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1.
Copper was alloyed with small amounts of Al (0.2, 0.5, 1.0 and 2.0 mass%) to improve the oxidation resistance. Copper (6 N) and the Cu-Al alloys were oxidized at 773-1173 K in 0.1 MPa oxygen atmosphere after hydrogen annealing at 873 K. Continuous very thin Al2O3 layers were formed on the surface of all Cu-Al dilute alloys during the hydrogen annealing. Oxidation resistance of Cu-Al alloys was improved especially for Cu-2.0Al at 773-973 K, while it decreases on increasing the oxidation temperature. Cu-Al alloys followed the parabolic rate law at 1173 K, but most of other cases do not at and below 1073 K. Oxidation resistance for Cu-Al alloys was found relevant to the maintenance of the thin Al2O3 layer at the Cu2O/Cu-Al alloy interface.  相似文献   

2.
The effects of annealing temperature on microstructures, phase transformation, mechanical properties, and shape memory effect of Ti–20Zr–10Nb–5Al alloy were investigated. X-ray diffraction(XRD) patterns show that the alloy is composed of single hexagonal ɑ'-martensite phase for both as-rolled sample and sample annealed at773 K for 30 min, while single orthorhombic ɑ' phase exists in the samples annealed at 873 and 973 K for30 min. The optical observations indicate that the alloy is recrystallized when annealed at 873 K, and the grain size of the sample annealed at 973 K is about five times larger than that annealed at 873 K. Both of the samples annealed at 873 and 973 K show almost the same reverse martensite transformation start temperature of 483 K as demonstrated by thermal dilatation tests. The critical stress values for martensite reorientation(σ_M) are 392 and 438 MPa for the alloys annealed at 873 and 973 K, respectively. The maximum shape memory strain is 2.8 %, which is obtained in the alloy annealed at 873 K due to the lower σ_M. Moreover,the sample annealed at 873 K exhibits larger tensile stress and tensile strain due to the smaller grain size.  相似文献   

3.
Various alloys are interconnected with W using a Ni intermediate layer by the diffusion bonding (DB) technique. During solid-state heating in the DB technique, however, reactive diffusion occurs at the interconnection between Ni and W. In order to examine the kinetics of the reactive diffusion, sandwich Ni/W/Ni diffusion couples were isothermally annealed at temperatures of T = 1023-1173 K for various times up to t = 366 h. Owing to annealing, Ni4W is produced as a layer at the Ni/W interface in the diffusion couple and grows predominantly towards Ni. The thickness of the Ni4W layer increases in proportion to a power function of the annealing time. The exponent of the power function is close to 0.5 at T = 1173 K and gradually decreases with decreasing annealing temperature. Furthermore, grain growth takes place in Ni4W due to annealing. Therefore, volume diffusion is the rate-controlling process for the growth of Ni4W at T = 1173 K. At T < 1173 K, however, boundary diffusion contributes to the rate-controlling process, and the contribution of boundary diffusion increases with decreasing annealing temperature. On the other hand, a region alloyed with W is formed in Ni from the Ni4W/Ni interface by diffusion-induced recrystallization (DIR). The growth rate of the DIR region is much greater than the penetration rate of W into Ni by volume diffusion, and the concentration of W in the DIR region at the Ni4W/Ni interface is equal to the solubility of W in Ni. Such growth behavior of the DIR region was numerically analyzed using a mathematical model. The analysis indicates that the growth of the DIR region is controlled by the interface reaction at the moving boundary of the DIR region as well as the boundary diffusion along the grain boundaries across the DIR region under the present annealing conditions.  相似文献   

4.
The electroreduction process of Zr(IV) was studied at molybdenum electrode in LiCl-KCl-K2ZrF6 molten salt. The transient electrochemical techniques, such as cyclic voltammetry and chronopotenimetry were used. The experimental results showed that the electrochemical reduction of Zr(II)/Zr and Zr(IV)/Zr(II) were both diffusion-controlled process. In the 773-973 K range, the diffusion coefficients of Zr(ii) and Zr(IV) were determined: DZr(II) = 0.15567exp{−69.65 × 103RT(K)} cm2/s, DZr(IV) = 1.09 × 10−4 exp{−44.39 × 103RT(K)} cm2/s. The activation energy values for the diffusion process were 69.65 kJ/mol and 44.39 kJ/mol, respectively.  相似文献   

5.
采用OM和铁素体测量仪研究了铸态Fe-18Mn-5.5Si-9.5Cr-4Ni合金的微观组织随退火温度的改变及其对合金形状记忆效应的影响.结果表明,在773-1173 K之间退火处理能进一步提高合金的形状记忆效应.经973 K退火30 min后,合金的可恢复变形量达到了6.4%,比训练4次的常规Fe-14Mn-5Si-8Cr-4Ni合金高1.2%.当铸态合金在低于1173 K退火30min后,δ铁素体仍为条状,变形时能使应力诱发ε马氏体以区域化的方式形成,合金具有良好的形状记忆效应;当退火温度高于1273 K时,δ铁素体将固溶到奥氏体中,体积分数减少.当退火温度进一步升高到1423 K时,δ铁素体的体积分数显著增加,形态由条状演变为岛状.条状δ铁素体体积分数的减少和岛状δ铁素体的形成导致δ铁素体不能有效分割奥氏体晶粒,合金的形状记忆效应显著下降.  相似文献   

6.
The intermetallic compound Zr3Al is severely deformed by the method of repeated cold rolling. By X-ray diffraction it is shown that this leads to amorphization. TEM investigations reveal that a homogeneously distributed debris of very small nanocrystals is present in the amorphous matrix that is not resolved by X-ray diffraction. After heating to 773 K, the crystallization of the amorphous structure leads to a fully nanocrystalline structure of small grains (10-20 nm in diameter) of the non-equilibrium Zr2Al phase. It is concluded that the debris retained in the amorphous phase acts as nuclei. After heating to 973 K the grains grow to about 100 nm in diameter and the compound Zr3Al starts to form, that is corresponding to the alloy composition.  相似文献   

7.
The microstructure and shape memory behavior of Ti55.5Ni45.5−xCux (x = 11.8–23.5) thin films annealed at 773, 873, and 973 K for 1 h were investigated. None of the films except the Ti55.4Ni32.8Cu11.8 film annealed at 773 K for 1 h had any precipitates in the B2 grain interiors and their grain sizes were small (less than 1 μm). Increasing the annealing temperature caused grain growth and thus a decrease in the critical stress for slip and an increase in the martensitic transformation start temperature (Ms). The grain size was also controlled by the growth of a second phase. In the three-phase equilibrium region of Ti2Ni, Ti2Cu and TiNi, Ti2Cu grains grew faster than Ti2Ni grains, leading to a decrease in the critical stress for slip and an increase in the Ms temperature with increasing Cu content.  相似文献   

8.
《Acta Materialia》2007,55(1):335-343
The grain boundary segregation in an Cu–50 at.ppm Bi alloy annealed at two temperatures and under various hydrostatic pressures in a hot isostatic pressing apparatus was investigated by means of Auger electron spectroscopy. It was found that high pressures have only little effect on grain boundary segregation. At a temperature of 973 K the segregation level remained approximately constant at 2 monolayers of Bi for all pressures studied. Some decrease of the grain boundary segregation with increasing pressure was observed at 1173 K. It was also demonstrated that the segregation level in the alloy treated at 0.01 GPa depended on the sample cooling rate after annealing. The observed pressure dependence of Bi segregation to the grain boundaries was interpreted in terms of non-equilibrium segregation during specimen cooling.  相似文献   

9.
A. Ishida  M. Sato 《Intermetallics》2011,19(12):1878-1886
The shape memory behaviours of Ti51.4Ni25.2Cu23.4, Ti51.3Ni21.1Cu27.6, Ti51.2Ni15.7Cu33.1 and Ti51.4Ni11.3Cu37.3 thin films annealed at 773, 873 and 973 K for 1 h were investigated. The Ti51.3Ni21.1Cu27.6 film annealed at 773 K, the Ti51.2Ni15.7Cu33.1 film annealed at 873 K, and the Ti51.4Ni11.3Cu37.3 films annealed at 873 and 973 K showed a perfect shape memory effect at a stress as high as 1 GPa. This improvement in shape memory behaviour was attributed to their fine grain sizes less than 500 nm. Whereas the Ti51.2Ni15.7Cu33.1 and Ti51.4Ni11.3Cu37.3 films annealed at 873 K or higher showed a martensitic transformation start temperature above room temperature, these films annealed at 773 K were in the parent phase at room temperature owing to their very fine grain sizes. The effects of Cu content and annealing temperature on the shape memory behaviour of the Ti51.5Ni48.5?xCux (x > 27) films with submicron grain sizes were discussed in comparison with those of the Ti51.5Ni48.5?xCux (x < 24) films on the basis of their microstructures.  相似文献   

10.
The LaFe11.6Si1.4 compounds are prepared by arc-melting and then annealed at different high temperatures from 1323 K(5 h) to 1623 K(2 h). The powder X-ray diffraction and metallographic microscopy show that 1423 K and 1523 K are two curial temperatures, at which large amount of 1:13 phase begins to form and the most amount of 1:13 phase is obtained, respectively. With annealing temperature increasing to 1573 K and 1623 K, a new phase of La5Si3 is detected in LaFe11.6Si1.4 compound. According to the DSC curve of as-cast LaFe11.6Si1.4 compound and the X-ray patterns of annealed LaFe11.6Si1.4 compounds, the high-temperature phase transition process is analyzed. For studying the influence of different high-temperature and short-time annealing on the Curie temperature, thermal and magnetic hysteresis, magnetocaloric effect of LaFe11.6Si1.4 compound annealed at different temperatures are also investigated.  相似文献   

11.
In comparison with CuAl (Al: 0.2 and 0.5 wt.%) alloys, corrosion resistance (CR) of CuMg (Mg: 0.12 and 0.34 wt.%) alloys was studied at 673-1173 K in atmospheric O2. All the samples were pre-annealed at 873 K in atmospheric H2. The CR of CuMg alloys at 673-973 K is improved in contrast to a pure Cu but much poorer than that of CuAl alloys, while the improvement can hardly be observed for CuMg alloys at and above 1073 K, which is similar to CuAl alloys. The poorer CR of CuMg alloys compared with that of CuAl alloys at 673-973 K is largely attributed to the incorporation of Cu in the MgO surface layer and the low Pilling-Bedworth ratio of CuMg-O system smaller than unity, and the vanishing of CR for CuMg alloys at and above 1073 K is ascribed to the instability of the MgO layer at the Cu2O/CuMg interface.  相似文献   

12.
The effect of cyclic deformation on superelasticity was investigated in a Ti–26 at.% Nb alloy. Loading and unloading tensile tests with a constant maximum applied strain of 2.5% were carried out until the 500th cycle. The critical stress for inducing the martensitic transformation and superelastic strain decreased, while the accumulated residual strain increased with increasing number of cycles. The increase in the residual strain during cyclic deformation was due mainly to α′′ martensite phase stabilization. Both the residual strain and the residual α′′ martensite phase increased with increasing number of cycles. The stability of superelasticity was improved, i.e. the residual strain decreased and the superelastic strain increased, by intermediate-temperature annealing and/or aging. The specimen annealed at 873 K for 0.6 ks followed by aging at 573 K for 3.6 ks exhibited the most stabilized superelasticity, owing to the combination effect of work hardening and fine ω-phase precipitation.  相似文献   

13.
To quantify the extent of chromium depletion, electrochemical potentiokinetic reactivation tests were performed on solution-annealed (1393 K) and solution-annealed followed by ageing at 973 K for 4 h or 16 h samples of austenitic Alloy 690. The electrochemical studies indicated very high equilibrium chromium concentration at the chromium carbide/matrix interface for the aged samples. A new electrochemical test parameter that is the ratio of peak activation to maximum passive current density (defined by Ia/If) was considered to express the extent of chromium depletion. The alloy, in three different heat-treated conditions, revealed unstable passivity in deaerated 5% and 10% NaOH solutions at 295 K. A comparatively higher passive current density of the aged samples in deaerated caustic environments than the annealed one could be attributed to reactivity of Cr-carbides with the caustic. Microscopic studies indicated that the TiN inclusion/matrix interface may provide a preferred site for pit initiation in caustic environments, which could be attributed to large degree of misfit between TiN inclusion and austenite matrix.  相似文献   

14.
The martensite structure in a Ti36Ni44Hf15Cu5 ribbon annealed at different temperatures is investigated. When the annealing temperature is <873 K, spherical (Ti,Hf)2Ni particles 20–40 nm in diameter precipitate in the grain interior. Transmission electron microscopy analysis shows that (0 0 1) compound twins are dominant in the ribbon containing homogeneously distributed (Ti,Hf)2Ni precipitates. When the annealing temperature is 773 K, the boundaries between the martensite domains with the (0 0 1) twins are blurry and vague. When the annealing temperature is 873 K, four types of boundaries among the martensite domains are found: {1 1 1}, (0 0 1)//{1 1 1}, {1 1 3} and (1 1 0)//{1 1 3} types. When the annealing temperature is 973 K, the (0 1 1) twins become dominant, and the martensite variants show mainly spear-like and mosaic-like morphologies. However, martensite domains with (0 0 1) twins also exist around the coarse (Ti,Hf)2Ni precipitates. Fine (Ti,Hf)2Ni precipitates should be responsible for the improvement in shape memory effect and the superelasticity of Ti–Ni–Hf–Cu ribbons.  相似文献   

15.
Nanocrystalline SmCo6.8Zr0.2 permanent magnets are prepared by intensive milling and subsequent annealing. XRD patterns of the samples annealed at 600 °C and 700 °C show a single SmCo7 phase with TbCu7 structure, while the SmCo7 phase decomposes into a mixture of Sm2Co17 and Co23Zr6 phase at higher annealing temperatures. The highest coercivity and energy product of about 2.06 T and 9.5MGOe are obtained in the sample annealed at 700 °C for 10 min. Further analysis reveals that a very strong inter-grain exchange coupling is observed in samples annealed at 700 °C for 3 (SZ-3) and 10 (SZ-10) min, indicating by the high remanence ratio and positive δm in henkel-plot. It was supposed that the magnetization reversal process is controlled by domain wall pinning.  相似文献   

16.
Blended elemental W–xTiC (x = 0, 5, 10, 15 wt%) powders were mechanically alloyed (MA’d) for 30 h in a SPEX Mixer/Mill at room temperature. About 1 wt% Ni was added to each MA’d batch as sintering aid which were further milled for 1 h. MA’d powders were sintered at 1400 °C for 2 h under Ar, H2 gas flowing conditions and annealed at 1600 °C for 6 h under Ar atmosphere. Microstructural characterizations of as-sintered and annealed samples were conducted using XRD and SEM. XRD patterns of the as-sintered and annealed samples revealed the presence of the matrix W and Ni phases, whereas (Tix,W1−x) solid solution phase came into existence after annealing. In addition to XRD patterns, hot combustion and infrared detection measurements revealed the decarburization of TiC. Relative density values varied between 85.2% and 96.4% after sintering. The density values of sintered samples decreased with increasing TiC content. After annealing, a maximum relative density value of 99.8% was achieved. Vickers microhardness values varied between 5.11 GPa and 10.79 GPa for as-sintered samples and a maximum microhardness value of 8.1 GPa was measured after annealing. Wear resistance of the as-sintered samples increased with increasing TiC content.  相似文献   

17.
In order to investigate the thermal stability of electrical properties for aluminum doped zinc oxide (ZnO:Al, AZO) films deposited by direct current reactive magnetron sputtering, AZO films deposited from an alloy target (0.8 wt.% Al) on soda-lime glasses were annealed in argon gas at different temperatures. A data capturer was applied to monitor and collect real-time sheet resistance (Rs) of the films throughout the annealing. Results revealed that Rs of the film heated at 100 °C was reduced throughout the annealing, however, conductivity of the films annealed over 100 °C was improved at early stage but then deteriorated all along to the end. Some novel Rs change points which need more penetrations were detected. The experimental results obtained from electron diffraction spectrum, X-ray diffraction pattern, X-ray photoelectron spectrum, and Hall measurement were analyzed to explore the effect of the annealing on the electrical properties of AZO films. It was found that the exotic element, which might influence the film properties, was not observed. It was also suggested that the transformation of the crystalline structure and surface chemical bonding states, which resulted in the decrease of carrier concentration and mobility could be the reason for the conductivity degeneration of the films annealed at higher temperature.  相似文献   

18.
Differential thermal analysis was carried out for ferromagnetic material MnBi in the temperature range 300-773 K in magnetic fields up to 45 T to investigate the effect of high magnetic fields on its decomposition process and corresponding phase diagram. The decomposition temperature Tt (MnBi → Mn1.08Bi + liquid Bi) increases from 632 K (at a zero field) to 714 K by applying a magnetic field of 45 T. Furthermore, the magnetocaloric effect of MnBi is observed in 11.5-45 T in the vicinity of 689 K, showing that a field-induced composition process occurs. The obtained results show that the equilibrium state of MnBi can be controlled by a high magnetic field.  相似文献   

19.
The effect of different mild post-annealing treatments in air, at 270 °C, for 4-6 min, on the optical, electrical, structural and chemical properties of copper sulphide (CuxS) thin films deposited at room temperature are investigated. CuxS films, 70 nm thick, are deposited on glass substrates by vacuum thermal evaporation from a Cu2S:S (50:50 wt.%) sulphur rich powder mixture. The as-deposited highly conductive crystalline CuS (covellite) films show high carrier concentration (∼1022 cm−3), low electrical resistivity (∼10−4 Ω cm) and inconclusive p-type conduction. After the mild post-annealing, these films display increasing values of resistivity (∼10−3 to ∼10−2 Ω cm) with annealing time and exhibit conclusive p-type conduction. An increase of copper content in CuxS phases towards the semiconductive Cu2S (chalcocite) compound with annealing time is reported, due to re-evaporation of sulphur from the films. However, the latter stoichiometry was not obtained, which indicates the presence of vacancies in the Cu lattice. In the most resistive films a Cu2O phase is also observed, diminishing the amount of available copper to combine with sulphur, and therefore the highest values of optical transmittance are reached (65%). The appearance on the surface of amorphous sulphates with annealing time increase is also detected as a consequence of sulphur oxidation and replacement of sulphur with oxygen. All annealed films are copper deficient in regards to the stoichiometric Cu2S and exhibit stable p-type conductivity.  相似文献   

20.
The microstructure and mechanical properties studies of a series of two-phase f.c.c./B2 (ordered b.c.c.) lamellar-structured, high entropy alloys (HEA) Fe36Ni18Mn33Al13Tix with x up to 6 at. % Ti have been investigated. X-ray microanalysis in a TEM showed that the Ti resided mostly in the B2 phase. The lamellar spacing decreased significantly with increasing Ti content from 1.56 μm for the undoped alloy to 155 nm with an addition of 4 at. % Ti, leading to a sharp increase in room-temperature yield strength,σy, from 270 MPa to 953 MPa, but with a concomitant decrease in ductility from 22% elongation to 2.3%. Annealing at 1173 K for 20 h greatly increased the lamellar spacing of Fe36Ni18Mn33Al13Ti4 to 577 nm, producing a corresponding decrease in σy to 511 MPa. The yield strengths of all the doped alloys decreased significantly when tensile tested at 973 K with a concomitant increase in ductility due to softening of the B2 phase. The fracture mode changed from cleavage at room temperature to a ductile dimple-type rupture at 973 K. The results are discussed in terms of the Hall-Petch-type relationship.  相似文献   

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