共查询到19条相似文献,搜索用时 140 毫秒
1.
采用溶液化学法实现了在Zn(NO3)2/C6H12N4混合溶液中ZnO纳米线在AZO薄膜修饰过衬底上生长。AZO薄膜由射频磁控溅射法制备,通过溅射时间和基底温度的变化改变薄膜形态,重点研究了不同薄膜形态对ZnO纳米线形貌和结构的影响,最终在溅射2h、基底温度250℃晶种上得到垂直于衬底、高度平行取向的ZnO纳米线阵列。在此基础上研究了不同形貌ZnO纳米线阵列的紫外光电导性能差异。结果表明,垂直生长的纳米线较倒伏纳米线紫外响应迅速,分析认为是紫外光照下曝光面积不同造成的。 相似文献
2.
采用光刻和射频磁控溅射技术在Si衬底上制备了图形化的ZnO种子层薄膜。分别采用气相榆运和水热合成法,制备了最小单元为30μm的图形化的ZnO纳米线阵列。X射线衍射(XRD)分析显示单晶纳米线阵列具有高度的c轴[001]择优取向生长性质,从扫描电子显微镜(SEM)照片看出,阵列图形完整清晰,边缘整齐,纳米线阵列在室温下光致发光(PL)谱线中在380hm左右具有强烈的紫外发射峰,可见光区域发射峰得到了抑制,证明ZnO纳米线阵列氧空位缺陷少,晶体质量高。 相似文献
3.
以Au薄膜为催化剂、ZnO与碳混合粉末为反应源,采用碳热还原法在单晶Si衬底上制备了ZnO纳米线阵列.通过扫描电子显微镜( SEM)、X射线衍射仪(XRD)、荧光分光光度计对样品的表征,研究了反应源温度对ZnO纳米线阵列的定向性和光致发光性能的影响.样品在源温度920℃条件下沿(002)方向择优生长,定向性最好,温度过低不利于ZnO纳米线阵列密集生长,而温度过高导致Zn原子二次蒸发,因而也不利于纳米线阵列的定向和择优生长;样品在源温度880℃有最强的近紫外带边发射,表明温度过高和过低都不利于ZnO晶体结构的优化;由于ZnO纳米线在缺氧氛围下生长,氧空位是缺陷存在的主要形式,因此所有样品都有较强的绿光发射.温度升高导致纳米线生长速度提高而增加了氧空位缺陷数量,从而使样品绿峰强度增强并在源温度920℃时达最大值,但温度的进一步升高可导致ZnO纳米线表面Zn元素的蒸发而降低氧空位缺陷的数量,从而抑制绿峰强度. 相似文献
4.
5.
6.
利用水溶液法制备ZnO纳米线,使用真空热蒸发方法用Ag对ZnO纳米线进行表面修饰。用场发射扫描电子显微镜(FESEM)、X射线衍射(XRD)仪、吸收谱仪分析它们的表面形貌、物相结构及光学性质,同时分析了其场发射性能。结果表明,随着Ag修饰量的增加,ZnO纳米线表面上的Ag纳米粒子分布会由稀疏逐步到致密,最后Ag的纳米粒子几乎连在一起。测量吸收谱线发现修饰后的ZnO纳米线的吸收能力变强,但存在一个临界值,当修饰量超过临界值后,ZnO纳米线的光吸收能力会减弱。对修饰后ZnO纳米线的场发射性能进行初步测试,结果表明适当量的Ag修饰可以有效降低ZnO纳米线的场发射开启电压。 相似文献
7.
8.
9.
10.
11.
Density control is a valuable concern in the research of ZnO nanowire arrays. In this study, unannealed and annealed ZnO thin films were used as substrates to fabricate ZnO nanowire arrays. In the unannealed thin film, an inhomogeneous distribution of the nanowire array was found: the density of nanowires decreases with the increase of distance to the edge. In the annealed thin film, the density of nanowire array becomes larger and more homogeneous. Moreover, nanowires are found in high density along microcracks. It is proposed that the residual stresses in the thin film and the density of the nanowire array are in inverse proportion, leading to the results mentioned above. The relationship between residual stresses and the density of nanowires will have potential applications in modifying the density of ZnO nanowire arrays. 相似文献
12.
13.
ZnO nanowire array films, composed of well aligned ZnO nanowires ~200?nm in diameter and 1?μm in length, were successfully synthesised on Mg doped gallium nitride by hydrothermal method. In addition, the films possess quite flatten surface. In the synthesised process, there was no catalyst that had been used. Growth conditions were comprehensively discussed in the process of aqueous solution method. It was found that the length of ZnO nanowires and the thickness of the film could be tunable by altering solution concentration and growth time. Such ZnO film assembled with vertically aligned nanowire may have potential applications as UV light emitting diodes. 相似文献
14.
An Al-doped ZnO (AZO) seed layer is prepared on the back side of a porous alumina membrane (PAM) substrate by spin coating followed by annealing in a vacuum at 400 °C. Zinc oxide in ordered arrays mediated by a high aspect ratio and an ordered pore array of AZO/PAM is synthesized. The ZnO nanowire array is prepared via a 3-electrode electrochemical deposition process using ZnSO4 and H2O2 solutions at a potential of − 1 V (versus saturated calomel electrode) and temperatures of 65 and 80 °C. The microstructure and chemical composition of the AZO seed layer and ZnO/AZO/PAM nanowire arrays are characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). Results indicate that the ZnO/AZO/PAM nanowire arrays were assembled in the nanochannel of the porous alumina template with diameters of 110–140 nm. The crystallinity of the ZnO nanowires depends on the AZO seed layer during the annealing process. The nucleation and growth process of ZnO/AZO/PAM nanowires are interpreted by the seed-layer-assisted growth mechanism. 相似文献
15.
ZnO纳米线阵列湿度传感器研究 总被引:2,自引:1,他引:1
采用水热法在Au/Ni叉指电极上原位生长出整齐的ZnO纳米线阵列。纳米线的平均直径和长度分别为50 nm和5μm,且沿[0001]方向高度择优生长。测试了基于纳米线阵列的湿敏器件对不同湿度电容和电阻响应,并分析了它的工作机制。实验结果表明,这些器件具有相对较大的灵敏度和较短的响应和恢复时间,从而说明ZnO纳米线阵列在湿敏领域有很好的应用前景。 相似文献
16.
Metal oxide nanostructures (CuO, Co3O4, ZnO and α-Fe2O3) have been successfully fabricated by a simple and efficient method: heating the appropriate metals in air at low temperatures ranging from 200 to 400℃. The chemical composition, morphology and crystallinity of the nanostructures have been characterized by micro-Raman spectroscopy, X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Two mechanisms: vapor-solid and surface diffusion play dominant roles in the growth of metal oxide nanostructures starting with low melting point metals (Zn and Cu) and high melting point metals (Fe and Co), respectively. With sharp ends and large aspect ratio, the metal oxide nanostructures exhibit impressive field-induced electron emission properties, indicating their potentials as future electron source and displays. The water wettability and anti-wettability properties of iron oxide nanoflakes were also discussed in this work. 相似文献
17.
采用高压脉冲激光沉积法(HP-PLD)研究了压强、金催化层厚度对钠掺杂氧化锌纳米线(ZnO:Na)生长的影响, 并制备了ZnO:Al薄膜/ZnO:Na纳米线阵列同质pn结器件。实验发现, 当金膜厚度为4.2 nm, 生长压强为3.33×104 Pa, 生长温度为875℃时, 可在单晶Si衬底上生长c轴取向性良好的ZnO纳米线阵列。X射线衍射和X射线光电子能谱综合分析证实了Na元素成功掺入ZnO纳米线晶格中。在低温(15 K)光致发光谱中, 观测到了一系列由Na掺杂ZnO产生引起的受主光谱指纹特征, 如中性受主束缚激子峰(3.356 eV, A0X)、导带电子到受主峰(3.312 eV, (e, A0))和施主受主对发光峰(3.233 eV, DAP)等。通过在ZnO:Al薄膜上生长ZnO:Na纳米线阵列形成同质结, 测得I-V曲线具有明显的整流特性, 证实了ZnO:Na纳米线具有良好的p型导电性能。 相似文献
18.
We report a systematic study of Si|ZnO and Si|ZnO| metal photocathodes for effective photoelectrochemical cells and hydrogen generation. Both ZnO nanocrystalline thin films and vertical nanowire arrays were studied. Si|ZnO electrodes showed increased cathodic photocurrents due to improved charge separation by the formation of a p/n junction, and Si|ZnO:Al (n(+)-ZnO) and Si|ZnO(N(2)) (thin films prepared in N(2)/Ar gas) lead to a further increase in cathodic photocurrents. Si|ZnONW (nanowire array) photocathodes dramatically increased the photocurrents and thus photoelectrochemical conversion efficiency due to the enhanced light absorption and enlarged surface area. The ZnO film thickness and ZnO nanowire length were important to the enhancements. A thin metal coating on ZnO showed increased photocurrent due to a catalyzed hydrogen evolution reaction and Ni metal showed comparable catalytic activities to those of Pt and Pd. Moreover, photoelectrochemical instability of Si|ZnO electrodes was minimized by metal co-catalysts. Our results indicate that the metal and ZnO on p-type Si serve as co-catalysts for photoelectrochemical water splitting, which can provide a possible low-cost and scalable method to fabricate high efficiency photocathodes for practical applications in clean solar energy harvesting. 相似文献
19.
Xue Wang Yong Ding Dajun Yuan Jung-Il Hong Yan Liu C. P. Wong Chenguo Hu Zhong Lin Wang 《Nano Research》2012,5(6):412-420
Vertically aligned ZnO nanowires have been synthesized by a hydrothermal method. After being irradiated by a short laser pulse, the tips of the as-synthesized ZnO nanowires can be tailored into a spherical shape. Transmission electron microscopy revealed that the spherical tip is a single-crystalline piece connected to the body of the ZnO nanowire, and that the center of the sphere is hollow. The growth mechanism of the hollow ZnO nanospheres is proposed to involve laser-induced ZnO evaporation immediately followed by re-nucleation in a temperature gradient environment. The laser-irradiated ZnO nanowire array shows hydrophobic properties while the original ZnO nanowire array shows hydrophilicity. The as-grown ZnO nanowire arrays with hollow spherical tips can serve as templates to grow ZnO nanowire arrays with very fine tips, which may be a good candidate material for use in field emission and scanning probe microscopy. 相似文献