国际薄膜大会Thin Films 2016 新加坡2016.07.12-15

<正>薄膜领域最具影响力的国际会议"Thin Films 2016"将于2016年7月12号-15号在新加坡召开。此次国际会议是国际薄膜学会主办的薄膜及涂层领域的又一次盛会。"Thin Films 2016"国际会议是国际薄膜学会系列会议的第8届,大会主席为国际薄膜学会理事长、国际薄膜领域的著名学者新加坡南洋理工     

国际薄膜大会Thin Films 2016 新加坡2016.07.12-15

<正>薄膜领域最具影响力的国际会议"Thin Films 2016"将于2016年7月12号-15号在新加坡召开。此次国际会议是国际薄膜学会主办的薄膜及涂层领域的又一次盛会。"Thin Films 2016"国际会议是国际薄膜学会系列会议的第8届,大会主席为国际薄膜学会理事长、国际薄膜领域的著名学者新加坡南洋理工大学的Sam Zhang教授。此次会议的主题涵盖了薄膜领域的前沿和热点问题,包括:工业应用涂层、生物     

国际薄膜大会Thin Films 2016

<正>新加坡2016.07.12-15薄膜领域最具影响力的国际会议"Thin Films 2016"将于2016年7月12号-15号在新加坡召开。此次国际会议是国际薄膜学会主办的薄膜及涂层领域的又一次盛会。"Thin Films 2016"国际会议是国际薄膜学会系列会议的第8届,大会主席为国际薄膜学会理事长、国际薄膜领域的著名学者新加坡南洋理工大学的Sam Zhang教授。此次会议的主题涵盖了薄膜领域的前沿和热点问题,包括:工业应用涂层、生物     

国际材联-亚洲材料大会2016暨中国材料大会2016（英文）

正October 20~24,2016,Qingdao,China Web:http://www.c-mrs.org.cn/iumrs-ica 2016Organized by:Chinese Materials Research Society(C-MRS)International Union of Materials Research Societies(IUMRS)Qingdao Science and Technology Association Co-organized by Materials Research Society-Taiwan(MRS-T)Supported by:Ministry of Science and Technology of China     

Thermal Oxidation of Thin Cu–Ti Films

Thin Cu–Ti films are grown on single-crystal silicon substrates by magnetron sputtering, and their oxidation is studied between 420 and 670 K. A technique is proposed for producing Cu–Ti films of controlled composition using a composite target. The phase composition of the films oxidized in oxygen at atmospheric pressure is determined, and their microstructure is studied by scanning electron microscopy. The films are found to contain the intermetallic compounds Cu₃Ti and CuTi₂, which form during both magnetron sputtering and subsequent oxidation.     

Nitrogen–Hydrogen Plasma Processing of Thin Vanadium Films

The chemical and microstructural processes induced in vanadium films by nitrogen–hydrogen plasma processing were characterized by x-ray diffraction, electron microscopy, and resistivity measurements. Conditions were identified under which vanadium nitride layers can be produced by plasma processing.     

Recent Progress in Thin 3He–4He Films

We review recent work on the properties of ³He–⁴He thin film mixtures. The subject is introduced by reviewing the contributions made by Gasparini and co-workers. In the first part of this survey, we examine a microscopic calculation of the effects that an adsorbed ³He component has on the collective excitations associated with a ⁴He film, third sound. The work in question computes the change in the third sound velocity due to adding ³He, and we can compare this with existing experiment. For small ³He coverage, the change in the third sound speed depends on the derivatives of the species chemical potentials with respect to the areal density. The microscopic calculation shows oscillations in the third sound speed that reflect the layered structure of the film. In the second part of this survey, we concentrate on the ³He component. An important impact of the ⁴He environment is to change the bare mass in the limit of zero ³He concentration to a hydrodynamic mass. Quasiparticle interactions are introduced through the Landau parameters. Our Landau parameters are determined by fitting s-wave and p-wave T-matrix components using experimental results for the effective mass and the spin susceptibility. We can then predict the thermodynamic behavior of the mixture films at finite polarization, and in addition we can predict the spectrum of zero-sound excitations at all polarizations.     

Thermal Oxidation of Thin Films of Fe–Ni Solid Solutions

The oxidation kinetics of thin films of dilute Fe–Ni solid solutions (0.17, 0.54, 0.65, 0.91, and 1.87 at % Ni) on single-crystal Si substrates are studied. The oxidation rate of the films is found to decrease with increasing Ni concentration. The predominant phase in all of the oxide layers is Fe₂O₃, independent of the oxidation conditions. It is shown that, at an Ni content of about 1 at %, the composition dependences of the oxide thickness, refractive index, extinction coefficient, and apparent activation energy for oxidation show extrema. The mechanism of film oxidation is discussed.     

Solid-State Reactions in CdS–Bi2S3 Thin Films

Structural, electrical, and optical data are used to elucidate the mechanisms of solid-state reactions in thin CdS–Bi₂S₃ films prepared by spray pyrolysis. The results indicate the formation of substitutional solid solutions and a chemical compound and intercalation of Cd between layers of Bi₂S₃.     

“Thermal Prism” Method for Measuring Thermophysical Properties of Thin Films

Theoretical principles underlying the photothermal method for measuring the thickness and thermal properties of a thin film located between two optical elements (“sandwich”) are analyzed. The method is based on the irradiation of the assembly by repetitive pulse laser radiation. Radiation is absorbed in the film and causes heating of the optical elements by heat conduction. The element is monitored by a narrow beam of a second low-power laser propagating through the heated region. The beam is deflected due to the spatial variation of the refractive index, and the magnitude of the deflection angle as a function of time contains the relaxation and “wave” components. It is shown that the phase of the “wave” component depends on the thickness and thermophysical properties of the film. The thermophysical properties of the film can be determined, provided that the analogous properties of the optical element are measured previously or otherwise known, by comparing experimentally measured values of the phase shift with theoretical values obtained from the analytical solution of the non-stationary two-dimensional heat conduction equation.     

Infrared Reflectivity Spectra of Manganite Thin Films Grown on Different Substrates

We have measured the reflectivity infrared (IR) spectra of R_1−x Ca _x MnO₃ (R = La, Pr) manganite thin films grown on different substrates (SrTiO₃ (STO), LaAlO₃ (LAO) and SrLaGaO₄ (SLGO)) manganites over a wide frequency (50–5000 cm⁻¹) range. In the Far IR (FIR) region the substrates dominate over the manganite spectrum. However, the previously observed infrared active modes or mode pairs could be identified. In the mid-IR (MIR) region, a characteristic insulating gap at ∼700 cm⁻¹ is always present for all thin film studied, which shows substrate and thickness dependence.     

我国将举办第15届国际分子筛大会

经过激烈竞争，我国成功申请到第15届国际分子筛大会的主办权，大会将于2007年8月12日至17日在京举行。这是我国首次举办这一盛会。     

Controlling Exchange Coupling Strength in Ni x Cu1−x Thin Films

The thickness (d _F) and concentration (x) dependence of the Curie temperature of Ni _x Cu_1?x (d _F) ferromagnetic alloy layers (x=0.55, 0.65, d _F=[4.5 nm÷12 nm]) in contact with a vanadium layer was studied. The Curie temperature of the ferromagnetic layers depends on the thickness when it is comparable with the transition layer between the F and the vanadium layers, which is attributed to the proximity coupling of the interface region with the rest of the F layer. The present study provides valuable information for fabrication of samples with controlled exchange coupling strength for studies of superconductor/ferromagnet proximity effects.     

2016中国国际石墨烯创新大会在青岛隆重召开

正2016年9月23日上午,由中国石墨烯产业技术创新战略联盟和青岛市国家高新技术产业开发区联合主办、青岛国际石墨烯创新中心承办的第三届中国国际石墨烯创新大会(GRAPCHINA 2016)隆重开幕。GRAPCHINA 2016以新势力、新常态、新突破为主题,汇聚了来自全球的300余位业内学者,其中包括2010年诺贝尔物理学奖获得者、英国曼彻斯特大学纳米科技中心主任Andre·Geim教授等10余位国外著名专家,赵宪庚、成会明、屠海令等两     

新加坡医用纳米薄膜问世

新加坡科研人员最近利用纳米技术,成功研制出一种有助于患者伤口愈合的透明薄膜。据报道,新加坡生物工程和纳米技术研究院研制出的这种特殊薄膜,不仅能促进伤口附近细胞生长,加快伤口愈合,而且还能使患者看见伤口愈合情况。这种薄膜对温度极为敏感,伤口愈合后,患者只需用冰袋或冷水降温,就会很容易撕下薄膜,而且不会损害刚刚愈合的伤口。目前,新加坡已就此申请专利,估计产品会在一两年后面市。新加坡医用纳米薄膜问世$新华社     

Thermal Stability of ALD Lanthanum Aluminate Thin Films on Si(100)

The thermal stability of high-K dielectrics on Si is critical in avoiding the malfunction of metal oxide field effect transistors(MOSFET) in devices.Series of annealing experiments have been performed to investigate the thermal stability of atomic layer deposited(ALD) lanthanum aluminate(LAO) thin films,a promising amorphous high-K candidate.The abrupt interface between LAO and Si remains intact at temperatures below 600 C.Above this temperature,a SiO_2-rich interfacial layer begins to appear and thickens at higher temperatures.At900 ℃,the interface is roughened due to the formation of nano sized crystal nuclei above the interfacial layer,which indicates the interfacial reactions with the Si substrate.The thermal stability of ALD Al_2O_3 thin films on Si have also been studied under similar conditions.The Al_2O_3/Si interface retains its smoothness even after full crystallization.This comparison suggests that the rare earth element may catalyze the interfacial reactions.Further annealing experiments on LAO films with different thickness and with a capping layer show that the oxygen source of the interfacial layer mainly comes from the ALD oxide films.     

Control of Microstructure in Iron–Carbon Thin Films by Means of Electromigration

Herein, it is demonstrated that high DC electric current densities can be used to tailor the microstructure of iron–carbon thin films. Specifically, elongated ferrite grains can be formed in a nanocrystalline matrix via a process involving electromigration-induced carbide migration. Herein this article, the parameters that are required to produce and control elongated grain formation in the Fe(C) system are mapped out and they are interpreted in terms of carbon electromigration, and the flux divergences need to reach a critical carbon concentration for precipitate growth and migration. Possible approaches to allow more precise control of the elongated grains are discussed, as are the requirements for material systems where microstructure control through electromigration should be feasible.     

Abnormal Behavior of the Angular Dependence of Resistivity in?YBCO?Thin Films

Careful investigation of the angular dependence of resistivity ??(??) (?? is the angle between the magnetic field and the ab-planes) as a function of the temperature within the superconducting transition in an applied magnetic field B up to 1 T for a series of YBa₂Cu₃O_7??? (YBCO) thin films revealed a large variation in the shape and width of the minimum displayed in the vicinity of ??=0??, from a flat to a very sharp behavior. The series of films studied included both optimally doped and underdoped samples of different T _c , critical current density?J _c , film thickness, and preparation techniques. ??(??) measured for B close to ??=0?? (B parallel to ab-planes) for both B??J and B??J (J is the applied current density) showed two classes of samples; class of samples where ??(??) is independent of the direction of B relative to J and the other class where ??(??) depends on the orientation B relative to?J. This unusual unique behavior motivated us to investigate its origin by looking at the scaling of ??(??) as a function of the reduced field. Scaling of ??(??)) with the reduced field B(?? ^?2cos?² ??+sin?²)^1/2 allowed a quantitative determination of the value of ?? (intrinsic anisotropy) which varies between 7 and 400, and is independent of film thickness and J _c . Analysis of the microstructure though XRD of the films studied showed that the anisotropy is related to microstrain of the films.     

YBa2Cu3O7−x Thin Films by Citrate-Based Non-fluorine Precursor

A new fluorine-free chemical solution deposition route has been developed for YBa₂Cu₃O_7−x (YBCO) thin films. The precursor was formed by dissolving metal nitrates and citric acid in ethylene glycol. Polyethyleneimine was used to modify the solution. The preparation of YBCO thin films consisted of repeated dip coating, drying, heat-treating in air and annealing in flowing argon with a small addition of oxygen and with final treatment in pure oxygen. The films were characterized by XRD and SEM and show dominating and well-textured YBCO phase. The AC susceptibility and magnetization measurements reveal a critical temperature about 90 K and a high critical current density, comparable with that of pulse laser deposited films. The simplicity and high performance of the method may be attractive for large-scale superconducting applications.