Solution Adsorption Formation of a π‐Conjugated Polymer/Graphene Composite for High‐Performance Field‐Effect Transistors

Semiconducting polymers with π‐conjugated electronic structures have potential application in the large‐scale printable fabrication of high‐performance electronic and optoelectronic devices. However, owing to their poor environmental stability and high‐cost synthesis, polymer semiconductors possess limited device implementation. Here, an approach for constructing a π‐conjugated polymer/graphene composite material to circumvent these limitations is provided, and then this material is patterned into 1D arrays. Driven by the π–π interaction, several‐layer polymers can be adsorbed onto the graphene planes. The low consumption of the high‐cost semiconductor polymers and the mass production of graphene contribute to the low‐cost fabrication of the π‐conjugated polymer/graphene composite materials. Based on the π‐conjugated system, a reduced π–π stacking distance between graphene and the polymer can be achieved, yielding enhanced charge‐transport properties. Owing to the incorporation of graphene, the composite material shows improved thermal stability. More generally, it is believed that the construction of the π‐conjugated composite shows clear possibility of integrating organic molecules and 2D materials into microstructure arrays for property‐by‐design fabrication of functional devices with large area, low cost, and high efficiency.     

Modulation‐Doped In2O3/ZnO Heterojunction Transistors Processed from Solution

This paper reports the controlled growth of atomically sharp In₂O₃/ZnO and In₂O₃/Li‐doped ZnO (In₂O₃/Li‐ZnO) heterojunctions via spin‐coating at 200 °C and assesses their application in n‐channel thin‐film transistors (TFTs). It is shown that addition of Li in ZnO leads to n‐type doping and allows for the accurate tuning of its Fermi energy. In the case of In₂O₃/ZnO heterojunctions, presence of the n‐doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In₂O₃ over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n‐doped ZnO layer on the charge transport properties of the isotype In₂O₃/Li‐ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In₂O₃/Li‐ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.     

Improved Morphology and Performance of Solution‐Processed Metal‐Oxide Thin‐Film Transistors Due to a Polymer Based Interface Modifier

The influence of a polymer interface modifier on the performance of solution‐processed indium‐based metal‐oxide (MO) thin‐film transistors (TFTs) is investigated. We use the polymer ethoxylated polyethylenimine (PEIE). Compared to a reference sample this modification enhances the mobility by a factor of four, clearly reduces the contact and the sheet resistance, and decreases the charge carrier activation energy by about 20%. The improved electrical performance originates from both a reduced contact and a reduced sheet resistance of the TFTs. The molecular dipole of PEIE reduces the work function of the electrodes. Adversely the dipole enhances the off current and the trap density at the semiconductor/dielectric interface for bottom‐contact transistors with small channel length. The substrate becomes highly polar with a PEIE‐treatment. Accordingly, topographical studies of bottom‐contact TFTs show a very similar MO film morphology on the electrodes and in the channel for modified TFTs, whereas in the untreated samples the film has a higher roughness on the electrodes than in the channel. TFTs in top‐contact configuration with the polymer interface layer at the dielectric/semiconductor interface also show higher mobility compared to the reference MOTFTs which displays that the improved performance is due to the improved morphology of the MO film.     

Metal‐Halide Perovskites for Gate Dielectrics in Field‐Effect Transistors and Photodetectors Enabled by PMMA Lift‐Off Process

Metal‐halide perovskites have emerged as promising materials for optoelectronics applications, such as photovoltaics, light‐emitting diodes, and photodetectors due to their excellent photoconversion efficiencies. However, their instability in aqueous solutions and most organic solvents has complicated their micropatterning procedures, which are needed for dense device integration, for example, in displays or cameras. In this work, a lift‐off process based on poly(methyl methacrylate) and deep ultraviolet lithography on flexible plastic foils is presented. This technique comprises simultaneous patterning of the metal‐halide perovskite with a top electrode, which results in microscale vertical device architectures with high spatial resolution and alignment properties. Hence, thin‐film transistors (TFTs) with methyl‐ammonium lead iodide (MAPbI₃) gate dielectrics are demonstrated for the first time. The giant dielectric constant of MAPbI₃ (>1000) leads to excellent low‐voltage TFT switching capabilities with subthreshold swings ≈80 mV decade^?1 over ≈5 orders of drain current magnitude. Furthermore, vertically stacked low‐power Au‐MAPbI₃‐Au photodetectors with close‐to‐ideal linear response (R² = 0.9997) are created. The mechanical stability down to a tensile radius of 6 mm is demonstrated for the TFTs and photodetectors, simultaneously realized on the same flexible plastic substrate. These results open the way for flexible low‐power integrated (opto‐)electronic systems based on metal‐halide perovskites.     

Corrugated Heterojunction Metal‐Oxide Thin‐Film Transistors with High Electron Mobility via Vertical Interface Manipulation

A new strategy is reported to achieve high‐mobility, low‐off‐current, and operationally stable solution‐processable metal‐oxide thin‐film transistors (TFTs) using a corrugated heterojunction channel structure. The corrugated heterojunction channel, having alternating thin‐indium‐tin‐zinc‐oxide (ITZO)/indium‐gallium‐zinc‐oxide (IGZO) and thick‐ITZO/IGZO film regions, enables the accumulated electron concentration to be tuned in the TFT off‐ and on‐states via charge modulation at the vertical regions of the heterojunction. The ITZO/IGZO TFTs with optimized corrugated structure exhibit a maximum field‐effect mobility >50 cm² V^?1 s^?1 with an on/off current ratio of >10⁸ and good operational stability (threshold voltage shift <1 V for a positive‐gate‐bias stress of 10 ks, without passivation). To exploit the underlying conduction mechanism of the corrugated heterojunction TFTs, a physical model is implemented by using a variety of chemical, structural, and electrical characterization tools and Technology Computer‐Aided Design simulations. The physical model reveals that efficient charge manipulation is possible via the corrugated structure, by inducing an extremely high carrier concentration at the nanoscale vertical channel regions, enabling low off‐currents and high on‐currents depending on the applied gate bias.     

Thermopower Modulation Clarification of the Operating Mechanism in Wide Bandgap BaSnO3–SrSnO3 Solid‐Solution Based Thin Film Transistors

The transparent oxide semiconductor (TOS) with large bandgap (E_g ≈ 4 eV) based thin‐film transistors (TFTs) showing both high carrier mobility and UV–visible transparency has attracted increasing attention as a promising component for next generation optoelectronics. Among TOSs, BaSnO₃–SrSnO₃ solid‐solutions (E_g = 3.5–4.2 eV) are good candidates because the single crystal shows very high mobility. However, the TFT performance has not been optimized due to the lack of fundamental knowledge especially the effective thickness (t_eff) and the carrier effective mass (m*). Here, it is demonstrated that the electric field thermopower (S) modulation method addresses this problem by combining with the standard volume carrier concentration (n_3D) dependence of S measurements. By comparing the electric field accumulated sheet carrier concentration (n_2D) and n_3D at same S, it is clarified that the t_eff (?n_2D/n_3D) of the conducting channel becomes thicker with increasing Sr concentration, whereas the m* becomes lighter. The former would be due to the increase of E_g and latter would be due to the enhancement of overlap population of neighboring Sn 5s orbitals. The present analyses technique is useful to experimentally clarify the t_eff and m*, and essentially important to realize advanced TOS‐based TFTs showing both high optical transparency and high mobility.