Nanoparticles and polarons: active centers in thin film sensor devices

The spectroscopic characterization of localized charges in thin film devices is addressed. We demonstrate their existence and show their particular contribution to the operation of sensor devices. Examples in oxidic and polymeric thin films systems are given in which the localized states dominate the electronic properties.     

Thin‐film transistor mobility limits considerations

The mobility limiting scattering mechanisms for amorphous semiconductors and polar polycrystalline semiconductors are studied in the context of developing new high‐performance thin‐film transistor (TFT) channel layer materials for large‐area electronics. A physics‐based model for carrier transport in an amorphous semiconductor is developed to estimate the mobility limits of amorphous semiconductor TFTs. The model involves band tail state trapping of a diffusive mobility. Simulation reveals a strong dependence on the band tail density of states. This consideration makes it difficult to realize a high‐performance p‐type oxide TFT. A polar crystalline semiconductor may offer a higher mobility but is fundamentally limited by polar optical phonon scattering. Any crystalline TFT channel layer for practical large‐area applications will not be a single crystal but polycrystalline, and therefore, grain size and grain boundary‐dependent scattering will further degrade the transport properties.     

薄膜热电偶温度传感器研究进展

随着低维材料技术的发展和对测温要求的提高,薄膜热电偶温度传感器应运而生,其快速响应特性为测量瞬变温度提供了可能。综述了薄膜热电偶温度传感器国内外发展现状,着重介绍了薄膜临界厚度的确定、扩散现象的影响、制备工艺等关键技术,并对其未来发展做出了展望。     

Polypyrrole thin film fiber optic chemical sensor for detection of VOCs

A fiber optic reflectance sensor (FORS) using Polypyrrole (PPy) conducting polymer to detect volatile organic compounds (VOCs) is demonstrated. The conventional interfacial polymerization method is used to synthesize a sensitive polypyrrole membrane, which shows relatively low roughness and high reflectivity. In general the changes in electrical properties of conductive polymers are explored in sensing applications, however their optical properties have been less explored. In the present study, we evaluate the optical properties of PPy and transfer on the end face of polymer optical fiber (POF) for the detection of VOCs. The change in the reflected optical signal from PPy upon interaction with the VOCs is systematically evaluated. The fabricated PPy FORS shows the excellent sensitivity to the VOCs under test with the detection limit up to 1 ppm.     

ZnO压电薄膜声传感器的有限元分析

阐述了ZnO压电薄膜声传感器的结构和工作原理,并用ANSYS 9.0对压电薄膜声传感器进行了静态分析、模态分析和谐响应分析。通过静态分析,得到压电薄膜声传感器的灵敏度为16.4 mV/Pa;模态分析得出了传感器的第一阶固有频率为12.379 kHz;谐响应分析则获得感应电压与动态外力频率之间的关系。这些分析为此类声传感器的设计提供了理论依据。     

Ionic current rectification in a conical nanofluidic field effect transistor

A conical nanofluidic field effect transistor (FET) refers to a conical nanopore embedded with an electrically controllable gate electrode. The surface potential of the nanopore can be effectively regulated by manipulating the gate potential applied to the gate electrode, which in turn controls the ionic current through the nanopore. The field effect on the ionic current rectification (ICR) in the conical nanofluidic FET is comprehensively investigated using a continuum model, composed of Nernst-Planck equations for the ionic concentrations, Poisson equation for the electric potential, and Navier-Stokes equations for the flow field. Under the conditions of a low ionic concentration, a low surface charge density of the nanopore, and a high permittivity of the dielectric nanopore, regulation of ICR by FET is significant. The field effect on the ICR with the gate electrode located in the middle region is opposite to that with the gate electrode located near the tip of the nanopore.     

An electrostatic discharge model for thin‐film transistor fabrication

Electrostatic discharge (ESD) is a significant cause of yield loss in thin‐film transistor (TFT) array manufacturing. TFT arrays are at increased risk relative to other electronic components because the TFTs are unprotected; the array has a large inherent capacitance, and TFT processing includes many chucking and conveyance steps that result in triboelectric charge generation. To reduce or eliminate ESD‐caused fallout, an understanding must be gained of an ESD event's fundamental physics, including the mechanism of charge generation, ESD event physics, and TFT failure modes. An equivalent circuit model has been developed to address the physics of how ESD events occur. The ESD event scenarios modeled with this circuit are as follows: (1) the substrate glass is lifted from the chuck, resulting in a non‐uniform static charge; (2) this charge induces a voltage on the A‐side components; (3) the substrate is lifted, causing a voltage increases; (4) the uneven charge generated results in voltage gradients between TFTs, resulting in an ESD event. This model combines the effects of TFT substrate lifting and charge generation, with a simplified equivalent circuit representing the TFT array. The behavior of this circuit was simulated with a spice model (Electronics Research Laboratory of the University of California, Berkeley, CA, USA.) to characterize the ESD pulse.     

Analysis of configuration of surface-immobilized proteins by Si nanochannel field effect transistor biosensor

We demonstrate the application of ‘top-down’ fabricated Si nanochannel field effect transistor biosensors for measuring charging properties or configuration of proteins immobilized on the Si surface. We have immobilized monoclonal antibodies for prostate specific antigen (anti-PSA) on the p-type Si channel surface, and monitored the channel conductance in response to the variation of ionic strength (salt concentration) and pH of the buffer solution. Effects of the salt concentration at a constant pH is consistent with the screening of protein charges by dissolved counter-ions, enabling analysis of the net protein charge and spatial configuration based on calculated values of Debye screening length (λ_D). The pH-dependence of channel conductance at varying salt concentration has also been investigated, from which the relationship between the pH and net protein charge can be estimated.     

A course on thin‐film transistor circuit design for modern displays

A new subject‐specific course on thin‐film transistor (TFT) circuit design is introduced, covering related knowledge of display technologies, TFT device physics, processing, characterization, modeling and circuit design. A design project is required for students to deepen the understanding even more and get hands‐on design experience. This course can be an intense 1‐week course to offer a full training of design engineers in an organized way to meet the ever‐increasing needs in display industry for TFT circuit design specialists. It can also be organized in one semester for electrical engineering Master's and Ph.D. students.     

A new dynamic hydrogen reference electrode for applications in thin-film sensor systems

The realization and applicability of a new dynamic hydrogen reference electrode (DHRE) within an electrochemical microcell for sensor applications is reported. The electrodes are fabricated in thin-film technology and fixed within a flow-through device. An experimental setup for accurate electrochemical potential measurements is described. Smooth platinum, platinized platinum and pHEMA coated electrodes are investigated with regard to their initialization behavior, stability, reproducibility and interference with electrolytes. It is found that platinized platinum DHREs show excellent stability and reproducibility. For uncoated electrodes, the electrochemical potential is established within seconds. The potential is independent of the pH value within the range of pH 4–10. Interference with sulfate and phosphate is observed. Thus, the platinized platinum DHRE is well suited for bioanalytical sensor applications, where the pH value is buffered and the concentrations of the disturbing anions are constant or very low.     

A differential capacitive thin film hydrogen sensor

A compact, differential, hydrogen-specific sensor based on the lattice expansion of LaAl_0.3Ni_4.7 metal hydride thin films has been fabricated and characterized. Characterization of LaAl_0.3Ni_4.7 films performed using a capacitance dilatometer revealed that the lattice expansion was proportional to the partial pressure of H₂ over the range 0.01–1.3 atm used in this experiment. The films were mechanically robust to cycling between vacuum and partial pressures of H₂ up to 1.3 atm and were not poisoned by exposure to atmosphere's containing up to 24% carbon monoxide. A wafer level process has been established for the fabrication of the differential hydrogen sensor which includes both an active LaAl_0.3Ni_4.7 sensing capacitor and an inert Au reference capacitor. A minimum sensitivity of 400 ppm hydrogen is calculated for the differential device.     

电容式薄膜真空压力传感器设计

为了满足在工程型号上的使用要求,解决真空压力传感器敏感探头壳体与传感器壳体隔离绝缘问题;传感器输出信号非线性的补偿问题;传感器热零点漂移的全电路的温度补偿问题,采用电容式薄膜封装结构,壳体为电容的另一极,在0.1~100 Pa的范围内进行了校准测试,实现了传感器0.2%FS的测量精度.     

On the determination of the steady film profile for a non-Newtonian thin droplet

A shooting method is used to determine a solution to a third-order ODE modeling the steady profile of a non-Newtonian thin droplet. We compare a direct approach to an iterative approach using a secant method. We obtain a nonlinear relationship between the contact angle ? and the position of the contact line r. From this nonlinear relationship we use curve fitting to obtain an empirical law of the form tan?∝r^f(k) where k is the power law coefficient and f is a nonlinear function of k.     

用于薄液膜检测的同轴环盘电导传感器优化设计

液膜厚度是研究环状流液膜演化发展的重要参数,基于环状流薄液膜厚度范围,设计了基于电导法的非侵入式同轴环盘液膜测量传感器。通过有限元分析,对同轴环盘液膜测量传感器电极结构参数进行了优化设计,确定了传感器结构参数最优选择。实验表明：传感器在50μm~200μm的液膜厚度范围内具有很高的灵敏度,液膜厚度的测量误差在±3.7％以内。     

Parallelization strategies for Monte Carlo simulations of thin film deposition

Atomistic simulations of thin film deposition, based on the lattice Monte Carlo method, provide insights into the microstructure evolution at the atomic level. However, large-scale atomistic simulation is limited on a single computer—due to memory and speed constraints. Parallel computation, although promising in memory and speed, has not been widely applied in these simulations because of the intimidating overhead. The key issue in achieving optimal performance is, therefore, to reduce communication overhead among processors. In this paper, we propose a new parallel algorithm for the simulation of large-scale thin film deposition incorporating two optimization strategies: (1) domain decomposition with sub-domain overlapping and (2) asynchronous communication. This algorithm was implemented both on message-passing-processor systems (MPP) and on cluster computers. We found that both architectures are suitable for parallel Monte Carlo simulation of thin film deposition in either a distributed memory mode or a shared memory mode with message-passing libraries.     

Hydrogen sensors: Role of palladium thin film morphology

The effect of thin film morphology, carbon monoxide (CO) and resistor geometry on the response of hydrogen sensitive thin film palladium resistors has been investigated. Films with two different morphologies were fabricated by DC magnetron sputtering under different gas pressures. Palladium thin film morphology was found to strongly influence sensor response in terms of hydrogen sensitivity and rate of response. In dense columnar Pd films, CO dramatically increases the time-lag in sensor response to H₂ in H₂/CO mixtures. However, the steady state value of the response remains unchanged. Films with a void filled columnar morphology exhibited shorter time-lag in response to H₂ in presence of CO.     

高温薄膜传感器制备与性能研究

利用微机电系统（MEMS）工艺在 Al2 O3基片上制备了 Pt—PtRh 薄膜热电偶,其工作温度最高可达到1300℃,最大输出电势达14.8 mV。薄膜热电偶的电势—温度曲线与标准热电偶的曲线基本重合,同时研究了不同粘结层对薄膜微结构、器件寿命的影响。实验结果表明：以 Ta 为粘结层时薄膜传感器的寿命最长,在1300℃下可达到14 h。     

Analyte selective response in solution-deposited tetrabenzoporphyrin thin-film field-effect transistor sensors

Organic thin film transistor (OTFT) chemical sensors rely on the specific electronic structure of the organic semiconductor (OSC) film for determining sensor stability and response to analytes. The delocalized electronic structure is influenced not only by the OSC molecular structure, but also the solid state packing and film morphology. Phthalocyanine (H₂Pc) and tetrabenzoporphyrin (H₂TBP) have similar molecular structures but different film microstructures when H₂Pc is vacuum deposited and H₂TBP is solution deposited. The difference in electronic structures is evidenced by the different mobilities of H₂TBP and H₂Pc OTFTs. H₂Pc has a maximum mobility of 8.6 × 10⁻⁴ cm² V⁻¹ s⁻¹ when the substrate is held at 250 °C during deposition and a mobility of 4.8 × 10⁻⁵ cm² V⁻¹ s⁻¹ when the substrate is held at 25 °C during deposition. Solution deposited H₂TBP films have a mobility of 5.3 × 10⁻³ cm² V⁻¹ s⁻¹, which is consistent with better long-range order and intermolecular coupling within the H₂TBP films compared to the H₂Pc films. Solution deposited H₂TBP also exhibits a textured film morphology with large grains and an RMS roughness 3-5 times larger than H₂Pc films with similar thicknesses. Despite these differences, OTFT sensors fabricated from H₂TBP and H₂Pc exhibit nearly identical analyte sensitivity and analyte response kinetics. The results suggest that while the interactions between molecules in the solid state determine conductivity, localized interactions between the analyte and the molecular binding site dominate analyte binding and determine sensor response.     

Fluid flow and heat transfer in the evaporating thin film region

The evaporating thin film region is an extended meniscus beyond the apparent contact line at a liquid/solid interface. Thin film evaporation plays a key role in a highly efficient heat pipe. A detailed mathematical model predicting fluid flow and heat transfer through the thin film region is developed. The model considers the effects of inertial force, disjoining pressure, surface tension, and curvature. Utilizing the order analysis, the model is simplified and can be numerically solved for the thin film profile, interfacial temperature, meniscus radius, heat flux distribution, velocity distribution, and mass flow rate in the evaporating thin film region. The prediction shows that while the inertial force can affect the thin film profile, interfacial temperature, meniscus radius, heat flux distribution, velocity distribution, and mass flow rate, in particular, near the non-evaporating region, the effect can be neglected. It is found that a maximum velocity, a maximum heat flux, and a maximum curvature exist for a given superheat, but the locations for these maximum values are different.     

Application of steel thin film electrical resistance sensor for in situ corrosion monitoring

The corrosion sensor should have high sensitivity enough to measure the corrosion rate in mild corrosive environments and the ability to detect the corrosion mechanism. Therefore, our goal is to develop and apply a steel thin film electrical resistance (TFER) sensor based on the measurement of changes in electrical resistance of the sensing elements in order to follow the corrosion of steel in a wide range of environments. The sensor with a thickness of 600 nm is fabricated by DC magnetron sputter deposition of steel on an Al₂O₃ substrate, followed by silk screen printing to improve the sensitivity of the sensor, especially to measure the corrosion rate in low corrosive environments such as anoxic corrosion in neutral solutions, steel protected by protective measures like a corrosion inhibitor or cathodic protection, and atmospheric corrosion. The sensor also has multiple-line sensing elements to detect the localized corrosion of steel. The TFER sensor is laboratory and field tested. All the studies demonstrate that the newly developed TFER sensor can be a promising and reliable tool for corrosion monitoring of steel exposed to various environments.