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针对碳纳米管场发射显示器亮度低、发光均匀性差的问题,提出了氧化锌掺杂的方法.通过将氧化锌(ZBO)颗粒和碳纳米管(CNTs)及其他有机物按比例配成浆料,丝网印刷制作了阴极试样.场发射特性研究结果表明:与具有同样印刷面积的普通CNT试样比较,掺杂试样的开启电场从1.70 V/μm降低到1.17 V/μm;在2.05 V/μm场强下发射电流从185μA上升到510μA.且掺杂氧化锌试样具有较好的发射稳定性和均匀性.通过微观表征和特性测试,初步推断场发射特性的提高的原因:由于混合掺杂试样中氧化锌地填充在碳纳米管之间或者覆盖在顶上,提高了膜层导电性,改善了发射体的热传导性,且增加了有效发射体密度. 相似文献
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采用溶胶-凝胶法制备了碳纳米管/二氧化硅复合材料,并对复合材料的场发射特性进行了研究,结果表明:复合材料有很好的场发射特性,含有10%(质量分数)CNTs的复合材料开启场较低(0.98V/μm)。研究了用稀HF溶液处理复合材料表面后场发射性能,发现场发射性能明显改善,开启场由0.98V/μm下降到0.73V/μm,发射电流为1mA/cm^2时的电场由2.1V/μm下降到1.0V/ μm。研究表明碳纳米管/二氧化硅复合材料非常适用于场发射平面显示器中的阴极。 相似文献
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研究在N2O/N2/NH3氛围中对Ni催化剂进行退火处理,旨在探讨退火处理对所生成碳纳米管的表面结构及其发射特性的影响.从表面结构及表面元素分析结果发现:Ni催化剂在N2O/N2/NH3氛围中退火处理之后,Ni催化剂的颗粒大小及催化剂的化学成分发生改变,进而影响所合成的碳纳米管的表面结构及场发射特性.扫描电镜显示:经过N2O退火前处理后,催化金属薄膜在成核时较易形成均匀性的金属颗粒,且金属颗粒较小.比较经N2O/N2/NH3氛围退火处理之后所合成的碳纳米管结果,经过N2O前处理可以有效抑制非品质碳的成长,使所成长出的碳纳米管数量最多、场发射电流最大.原因主要是因为N2O对催化剂镍膜金属前处理过程中分解出的氮原子及氧原子会活化及氧化催化剂Ni金属,并使所形成的Ni金属颗粒较小且更为均匀,造成表面型态上的显著改变,有助于使合成的碳纳米管场发射电流变大. 相似文献
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本文介绍了一种微图形化碳纳米管场发射阵列冷阴极,每个图形的直径仅为1μm,构成一个发射单元。制作工艺如下:首先在硅(100)基片上沉积氮化钛缓冲层,然后采用曝光工艺获得直径为1μm的胶孔阵列,沉积催化剂铁,最后采用直流等离子体增强化学气相沉积(DC-PECVD)生长直立的碳纳米管。并对17500个发射单元的阵列阴极进行了表面形貌表征及场发射特性测试。结果表明,碳纳米管阵列阴极的一致性较好;最低开启电场为1 V/μm;电场为17 V/μm时,测得的电流密度已达到90 mA/cm^2;发射电流为550μA时,在2.5 h内的波动小于5.6%。 相似文献
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采用电泳法将碳纳米管组装到电化学淀积的银台阵列上作为场发射阴极并研究了它的场发射特性.场发射特性测试结果表明:该阴极具有优异的场发射特性,开启电场为2.8V/μm,在应用电场为5.5V/μm时,发射电流密度达到1.7mA/cm2.具有优异的发射性能的原因可以归结到银台的边缘和银台类山状的表面增强了碳纳米管的场致电子发射.该阴极制备工艺简单、发射特性优异,且容易实现大面积制备,可以应用到大面积场发射显示器件中. 相似文献
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用玻璃粉作粘结剂制备碳纳米管厚膜及其场发射特性 总被引:2,自引:0,他引:2
研究了用涂敷法制备的碳纳米管(CNT)厚膜及其场发射特性,裂解法获得的碳纳米管与玻璃粉等混合、研磨,直接涂敷在Si基底上,经烧结后制成碳纳米管厚膜,二极结构测量的结果表明,碳纳米管厚膜有较低的开启电场(1.0~1.25V/μm),场强为5V/μm时,电流密度达到了50μA/cm^2.该工艺的烧结过程应控制好,加热时间稍长会使CNT厚膜的场发射性能很快下降,时间过长会使CNT处在厚膜表面之下,无法有效发射电子.浆料中的玻璃粉比例增大时,碳纳米管阴极的场发射性能会有所降低. 相似文献
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为了研究缓冲层对碳纳米管薄膜(CNTs)强流脉冲发射特性的影响,采用酞菁铁高温热解方法分别在镀镍和不镀镍硅基底上生长了碳纳米管薄膜(Ni-CNTs和Si-CNTs),镍层采用化学镀方法制备,强流脉冲发射特性采用二极结构在单脉冲下进行测试。实验发现,通过引入镍缓冲层,CNTs的强流脉冲发射能力显著增强。在峰值为~10.4 V/μm的脉冲场强下,平均开启电场强度从Si-CNTs的5.0V/μm下降到Ni-CNTs的4.3V/μm,而峰值发射电流和电流密度从Si-CNTs的70A和3.5 A/cm2升高到Ni-CNTs的162 A和8.1 A/cm2,Ni-CNTs的峰值电流比Si-CNTs提高了1.3倍。 相似文献
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Carbon nanotubes (CNTs) have high aspect ratio and have great potential to be applied as the field emission cathode because of its large field enhancement factor. In this work, a high performance carbon nanotube field emission cathode (CNTFC) was fabricated by using a composite plating method. The CNTs were purified by acid solutions and then dispersed in electrobath with nickel ions at temperatures of 60, 70, or 80 degrees C for the electroless plating process on glass substrate. The resulting CNT-Ni composite film has strong adhesion on the glass substrate. The degree of graphitization and the microstructure of the CNTFCs were studied by Raman spectroscopy and scanning electron microscopy. The field emission properties of the CNTFCs show a low turn-on electric field E(on) of about 1.2 V/microm, and a low threshold electric field E(th) of about 1.9 V/microm. Such a composite plating method could be applied to the fabrication of large area CNT field-emission displays. 相似文献
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利用电泳法将碳纳米管(CNTs)沉积在表面镀覆了50~150 nm Ti薄膜的Si基底表面,900℃真空退火后形成了具有良好场发射性能的Ti-CNTs薄膜阴极.利用X射线衍射和扫描电子显微镜对制备的Ti-CNTs薄膜进行了表征.结果表明,高温退火过程中,CNTs的C原子和基底表面的Ti原子发生化学反应,在CNTs与基底之间形成了导电性钛碳化物,明显改善了CNTs与基底之间的电导性和附着力等界面接触性能;与Si基底表面直接电泳沉积的CNTs薄膜相比,制备的Ti-CNTs薄膜的开启电场从1.31 V/μm降低到1.19 V/μm;当电场强度为2.50 V/μm时,Ti-CNTs薄膜的场发射电流密度可达13.91 mA/cm^2;制备的Ti-CNTs薄膜显示出改善的发射稳定性. 相似文献
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Carbon nanotubes (CNT) decorated with Ni and Ag performed by electroless plating, and the effect of Ni and Ag nanoparticles and coating distribution on field emission of CNT are studied. The chemical composition, microstructure of CNT/Ni and CNT/Ag nanocomposites are characterized by an energy dispersion X-ray spectroscope (EDS), a transmission electron microscope and a scanning electron microscope. The field emission properties of CNT/Ni and CNT/Ag cathodes are measured using a diode structure under a pressure of 10?5 Pa. The experimental results show that fine and well-dispersed metallic nanoparticles and discontinuous coating of Ni and Ag on the CNT surface can be obtained by electroless plating. Moreover, the enhanced field emission properties of CNT decorated with Ni and Ag can be obtained by lowering the work function of emitters and reducing the contact resistance between cathode and substrate. The field enhancement factors as high as 24264 of CNT/Ni and 25565 of CNT/Ag emitters can be improved by the distributed nano-sized Ni and Ag formed on the CNT surface. 相似文献
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电泳沉积碳纳米管的微波等离子体改性 总被引:1,自引:0,他引:1
采用电泳法在Si基底上沉积了碳纳米管(CNTs)薄膜, 并利用Ar微波等离子体对CNTs薄膜进行了改性处理, 研究了改性前后CNTs的微观结构和场发射性能. 高分辨透射电子显微镜(HRTEM)和拉曼光谱的表征结果表明, 等离子体改性明显改变了CNTs的微观结构, 形成了大量的管壁结构缺陷、纳米级突起和“针形”尖端; 场发射测试结果表明, CNTs经Ar等离子体改性处理后开启电场较改性前?略有增大, 等离子体改性10min的CNTs薄膜表现出最佳的场发射J-E特性, 阈值电场由改性前的3.12V/μm降低到2.54V/μm, 当电场强度为3.3V/μm时, 场发射电流密度由改性前的18.4mA/cm2增大到60.7mA/cm2. 对Ar微波等离子体改性增强CNTs薄膜场发射性能的机理进行了分析. 相似文献
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采用分散聚合工艺,以聚乙烯吡咯烷酮为分散剂,偶氟二异丁腈为引发剂,无水乙醇为分散介质,制备出粒径2.0μm、表面光滑、分散均匀的聚苯乙烯微球.将其进行表面磺化处理后运用化学镀工艺制备出了具有轻质高导电特性的聚苯乙烯/银复合粒子.对所制备的复合粒子进行了扫描电镜、红外光谱以及体积电阻率的测试.结果表明:所制备的复合粒子包覆均匀、导电性能良好;表面修饰提高了PS微球表面的电负性和亲水性并引入了磺酸基团,对PS微球表面镀银起到了重要作用;另外,随着PdCl2浓度和AgNO3/PS质量比的增加,复合粒子包覆完整性和导电性能都随之增加,最佳体积电阻率为1.61×10 -4Ω·cm. 相似文献
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衬底电极对丝网印刷CNT阴极场发射性能的影响 总被引:1,自引:0,他引:1
通过丝网印刷技术,将碳纳米管(carbon nanotube,CNT)浆料直接转移到CrCuCr薄膜衬底电极、掺Sn的In_2O_3(indium tin oxides,ITO)透明导电薄膜衬底电极和Ag浆导电厚膜衬底电极上,高温烧结后得到CNT阴极,并对CNT阴极进行表面形貌和场发射性能的研究.结果表明,不同衬底电极对CNT阴极场发射性能的影响不一样,CrCuCr薄膜衬底电极CNT阴极、ITO透明导电薄膜衬底电极CNT阴极及Ag浆厚膜导电衬底电极CNT阴极场发射的开启电场分别为0.99、2.05和2.46V/μm;当电场为3.0V/μm时,它们的亮度分别为2472、1889、587cd/m~2.CrCuCr薄膜衬底电极CNT阴极的场发射性能最优,ITO透明导电薄膜衬底电极CNT阴极次之,Ag浆厚膜导电衬底电极CNT阴极最差,并根据金属-半导体理论模型分析了原因. 相似文献
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Zinc oxide (ZnO) nanostructures were grown on vertically aligned carbon nanotubes (CNTs) using thermal chemical vapor deposition (CVD) to enhance the field emission characteristics. The shape of ZnO nanostructure was tapered. Scanning electron microscopy (SEM) image showed the ZnO nanostructures were grown onto CNT surface uniformly. The field electron emission of pristine CNTs and ZnO-coated CNTs were measured. The results showed that ZnO nanostructures grown onto CNTs could improve the field emission characteristics. The ZnO-coated CNTs had a threshold electric field at about 3.1 V/μm at 1.0 mA/cm2. The results demonstrated that the ZnO-coated CNT is an ideal field emitter candidate material. The stability of the field emission current was also tested. 相似文献
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Vertically aligned double-walled carbon nanotube (VA-DWCNT) arrays were synthesized by point-arc microwave plasma chemical vapor deposition on Cr/n-Si and SiO(2)/n-Si substrates. The outer tube diameters of VA-DWCNTs are in the range of 2.5-3.8?nm, and the average interlayer spacing is approximately 0.42?nm. The field emission properties of these VA-DWCNTs were studied. It was found that a VA-DWCNT array grown on a Cr/n-Si substrate had better field emission properties as compared with a VA-DWCNT array grown on a SiO(2)/n-Si substrate and randomly oriented DWCNTs, showing a turn-on field of about 0.85?V?μm(-1) at the emission current density of 0.1?μA?cm(-2) and a threshold field of 1.67?V?μm(-1) at the emission current density of 1.0?mA?cm(-2). The better field emission performance of the VA-DWCNT array was mainly attributed to the vertical alignment of DWCNTs on the Cr/n-Si substrate and the low contact resistance between CNTs and the Cr/n-Si substrate. 相似文献