共查询到19条相似文献,搜索用时 156 毫秒
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利用电学测试、正电子寿命谱和X射线衍射技术研究了原生和退火处理后InP单晶的空位和填隙缺陷.在原生掺铁半绝缘InP单晶中含有空位缺陷,这些空位产生深能级电学补偿缺陷,降低材料的电学性能.经高温磷化铁气氛下退火处理非掺InP制备的半绝缘材料,空位被充分抑制,却含有一定浓度填隙缺陷.根据实验结果分析了填隙和空位缺陷对掺铁半绝缘InP单晶材料电学性质和热稳定性的影响. 相似文献
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在富Te生长条件下,采用垂直布里奇曼法(vertical Bridgman method, VB)生长的部分碲锌镉(Cd1-xZnxTe, CZT)晶体内存在导电类型转变界面。为深入探讨碲锌镉晶体导电类型转变界面形成的原因,结合晶体导电类型和红外光谱透过率的测试结果与第一性原理的理论计算进行分析,结果表明,碲锌镉晶体内的导电类型转变界面是晶体生长过程中形成的Cd空位(VCd)缺陷与Cd间隙(Cdi)缺陷导致的。在富Te条件的生长过程中,Cd空位缺陷易于形成,碲锌镉晶体材料中含有大量的Cd空位缺陷,材料的导电型为p型。在晶体生长结束阶段的降温过程中,Cd原子会扩散至碲锌镉晶体中,促进了Cd间隙缺陷的形成,在碲锌镉晶体材料中形成Cd间隙缺陷,导致晶体材料的导电性转变为n型。 相似文献
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中子辐照氢气区熔硅单晶退火行为的正电子湮没研究 总被引:1,自引:0,他引:1
用正电子湮没寿命和多普勒加宽方法研究了中子辐照氢气区熔硅单晶的等时退火行为.观测到324±12ps的寿命组分是正电子在双空位湮没寿命,是主要的长寿命组分.450±14ps是正电子在四空位湮没寿命。324ps寿命组分在450℃附近退火消失后,它又以较高的强度在530—800℃的温度范围出现.对不同温度退火的晶体取得的基块寿命不是常数值而是随退火温度有规律的变化.这些异常的退火行为归结为中子辐照硅中所诱导的空位缺陷与氢的相互作用及其对晶格的影响. 相似文献
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InP中的深能级杂质与缺陷 总被引:2,自引:0,他引:2
综述了近年来关于InP中深能级缺陷和杂质的研究工作。讨论了深能级杂质及缺陷对InP材料性能的重要影响;介绍了深能级瞬态谱(DLTS)、光致发光谱(PL)、热激电流谱(TSC)、正电子寿命谱(PAS)、正电子深能级瞬态谱(PDLTS)等几种研究深中心的方法在研究InP时的某些特点;综合深能级缺陷和电学性质的测试结果,证明了半绝缘InP单晶材料的电学性能、热稳定性、均匀性等与材料中一些深能级缺陷的含量密切相关;分析了对掺铁和非掺退火两种半绝缘InP材料中深能级缺陷对电学补偿的影响;评述了对InP中的一些深中心所取得的研究成果和半绝缘InP的形成机理。 相似文献
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王海云 《南京邮电学院学报(自然科学版)》2008,(6):34-36
用正电子湮没寿命谱(PALS)方法对经过不同剂量γ辐照的n型6H—SiC内的缺陷进行研究。实验表明,辐照可以使样品内部产生单空位缺陷Vc。对实验中得到的寿命谱的变化进行分析发现,低剂量的γ辐照对n型6H—SiC有类似退火效应的作用。这些研究结果可以为n型6H—SiC的生产及其可能的应用提供有效的参考价值。 相似文献
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比较了掺Fe和非掺退火半绝缘(SI)InP材料中Fe杂质的分布,掺杂激活机理以及Fe原子与点缺陷的相互作用.原生掺Fe SI-InP中Fe的替位激活主要通过填隙-跳跃机制,但Fe原子易在位错周围聚集,与空位形成复合体缺陷,占据填隙位等,从而降低Fe的激活效率.在FeP2气氛下退火非掺InP获得的SI-InP材料中,Fe原子的激活主要通过扩散过程的"踢出-替位"机制.退火前材料中存在的In空位使Fe原子通过扩散充分占据In位,同时抑制了材料中深能级缺陷的形成.因此,这种SI-InP材料的Fe激活效率高、电学性能好. 相似文献
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比较了掺Fe和非掺退火半绝缘(SI)InP材料中Fe杂质的分布,掺杂激活机理以及Fe原子与点缺陷的相互作用.原生掺Fe SI-InP中Fe的替位激活主要通过填隙-跳跃机制,但Fe原子易在位错周围聚集,与空位形成复合体缺陷,占据填隙位等,从而降低Fe的激活效率.在FeP2气氛下退火非掺InP获得的SI-InP材料中,Fe原子的激活主要通过扩散过程的"踢出-替位"机制.退火前材料中存在的In空位使Fe原子通过扩散充分占据In位,同时抑制了材料中深能级缺陷的形成.因此,这种SI-InP材料的Fe激活效率高、电学性能好. 相似文献
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Vacancy and interstitial defects in as-grown and annealed semi.insulating(SI)InP single crystal have been studiedby using electrical measurement,positron lifetime spectroscopy and X-ray diffraction technique.As.grown Fe.doped SI.InP contains vacancy which gives rise to deep level compensation defects and deteriorates electrical property of the material.Vacaney is fully suppressed in SI material that is obtained by high temperature annealing undoped InP in iron phosphide ambient.A moderate concentration of interstitial exists in the annealed material.The influence of vacancy and interstitial on electrical property and thermal stability of SI-InP have been discussed based on the experimental results. 相似文献
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In this paper it is shown that the melt composition is a key parameter in the crystal growth of GaAs as it strongly affects
the concentration of deep electron levels as well as the electrical activity of the silicon atoms added to the melt in order
to get an-type material. Experimental data collected on several samples are included. The correlations between melt stoichiometry and
generation/annihilation of point defects as well as electronic properties are discussed considering the existing literature
references. 相似文献
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M. T. Umlor D. J. Keeble P. W. Cooke P. Asoka-Kumar K. G. Lynn 《Journal of Electronic Materials》1993,22(12):1405-1408
Variable energy positron annihilation measurements on as-grown and annealed GaAs grown by molecular beam epitaxy at temperatures
between 230 and 350°C have been performed. Samples were subjected to either isochronal anneals to temperatures in the range
300 to 600°C or rapid thermal anneals to 700, 800, and 900°C. A significant increase in the S-parameter was observed for all
samples annealed to temperatures greater than 400°C. The positron annihilation characteristics of the defect produced upon
annealing are consistent with divacancies or larger vacancy clusters. The concentration of as-grown and anneal generated defects
is found to decrease with increasing growth temperature. 相似文献
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《Microwave Theory and Techniques》1966,14(7):306-310
The attenuation, guide wavelength, and characteristic impedance of rectangular waveguides with one high conductivity semiconductor side wall have been derived for the case of propagating TE/sub NO/ modes. These properties can be interpreted in terms of the penetration of the microwave electric field into the semiconductor material by an amount of the same order as, but generally unequal to, the classical skin depth. These theoretical results are evaluated for the special case of an indium antimonide side wall in RG 138/U waveguide operating at 110 Gc/s. The calculated attenuation lengths and guide wavelengths for this case are of such magnitude that they can be measured with reasonable accuracy, thus illustrating the value of this technique for the measurement of the electrical properties of semiconductor materials at the higher microwave frequencies. 相似文献
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《Materials Science in Semiconductor Processing》2012,15(6):669-674
Studies on vacancy defects in Si, SiGe and Ge with positron annihilation spectroscopy are reviewed. The E-centers involving As and Sb in Si are identified and their thermal stability is studied in annealing experiments. In SiGe the influence of Ge on both the thermal stability of the E-center and its effect on the charge transitions of the E-center is reviewed. The positron annihilation specific defect parameters are determined for the divacancy and the monovacancy in Ge. 相似文献