低温烧结AlN陶瓷的微结构和热导率

采用CaF2，Y2O3和Li2CO3做添加剂，在低温下制备了高热导率的AlN陶瓷，通过SEM，TEM和XRD研究了AlN陶瓷在烧结过程中微结构及晶格常数的变化及其对热导率的影响。研究发现，当使用CaF2-Y2O3做添加剂时，液相对晶粒浸润性较差。不利于AlN晶格的纯化。而添加Li2O-CaF2-Y2O3的AlN陶瓷在烧结温度之前已经完成了液相的重新分布，液相与AlN晶粒之间有较好的浸润性，这促进了AlN陶瓷的致密化和AlN晶格的纯化，有利于获得较高的热导率。     

热压烧结AlN(Y_2O_3)陶瓷热导率的温度关系

采用热压烧结技术,以Y2O3为烧结助剂制备AlN陶瓷。闪光法测试AlN陶瓷在室温~200℃的温度关系。结果表明,AlN陶瓷热导率随温度升高而降低;气孔对AlN陶瓷热导率随温度变化的速率有抑制作用,气孔率越小(致密度越高),热导率对温度变化越敏感;AlN陶瓷钇铝酸盐晶界相含量对热导率随温度变化的速率有促进作用,钇铝酸盐含量越高,热导率对温度变化越敏感。     

Li2O对低温烧结AlN陶瓷热导率的影响

使用CaF2,Y2O3和Li2Co3做添加剂，在1650℃的低温下制备出热导率高于170W/m.K的AlN陶瓷，通过使用SEM，TEM和XRD研究了AlN陶瓷在烧结过程中微结构与晶格参数的变化，并讨论了其对热导率的影响，研究发现，当使用CaF2-Y2O3做添加剂时，液相对晶粒浸润性较差，不利于AlN晶格的纯化，AlN热导率的增加主要来自于致密度的提高，而Li2O的加入则改善了液相与AlN晶粒的浸润性，从而促进了AlN晶格的纯化，有利于获得较高的热导率。     

晶界相和晶界对AlN陶瓷热导率的影响

本文研究了掺杂CaO-Y2O3热压烧结和常压烧结AlN陶瓷的晶界相及其产生过程和除氧机制；分析了峡谷种烧结工艺烧制的AlN陶瓷的晶界成份测定不同晶界相含量和晶界成份对应的AlN陶瓷的热导率。     

氮化铝陶瓷的热导率研究进展

本文介绍了影响Ａ１Ｎ陶瓷热导率的各种因素及提高热导率的措施;报道了最新的低温烧结研究动向。     

AlN陶瓷热导率影响因素的研究

基于AlN陶瓷的导热机理，从显微结构、材料组成、工艺因素三方面来对AlN热导率的影响进行了探讨。AlN高热导率取决于AlN晶间良好接触、第二相含量少呈孤岛状分布以及低气孔率的显微结构，而材料组成、制备工艺的优化是为了具有良好显微结构的AlN陶瓷得以实现和改善。     

高压热处理对AlN陶瓷显微结构及导热性能的影响

热处理是AlN陶瓷调整结构、改善性能的有效手段.利用国产六面顶压机,在5.0GPa高压条件下,对高压烧结制备的AlN(Y2O3)陶瓷进行了热处理,研究了高压热处理对AlN陶瓷显微结构及导热性能的影响.结果表明:经5.0GPa/970℃/2h高压热处理后的AlN陶瓷材料与未热处理的试样相比,晶粒尺寸显著增大,晶粒形状越发规整,第二相均位于晶界处或者三角晶界区域,热导率达到了173.2W/(m.K),是未经过热处理试样的2.2倍.但是,将高压热处理时间延长到4h,AlN陶瓷的气孔增大,出现了反致密化现象,热导率也降低到80.9W/(m.K).     

晶界相和晶界对AlN陶瓷热导率的影响

本文研究了掺杂CaO Y2 O3热压烧结和常压烧结AlN陶瓷的晶界相及其产生过程和除氧机制 ;分析了两种烧结工艺烧制的AlN陶瓷的晶界成份 ;测定了不同晶界相含量和晶界成份对应的AlN陶瓷的热导率     

微波低温烧结制备氮化铝透明陶瓷

微波烧结(Microwave Sintering)是一种新型、高效的烧结技术, 具有传统烧结技术无可比拟的优越性. 本文在不添加任何烧结助剂的前提下, 采用高纯微米级氮化铝(AlN)粉, 在1700℃/2h的微波低温烧结工艺条件下制备出透明度较高的AlN透明陶瓷. 分析结果表明, 采用微波低温烧结工艺制备的AlN透明陶瓷晶粒尺寸细小(<10μm), 晶粒发育完善且分布均匀, 晶界平直光滑且无第二相分布, 从而证明用微波烧结可以实现AlN透明陶瓷的低温烧结.     

氮化铝陶瓷的热导率研究进展

本文介绍了影响 Al N陶瓷热导率的各种因素及提高热导率的措施 ;报道了最新的低温烧结研究动向。     

探针法测量低温下猪主动脉导热系数研究

低温下导热系数测定对生物器官的低温保存、低温外科医学及数值模拟计算至关重要.在分析探针法测量原理的基础上,用探针法对低温下猪主动脉的导热系数进行了测量研究.实验表明探针在用甘油和蒸馏水进行标定后,可以方便准确地测量-90～-35℃温区下猪主动脉的导热系数.     

Low temperature thermal conductivity of aluminum alloy 5056

The thermal conductivity of 5056 aluminum alloy was determined from 4.2 K to 120 K using a differential steady-state method. This method has been implemented in a low temperature cryostat using a Gifford–McMahon cryocooler as heat sink. The thermal conductivity of the 5056 H39 aluminum alloy was determined since it was under consideration as a part of a thermal link for the Planck research satellite. As expected, below 10 K the thermal conductivity is exclusively given by the electron-defect scattering term. At higher temperature, the other terms from the electronic and the lattice contributions come into play but the electronic thermal conductivity term is still dominant. A workable fit, based on theory, is presented and can be used up to 300 K. Our measurements are compared with data at lower temperature and available fits from the literature.     

Evaluation of thermal conductivity from temperature profiles

A new dynamic technique for the measurement of thermal conductivity is being developed at IMGC. The experiment consists in bringing the specimen to high temperatures with a current pulse and in measuring the temperature profiles during the free cooling period. Different techniques can be used to extract the information on thermal conductivity from the profiles. The numerical computation of thermal conductivity from the experimental temperature profiles in absolute space is possible, but it is difficult and cumbersome because one must know and take into the account the exact position of the infinitesimal elements of the specimen in different profiles. Computations in tube-space (a fictitious space where no thermal expansion occurs) are simpler and lead to less complex numerical computations. Complementary techniques to evaluate thermal conductivity as a function of temperature or at constant temperature are presented with a discussion of advantages and disadvantages of each method. Computer simulations have tested the precision of the complex software. Numerically generated temperature profiles from known thermophysical properties have been obtained and thermal conductivity has been recomputed from the profiles. The relative difference using different computational approaches and different fitting functions is always less than 0.1%.Paper presented at the Third Workshop on Subsecond Thermophysics, September 17–18, 1992, Graz, Austria.     

国产石墨薄膜低温导热系数测量

在90-350K温度范围内,设计了1套实验装置,用以测量一种国产石墨薄膜的导热系数.介绍了实验装置的结构和原理,以及相关的数据处理方法.最终利用该装置得出了石墨薄膜导热系数与温度的关系.结果表明,该石墨薄膜在低温下可以作为铜的理想替代材料.     

SPS制备AlN/BN复相陶瓷及其性能优化

采用放电等离子烧结技术(SPS),在1750～1850℃烧结制备出兼顾高热导率和优良可加工性能的AlN/BN复相陶瓷.结果表明,通过调节添加剂Y2O3的加入量,能够显著抑制BN对材料热传导性能的劣化作用,BN含量为25%(体积分数)时,热导率仍能达到120W/(m·K),与AlN单相陶瓷相比仅下降18.9%.在SPS制备条件下,添加不同量的Y2O3导致不同组成的Al-Y-O晶界相,随着Y2O3的增加,晶界相在烧结过程中大量挥发,致使Al-Y-O残留量减少,优化了材料的显微组织,有效地提高热传导性能.     

高导热率及低介电常数的AlN/PI纳米复合薄膜研究

通过将纳米氮化铝加入到原位聚合而成的聚酰亚胺中以提高纳米复合薄膜的导热系数.采用KH550偶联剂对氮化铝粒子表面进行物化处理,以提高有机-无机两相界面的结合力.采用SEM、TGA等对材料的微观结构、热性能等进行了研究.结果显示无机粒子在纳米复合薄膜中分散均匀,并在保持较低的介电性能同时提高了复合材料的热稳定性和导热性能.这样的材料在电子封装材料和印刷线路板中具有很大的应用前景.     

Comments on the measurement of thermal conductivity and presentation of a thermal conductivity integral method

A discussion is presented regarding the significance of the spatial temperature gradient approximation normally used in thermal conductivity measurement. Examples are presented illustrating the magnitude of temperature differences allowed for conductivity integral (TCI) method of analysis is presented as an alternative method which totally eliminates the need to impose temperature difference restrictions on the measurement process, so long as other errors, such as radiative heat losses, do not become excessive.     

Low thermal conductivity and high porosity ZrC and HfC ceramics prepared by in-situ reduction reaction/partial sintering method for ultrahigh temperature applications

Porous ultra-high temperature ceramics(UHTCs) are potential candidates as high-temperature thermal insulation materials. However, high thermal conductivity is the main obstacle to the application of porous UHTCs. In order to address this problem, herein, a new method combining in-situ reaction and partial sintering has been developed for preparing porous Zr C and Hf C with low conductivity. In this process, porous Zr C and Hf C are directly obtained from ZrO_2/C and HfO_2/C green bodies without adding any pore-forming agents. The release of reaction gas can not only increase the porosity but also block the shrinkage. The asprepared porous Zr C and Hf C exhibit homogeneous porous microstructure with grain sizes in the range of 300–600 nm and 200–500 nm, high porosity of 68.74% and 77.82%, low room temperature thermal conductivity of 1.12 and 1.01 W·m~(-1) K~(-1), and compressive strength of 8.28 and 5.51 MPa, respectively.These features render porous Zr C and Hf C promising as light-weight thermal insulation materials for ultrahigh temperature applications. Furthermore, the feasibility of this method has been demonstrated and porous Nb C, Ta C as well as Ti C have been prepared by this method.     

Thermal conductivity of zirconia‐based ceramics for thermal barrier coating

Lowering the thermal conductivity of thermal barrier coatings used to protect blade and vane airfoils represents an important challenge for gas turbine designers and manufacturers. Dense zirconia‐based materials have been prepared by solid state reaction methods to determine their thermal properties up to 1000 °C. Partially stabilised zirconias having a thermal conductivity 40 % lower than the thermal conductivity of the most widely used system (ZrO₂‐8wt.%Y₂O₃) have been obtained.