磁控共溅射Al-Cu-Fe薄膜表面形貌分析

利用磁控共溅射方法采用不同的溅射工艺在单晶硅基片沉积制备了Al-Cu-Fe薄膜.运用原子力显微镜镜(AFM)分析了Al-Cu-Fe薄膜的表面形貌、表面粗糙度和晶粒尺寸.结果表明:随着溅射气压的减小,薄膜表面粗糙度和晶粒尺寸均有所减小.当基底温度升高至450℃时,Al-Cu-Fe薄膜的粗糙度和晶粒尺寸明显增加.溅射时间的延长导致了薄膜的表面粗糙度下降和晶粒尺寸的长大.增加溅射功率会使薄膜表面粗糙度有所增加.     

磁控共溅射Al-Cu-Fe薄膜表面形貌分析EI

利用磁控共溅射方法采用不同的溅射工艺在单晶硅基片沉积制备了Al-Cu-Fe薄膜.运用原子力显微镜镜(AFM)分析了Al-Cu-Fe薄膜的表面形貌、表面粗糙度和晶粒尺寸.结果表明:随着溅射气压的减小,薄膜表面粗糙度和晶粒尺寸均有所减小.当基底温度升高至450℃时,Al-Cu-Fe薄膜的粗糙度和晶粒尺寸明显增加.溅射时间的延长导致了薄膜的表面粗糙度下降和晶粒尺寸的长大.增加溅射功率会使薄膜表面粗糙度有所增加.     

Ni3Al薄膜涂层的制备与性能研究

利用PLD法制备的淀积态的Ni-Al薄膜经1073K/3600s(Ar气中)热处理后,可以获得以Ni3Al为基的Ni3Al/Ni复相薄膜涂层.这种复相涂层无论是强度(硬度)还是耐蚀性与未涂层的Ni相比,都有显著的提高.     

Ni3Al薄膜涂层的制备与性能研究

利用ＰＬＤ法制备的淀积态的Ｎｉ－Ａｌ薄膜经１０７３Ｋ／３６００ｓ（Ａｒ气中）热处理后,可以获得以Ｎｉ３Ａｌ为基的Ｎｉ３Ａｌ／Ｎｉ复相薄膜涂层。这种复相涂层无论是强度（硬度）还是耐蚀性与未涂层的Ｎｉ相比,都有显著的提高。     

Al基上偏压磁控溅射Cu薄膜的工艺研究

利用磁控溅射方法,通过对衬底施加负偏压吸引等离子体中的阳离子对衬底进行轰击,在Al箔上制备Cu薄膜.采用强力胶带试验及数字式微欧计考察了负偏压对薄膜附着力和方块电阻的影响,以及Cu薄膜的氧化规律.结果表明,样品的附着力随负偏压的增大先急剧增加,后又下降,负偏压为200 V时附着力最强,为76 N;方块电阻则随负偏压的增大先下降,在200 V达到最小值1.575 Ω/□,而后又增大;Cu薄膜的氧化反应完成的时间与Cu膜厚度基本呈线性规律.     

金属间化合物Ni3Al基合金结构焊工研究

对Ｎｉ３Ａｌ基合金结构焊接的工艺进行了研究，对焊缝显微组织及性能进行了分析，结果表明：采用合理的焊接工艺参数，用Ｎｉ８１８焊条能够实现Ｎｉ３Ａｌ工个的结构焊接。     

离子束辅助沉积Al2O3薄膜的微观状态及其物理特性研究

本文利用透射电子显微镜、原子力显微镜、X光电子能谱等微观分析手段 ,系统研究了氧离子束辅助离子束沉积方法制备的Al2 O3 薄膜的化学成分、微观结构、表面形貌及其随退火温度的变化 ,并对Al2 O3 薄膜折射率、显微硬度和膜基结合强度等物理特性及其随沉积温度的变化进行了详细研究。研究发现 :用离子束辅助沉积制备的薄膜基本满足Al2 O3 的标准成分配比 ;在沉积温度低于 5 0 0℃制备的Al2 O3 薄膜以非晶Al2 O3 相a Al2 O3 为主 ;Al2 O3 薄膜的表面粗糙度、折射率、显微硬度随沉积温度的增加而增加 ;当沉积温度高于 2 0 0℃时 ,薄膜与基体间的膜基结合强度将随沉积温度的增加而下降。分析表明 :薄膜表面形貌与晶体内部的结构相变有关 ,薄膜的退火相变途径为a Al2 O380 0℃ γ Al2 O310 0 0℃ γ Al2 O3 +α Al2 O312 0 0℃ α Al2 O3 。     

Al—MgF2金属陶瓷薄膜的微观结构与光学特征

本文首次报道了用真空蒸发制备的Ａｌ－ＭｇＦ２金属陶瓷薄膜微观结构与光学特征。     

凝固速度对Ni/Ni3Al基高温合金组织演变及相变行为的影响

Ni/Ni3Al基高温合金因其优异的高温强度、抗氧化性能和抗蠕变能力等优点,被广泛应用于航空航天等领域.简要介绍了凝固速度对Ni/Ni3Al基高温合金中γ′,β相以及碳化物等析出相的组织演变及相变行为的影响,为Ni/Ni3Al基高温合金非平衡凝固的研究开发及组织调控提供借鉴和指导.Ni/Ni3Al基高温合金中γ′,β ...     

金属间化合物Ni3Al薄膜的制备及性能研究

采用直流磁控共溅射法,在衬底温度为450℃的SiO2基体上制备了厚度为500nm的Ni3Al薄膜,X射线衍射(XRD)和透射电子显微镜(TEM)等测试表明,薄膜为(111)取向的L12型晶体结构金属间化合物。采用纳米压痕方法测试了薄膜的力学性能,其硬度为8.00GPa,弹性模量为200GPa。为克服亚微米级薄膜氧化增重难以测量的困难,采用四探针测试金属薄膜电阻的方法,间接给出了薄膜的腐蚀性能和高温氧化程度。结果表明Ni3Al金属间化合物薄膜的氧化速率为2.28×10-13g2/(cm4.s),薄膜具有良好的高温抗氧化性能。     

直流磁控溅射铝纳米颗粒膜的微结构及电学特性

采用直流磁控溅射法,以高纯铝(99.99%)为靶材,高纯氩气(99.999%)为起辉气体,在经机械抛光的单晶Si衬底上制备铝纳米颗粒薄膜。利用X射线衍射仪(XRD)、光学薄膜测厚仪、扫描电子显微镜(SEM)和四探针测试仪分别测试了铝纳米颗粒薄膜的晶相结构、薄膜厚度、表面形貌及电阻率。XRD衍射图谱表明此薄膜为面心立方的多晶结构,择优取向为Al(111)晶面。随溅射功率由30 W增至300 W,铝纳米颗粒薄膜的沉积速率由3.03 nm/min增加至20.03 nm/min;而随溅射压强由1 Pa增加至3 Pa,沉积速率由2.95 nm/min降低到1.66 nm/min。在溅射功率为150 W,溅射压强为1.0 Pa条件下制备的样品具有良好的晶粒分布。随溅射功率从80 W增大到160 W,样品电阻率由4.0×10-7Ω·m逐渐减小到1.9×10-7Ω·m;而随溅射压强从1 Pa增至3 Pa,样品电阻率由1.9×10-7Ω·m增加到7.1×10-7Ω·m。     

射频磁控溅射制备Mn掺杂ZnO薄膜的结构与光学性能

采用反应射频磁控溅射方法制备Zn1-xMnxO薄膜(0≤x≤0.25),并在不同温度下进行退火处理.通过原子力显微镜、薄膜X射线衍射、透射电子显微镜和透射光谱对薄膜的成分、表面形貌、微结构和光学性质进行了研究.结果表明,薄膜结晶质量明显地依赖于掺杂Mn元素的浓度,所有薄膜都表现了沿(002)晶面方向择优取向生长,当Mn...     

磁控溅射制备ITO薄膜光电性能的研究

采用直流磁控溅射方法在玻璃基底上制备了ITO薄膜.分别用分光光度计和四探针仪测试了所制备ITO薄膜在可见光区域内的透过率和电阻率,研究了溅射气压、氧氩流量比和溅射功率三个工艺参数对ITO薄膜光电性能的影响.研究结果表明,制备ITO薄膜的最佳工艺参数为:溅射气压0.6 Pa,氧氩流量比1:40,溅射功率108 W.采用此工艺参数制备的ITO薄膜在可见光区平均透过率为81.18％,薄膜电阻率为8.9197×10-3Ω·cm.     

直流磁控溅射制备铝薄膜的工艺研究

采用直流磁控溅射方法，以高纯Al为靶材，高纯Ar为溅射气体，在玻璃衬底上成功地制备了铝薄膜，并对铝膜的沉积速率、结构和表面形貌进行了研究。结果表明：A1膜的沉积速率随着溅射功率的增大先几乎呈线性增大而后缓慢增大；随着溅射气压的增加，沉积速率先增大，在一定气压时达到峰值后继续随气压的增大而减小。X射线衍射图谱表明Al膜结构为多晶态；用扫描电子显微镜对薄膜进行表面形貌的观察，溅射功率为2600W，溅射气压为0．4Pa时制备的Al膜较均匀致密。     

磁控溅射制备镍薄膜热阻温度传感器工艺研究

利用镍薄膜的温度电阻特性以及磁控溅射镀膜技术设计并制备了薄膜热阻型温度传感器，为了达到较好的工作稳定性，设计了多层的复合膜系。文中分析了沉积薄膜的工作压力、电源功率、靶基距、退火温度、退火时间等制备工艺参数对热阻薄膜特性的影响，以及工艺参数对所沉积的镍薄膜的膜厚均匀度和温度电阻曲线，温度电阻系数等传感特性的影响。通过调整实验的工艺参数，最终得到电阻温度性能较好的镍薄膜温度传感器。测试结果表明薄膜传感器在0-250℃之间温度电阻曲线有较好的线性度和稳定性。     

Surface morphology and optical properties of magnetron - sputtered ultrathin Al films

Ultrathin Al films with different thicknesses were deposited on glass substrates by DC magnetron sputtering. The effects of film thickness on morphology and optical properties of the films were investigated in detail. When film thickness increases from 7.0 to 84.0 nm, the average grain size and surface roughness enlarges from 27.6 to 94.2 nm and from 0.25 to 1.87 nm, respectively. Below critical thickness of 28.0 nm, which is the thickness that Al films form continuous film, the optical properties vary significantly with thickness increasing and then tend to be stable. In the absorptance spectra, all films exhibit distinct broad peaks which can be attributed to the absorption due to the interband transition. The possible reasons for the shift in the peak position are due to the quantum size effects and internal stress in the ultrathin Al films.     

Hydrophilic properties of nano-TiO2 thin films deposited by RF magnetron sputtering

Microstructure and hydrophilicity of nano-titanium dioxide (TiO₂) thin films, deposited by radio frequency magnetron sputtering, annealed at different temperatures, were studied by field emission scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and water contact angle methods. It is found that the crystal phase transforms from amorphous to rutile structure with increase of annealing temperature from room temperature to 800 °C. It is also indicated that the organic contaminants on the surface of the films can be removed and the oxygen vacancies can be reduced by the annealing treatment. Annealed at the temperature below 300 °C, amorphous TiO₂ thin films show rather poor hydrophilicity, and annealed at the temperature range from 400 to 650 °C, the super hydrophilicity anatase of TiO₂ thin films can be observed. However, when the annealing temperature reaches 800 °C, the hydrophilicity of the films declines mainly derived from the appearance of rutile.     

Sputter deposited nanocrystalline Ni-25Al alloy thin films and Ni/Ni3Al multilayers

Thin films of nominal composition Ni-25at%Al have been sputter deposited from a target of the intermetallic compound Ni₃Al at different substrate deposition temperatures. The film deposited on an unheated substrate exhibited a strongly textured columnar growth morphology and consisted of a mixture of metastable phases. Nanoindentation studies carried out on this film exhibited a strong strain hardening tendency. In contrast, the film deposited at 200 °C exhibited a recrystallized non-textured microstructure consisting of grains of a partially ordered Ni₃Al phase. At higher deposition temperatures (∼400 °C), larger grains of the bulk equilibrium, long-range ordered, Ll₂ Ni₃Al phase were observed in the film. Unlike the film deposited on an unheated substrate, the films deposited at elevated temperatures did not exhibit any dependence of the hardness on the indentation depth and, consequently no strain hardening. The average hardness of the film deposited at 200 °C was higher than the one deposited at 400 °C. In addition to monolithic Ni-25Al thin films, multilayered Ni/Ni3Al thin films were also deposited. Multilayers deposited non-epitaxially on unheated substrates exhibited a strong {111} fiber texture while those deposited epitaxially on (001) NaCl exhibited a {001} texture. Free-standing multilayers of both types of preferred orientations as well as of different layer thicknesses were deformed in tension untill fracture. Interestingly, the {111} oriented multilayers failed primarily by a brittle fracture while the {001} multilayers exhibited features of ductile fracture.     

溅射工艺对LaNiO3薄膜结构和电性能的影响

采用射频磁控溅射法在Si(100)衬底上制备了LaNiO3薄膜.通过后续热处理使薄膜晶化,并用四探针法测量了薄膜的表面电阻率.借助X射线衍射分析、电感耦合等离子体发射光谱、原子力显微镜等手段研究了溅射工艺及热处理温度对薄膜显微结构的影响.实验结果表明,在氧气氛保护下,于550℃处理1h,薄膜晶化.溅射氧分压在10%～25%之间,700℃热处理时可以得到表面光滑致密且电性能较好的薄膜.