Growth of Ga_xIn_（1－x）Sb Alloys by MOCVD—Solid Composition Surface Morphology and Electrical Propert

ＧｒｏｗｔｈＯｆＧａ＿ｘＩｎ＿（１－ｘ）ＳｂＡｌｌｏｙｓｂｙＭＯＣＶＤ—ＳｏｌｉｄＣｏｍｐｏｓｉｔｉｏｎＳｕｒｆａｃｅＭｏｒｐｈｏｌｏｇｙａｎｄＥｌｅｃｔｒｉｃａｌＰｒｏｐｅｒｔｉｅｓＺｈａｎｇＢａｏｆｉｎ，ＺｈｏｕＴｉａｎｍｉｎｇ，ＪｉａｎｇＨｏｎ...     

Homo-and Hetero-epitaxial GaSb Layers by MOCVD

Metalorganic chemical vapor deposition(MOCVD) growth of homo-and hetero-epitaxial GaSb has beeninvestigated,by using trimethylgallium(TMGa)and trimetbylantimony(TMSb)as source materials on n-typeGaSb and semi-insulating GaAs substrates.The influence of Ⅲ/Ⅴ ratio on the growth of GaSb was studiedin detail and it was found that the Ⅲ/Ⅴ ratio range proper for good quality epi-layers is narrow.The carriermobility and concentration of undoped GaSb epi-layers are about 600 cm~2/Ⅴ·s and 2～4×10~(16)cm~(-3)atroom temperature,respectively.The low temperature(77K)mobility is about 5 times of the roomtemperature's one.The low temperature(11K)photoluminescence(PL)spectrum and the temperature depen-dence of PL spectrum were investigated.The red shift of bound exciton with temperature was observed.     

Growth and Characterization of AIGaAsSb by MOCVD

ＧｒｏｗｔｈａｎｄＣｈａｒａｃｔｅｒｉｚａｔｉｏｎｏｆＡＩＧａＡｓＳｂｂｙＭＯＣＶＤＷｕＷｅｉ；ＰｅｎｇＲｕｉｗｕａｎｄＷｅｉＧｕａｎｇｙｕ（吴伟）（彭瑞伍）（韦光宇）ＳｈａｎｇｈａｉＩｎｓｔｉｔｕｔｅｏｆｍｅｔａｌｌｕｒｇｙ，ＣｈｉｎｅｓｅＡｃａｄ...     

Growth of MgO Thin Film on Silicon Substrate by MOCVD

Highly oriented MgO(111)and MgO(100)thin films have been deposited on Si(111)and Si(100)substratesby using Low Pressure MOCVD(LPMOCVD).Magnesium 2,4-pentanedionate was used as the source ma-terial.The films have a very smooth surface morphology and optical transparency with an index of refractionof 1.71(632.8 nm).Typical growth rate of the films is 1.0 μm/h.The data of X-ray diffraction analysis indi-cate that the films are fully textured with(111)and(100)orientation perpendicular to the substrate surfacerespectively.The main parameters having influence on the deposition are the substrate temperature,the totalpressure in the reaction chamber,the reaction gases and its flowrate.     

Preparation of Ga_(1-x)In_xAs_(1-y)Sb_y by MOCVD

The GalnAsSb quaternary alloys for 2～4 μm long wavelength optoelectronics have been prepared byMOCVD.The growth of buffer layers and the employment of GaSb/GaAs and GaSb/GaSb hybridsubstrates are mentioned,which effectively improve the properties of GalnAsSb epilayers.In order to controlthe epitaxial growth of GaSb and GalnAsSb,emphasis is given on the deposition rates,growth temperaturesand the relationship between growth conditions and the distribution coefficients of In and Sb.The experimen-tal solid compositions in this work are predicted by the thermodynamic calculations.Whether the growth ofGalnAsSb epilayers is controlled by chemical reactions or by mass diffusions depends on growth temperatures.This argument is verified by kinetic considerations.The FWHMs of the DCXD (double crystal X-raydiffraction)spectra of GalnAsSb epilayers grown on GaSb/GaSb and GaSb/GaAs hybrid substrates areabout 200～300 arcsec and 800 arcsec respectively.The unintentionally doped GalnAsSb epilayers have themobilities of μp=100～240 cm~2/V·s at 300 K.The corresponding wavelength ofMOCVD GaInAsSb alloysis calculated from EPMA(electronic probe microanalysis)data and determined by FTIR(Fourier transformedinfrared spectroscopy)measurement.     

MOCVD Growth of Doped GaAs/AlGaAs Quantum Heterostructures

The influences of growth techniques of AP-MOCVD GaAs/AlGaAs silicon-doped multi-quantum wells(MQWs), heterostructure bipolar transistors (HBTs), double barrier resonant tunneling diodes(DBRTDs) ontheir structures and performances were studied. Continuously grown MQWs, that is, no growth interruption atthe heterointerfaces, shown blue-shifted, narrower and stronger photoluminescence(PL) compared withinterruptedly grown ones.TEM examination of the interrupted interfaces revealed a bright line correspondingto the compositional fluctuation and impurity adsorption, and indicated noncommutative structures ofAlGaAs/GaAs and GaAs/AlGaAs interfaces. High performance HBTs and DBRTDs were obtained bycontinuously grown method while growth interruption caused performance degradation. It was concluded thatgrowth interruption may cause accumulation of residua1 impurities in the ambient as well as compositionalfluctuation while continuous growth at very low growth rates can overcome such problems.     

Compositional Dependence of Surface Morphology and Electrical Properties of GaInAsSb Alloys Grown by Metalorganic Chemical Vapor Deposition

ＣｏｍｐｏｓｉｔｉｏｎａｌＤｅｐｅｎｄｅｎｃｅｏｆＳｕｒｆａｃｅＭｏｒｐｈｏｌｏｇｙａｎｄＥｌｅｃｔｒｉｃａｌＰｒｏｐｅｒｔｉｅｓｏｆＧａＩｎＡｓＳｂＡｌｏｙｓＧｒｏｗｎｂｙＭｅｔａｌｏｒｇａｎｉｃＣｈｅｍｉｃａｌＶａｐｏｒＤｅｐｏｓｉｔｉｏｎＮｉｎ...     

Growth and Characterization of AlInAs on InP Substrate by Molecular Beam Epitaxy

ＧｒｏｗｔｈａｎｄＣｈａｒａｃｔｅｒｉｚａｔｉｏｎｏｆＡｌＩｎＡｓｏｎＩｎＰＳｕｂｓｔｒａｔｅｂｙＭｏｌｅｃｕｌａｒＢｅａｍＥｐｉｔａｘｙＣｈｅｎＪｉａｎｘｉｎ；ＬｉＡｉｚｈｅｎａｎｄＱｉｕＪｉａｎｈｕａ（陈建新）（李爱珍）（邱建华）（Ｓｈａｎｇｈａ...     

Growth Kinetic Studies for MOCVD CdTe and HgCdTe Epilayers on GaAs Substrates

The growth rates of CdTe and CMT on GaAs and on CdTe / GaAs substrates were studied as a functionof temperature and gas composition. A Langmuir-Hinshelwood Model for surface reaction control region issuggested. The CdTe/GaAs interface was examined by X-ray double crystal diffraction, laser Ramanspectroscopy and transmission electron microscopy (TEM). A defect layer was observed at CdTe / GaAs inter-face. The relationship between interface qualities and electrical properties of CMT overlayers was discussed.     

Preparation of TiO_2 Film Deposited by MOCVD and Quality of Film Measured by Impedance Method

ＰｒｅｐａｒａｔｉｏｎｏｆＴｉＯ＿２ＦｉｌｍＤｅｐｏｓｉｔｅｄｂｙＭＯＣＶＤａｎｄＱｕａｌｉｔｙｏｆＦｉｌｍＭｅａｓｕｒｅｄｂｙＩｍｐｅｄａｎｃｅＭｅｔｈｏｄＣｈｅｎＹａｎｓｈｅｎｇａｎｄＤｕａｎＳｈｕｚｈｅｎ（陈燕生）（段淑贞）Ｕｎｉｖｅｒｓｉｔｙ...     

Investigation of niobium nitride and oxy-nitride films grown by MOCVD

Niobium nitride (NbN) and niobium oxy-nitride (NbO_xN_y) thin films were grown by metalorganic chemical vapor deposition (MOCVD) on Si(100) and Si(111) substrates using [Nb(N^tBu)(NMe₂){C(NⁱPr)₂(NMe₂)}₂] [NB; ^tBu = (CH₃)₃C; Me = CH₃; ⁱPr = (CH₃)₂CH] as a simultaneous Nb and N precursor. While NbN films were synthesized under a pure N₂ atmosphere, NbO_xN_y films were synthesized under N₂-O₂ flow (N₂:O₂ = 1-5) in the temperature range 400-600 °C, as well as by NbN deposition followed by ex-situ thermal treatments under flowing O₂ at 400-600 °C. The samples were subjected to a multi-technique characterization in order to elucidate the interplay between their structure, morphology and composition and the adopted processing parameters. Particular attention was devoted to the presence of Nb-N and Nb-O-N phases and their distribution in the films, as well as to surface oxidation phenomena. For the first time, niobium oxy-nitride coatings were obtained by CVD starting from the above precursor compound, with growth rates up to 270 Å/min on Si(111) at 600 °C. The films were characterized by a columnar-like/globular morphology when supported on Si(100)/Si(111) and revealed a higher crystallinity on the latter substrate. Surface and in-depth compositional analyses evidenced a limited carbon contamination and the Co-existence of niobium nitride, NbON and Nb₂O₅. In particular, the presence of the latter in the outermost sample layers was explained by oxidation phenomena occurring upon contact with the outer atmosphere.     

MOCVD Growth of GaAs / Al_xGa_(1-x) As Superlattices

ＭＯＣＶＤＧｒｏｗｔｈｏｆＧａＡｓ／Ａｌ＿ｘＧａ＿（１－ｘ）ＡｓＳｕｐｅｒｌａｔｔｉｃｅｓＸｕＸｉａｎ＇ｇａｎｇ；ＨｕａｎｇＢａｉｂｉａｏ；ＲｅｎＨｏｎｇｗｅｎ；ＬｉｕＳｈｉｗｅｎａｎｄＪｉａｎｇＭｉｎｈｕａ（徐现刚）（黄柏标）（任红文）（刘士文）（...     

Preliminary Study on Electrical and Optical Properties of ZnO Film Grown by MOCVD

1 ＩｎｔｒｏｄｕｃｔｉｏｎＺｎＯｉｓａｗｉｄｅ ｇａｐ ( 3.2ｅＶａｔｒｏｏｍｔｅｍｐｅｒａｔｕｒｅ)ｓｅｍｉｃｏｎｄｕｃｔｏｒｍａｔｅｒｉａｌｈａｖｉｎｇｔｈｅｗｕｒｔｚｉｔｅｓｔｒｕｃｔｕｒｅｗｉｔｈｄｉｒｅｃｔｅｎｅｒｇｙｂａｎｄ .Ｉｔｈａｓｂｅｅｎｃｏｎｓｉｄｅｒｅｄａｓａｐｒｏｍｉｓ ｉｎｇｍａｔｅｒｉａｌｆｏｒｏｐｔｏｅｌｅｃｔｒｏｎｉｃｄｅｖｉｃｅｓｉｎｔｈｅｎｅａｒｕｌｔｒａｖｉｏｌｅｔ(ＵＶ)ａｎｄｂｌｕｅｓｐｅｃ ｔｒａ .ＡｎｉｎｔｅｒｅｓｔｉｎｇｆｅａｔｕｒｅｏｆＺｎＯｉｓｉｔｓｌ…     

MOCVD法制备钯膜用的前驱体研究现状

金属钯薄膜作为一种新型的稀贵金属低维材料,因为其优异的物理和化学性能,在耐高温涂层、微电子、膜反应器、催化等领域有着非常重要的应用。钯薄膜优异的性能及广阔的应用前景引起人们广泛的关注。介绍了金属有机化学气相沉积(MOCVD)法制备钯膜用前驱体的研究进展以及MOCVD工艺中各类前驱体的优缺点,概述了其目前研究的热点和进一步研究的方向。     

MOCVD Growth of Quaternary Ga_xIn_(1-x)As_(1-y)Sb_yAlloys:Solid Composition

ＭＯＣＶＤＧｒｏｗｔｈｏｆＱｕａｔｅｒｎａｒｙＧａｘＩｎ１－ｘＡｓ１－ｙＳｂｙＡｌｏｙｓ：ＳｏｌｉｄＣｏｍｐｏｓｉｔｉｏｎＺｈａｎｇＢａｏｌｉｎ，ＪｉｎＹｉｘｉｎ，ＺｈｏｕＴｉａｎｍｉｎｇ，ＮｉｎｇＹｏｎｇｑｉａｎｇ（张宝林）（金亿鑫）（周天明）（宁永强）ＪｉａｎｇＨｏｎｇａｎｄＬｉＳｈｕｗｅｉ（蒋红）（李树纬）ＣｈａｎｇｃｈｕｎＩｎｓｔｉｔｕｔｅｏｆＰｈｙｓｉｃｓ，ＣｈｉｎｅｓｅＡｃａｄｅｍｙｏｆＳｃｉｅｎｃｅｓ，Ｃｈａｎｇｃｈｕｎ，１３００２１，ＣｈｉｎａＲｅｃｅｉｖｅｄ２５Ｊｕｌｙ１９９…     

Morphological, structural, and mechanical characterizations of InGaN thin films deposited by MOCVD

Presented in this study are surface roughness, crystalline structure, and nanomechanical properties of InGaN thin films deposited under various growth temperatures, obtained by means of X-ray diffraction (XRD), atomic force microscopy (AFM), and nanoindentation techniques. The InGaN thin films with different In contents were deposited on sapphire substrates through a metal-organic chemical-vapor deposition (MOCVD) system. Changes in mechanical properties for InGaN thin films are discussed in conjunction with deposition temperature, surface morphology and crystalline structure. The XRD measurements showed that there was no phase separation of In as the In composition went from 25 at.% to 34 at.%. Moreover, both XRD and AFM showed larger grain and surface roughness in In_0.25Ga_0.75N thin films. Nanoindentation results indicate that hardness and Young's modulus both decreased as the indentation depth increased. The contact stress–strain relationships were also analyzed.     

MOCVD法制备Ir/C簇膜的成分与结构研究

以乙酰丙酮铱为前驱体,采用金属有机化合物化学气相沉积(MOCVD)技术在石英片上沉积了Ir/C簇膜.研究了氧气流量及沉积温度对Ir/C簇膜成分和结构的影响.研究发现,少量氧气的加入(4mL/min)大幅度地降低了Ir/C簇膜中碳元素的含量;沉积温度对薄膜中碳含量的影响规律则比较复杂:未通氧气的情况下,在实验温度范围内碳含量随着温度的升高而增大,而在通入氧气的情况下碳含量呈现出先升后降的复杂变化趋势.大量碳的沉积宽化了Ir的衍射峰,使其具有非晶衍射的特征.当沉积温度为650℃,未通氧气沉积的Ir/C簇膜中铱晶粒粒经约为3nm.     

Prediction of Composition of GaInAsSb Epilayers by MOCVD Using Pattern Recognition and Artificial Neural Network Method

ＰｒｅｄｉｃｔｉｏｎｏｆＣｏｍｐｏｓｉｔｉｏｎｏｆＧａＩｎＡｓＳｂＥｐｉｌａｙｅｒｓｂｙＭＯＣＶＤＵｓｉｎｇＰａｔｅｒｎＲｅｃｏｇｎｉｔｉｏｎａｎｄＡｒｔｉｆｉｃｉａｌＮｅｕｒａｌＮｅｔｗｏｒｋＭｅｔｈｏｄＹａｎＬｉｕｍｉｎｇ①（严六明）ＥａｓｔＣｈ...     

MOCVD GaAs/AIGaAs Multiquantum Well Structures and Observation upon the Intersubband Absorption

This paper presents Atmospheric Pressure Metalorganic Chemical Vapor Deposition(AP-MOCVD)growth of GaAs/Al-xGa_(1-x)As multiquantum wells for the study of intersubband transition.The multiplequantum well structures are characterized by using cross-sectional transmission electron microscopy(TEM)and low temperature photoluminescence(PL),which are in consistent with the designed parameters.The in-frared absorption from intersubband transitions between the bounded- ground state and the extended excitedstate in GaAs/AtGaAs quantum wells shows peak at 10 μm with FWHM 250 cm~(-1).The absorption peakpositions are in agreement with the calculated results based on the envelope function approximation.     

Chemical Thermodynamic Analysis of Silicon Doping in MOCVD of GaAs System

With chemical thermodynamic method,enthalpies,entropies and heat capacities of(SiH_3)_nAsH_(3-n)(1≤n≤3),(CH_3)_mSiH_(4-m)(1≤m≤4)and their radicals were calculated.Homogeneous reactions equilibrium of 65gas phase species in SiH_4(or Si_2H_6)doped MOCVD GaAs by TMG and AsH_3 system was analyzed,the re-lations of gas phase partial pressures with growth temperatures and input partial pressures were calculated.When the gas phase is saturated with a GaAs:Si solid,the gas phase partial pressures and solid phase siliconimpurity(Si_(Ga)-As,Ga-Si_(As),Si_(Ga)-Si_(As))concentrations were calculated under different growth temperatures andinput partial pressures.With the above results,some of the Si doping behavior in MOCVD of GaAs are ex-plained.