Optical properties of transparent Dy doped Ba2TiSi2O8 glass ceramic

The Ba₂TiSi₂O₈ is a well known piezoelectric, ferroelectric and non-linear crystal. Nanocrystals of Ba₂TiSi₂O₈ doped with 1.5 Dy³⁺ have been obtained by thermal treatment of a precursor glass and their optical properties have been studied. X-ray diffraction patterns and optical measurements have been carried out on the precursor glass and glass ceramic samples. The emission spectra corresponding to the Dy³⁺: ⁴F_9/2 → ⁶H_13/2 (575 nm), ⁴F_9/2 → ⁶H_11/2 (670 nm) and ⁴F_9/2 → ⁶H_9/2 (757 nm) transitions have been obtained under laser excitation at 473 nm. These measurements confirm the incorporation of the Dy³⁺ ions into the Ba₂TiSi₂O₈ nanocrystals which produces an enhancement of luminescence at 575 nm. At this wavelength has been demonstrated a maximum optical amplification around 1.9 cm⁻¹ (∼8.2 dB/cm).     

Tl2Ba2CaCu2O8 thin films on 2 in. LaAlO3(0 0 1) substrates

High quality Tl₂Ba₂CaCu₂O₈ (Tl-2212) superconducting thin films are prepared on both sides of 2 in. LaAlO₃(0 0 1) substrates by off-axis magnetron sputtering and post-annealing process. XRD measurements show that these films possess pure Tl-2212 phase with C-axis perpendicular to the substrate surface. The thickness unhomogeneity of the whole film on the 2 in. wafer is less than 5%. The superconducting transition temperatures T_cs of the films are around 105 K. At zero applied magnetic field, the critical current densities J_cs of the films on both sides of the wafer were measured to be above 2 × 10⁶ A/cm² at 77 K. The microwave surface resistance R_s of film was as low as 350 μΩ at 10 GHz and 77 K. In order to test the suitability of Tl-2212 thin films for passive microwave devices, 3-pole bandpass filters have been fabricated from double-sided Tl-2212 films on LaAlO₃ substrates.     

Study and fabrication of ZnNb2O6 thin films by sol-gel method

Zinc niobium oxide (ZnNb₂O₆) thin films were grown on ITO/glass substrate by sol-gel process. Microstructure and surface morphology of the ZnNb₂O₆ thin films have been studied by X-ray diffraction and scanning electron microscopy. Optical properties of the ZnNb₂O₆ thin films were obtained by UV-visible recording spectrophotometer. The dependence of the microstructure, optical transmittance spectra, optical band gap on annealing temperature was also investigated.     

Surface resistance of large-area Tl2Ba2CaCu2O8 thin films at microwave and millimeter wave frequencies measured by three noncavity techniques

The surface resistanceR _s of Tl₂Ba₂CaCu₂O₈ films fabricated on LaAlO₃ wafers up to 3 inches (7.6 cm) in diameter through a post-deposition anneal process was measured over the frequency range 5.55–94.1 GHz by the following techniques: 5.55 and 27.5 GHz high-temperature superconductor (HTS)-sapphire resonators, 10 GHz parallel plate resonator, and 94.1 GHz scanning confocal resonator.R _s was found to exhibit a quadratic dependence on frequencyf at 77 K:R _s f ^2.0±0.1. The highest-quality films yieldR _s =145±15 at 10 GHz and 77 K. Scanning confocal resonator mapping ofR _s across a 2-inch (5.1 cm) diameter wafer yielded a base value forR _s of 16±1 m at 77 K and 94.1 GHz (equivalent to 180±10 at 10 GHz) and good uniformity inR _s across the wafer. HTS-sapphire resonator measurements ofR _s for fifteen 1.2 cm square parts cut from a 3-inch diameter wafer yieldedR _s values scaled to 10 GHz of 196±10 at 80 K. Similar values were measured for Tl₂Ba₂CaCu₂O₈ films prepared on both sides of a 2-inch diameter wafer.Rs values at 10 GHz and 80 K of 147–214 were maintained over the course of 40 independent and successive deposition runs and corresponding anneals under nominally identical film fabrication conditions. Surface resistance at 5.55 GHz remained below 80 for maximum rf magnetic fields up to 85 Oe at 4.2 K and 7 Oe at 80 K, respectively. Results are compared with predictions of the two-fluid model. The relative advantages and disadvantages of the different techniques for measuring surface resistance are discussed.     

Ba2Ti9O20-Ba1.85Sm4.1Ti9O24 layered dielectric resonators with adjustable effective dielectric constant

The layered dielectric resonator structures composed of Ba₂Ti₉O₂₀ (BTO) and Ba_1.85Sm_4.1Ti₉O₂₄ (BSTO) ceramic pellets were introduced to design new microwave dielectric materials with adjustable dielectric constant between 50 and 70. Good combination of microwave dielectric properties (?_r,eff = 50 ~ 70, Qf = 11,700-19,100 GHz and τ_f = − 4.3 to − 1.5 ppm/°C) was obtained by the present approach, and such combination could be optimized by adjusting the volume fraction of BSTO and stacking scheme. For practical applications, the BTO and BSTO layers could be bonded by low-loss adhesive, and the effects of the adhesive on the microwave dielectric properties were limited.     

Cf-ZrW2O8/9621复合材料制备及碳纤维和ZrW2O8含量对其热膨胀的影响

热膨胀是影响复合材料性能和使用寿命的主要因素之一。为研究具有低/负热膨胀的复合材料,本文以碳纤维粉、ZrW₂O₈颗粒和环氧树脂为原料,采用模压法制备了C_f-ZrW₂O₈/9621环氧树脂基复合材料,研究了碳纤维粉和ZrW₂O₈颗粒含量对复合材料热膨胀行为的影响规律,并分析了不同温度区间内C_f-ZrW₂O₈/9621环氧树脂基复合材料热膨胀的变化规律。研究结果表明：在30～200℃范围内,当ZrW₂O₈颗粒含量不变时,随着碳纤维粉含量的增加复合材料的平均热膨胀系数逐渐降低,其中碳纤维粉含量增加到12%时,复合材料的平均热膨胀系数最低,为29.9×10^-6/℃,降低了约60%;当碳纤维粉含量不变时,ZrW₂O₈颗粒含量逐渐增加到12%时,复合材料的平均热膨胀系数呈现...     

Synthesis and characterization of Ca3Co4O9 thin films prepared by sol-gel spin-coating technique on Al2O3(001)

Ca₃Co₄O₉ thin films are deposited on Al₂O₃(001) substrates using a sol-gel spin-coating process. X-ray diffraction shows that the film exhibits a single phase of Ca₃Co₄O₉ with the (00l) planes parallel to the film surface. The temperature dependence of magnetic susceptibility showed as expected the existence of two magnetic transitions similar to those observed in bulk samples: a ferrimagnetic and a spin-state transition around 19 and 375 K, respectively. At 5 K the magnetization curves along the c-axis of the Al₂O₃(001) show that the remanent magnetization and coercive field are close to those obtained for films grown by pulsed laser deposition, which evidences the interest to use such an easy technique to grow complex thin films oxides.     

Preparation and characterization of Nb2O5-Al2O3 composite oxide formed by cathodic electroplating and anodizing

Al foil was coated with niobium oxide by cathodic electroplating and anodized in a neutral boric acid solution to achieve high capacitance in a thin film capacitor. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) revealed the niobium oxide layer on Al to be a hydroxide-rich amorphous phase. The film was crystalline and had stoichiometric stability after annealing at temperatures up to 600 °C followed by anodizing at 500 V, and the specific capacitance of the Nb₂O₅-Al₂O₃ composite oxide was approximately 27% higher than that of Al₂O₃ without a Nb₂O₅ layer. The capacitance was quite stable to the resonance frequency. Overall, the Nb₂O₅-Al₂O₃ composite oxide film is a suitable material for thin film capacitors.     

Thermo-optic properties of TiO2, Ta2O5 and Al2O3 thin films for integrated optics on silicon

The direct measurement of the thermo-optic coefficients of aluminium oxide, tantalum pentoxide and titanium dioxide thin films is presented. Using ellipsometry on monolithically integrated permutations of the layers of silicon, silicon dioxide and the material under test, allows the direct measurement of the overall thermo-optic coefficient accounting for thermally induced changes in the dielectric permittivity and density of the materials as well as the elasto-optic effect due to the non-matching thermal expansion coefficients of the different materials.     

Dielectric properties of sol-gel derived Ta2O5 thin films

The dielectric constant and the dielectric loss of tantalum pentoxide (Ta₂O₅) thin films, produced by sol-gel spin-coated process on Corning glass substrates, have been investigated in the frequency range of 20-10⁵ Hz and the temperature range of 183-403 K, using ohmic Al electrodes. The frequency and temperature dependence of relaxation time has also been determined. The capacitance and loss factor were found to decrease with increasing frequency and increase with increasing temperature. The activation energy values were evaluated and a good agreement between the activation energy values obtained from capacitance and dielectric loss factor measurements were observed.     

HREM surface profile images of Bi2Sr2CaCu2O8

Surface profile images of Bi₂Sr₂CaCu₂O₈ have been obtained using high-resolution electron microscopy. The cleaved (001) surface of the crystals terminates with a single Bi-O atomic layer. The modulated structure developed in this surface atomic layer was observed directly. The (hk0) surfaces were found to decompose in air into an amorphous coating layer. This coating layer was unlikely recrystallized into the original structure under electron beam irradiation. The amorphous layer on the (hk0) surface formed in pure Ar atmosphere was relatively thin and could be recrystallized into some secondary phases in which a Bi loss was observed. The original (001) surface might also be covered by an amorphous-like layer. This disordered layer could be recrystallized under electron beam irradiation into BiSr₂Ca₂Cu₃O₉, BiSr₂CuO₅, etc. which intergrow with the parent crystal perfectly on the (001) planes.The author thanks the EPSRC for financial support.     

Transport properties of textured Bi2Sr2CaCu2O8+y, thin films

Superconducting films of the high-T _c compound Bi₂Sr₂CaCu₂O_8+y , have been grown on (111)-oriented gadolinium gallium garnet substrates by a liquid-phase technique. The films show a very high degree of preferential orientation with thec-axis perpendicular to the substrates. The onset of the resistive transition was 85 K while zero resistance was obtained at 78 K. Results concerning the critical current properties of the films are described. Measurements of the paraconductivity effects on the electrical resistivity above the superconducting transition due to thermodynamic fluctuations are also reported.Supported by Ansaldo S.p.A Divisione Ansaldo Ricerche, Via Corso Perrone 25, I-16100 Genova, Italy.     

Vortex motion in coupled DyBa2Cu3O7/(Y0.6Pr0.4)Ba2Cu3O7 heterostructures

Multilayer structures containing 24 Å thick DyBa₂Cu₃O₇ layers, separated by 96 Å of an (Y_0.6Pr_0.4)Ba₂Cu₃O₇ alloy, are studied to investigate the effect of coupling on vortex dynamics. With the magnetic field perpendicular to theab plane, and as a function of the number of superconducting layers in the structure, we find that the activation energy for flux motion increases, first linearly, and then saturates. This linear increase is taken as evidence that pancake vortices belonging to different DyBa₂Cu₃O₇ layers are stacked and have a coupled motion. Above a characteristic number of superconducting layers,N _c , shear of the vortex structures becomes important and the thermally activated process only displaces a stack ofN _c pancake vortices, meaning that the vortex lattice is turning three dimensional. In these structures we findN _c to be 2 to 3.     

La2O3、Nd2O3、Y2O3对高岭石高温相变动力学的影响

利用综合热分析技术、X射线衍射(XRD)、傅里叶变换红外光谱(FT-IR)和扫描电镜(SEM)研究了La_2O_3、Nd_2O_3、Y_2O_3对高岭石高温条件下转变成莫来石过程的作用,并采用Kissinger方程、Ozawa方程以及JMA修正方程(Ⅰ)和(Ⅱ)分析了La_2O_3、Nd_2O_3、Y_2O_3对高岭石高温相变动力学的影响。结果表明:3种稀土氧化物的掺入对高岭石的相变动力学参数产生了影响,相变活化能和频率因子与未掺入稀土氧化物的高岭石相比有所降低,析晶方式则未发生变化,均属于体积晶化。对比掺入3种稀土氧化物的高岭石相变活化能和频率因子可以看出,Y_2O_3对于高岭石高温条件下相变的促进作用最为明显,相变活化能最低。稀土氧化物对于高岭石高温相变产物影响不大,主晶相为莫来石相,次晶相为方石英相,但稀土氧化物的掺入使得方石英相的结晶度明显提高。     

Preparation of CuAlO2 and CuCrO2 thin films by sol-gel processing

CuAlO₂ and CuCrO₂ thin films were prepared by sol-gel processing and subsequent thermal treatment in air and inert gas atmosphere. Resistivities of 700 Ω cm and 60 Ω cm with optical transmissions of 65% and 32% were achieved respectively. The crystallization temperature of 700 °C allows the preparation of CuCrO₂ on borosilicate glass. P-type conductivity was verified by Seebeck measurements and a transparent heterostructure including p-CuCrO₂ showed rectifying behavior.     

Microstructural study of YBa2Cu3O7/SrTiO3/YBa2Cu3O7 heteroepitaxial trilayer films grown on (100) SrTiO3 substrates

Detailed transmission electron microscopic study has been carried out on heteroepitaxial YBa₂Cu₃O₇/SrTiO₃/YBa₂Cu₃O₇ trilayer thin films grown on (100)SrTiO₃ substrates prepared by DC and RF magnetron sputtering. The microstructural results showed the existence of somea-axis-oriented YBCO grains 20–90 nm wide in thec-axis-oriented YBCO matrix. Some of thea-axis grains in the lower YBCO thin film layer have protruded into the above SrTiO₃ layer, which may cause short circuit between the two YBCO superconducting layers. This is unsuitable for the application of trilayer thin films for microelectronic devices. The defects on the surface of the substrates would also influence the growth quality of the YBCO thin films.     

等离子体电解氧化法制备多孔TiO2/V2O5复合物膜层及其增强光催化产氢活性

较差的光催化产氢效率极大地阻碍了TiO₂光催化剂的工业化应用。为此,本文在含有NH₄VO₃的磷酸盐溶液中,采用等离子体电解氧化(PEO)法制备了多孔TiO₂/V₂O₅复合膜光催化剂,通过扫描电子显微镜(SEM)、能谱仪(EDS)、X射线衍射(XRD)、X射线光电子谱(XPS)和紫外可见漫反射光谱(UV-Vis DRS)对其组成、结构及光吸收性质进行了表征,并采用气相色谱评价了薄膜催化剂的光催化产氢性能,研究了电解液中NH₄VO₃含量对膜的结构、组成和光催化产氢性能的影响。结果表明:复合膜催化剂主要由锐钛矿和金红石型TiO₂组成,具有微孔结构,V₂O₅主要以无定形形式存在于膜中,与TiO₂有很强的相互作用,影响TiO₂的晶面间距。研究发现,元素V抑制了TiO₂的结晶和金红石型TiO₂的形成,扩大了薄膜的光学吸收范围。针对Na₂S+ Na₂SO₃溶液中的光催化产氢性能的研究显示,在质量浓度为1 g/L NH₄VO₃的电解液中制备的TiO₂/V₂O₅薄膜的光催化活性最高,优于近年来报道的其他光催化剂。光催化重复实验表明,该复合膜催化剂具有较高的稳定性和较为恒定的光催化活性。     

Microstructure and electrical properties of Al2O3-ZrO2 composite films for gate dielectric applications

Al₂O₃-ZrO₂ composite films were fabricated on Si by ultrahigh vacuum electron-beam coevaporation. The crystallization temperature, surface morphology, structural characteristics and electrical properties of the annealed films are investigated. Our results indicate that the amorphous and mixed structure is maintained up to an annealing temperature of 900 °C, which is much higher than that of pure ZrO₂ film, and the interfacial oxide layer thickness does not increase after annealing at 900 °C. However, a portion of the Al₂O₃-ZrO₂ film becomes polycrystalline after 1000 °C annealing and interfacial broadening is observed. Possible explanations are given to explain our observations. A dielectric constant of 20.1 is calculated from the 900 °C-annealed ZrO₂-Al₂O₃ film based on high-frequency capacitance-voltage measurements. This dielectric characteristic shows an equivalent oxide thickness (EOT) as low as 1.94 nm. An extremely low leakage current density of ∼2×10⁻⁷ A/cm² at a gate voltage of 1 V and low interface state density are also observed in the dielectric film.     

Capacitance-voltage and leakage-current characteristics of sol-gel-derived crystalline and amorphous SrTa2O6 thin films

SrTa₂O₆ (STA) is a promising high-dielectric-constant (ε) material. In this study, STA thin films were fabricated using the sol-gel method. The capacitance-voltage and leakage-current characteristics of crystalline and amorphous STA thin-film capacitors were investigated. STA thin films crystallized at an annealing temperature of 800 °C. Crystalline STA thin films exhibited a high ε of about 110, whereas amorphous STA thin films showed a much lower ε of about 26-41. However, amorphous STA thin films had a much more constant capacitance as a function of voltage. Of the amorphous thin films, the one annealed at 700 °C had the highest ε of about 41, the lowest leakage current of 10^− 8 A/cm², and a very constant capacitance as a function of voltage with a quadratic voltage-capacitance coefficient (α) of 27 ppm/V². The crystalline STA thin film had a negative α that was independent of frequency, which suggests that dipolar relaxation occurs and is responsible for the large change in the capacitance. The amorphous thin films had a positive α that decreased with increasing frequency, which implies that electrode polarization occurs.