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基于AD9914的新型全数字宽带毫米波相参信号源设计 总被引:1,自引:0,他引:1
《现代电子技术》2015,(11):50-53
为满足宽带毫米波雷达对信号源的较高需求,设计了一种适用于宽带毫米波相参雷达的任意波形产生器。该信号源的核心器件为ADI公司最新的AD9914芯片,控制芯片为常用的Spartan3 FGPA芯片。该信号源能产生简单脉冲信号,幅度、相位、频率调制信号和线性调频信号等。测试了信号源的相参性,同时验证了信号的脉压性能,测试结果表明,该信号源具有很好的频率稳定性和相参性能,在加海明窗的情况下,脉冲压缩的副瓣可达-44 d B。经上变频,可输出带宽为800 MHz,中心频率为34.15 GHz的毫米波信号。 相似文献
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针对未来智能驾驶和无人驾驶对毫米波传感器多模式、多场景感知需求,设计并实现了一种77GHz多模毫米波雷达收发机芯片。芯片采用65nm CMOS工艺,集成了3路雷达发射机和4路接收机、调频连续波(FMCW)波形发生器、模数转换器以及高速数据接口等电路。利用交叉耦合中和电容技术提升了CMOS工艺上毫米波低噪声放大器、毫米波片上功放等电路性能,采用两点调制锁相环技术提升了FMCW信号带宽和调制速率。收发机的发射功率、波形样式、接收增益和带宽等参数具有较好的可配置性,满足未来多模式、小型化和低成本汽车雷达传感器需求。芯片测试结果显示,在76~81GHz频率范围内,接收机实现50dB的增益控制,最小噪声系数11dB,FMCW信号调频带宽达4.2GHz,调制速率达233MHz/μs,线性度优于0.1%,-45~+125℃全温范围内发射机典型输出功率大于13dBm。 相似文献
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矢量调制器由于在毫米波频段内具有的多级幅度和360o相位控制的特点,在毫米波直接载波调制和相控阵雷达系统应用中具有十分重要的作用。文中采用平衡式矢量调制器结构,对影响该调制器宽带平衡响应的关键参数进行了分析。通过研究Lange 耦合器的耦合系数和均效应管开关管的尺寸对宽带平衡性能的影响,提出了一种宽带矢量调制器的设计方法。基于该设计方法,采用单片电路的实现方式,利用商用砷化镓70 nm mHEMT 工艺设计了一款工作在40 GHz ~80 GHz 的宽带毫米波矢量调制器微波单片集成电路。结果表明:在整个40 GHz 的带宽范围内,所设计的矢量调制器具有优于正负4o的相位偏差和优于正负0. 4 dB 的幅度偏差。 相似文献
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随着77GHz车载毫米波雷达的大范围使用,随之而来的是雷达相互间的干扰问题。雷达射频编码是重要的抗干扰手段,根据车载毫米波雷达的工作特点,提出了一种射频编码方式来解决雷达相互干扰问题。该编码方式基于毫米波射频芯片的二相调制功能,在发射时对每个周期的相位进行二相编码,在接收时按照已知的规则对信号解码,以此来达到抑制干扰的目的。具体的编码规则不但能对雷达进行序号设定,还预留了车联网扩展应用空间,为将来实现联网通信、交通管理控制、安全急救等扩展应用打好基础。 相似文献
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《固体电子学研究与进展》1991,(4)
<正>据《Microwave&RF》1991年7月报道,美国TRW公司设计制造了在一个芯片上组成的毫米波雷达.这种器件是工作在40GHz的FMCW(调频连续波)雷达收发组件,芯片尺寸为4.35×7.00mm.该公司宣布这是首枚功能最多的毫米波芯片雷达,它有可能代替目前应用于灵巧武器中的微波混合集成电路雷达. 相似文献
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毫米波相控阵雷达及其应用发展 总被引:4,自引:2,他引:2
概述了毫米波相控阵雷达的特点,介绍了电扫原理和主要毫米波电扫技术,以及相位控制扫描和多种移相器技术。针对毫米波相控阵雷达的特点,叙述了其主要应用领域,结合雷达和半导体技术对毫米波相控阵雷达的发展进行了展望。 相似文献
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针对其他各类传感器在极限条件下测距的局限性及微波雷达的全天候工作特点,提出了一种基于调频连续波(FMCW)工作方式的低功耗雷达测距装置。该装置功耗为500 mW,以120 GHz毫米波雷达传感器芯片为核心,使用STM32芯片进行控制及信号处理,基于ADF4169芯片完成所需的调频源输出。在对弱差频信号作滤波、放大、采集及频域处理后,通过上位机进行距离显示。实验结果表明:在1.5 m的单目标距离测试范围内,测距精度为3 cm。该系统的研究对推进D频段雷达传感器的实际应用具有重要价值。 相似文献
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Through-the-Wall Surveillance With Millimeter-Wave LFMCW Radars 总被引:1,自引:0,他引:1
《Geoscience and Remote Sensing, IEEE Transactions on》2009,47(6):1796-1805
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David R. Martinez Tyler J. Moeller Ken Teitelbaum 《The Journal of VLSI Signal Processing》2001,28(1-2):63-83
Many radar sensor systems demand high performance front-end signal processing. The high processing throughput is driven by the fast analog-to-digital conversion sampling rate, the large number of sensor channels, and stringent requirements on the filter design leading to a large number of filter taps. The computational demands range from tens to hundreds of billion operations per second (GOPS). Fortunately, this processing is very regular, highly parallel, and well suited to VLSI hardware. We recently fielded a system consisting of 100 GOPS designed using custom VLSI chips. The system can adapt to different filter coefficients as a function of changes in the transmitted radar pulse. Although the computation is performed on custom VLSI chips, there are important reasons to attempt to solve this problem using adaptive computing devices. As feature size shrinks and field programmable gate arrays become more capable, the same filtering operation will be feasible using reconfigurable electronics. In this paper we describe the hardware architecture of this high performance radar signal processor, technology trends in reconfigurable computing, and present an alternate implementation using emerging reconfigurable technologies. We investigate the suitability of a Xilinx Virtex chip (XCV1000) to this application. Results of simulating and implementing the application on the Xilinx chip is also discussed. 相似文献
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针对机载有源相控阵雷达小型化、多功能、高功率的要求,研制了一款应用于C、X、Ku波段的双通道超宽带T/R砖块组件,外观尺寸为30.0 mm×70.0 mm×8.5 mm.组件在工作频带内可以实现6位移相、6位衰减,工作带宽达到12 GHz,发射输出功率≥ 37 dBm,接收增益达到22 dB.通过对电路中无源结构进行仿真,并利用得到的仿真结果和射频芯片实现链路仿真,解决了超宽带T/R组件端口驻波较差和接收增益平坦度差且难以预估的难题.最终制造的T/R组件具有超宽带、低噪声、高功率以及良好的幅相性能. 相似文献
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以毫米波成像应用为背景,研制了一种用于Ka波段主动成像系统的宽带收发前端。采用结构紧凑的自差式结构,降低系统成本并使其具有较高的可靠性;分析影响成像系统的动态范围和分辨率的因素,选择并设计宽频带毫米波源、低插损带通滤波器和平面缝隙天线等关键电路,使前端具有足够的输出功率和良好的杂散抑制,在31~36GHz的频带内,收发前端的输出功率大于10.4dBm,杂散抑制大于25dBc。对金属目标的成像实验结果表明,前端的方位向和距离向的分辨能力小于8cm,初步满足了主动成像的要求。 相似文献
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The challenges in the design of CMOS millimeter-wave (mm-wave) transceiver for Gbps wireless communication are discussed. To support the Gbps data rate, the link bandwidth of the receiver/transmitter must be wide enough, which puts a lot of pressure on the mm-wave front-end as well as on the baseband circuit. This paper discusses the effects of the limited link bandwidth on the transceiver system performance and overviews the bandwidth expansion techniques for mm-wave amplifiers and IF programmable gain amplifier. Furthermore, dual-mode power amplifier (PA) and self-healing technique are introduced to improve the PA''s average efficiency and to deal with the process, voltage, and temperature variation issue, respectively. Several fully-integrated CMOS mm-wave transceivers are also presented to give a short overview on the state-of-the-art mm-wave transceivers. 相似文献
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Egidio Ragonese Angelo Scuderi Vittorio Giammello Giuseppe Palmisano 《Analog Integrated Circuits and Signal Processing》2011,67(2):121-130
This paper presents a fully integrated SiGe BiCMOS 24-GHz receiver front-end implemented for a ultra-wideband automotive short-range
radar sensor. The circuit consists of a homodyne I/Q down-converter and a 24-GHz synthesizer. The receiver front-end is able
to achieve a power conversion gain as high as 30 dB and a 6-dB noise figure, while preserving high linearity performance thanks
to a 1-bit gain control. The frequency synthesizer, which also includes an on-chip loop filter, guarantees a phase noise of
−104 dBc/Hz at 1-MHz offset from the 24.125-GHz carrier and a 4.7-GHz tuning range from 20.4 to 25.1 GHz. 相似文献
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Tessmann A. Kallfass I. Leuther A. Massler H. Kuri M. Riessle M. Zink M. Sommer R. Wahlen A. Essen H. Hurm V. Schlechtweg M. Ambacher O. 《Solid-State Circuits, IEEE Journal of》2008,43(10):2194-2205
In this paper, we present the development of advanced W-band and G-band millimeter-wave monolithic integrated circuits (MMICs) and modules for use in a high-resolution radar system operating at 210 GHz. A W-band frequency multiplier by six as well as a subharmonically pumped 210 GHz dual-gate field-effect transistor (FET) mixer and a 105 GHz power amplifier circuit have been successfully realized using our 0.1 mum InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Additionally, a 210 GHz low-noise amplifier MMIC was fabricated using our advanced 0.05 mum mHEMT technology. To package the circuits, a set of waveguide-to-microstrip transitions has been realized on 50 mum thick quartz substrates, covering the frequency range between 75 and 220 GHz. The presented millimeter-wave components were developed for use in a novel 210 GHz radar demonstrator COBRA-210, which delivers an instantaneous bandwidth of 8 GHz and an outstanding spatial resolution of 1.8 cm. 相似文献