国际薄膜大会Thin Films 2016 新加坡2016.07.12-15

<正>薄膜领域最具影响力的国际会议"Thin Films 2016"将于2016年7月12号-15号在新加坡召开。此次国际会议是国际薄膜学会主办的薄膜及涂层领域的又一次盛会。"Thin Films 2016"国际会议是国际薄膜学会系列会议的第8届,大会主席为国际薄膜学会理事长、国际薄膜领域的著名学者新加坡南洋理工     

国际薄膜大会Thin Films 2016 新加坡2016.07.12-15

<正>薄膜领域最具影响力的国际会议"Thin Films 2016"将于2016年7月12号-15号在新加坡召开。此次国际会议是国际薄膜学会主办的薄膜及涂层领域的又一次盛会。"Thin Films 2016"国际会议是国际薄膜学会系列会议的第8届,大会主席为国际薄膜学会理事长、国际薄膜领域的著名学者新加坡南洋理工大学的Sam Zhang教授。此次会议的主题涵盖了薄膜领域的前沿和热点问题,包括:工业应用涂层、生物     

国际薄膜大会Thin Films 2016

<正>新加坡2016.07.12-15薄膜领域最具影响力的国际会议"Thin Films 2016"将于2016年7月12号-15号在新加坡召开。此次国际会议是国际薄膜学会主办的薄膜及涂层领域的又一次盛会。"Thin Films 2016"国际会议是国际薄膜学会系列会议的第8届,大会主席为国际薄膜学会理事长、国际薄膜领域的著名学者新加坡南洋理工大学的Sam Zhang教授。此次会议的主题涵盖了薄膜领域的前沿和热点问题,包括:工业应用涂层、生物     

国际材联-亚洲材料大会2016暨中国材料大会2016（英文）

正October 20~24,2016,Qingdao,China Web:http://www.c-mrs.org.cn/iumrs-ica 2016Organized by:Chinese Materials Research Society(C-MRS)International Union of Materials Research Societies(IUMRS)Qingdao Science and Technology Association Co-organized by Materials Research Society-Taiwan(MRS-T)Supported by:Ministry of Science and Technology of China     

Electrical and Optical Properties of GaSe Thin Films

The structure, electrical transport, and optical properties of GaSe films fabricated by means of radio-frequency (RF) magnetron sputtering in Ar were investigated. The as-sputtered GaSe films were amorphous, and their optical energy gap Eg are 1.9～2.6 eV. The effect of the synthesis conditions on the optical and electrical properties of the GaSe films has also been studied     

Sensitivity to Combustible Gas for ZnO Thin Films

A fine polycrystalline ZnO thin film with 0.3～0.6 μm grain size was obtained by sol-gel process and a consequential heat treatment at 500℃. The process of preparing ZnO thin film was analysed. The sensitivity and conductivity of ZnO thin films as combustible gas (CO, CH4,H2) sensor as well as the influence of catalyst and pH value of the precursor on its sensitivity were studied in detail. The structure characteristics of ZnO thin film by different process were irlvestigated by X-ray diffraction, thermal analysis and photoelectron spectrometer. The atomic ratio of Zn to O on the surface of ZnO thin film was found to be 1.14:1 measured from XPS result. The conductivity of the thin film increases greatly when doped with Al3+ ion but decreases while doped with Na+ ion     

Thermal Oxidation of Thin Cu–Ti Films

Thin Cu–Ti films are grown on single-crystal silicon substrates by magnetron sputtering, and their oxidation is studied between 420 and 670 K. A technique is proposed for producing Cu–Ti films of controlled composition using a composite target. The phase composition of the films oxidized in oxygen at atmospheric pressure is determined, and their microstructure is studied by scanning electron microscopy. The films are found to contain the intermetallic compounds Cu₃Ti and CuTi₂, which form during both magnetron sputtering and subsequent oxidation.     

Recent Progress in Thin 3He–4He Films

We review recent work on the properties of ³He–⁴He thin film mixtures. The subject is introduced by reviewing the contributions made by Gasparini and co-workers. In the first part of this survey, we examine a microscopic calculation of the effects that an adsorbed ³He component has on the collective excitations associated with a ⁴He film, third sound. The work in question computes the change in the third sound velocity due to adding ³He, and we can compare this with existing experiment. For small ³He coverage, the change in the third sound speed depends on the derivatives of the species chemical potentials with respect to the areal density. The microscopic calculation shows oscillations in the third sound speed that reflect the layered structure of the film. In the second part of this survey, we concentrate on the ³He component. An important impact of the ⁴He environment is to change the bare mass in the limit of zero ³He concentration to a hydrodynamic mass. Quasiparticle interactions are introduced through the Landau parameters. Our Landau parameters are determined by fitting s-wave and p-wave T-matrix components using experimental results for the effective mass and the spin susceptibility. We can then predict the thermodynamic behavior of the mixture films at finite polarization, and in addition we can predict the spectrum of zero-sound excitations at all polarizations.     

Characterization of C-N Thin Films Prepared by Ion Beam Sputtering

C-N thin films have been prepared by ion beam sputtering using pure N2 as discharge gas. The ratio N/C of the films measured by Auger spectrum is 20% on an average. The results of X-ray diffraction and transmission electron microscopy show that β-C3N4 phase exists in the films. Xray photoelectron spectroscopy shows that nitrogen is mostly combined with carbon with triple (C=N) and double (C=N) bonds. The IR absorption shows an absorption bond near 2185 cm-1assigned to the C=N, no trace of C-C bond was observed     

Thermal Oxidation of Thin Films of Fe–Ni Solid Solutions

The oxidation kinetics of thin films of dilute Fe–Ni solid solutions (0.17, 0.54, 0.65, 0.91, and 1.87 at % Ni) on single-crystal Si substrates are studied. The oxidation rate of the films is found to decrease with increasing Ni concentration. The predominant phase in all of the oxide layers is Fe₂O₃, independent of the oxidation conditions. It is shown that, at an Ni content of about 1 at %, the composition dependences of the oxide thickness, refractive index, extinction coefficient, and apparent activation energy for oxidation show extrema. The mechanism of film oxidation is discussed.     

Stress in Thin Films;Diffraction Elastic Constants and Grain Interaction

Untextured bulk polycrystals usually possess macroscopically isotropic elastic properties whereas for most thin films transvers isotropy is expected,owing to the limited dimenionlity .The usually applied models for the calculation of elstic constants of polycrystals from single crystal elastic contants(so-called grain interaction models)erroneously predict macroscopic isotropy for an(untextured) thin film.This paper presents a summary of recent work where it has been demonstrated for the first time by X-ray diffraction analysis of stresses in thin films that elastic grain interaction can lead to macroscopically anisotropic behaviour (shown by non-linear sin^2φ plots).A new grain interaction model,predictin the macroscopically anisotropic behaviour of thin films,is proposed.     

Solid-State Reactions in CdS–Bi2S3 Thin Films

Structural, electrical, and optical data are used to elucidate the mechanisms of solid-state reactions in thin CdS–Bi₂S₃ films prepared by spray pyrolysis. The results indicate the formation of substitutional solid solutions and a chemical compound and intercalation of Cd between layers of Bi₂S₃.     

Influence of Experimental Parameters on Reactive Magnetron Sputtering CN_x Thin Films

Carbon nitride thin films were deposited on Si(001) using unbalanced magnetron sputtering at different experimental parameters. The effects of nitrogen partial pressure, substrate temperature and substrate bias on the deposition rate and nitrogen content are discussed.     

Magnetic Properties of Nanometer-Scale NiZnCu Ferrite Thin Films Fabricated by Spray-Spin-Heating-Coating Method

A new nanometer-scale ferrite thin film with excellent high-frequency characteristics has been developed by the spray-spin-heating-coating method. The effects of the ion synthesis mechanism, chemical stoichiometry, fabrication method, and doping content on the magnetic properties and microstructure of the thin films have been analyzed. The films formed between 75℃ and 90℃ by spray-spin-heating-coating methods was discovered with fine grain size of about 21 nm, high saturation magnetization (4πMs) of about 6.5 kGs, coercivity of about 9.8 Oe, as well as initial permeability of about 14.0. These films can be widely used in radio-frequency integrated circuit devices.     

Evaporated Thin Films of CdS and CdTe: Optimization for Photovoltaic Applications

Thin films of cadmium sulphide and cadmium telluride have been prepared by thermal evaporation under various conditions of deposition. These films have been characterized optically. electrically and for structure determination. The results of these characterizations along with the initial results of all thin film CdS/CdTe solar cells are presented in this paper     

“Thermal Prism” Method for Measuring Thermophysical Properties of Thin Films

Theoretical principles underlying the photothermal method for measuring the thickness and thermal properties of a thin film located between two optical elements (“sandwich”) are analyzed. The method is based on the irradiation of the assembly by repetitive pulse laser radiation. Radiation is absorbed in the film and causes heating of the optical elements by heat conduction. The element is monitored by a narrow beam of a second low-power laser propagating through the heated region. The beam is deflected due to the spatial variation of the refractive index, and the magnitude of the deflection angle as a function of time contains the relaxation and “wave” components. It is shown that the phase of the “wave” component depends on the thickness and thermophysical properties of the film. The thermophysical properties of the film can be determined, provided that the analogous properties of the optical element are measured previously or otherwise known, by comparing experimentally measured values of the phase shift with theoretical values obtained from the analytical solution of the non-stationary two-dimensional heat conduction equation.     

Infrared Reflectivity Spectra of Manganite Thin Films Grown on Different Substrates

We have measured the reflectivity infrared (IR) spectra of R_1−x Ca _x MnO₃ (R = La, Pr) manganite thin films grown on different substrates (SrTiO₃ (STO), LaAlO₃ (LAO) and SrLaGaO₄ (SLGO)) manganites over a wide frequency (50–5000 cm⁻¹) range. In the Far IR (FIR) region the substrates dominate over the manganite spectrum. However, the previously observed infrared active modes or mode pairs could be identified. In the mid-IR (MIR) region, a characteristic insulating gap at ∼700 cm⁻¹ is always present for all thin film studied, which shows substrate and thickness dependence.     

我国将举办第15届国际分子筛大会

经过激烈竞争，我国成功申请到第15届国际分子筛大会的主办权，大会将于2007年8月12日至17日在京举行。这是我国首次举办这一盛会。     

2016中国国际石墨烯创新大会在青岛隆重召开

正2016年9月23日上午,由中国石墨烯产业技术创新战略联盟和青岛市国家高新技术产业开发区联合主办、青岛国际石墨烯创新中心承办的第三届中国国际石墨烯创新大会(GRAPCHINA 2016)隆重开幕。GRAPCHINA 2016以新势力、新常态、新突破为主题,汇聚了来自全球的300余位业内学者,其中包括2010年诺贝尔物理学奖获得者、英国曼彻斯特大学纳米科技中心主任Andre·Geim教授等10余位国外著名专家,赵宪庚、成会明、屠海令等两     

新加坡医用纳米薄膜问世

新加坡科研人员最近利用纳米技术,成功研制出一种有助于患者伤口愈合的透明薄膜。据报道,新加坡生物工程和纳米技术研究院研制出的这种特殊薄膜,不仅能促进伤口附近细胞生长,加快伤口愈合,而且还能使患者看见伤口愈合情况。这种薄膜对温度极为敏感,伤口愈合后,患者只需用冰袋或冷水降温,就会很容易撕下薄膜,而且不会损害刚刚愈合的伤口。目前,新加坡已就此申请专利,估计产品会在一两年后面市。新加坡医用纳米薄膜问世$新华社