k∗-container between any two distinct vertices, and a bipartite graph G is k∗-laceable if there exists a k∗-container between any two vertices u and v from different partite sets of G for a given k. A k-connected graph (respectively, bipartite graph) G is f-edge fault-tolerant spanning connected (respectively, laceable) if G − F is w∗-connected for any w with 1 ? w ? k − f and for any set F of f faulty edges in G. This paper shows that the folded hypercube FQ_n is f-edge fault-tolerant spanning laceable if n(?3) is odd and f ? n − 1, and f-edge fault-tolerant spanning connected if n (?2) is even and f ? n − 2.     

A parasitic type piezoelectric actuator with an asymmetrical flexure hinge mechanism

A parasitic type actuator with an asymmetrical flexure hinge mechanism has been proposed in this study to achieve linear motion with a large working stroke. The principal output direction of the piezoelectric stack is vertical to the motion direction of the mover to obtain a large output load. The composition of the parasitic type actuator and working process are introduced and parasitic motion is explained. Finite element method has been applied to analyze the parasitic motion of the proposed asymmetrical flexure hinge mechanism. Moreover, an experiment system of the parasitic type actuator is set up, and experiments show that the positioning resolution of the actuator is around 0.1 μm; the maximum motion speed could achieve to 2850 μm/s when the input frequency f = 500 Hz and the input voltage U_e = 100 V; the maximum output force F_g is up to 750 g when the input frequency f = 1 Hz and the input voltage U_e = 100 V. This study indicates that the asymmetrical flexure hinge mechanism could achieve parasitic motion for the design and application of piezoelectric actuators with a large working stroke.

     

Residual stress influences on the sensitivity of ultrasonic sensor having composite membrane structure

Stress and sensitivity of arrayed ultrasonic sensors utilizing piezoelectric thin film (lead–zirconate–titanate film: Pb(Zr_0.52Ti_0.48)O₃) having composite membrane structure are demonstrated. Due to different thermal and elastic characteristics of each constitutive layer, a subsequent residual stress and deflection is generated on the resultant composite membrane. We present the influence of residual stress on the mechanical behaviors and sensitivities of a Si-based integrated sensor device. The design of sensor structure and the fabrication process especially relating to thermal treatment have significant effects on the stress state of the composite membrane, and the relationships among the stress states, deflections of membrane and sensitivities of sensor devices are considered. Tensile stress induced on the membrane consequently leads to sensitivity deterioration, while compressive stress improves sensitivity. Sensitivities of each sensor structure are expressed as the ratio of output voltage (V) to the acoustic pressure (P), and the variations of those are discussed relating to the residual stress states, PZT film properties and mechanical behaviors of each composite membrane.     

Enhanced C2H5OH sensing characteristics of nano-porous In2O3 hollow spheres prepared by sucrose-mediated hydrothermal reaction

In₂O₃ hollow spheres with shell thicknesses of ∼150 nm and ∼300 nm were prepared by the one-pot synthesis of indium-precursor-coated carbon spheres via hydrothermal reaction and subsequent removal of core carbon by heat treatment. The gas response (R_a/R_g, R_a: resistance in air, R_g: resistance in gas) of the thin hollow spheres to 100 ppm C₂H₅OH was 137.2 at 400 °C, which was 1.86 and 3.84 times higher than that of the thick hollow spheres and of the nanopowders prepared by precipitation, respectively. The gas sensing characteristics are discussed in relation to the shell configuration of the hollow spheres. The enhanced gas response of the hollow spheres was attributed to the effective diffusion of analyte gas toward the entire sensor surface via very thin and nano-porous shells.     

DeMorgan systems with an infinitely many negations in the strict monotone operator case

We give a new representation theorem of negation based on the generator function of the strict operator. We study a certain class of strict monotone operators which build the DeMorgan class with infinitely many negations. We show that the necessary and sufficient condition for this operator class is f_c(x)f_d(x) = 1, where f_c(x) and f_d(x) are the generator functions of the strict t-norm and strict t-conorm.     

An acoustic wave sensor for the hydrophilic fluoride

A new acoustic wave sensor to detect and quantify fluoride, one of the most hydrophilic anions, is proposed. Meso-octamethylcalix[4]pyrrole (OMCP) and seven of its derivatives were evaluated as piezoelectric quartz crystal coatings. Some of these sensors experienced appreciable coating leaching under a water flow, while others did show a very small sensitivity to fluoride. As the OMCP-naphthoquinone sensor was very sensitive to fluoride and did not lose a significant amount (α = 0.05) of coating during eight weeks, it was selected among all the others. A piezoelectric crystal coated with an amount of OMCP-naphthoquinone that produced a frequency decrease of 22 kHz showed a linear calibration range that extended up to 80 mg L⁻¹, within which sensitivity to fluoride was 0.45 Hz L mg⁻¹_, and was able to detect fluoride at the concentration of 3.66 mg L⁻¹. This sensor was used to determine fluoride in commercial fluoride tablets, and the result found was not statistically different (α = 0.05) from the value provided by the manufacturer.