共查询到20条相似文献，搜索用时 15 毫秒
1.
Natasha Gruginskie Federica Cappelluti Gerard J. Bauhuis Peter Mulder Erik J. Haverkamp Elias Vlieg John J. Schermer 《Progress in Photovoltaics: Research and Applications》2020,28(4):266-278
The effects of electron irradiation on the performance of GaAs solar cells with a range of architectures is studied. Solar cells with shallow and deep junction designs processed on the native wafer as well as into a thin‐film were irradiated by 1‐MeV electrons with fluence up to 1×1015 e−/cm2. The degradation of the cell performance due to irradiation was studied experimentally and theoretically using model simulations, and a coherent set of minority carriers' lifetime damage constants was derived. The solar cell performance degradation primarily depends on the junction depth and the thickness of the active layers, whereas the material damage shows to be insensitive to the cell architecture and fabrication steps. The modeling study has pointed out that besides the reduction of carriers lifetime, the electron irradiation strongly affects the quality of hetero‐interfaces, an effect scarcely addressed in the literature. It is demonstrated that linear increase with the electron fluence of the surface recombination velocity at the front and rear hetero‐interfaces of the solar cell accurately describes the degradation of the spectral response and of the dark current characteristic upon irradiation. A shallow junction solar cell processed into a thin‐film device has the lowest sensitivity to electron radiation, showing an efficiency at the end of life equivalent to 82% of the beginning‐of‐life efficiency. 相似文献
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Shin‐ichiro Sato Hitoshi Sai Takeshi Ohshima Mitsuru Imaizumi Kazunori Shimazaki Michio Kondo 《Progress in Photovoltaics: Research and Applications》2013,21(7):1499-1506
This paper reports temperature influence on radiation degradation of hydrogenated amorphous silicon (a‐Si : H) solar cells. Degradation behaviors of a‐Si : H solar cells irradiated with protons at 331 K are compared with that at 298 K (room temperature). Variations with time in the post‐irradiation electrical properties are also investigated. It is found that the radiation degradation of the electrical properties at 331 K is significantly smaller than that at room temperature. Also, all the electrical properties (short‐circuit current, open‐circuit voltage, output maximum, and fill factor) recover with time after irradiation even at room temperature. The characteristic time of thermal annealing of short‐circuit current is larger as the temperature is higher. These results indicate that temperature during irradiation and elapsed time from irradiation to measurement is an important parameter for radiation degradation of a‐Si : H solar cells. Therefore, these parameters should be controlled in conducting the ground radiation tests. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献
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Dong‐Won Kang Yuki Takiguchi Porponth Sichanugrist Makoto Konagai 《Progress in Photovoltaics: Research and Applications》2016,24(7):1016-1023
In this work, we practically demonstrated spectrum‐splitting approach for advances in efficiency of photovoltaic cells. Firstly, a‐Si:H//c‐Si 2‐junction configuration was designed, which exhibited 24.4% efficiency with the spectrum splitting at 620 nm. Then, we improved the top cell property by employing InGaP cells instead of the a‐Si:H, resulting in an achievement of efficiency about 28.8%. In addition, we constructed 3‐junction spectrum‐splitting system with two optical splitters, and GaAs solar cells as middle cell. This InGaP//GaAs//c‐Si architecture was found to deliver 30.9% conversion efficiency. Our splitting system includes convex lenses for light concentration about 10 suns, which provided concentrated efficiency exceeding 33.0%. These results suggest that our demonstration of 3‐junction spectrum‐splitting approach can be a promising candidate for highly efficient photovoltaic technologies. Copyright © 2016 John Wiley & Sons, Ltd. 相似文献
4.
M. Imaizumi S. Matsuda S. Kawakita T. Sumita T. Takamoto T. Ohshima M. Yamaguchi 《Progress in Photovoltaics: Research and Applications》2005,13(6):529-543
Japan's Research and Development (R&D) activities on high‐performance III–V compound space solar cells are presented. Studies of new CuInGaSe2 thin‐film terrestrial solar cells for space applications are also discussed. Performance and radiation characteristics of a newly developed InGaP/GaAs/Ge triple‐junction space solar cell, including radiation response, results of a flight demonstration test of InGaP/GaAs dual‐junction solar cells and CuInGaSe2 thin‐film solar cells, and radiation response of three component sub‐cells are explained. This study confirms superior radiation tolerance of InGaP/GaAs dual‐junction cells and CuInGaSe2 thin‐film cells by space flight experiments. Copyright © 2005 John Wiley & Sons, Ltd. 相似文献
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文章首先重点介绍了国内外开展GaInP/GaAs/Ge三结太阳电池的电子、质子及其他辐射粒子或射线辐照实验的研究进展,然后从辐照损伤效应的仿真模拟研究、抗辐射加固技术、损伤预估方法等方面综述了GaInP/GaAs/Ge三结太阳电池辐照损伤效应及加固技术的研究进展,最后梳理了当前GaInP/GaAs/Ge三结太阳电池辐照损伤效应研究中亟待解决的关键技术问题,为深入开展GaInP/GaAs/Ge三结太阳电池辐照损伤效应实验方法标准制定、损伤机理分析、在轨寿命预估及抗辐射加固技术研究提供了理论指导和实验技术支持。 相似文献
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Jeffrey F. Wheeldon Christopher E. Valdivia Alexandre W. Walker Gitanjali Kolhatkar Abdelatif Jaouad Artur Turala Bruno Riel Denis Masson Norbert Puetz Simon Fafard Richard Ars Vincent Aimez Trevor J. Hall Karin Hinzer 《Progress in Photovoltaics: Research and Applications》2011,19(4):442-452
Four tunnel junction (TJ) designs for multijunction (MJ) solar cells under high concentration are studied to determine the peak tunnelling current and resistance change as a function of the doping concentration. These four TJ designs are: AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs. Time‐dependent and time‐average methods are used to experimentally characterize the entire current–voltage profile of TJ mesa structures. Experimentally calibrated numerical models are used to determine the minimum doping concentration required for each TJ design to operate within a MJ solar cell up to 2000‐suns concentration. The AlGaAs/GaAs TJ design is found to require the least doping concentration to reach a resistance of <10−4 Ω cm2 followed by the GaAs/GaAs TJ and finally the AlGaAs/AlGaAs TJ. The AlGaAs/InGaP TJ is only able to obtain resistances of ≥5 × 10−4 Ω cm2 within the range of doping concentrations studied. Copyright © 2010 John Wiley & Sons, Ltd. 相似文献
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《Progress in Photovoltaics: Research and Applications》2018,26(5):317-323
GaAs single junction cells, representative of the middle cell in triple junction Ga 0.5In 0.5P/GaAs/Ge cells, were irradiated with various fluences of 1‐ and 3‐MeV electrons as well as 1‐MeV protons. The light I‐V curves measured at room temperature exhibit a voltage‐dependent photocurrent. The photocurrent is modeled taking into account the voltage‐dependent width of the space charge region in combination with a strongly decreased minority carrier diffusion length. By extracting the width of the space charge region from capacitance measurements and the base layer diffusion length from the external quantum efficiency of the cell, the experimental behavior is reproduced accurately. 相似文献
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运用2×1.7MV串列静电加速器提供的质子束,对MOCVD方法制备的GaInP/GaAs/Ge三结电池进行低能质子辐射效应研究.选质子能量为0.28,0.62和2.80MeV,辐照注量为1×1010,1×1011,1×1012和1×1013cm-2.对电池的辐射效应用I-V特性和光谱响应测试进行分析.研究结果表明:随辐照注量的增加,太阳电池性能参数Lsc,Voc和Pmax的衰降幅度均增大;但随质子辐照能量的增加,Lsc,Voc和Pmax的衰降幅度均减小.实验中0.28MeV质子辐照引起电池Lsc,Voc,Pmax衰降最显著,三结电池中光谱响应衰降最明显的是中间GaAs电池. 相似文献
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III‐V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on Earth. This article will review the situation of semiconductor solar cell materials, focusing on Si, GaAs, InGaP and multijunction solar cells and will discuss future trends and possibilities of bringing III‐V technology from space to Earth. Copyright © 2006 John Wiley & Sons, Ltd. 相似文献
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运用2×1.7MV串列静电加速器提供的质子束,对MOCVD方法制备的GaInP/GaAs/Ge三结电池进行低能质子辐射效应研究.选质子能量为0.28,0.62和2.80MeV,辐照注量为1×1010,1×1011,1×1012和1×1013cm-2.对电池的辐射效应用I-V特性和光谱响应测试进行分析.研究结果表明:随辐照注量的增加,太阳电池性能参数Lsc,Voc和Pmax的衰降幅度均增大;但随质子辐照能量的增加,Lsc,Voc和Pmax的衰降幅度均减小.实验中0.28MeV质子辐照引起电池Lsc,Voc,Pmax衰降最显著,三结电池中光谱响应衰降最明显的是中间GaAs电池. 相似文献
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光电倍增管,在单光子探测应用中,有独特优势,其有效面积大,暗电流低,且倍增系数大。基于三代负电子亲和势阴极技术研究了InGaAs光电倍增管,利用GaAs衬底外延InGaAs,将三代光电阴极截止波长从920nm拓展至1100nm,阴极积分灵敏度340uA/lm,光谱峰值830nm,1000nm辐射灵敏度6.2mA/W,InGaAs性能达到日本滨松公司V8071U-76产品水平。在内置2块微通道板后,整管电子倍增系数大于105。 相似文献
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随着GaAs负电子亲和势(NEA)半导体光电阴极在我国的成熟和应用,半导体光电阴极的进一步研究将往更长波的近红外发展。针对透射式半导体光电阴极器件,系统总结了近红外波段响应良好的GaAs、InGaAs、InGaAsP Ⅲ-V族外延材料特性及相应商业化产品的应用领域和性能。通过文献调研本文进一步归纳了不同波段NEA光电阴极和转移电子光阴极适用的材料结构,并结合传统GaAs NEA光电阴极工艺讨论了InGaAs、InGaAsP材料及阴极工艺的难点。 相似文献
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量子阱GaAs太阳电池的质子辐射效应 总被引：2，自引：2，他引：0
用I-V特性、光谱响应和深能级谱分析辐射效应,分析了1e9～2e13cm－2,2MeV质子辐照量子阱GaAs太阳电池．结果表明,随辐照注量增大,电池Isc,Voc,Pmax衰降程度增加;相同的注量,Pmax衰降程度最大．当注量大于3e12cm－2时,Isc衰降程度比Voc的大;当注量小于3e12cm－2时,Voc衰降程度比Isc的大;在900～1000nm波长范围内,2e13cm－2辐照使量子阱光谱响应特性消失．这与量子阱结构受到损伤引入位于Ec－0.35eV的深能级有关． 相似文献
15.
Carmine Pellegrino Alessio Gagliardi Claus G. Zimmermann 《Progress in Photovoltaics: Research and Applications》2019,27(5):379-390
GaAs component cells, representative of the middle cell in Ga0.5In0.5P/GaAs/Ge triple junction solar cells, were irradiated with protons and electrons of various energies and fluences. The local ideality factor, calculated from the measured dark J‐V curves, exhibits a characteristic signature of the irradiating particle. With the help of an analytical model based on Shockley‐Read‐Hall statistics, the recombination current in the space‐charge region is calculated, and the local diode ideality factor is reproduced accurately. The inclusion of defect levels away from the intrinsic Fermi level in the bandgap is found to be essential, since a classical two‐diode model fails to describe the experimental data. On the basis of literature data of known defect levels in irradiated GaAs, the associated lifetimes and defect introduction rates are derived. 相似文献
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在研究新型高效GaAs基三结和四结太阳电池过程中,研究者努力寻找一种既满足能隙约为1eV,同时又与GaAs衬底晶格匹配的半导体材料。通过调节组分,GaInNAs可同时满足上述两个特性,因此GaInNAs被认为是制备新型高效多结GaAs基太阳电池的理想材料。但实际上,制备高晶体质量GaInNAs材料十分困难,造成所制备的器件性能低下,未能达到实际要求。探讨了导致GaInNAs材料生长困难的机理,并对当前GaAs基GaInNAs太阳电池材料的研究历程和技术现状进行了概述。在此基础上,展望了GaInNAs技术的未来走向。 相似文献
18.
高性能六边形发射极InGaP/GaAs异质结双极型晶体管 总被引：1，自引：1，他引：0
六边形发射极的自对准In Ga P/ Ga As异质结具有优异的直流和微波性能.采用发射极面积为2μm×10μm的异质结双极型晶体管,VCE偏移电压小于15 0 m V,膝点电压为0 .5 V(IC=16 m A) ,BVCEO大于9V,BVCBO大于14 V,特征频率高达92 GHz,最高振荡频率达到10 5 GHz.这些优异的性能预示着In Ga P/ Ga As HBT在超高速数字电路和微波功率放大领域具有广阔的应用前景 相似文献
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GaAs/InGaAs量子点应变场的TEM研究 总被引：1，自引：1，他引：0
运用透射电子显微术(TEM)对由分子束外延(MBE)制备的GaAs／InGaAs多层量子点样品进行观察和分析。利用对量子点周围应变场分布的模拟,定性解释了量子点形貌及其周围发现的凹陷区域。通过对量子点高分辨像显示的晶格错配和化学成分分析研究,解释了所研究样品中量子点尺寸逐层增大的现象。研究结果为量子点材料生长过程中应变场的控制提供了一些思路。 相似文献
20.
Tatsuya Takamoto Minoru Kaneiwa Mitsuru Imaizumi Masafumi Yamaguchi 《Progress in Photovoltaics: Research and Applications》2005,13(6):495-511
The conversion efficiency of InGaP/(In)GaAs/Ge ‐based multijunction solar cells has been improved up to 29–30% (AM0) and 31–32% (AM1·5G) by technologies, such as double‐hetero wide band‐gap tunnel junctions, combination with Ge bottom cell with the InGaP first hetero‐growth layer, and precise lattice‐matching to Ge substrate by adding 1% indium to the conventional GaAs lattice‐match structure. Employing a 1·95 eV AlInGaP top cell should improve efficiency further. For space use, radiation resistance has been improved by technologies such as introducing of an electric field in the base layer of the lowest‐resistance middle cell, and EOL current matching of sub‐cells to the highest‐resistance top cell. A grid structure and cell size have been designed for concentrator applications in order to reduce the energy loss due to series resistance, and 38% (AM1·5G, 100–500 suns) efficiency has been demonstrated. Furthermore, thin‐film structure which is InGaP/GaAs dual junction cell on metal film has been newly developed. The thin‐film cell demonstrated high flexibility, lightweight, high efficiency of over 25% (AM0) and high radiation resistance. Copyright © 2005 John Wiley & Sons, Ltd. 相似文献