醇硅比对太阳能玻璃用多孔SiO2减反膜性能的影响

采用溶胶-凝胶工艺在碱催化条件下制备了多孔结构的纳米SiO2薄膜,研究了不同醇硅比对溶胶体系的粒度分布、薄膜折射率以及透过率的影响。用纳米粒度分析仪测试了溶胶的颗粒分布,用紫外-可见-近红外分光光度计、椭偏仪、原子力显微镜(AFM)、扫描电子显微镜(SEM)测试了薄膜的光学性能、折射率、膜厚和显微形貌等。结果表明:随着醇硅比的增大,溶胶体系粘度下降,凝胶时间延长,颗粒度下降,折射率有升高的趋势;制备的增透玻璃膜层折射率为1.24,可见光透过率达到98.22%。     

宽谱增透双层TiO2-SiO2/SiO2薄膜的制备与性能

采用溶胶-凝胶法制备了双层TiO_2-SiO_2/SiO_2薄膜,调控了底层薄膜的折射率及双层薄膜不同的厚度匹配,研究了在不同厚度匹配下薄膜的光学性能。通过场发射扫描电子显微镜、椭偏仪、紫外-可见-红外分光光度计研究了薄膜的微观结构、厚度、折射率和光学透过率。研究表明:以TiO_2与SiO_2混合溶胶镀膜获得了折射率可调(1.5～2.0)的薄膜,在TiO_2-SiO_2层与SiO_2层的厚度分别约为160 nm、90 nm时获得了光学性能较优的薄膜,薄膜在光学宽谱380～1 100 nm范围内表现出明显的增透效果,可见光最高透过率可达97.5%,宽谱平均透过率为93.9%。     

纳米WO3薄膜的制备及其光学性能研究

以钨酸钠为原料，采用溶胶技术结合浸渍镀膜方法制备出WO3薄膜，利用透射电子显微镜、紫外-可见分光光度计、X射线衍射仪对薄膜的性质进行了研究。实验结果表明：草酸浓度的大小对产物粒径和紫外-可见透过光谱特性均有影响，随着草酸浓度的增大，产物的粒径减小，在可见光附近的透过率增大。热处理温度对产物的光透过性有影响，处理温度越高，光透过率越大。     

碱性条件下多孔SiO2增透膜的结构控制

以正硅酸乙酯为无机前躯体,在碱性条件下,采用溶胶-凝胶技术,用浸渍法提拉工艺制备了二氧化硅透明多孔薄膜.详细研究了催化剂的含量对溶胶及膜层性能的影响.利用Netzsch热分析仪研究了干凝胶在干燥过程中的热稳定性,用扫描电子显微镜(SEM)对样品薄膜的形态结构进行了表征以及用分光光度计考察了薄膜的增透性能.结果表明,氨用量的增加对溶胶黏度的影响不大,但缩短了溶胶达到最佳涂膜效果的陈化时间;随着氨水加入量的增加,SiO2颗粒的粒径增大;掺入有机添加剂N,N-二甲基甲酰胺可以提高薄膜的性能,有效抑制颗粒生长;氨水催化制备的薄膜透过率相对较高,膜层峰值在640～690nm范围内透射率达99%以上.     

用纳米压痕法研究玻璃表面复合薄膜的力学性能

采用溶胶凝胶法在玻璃基体上制备了CeO2-TiO2单层膜、TiO2-SiO2单层膜和CeO2-TiO2/TiO2-SiO2双层膜,采用纳米压痕和划痕法对薄膜的机械性能(纳米硬度、弹性模量、临界载荷、摩擦系数)进行了分析.实验结果表明,双层膜与玻璃基体的附着力以及弹性模量、硬度等指标均大于单层膜,由TiO2-SiO2组成的内层,对强化附着力起到了关键作用.     

Fe/Ce氧化物纳米玻璃薄膜的制备及其性能研究

采用柠檬酸溶胶-凝胶法制备了含有铁离子和铈离子的溶胶,并用浸渍一提拉法和热处理工艺在玻璃表面镀制了Fe/Ce氧化物薄膜.测试了镀膜玻璃从紫外光到近红外光的透过率和反射率,对薄膜的厚度、结合力、成分和相结构进行了分析.结果表明,Fe/Ce氧化物玻璃薄膜与基体结合牢固,晶粒处于纳米量级,能够屏蔽大量的紫外光,对红外光具有低的透过率,在可见光具有较高的透过率.当Fe/Ce金属元素配比为1:3时,得到的薄膜光选择透过性能最佳,此时薄膜紫外光透射比仅为3.6%,可见光透射比为72.8%,太阳能透射比为60%,光选择性透过系数可达1.2,具备优良的滤紫外功能和一定的隔热能力.     

不同过渡层对PMMA基底沉积ZAO薄膜特性的影响

采用磁控溅射技术,分别使用SiO_2、SiON、Al2O_3、AlON作为过渡层,在有机玻璃(PMMA)基底上制备了ZAO薄膜。利用紫外-可见光谱仪、X射线衍射仪(XRD)、原子力显微镜(AFM)和划痕仪对不同过渡层上制备的ZAO膜层的光电特性、薄膜结构、表面形貌及附着力进行了研究。结果表明,不同的过渡层对400~800nm波长范围内的光的透过率影响不大,在不同过渡层上制备的ZAO薄膜均展现了c轴择优取向。过渡层的添加不仅提高了ZAO薄膜的表面粗糙度和电阻,而且进一步提升了ZAO薄膜与PMMA基底的附着力。     

硅靶中频反应磁控溅射二氧化硅薄膜的特性研究

报道了中频双靶反应磁控溅射制备二氧化硅（SiO2)薄膜的装置、工艺及薄膜特性。对制备的SiO2薄膜的化学配比和元素化学态进行了SAM和XPS分析，测试了膜层对钠离子（Na^ )阻挡性能、光学折射率和可见光的透过率。研究表明作者开发的中频双靶反应磁控溅射沉积SiO2薄膜的设备和工艺可以高速率、大面积制备高质量的SiO2膜。     

溶胶—凝胶法制备TiO2—CeO2薄膜

本文报道了用溶胶－凝胶法制备TiO2-CeO2薄膜的工艺过程及所制备薄膜的性能，研究了在不同Ce/Ti比及催化条件下浸涂液的成膜能力，胶凝过程以及薄膜的物相和光学性能。结果表明，在浸涂液中加入水或碱会使浸涂液迅速凝胶，而加无机盐会促进老化过程。浸涂液的水解－凝胶过程对薄膜的透过率、表面形貌有显著影响，随Ce/Ti比增大，浸涂液的成膜能力变坏，而薄膜的紫外吸收增大。     

隔板玻璃表面宽光谱增透膜的制备与性能

利用溶胶-凝胶提拉方法在隔板玻璃表面涂制得到由TiO2与SiO2组成的λ/2-λ/4型宽光谱增透膜。通过溶胶粘度、凝胶时间及红外光谱等研究了TiO2涂膜溶胶的稳定性与相应膜层性能，测试了双层增透膜的透过率、抗高能氙灯辐照性能及使用性能等。结果表明，控制合适的原料配比、降低薄膜烘烤升温速率，可得到适于大面积涂膜的稳定TiO2溶胶，有效改善TiO2膜层质量；隔板玻璃表面增透膜在450-900nm光谱范围内平均透过率高达约98％，使“神光-Ⅱ”第九路主放大器的实际增益提高5．5％-6．5％且具有良好的抗高能氙灯辐照性能。     

Study of Photosensitive Dry Films Absorption for Printed Circuit Boards by Photoacoustic Technique

In this work, the study of photosensitive dry-type films by photoacoustic technique is proposed. The dry film photoresist is resistant to chemical etching for printed circuit boards such as ferric chloride, sodium persulfate or ammonium, hydrochloric acid. It is capable of faithfully reproducing circuit pattern exposed to ultraviolet light (UV) through a negative. Once recorded, the uncured portion is removed with alkaline solution. It is possible to obtain good results in surface mount circuits with tracks of 5 mm. Furthermore, the solid resin films are formed by three layers, two protective layers and a UV-sensitive optical absorption layer in the range of 325 nm to 405 nm. By means of optical absorption of UV–visible rays emitted by a low-power Xe lamp, the films transform this energy into thermal waves generated by the absorption of optical radiation and subsequently no-radiative de-excitation occurs. The photoacoustic spectroscopy is a useful technique to measure the transmittance and absorption directly. In this study, the optical absorption spectra of the three layers of photosensitive dry-type films were obtained as a function of the wavelength, in order to have a knowledge of the absorber layer and the protective layers. These analyses will give us the physical properties of the photosensitive film, which are very important in curing the dry film for applications in printed circuit boards.     

Optical performance of extreme ultraviolet lithography mask with an indium tin oxide absorber

In this study, we propose a new extreme ultraviolet (EUV) binary mask with an indium tin oxide (ITO) absorber. The optical constant of ITO film at 13.5 nm wavelength in the EUV regime was determined by means of X-ray reflectivity measurements and the chemical composition was determined using Rutherford backscattering spectrometry. The reflectance of a binary mask with an ITO absorber layer at various thicknesses was also measured to investigate the optical performance in the EUV regime. It was found that the extinction coefficient of ITO film is higher than that of a typical absorber layer, TaN, and that the reflectance of the ITO absorber in the binary mask at a wavelength of 13.5 nm is reduced to 0.62% at a thickness of 45 nm. Therefore, it is expected that the ITO film can be employed as a thin absorber of a binary mask to reduce the geometrical shadow effect in extreme ultraviolet lithography.     

硬脂酸对CeO2纳米粒子的表面修饰研究

利用表面修饰法合成了硬脂酸修饰的 CeO2 纳米粒子,采用透射电子显微镜(TEM)观察了经表面修饰的CeO2 纳米粒子的形貌及分散性,并采用红外光谱(IR)、紫外可见分光光度计等对修饰的CeO2 纳米粒子进行了表征。结果表明:表面修饰剂硬脂酸与 CeO2 纳米粒子表面之间发生了化学键合作用;修饰后的CeO2 纳米粒子表面存在疏水有机基团,阻隔了 CeO2 纳米粒子的团聚,起到了分散作用;同时,修饰后的CeO2 纳米粒子在苯乙烯中的稳定性得到了提高。并且获得了硬脂酸的修饰量与CeO2 纳米粒子的最佳配比。     

Preparation of CuGaSe2 absorber layers for thin film solar cells by annealing of efficiently electrodeposited Cu-Ga precursor layers from ionic liquids

CuGaSe₂ absorber layers were prepared on molybdenum substrates by electrochemical codeposition of copper and gallium and subsequential annealing in selenium vapour. The electrodeposition was made from a deep eutectic based ionic liquid consisting of choline chloride/urea (Reline) with a plating efficiency of over 85 %. The precursor film composition is controlled by the ratio of the copper to gallium fluxes under hydrodynamic conditions and by the applied deposition potential. X-ray diffraction reveals CuGa₂ alloying during the electrodeposition and CuGaSe₂ formation after annealing. Photoluminescence (PL) and photocurrent spectroscopy revealed the good opto-electronic properties of the CuGaSe₂ absorber films. The absorber layers have been converted to full devices with the best device achieving 4.0 % solar conversion efficiency.     

聚乙烯醇复合薄膜的抗紫外线性能

目的研究聚乙烯醇(PVA)复合薄膜(添加紫外线阻隔剂)的紫外线透过率和透明性能。方法将不同种类、不同质量分数的紫外线阻隔剂与PVA原料混合制备复合薄膜,检测其紫外线透过率、透光率、雾度。结果添加有机紫外线吸收剂UV-284后,薄膜能够有效阻隔大部分紫外线,但影响薄膜的外观,复合薄膜呈黄色。无机的紫外线阻隔剂在PVA薄膜中容易发生颗粒团聚,当Nano-Ti O2的质量分数为2.5%时,复合薄膜的平均紫外线透过率达到2%左右,若再增加质量分数则紫外线透过率变化不大。结论紫外线阻隔剂有效降低了PVA薄膜的紫外线透过率,但同时复合薄膜的透光率降低,雾度上升。综合比较,PVA薄膜中添加Nano-Ti O2的紫外线阻隔效果,比加入相同质量分数的UV-284或Nano-Zn O的复合薄膜要好。     

Influence of an additional carbon layer at the back contact-absorber interface in Cu(In,Ga)Se2 thin film solar cells

For paste-coated Cu(In,Ga)Se₂ (CIGS) absorber layers used for thin film solar cells one often gets a residual carbon layer between back contact and absorber layer. We investigate the influence of this layer on the solar cells’ performance with co-evaporated CIGS absorbers and find a beneficial effect. The power conversion efficiencies of thin chalcopyrite absorber layers are often limited by the influence of back contact recombination. It is assumed that the carbon layer between the back contact and the absorber layer helps lower this recombination and allows higher open circuit voltages and thus higher conversion efficiencies.     

Design of a perfect black absorber at visible frequencies using plasmonic metamaterials

The design and fabrication of a plasmonic black absorber with almost 100% absorbance spanning a broad range of frequencies from ultraviolet (UV) to the near infrared (NIR) is demonstrated. The perfect plasmonic absorber is achieved by a combination of a metal film with suitable metal/dielectric nanocomposites. Our fabrication technique is simple, versatile, cost-effective, and compatible with current industrial methods for solar absorber production.     

Control of metal salt ratio and MoS2 layer thickness in a Cu2ZnSnS4 thin film solar cell

Cu₂ZnSnS₄ (CZTS) absorber layers were prepared from copper acetate, zinc acetate, tin chloride, and thiourea in a solution of methanol, ethylenediamine, and ethanolamine using a sol–gel spin-coating method. Sol–gel precursor solutions were prepared with different metal salt ratios, and the effects on film growth, optical properties, and crystal properties of CZTS films were investigated. In addition, the role of sulfurization temperature on grain size of CZTS and formation of the MoS₂ layer at the CZTS and Mo interface were investigated. By changing the metal salt ratio in the precursor solution, a Zn-rich and Cu-poor condition in the CZTS film was obtained. By preparing Zn-rich and Cu-poor CZTS film with a thinner MoS₂ layer at a lower sulfurization temperature, the CZTS cell efficiency was improved, and a conversion efficiency of 1.22 % was obtained.     

Reaktives Magnetronsputtern von Dünnschichtsolarzellen

Reactive Magnetron Sputtering of Thin Film Solar Cells We show that reactive magnetron sputtering is well suited to deposit CuInS₂‐thin film absorber layers of high electronic quality. Using metallic targets and substrate temperatures below 500 °C, compact films with grain sizes in the micrometer range can be obtained. The structural and electronic properties of these layers are comparable to CuInS₂ thin films prepared by a 2‐step sulfurization process, which is being commercialized at present. In particular, the reactively sputtered films show minority carrier diffusion lengths larger than the layer thickness (≈ 2μm). This results in solar cells with conversion efficiences larger than 10 %, comparable to the best conversion efficiencies for CuInS₂‐solar cells obtained from other deposition processes. These results are promising for the potential application of magnetron sputtering as a large area deposition process for absorber layers in thin film solar cells.     

电子束蒸发沉积制备高度晶体取向的CeO2薄膜

为了得到CeO2为埋层的新型SOI(Silicon On Insulator)材料,采用电子束蒸发沉积及后期退火处理的方法制备得到了高度(111)、(311)晶体取向的CeO2薄膜,为进一步外延制备SOI材料打下了良好的基础.同时,从热力学角度就退火对CeO2薄膜晶体取向的影响机理进行了初步的探讨.由于CeO2(11)、(311)面为密排面和次密排面,在结晶化过程中所需克服的能垒最低和次低,所以,退火后形成了(111)、(311)结构的CeO2薄膜.