Chiral Octahydro‐Binaphthol Compound‐Based Thermally Activated Delayed Fluorescence Materials for Circularly Polarized Electroluminescence with Superior EQE of 32.6% and Extremely Low Efficiency Roll‐Off

Circularly polarized organic light‐emitting diodes (CP‐OLEDs) are particularly favorable for the direct generation of CP light, and they demonstrate a promising application in 3D display. However, up to now, such CP devices have suffered from low brightness, insufficient efficiency, and serious efficiency roll‐off. In this study, a pair of octahydro‐binaphthol ( OBN )‐based chiral emitting enantiomers, (R/S)‐OBN‐Cz , are developed by ingeniously merging a chiral source and a luminophore skeleton. These chirality–acceptor–donor (C–A–D)‐type and rod‐like compounds concurrently generate thermally activated delayed fluorescence with a small ΔE_ST of 0.037 eV, as well as a high photoluminescence quantum yield of 92% and intense circularly polarized photoluminescence with dissymmetry factors (|g_PL|) of ≈2.0 × 10^?3 in thin films. The CP‐OLEDs based on (R/S)‐OBN‐Cz enantiomers not only display obvious circularly polarized electroluminescence signals with a |g_EL| of ≈2.0 × 10^?3, but also exhibit superior efficiencies with maximum external quantum efficiency (EQE_max) up to 32.6% and extremely low efficiency roll‐off with an EQE of 30.6% at 5000 cd m^?2, which are the best performances among the reported CP devices to date.     

SnSe/MoS2 van der Waals Heterostructure Junction Field‐Effect Transistors with Nearly Ideal Subthreshold Slope

The minimization of the subthreshold swing (SS) in transistors is essential for low‐voltage operation and lower power consumption, both critical for mobile devices and internet of things (IoT) devices. The conventional metal‐oxide‐semiconductor field‐effect transistor requires sophisticated dielectric engineering to achieve nearly ideal SS (60 mV dec^?1 at room temperature). However, another type of transistor, the junction field‐effect transistor (JFET) is free of dielectric layer and can reach the theoretical SS limit without complicated dielectric engineering. The construction of a 2D SnSe/MoS₂ van der Waals (vdW) heterostructure‐based JFET with nearly ideal SS is reported. It is shown that the SnSe/MoS₂ vdW heterostructure exhibits excellent p–n diode rectifying characteristics with low saturate current. Using the SnSe as the gate and MoS₂ as the channel, the SnSe/MoS₂ vdW heterostructure exhibit well‐behavioured n‐channel JFET characteristics with a small pinch‐off voltage V_P of ?0.25 V, nearly ideal subthreshold swing SS of 60.3 mV dec^?1 and high ON/OFF ratio over 10⁶, demonstrating excellent electronic performance especially in the subthreshold regime.     

Lateral Graphene‐Contacted Vertically Stacked WS2/MoS2 Hybrid Photodetectors with Large Gain

A demonstration is presented of how significant improvements in all‐2D photodetectors can be achieved by exploiting the type‐II band alignment of vertically stacked WS₂/MoS₂ semiconducting heterobilayers and finite density of states of graphene electrodes. The photoresponsivity of WS₂/MoS₂ heterobilayer devices is increased by more than an order of magnitude compared to homobilayer devices and two orders of magnitude compared to monolayer devices of WS₂ and MoS₂, reaching 10³ A W^?1 under an illumination power density of 1.7 × 10² mW cm^?2. The massive improvement in performance is due to the strong Coulomb interaction between WS₂ and MoS₂ layers. The efficient charge transfer at the WS₂/MoS₂ heterointerface and long trapping time of photogenerated charges contribute to the observed large photoconductive gain of ≈3 × 10⁴. Laterally spaced graphene electrodes with vertically stacked 2D van der Waals heterostructures are employed for making high‐performing ultrathin photodetectors.     

Phosphorus‐Mediated MoS2 Nanowires as a High‐Performance Electrode Material for Quasi‐Solid‐State Sodium‐Ion Intercalation Supercapacitors

Molybdenum disulfide (MoS₂) is a promising electrode material for electrochemical energy storage owing to its high theoretical specific capacity and fascinating 2D layered structure. However, its sluggish kinetics for ionic diffusion and charge transfer limits its practical applications. Here, a promising strategy is reported for enhancing the Na⁺‐ion charge storage kinetics of MoS₂ for supercapacitors. In this strategy, electrical conductivity is enhanced and the diffusion barrier of Na⁺ ion is lowered by a facile phosphorus‐doping treatment. Density functional theory results reveal that the lowest energy barrier of dilute Na‐vacancy diffusion on P‐doped MoS₂ (0.11 eV) is considerably lower than that on pure MoS₂ (0.19 eV), thereby signifying a prominent rate performance at high Na intercalation stages upon P‐doping. Moreover, the Na‐vacancy diffusion coefficient of the P‐doped MoS₂ at room temperatures can be enhanced substantially by approximately two orders of magnitude (10^?6–10^?4 cm² s^?1) compared with pure MoS₂. Finally, the quasi‐solid‐state asymmetrical supercapacitor assembled with P‐doped MoS₂ and MnO₂, as the positive and negative electrode materials, respectively, exhibits an ultrahigh energy density of 67.4 W h kg^?1 at 850 W kg^?1 and excellent cycling stability with 93.4% capacitance retention after 5000 cycles at 8 A g^?1.     

Direct Laser‐Patterned Micro‐Supercapacitors from Paintable MoS2 Films

Micrometer‐sized electrochemical capacitors have recently attracted attention due to their possible applications in micro‐electronic devices. Here, a new approach to large‐scale fabrication of high‐capacitance, two‐dimensional MoS₂ film‐based micro‐supercapacitors is demonstrated via simple and low‐cost spray painting of MoS₂ nanosheets on Si/SiO₂ chip and subsequent laser patterning. The obtained micro‐supercapacitors are well defined by ten interdigitated electrodes (five electrodes per polarity) with 4.5 mm length, 820 μm wide for each electrode, 200 μm spacing between two electrodes and the thickness of electrode is ～0.45 μm. The optimum MoS₂‐based micro‐supercapacitor exhibits excellent electrochemical performance for energy storage with aqueous electrolytes, with a high area capacitance of 8 mF cm^?2 (volumetric capacitance of 178 F cm^?3) and excellent cyclic performance, superior to reported graphene‐based micro‐supercapacitors. This strategy could provide a good opportunity to develop various micro‐/nanosized energy storage devices to satisfy the requirements of portable, flexible, and transparent micro‐electronic devices.     

Highly Conductive Ti3C2Tx MXene Hybrid Fibers for Flexible and Elastic Fiber‐Shaped Supercapacitors

Fiber‐shaped supercapacitors (FSCs) are promising energy storage solutions for powering miniaturized or wearable electronics. However, the scalable fabrication of fiber electrodes with high electrical conductivity and excellent energy storage performance for use in FSCs remains a challenge. Here, an easily scalable one‐step wet‐spinning approach is reported to fabricate highly conductive fibers using hybrid formulations of Ti₃C₂T_x MXene nanosheets and poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate. This approach produces fibers with a record conductivity of ≈1489 S cm^?1, which is about five times higher than other reported Ti₃C₂T_x MXene‐based fibers (up to ≈290 S cm^?1). The hybrid fiber at ≈70 wt% MXene shows a high volumetric capacitance (≈614.5 F cm^?3 at 5 mV s^?1) and an excellent rate performance (≈375.2 F cm^?3 at 1000 mV s^?1). When assembled into a free‐standing FSC, the energy and power densities of the device reach ≈7.13 Wh cm^?3 and ≈8249 mW cm^?3, respectively. The excellent strength and flexibility of the hybrid fibers allow them to be wrapped on a silicone elastomer fiber to achieve an elastic FSC with 96% capacitance retention when cyclically stretched to 100% strain. This work demonstrates the potential of MXene‐based fiber electrodes and their scalable production for fiber‐based energy storage applications.     

Glucose‐Induced Synthesis of 1T‐MoS2/C Hybrid for High‐Rate Lithium‐Ion Batteries

1T phase MoS₂ possesses higher conductivity than the 2H phase, which is a key parameter of electrochemical performance for lithium ion batteries (LIBs). Herein, a 1T‐MoS₂/C hybrid is successfully synthesized through facile hydrothermal method with a proper glucose additive. The synthesized hybrid material is composed of smaller and fewer‐layer 1T‐MoS₂ nanosheets covered by thin carbon layers with an enlarged interlayer spacing of 0.94 nm. When it is used as an anode material for LIBs, the enlarged interlayer spacing facilitates rapid intercalating and deintercalating of lithium ions and accommodates volume change during cycling. The high intrinsic conductivity of 1T‐MoS₂ also contributes to a faster transfer of lithium ions and electrons. Moreover, much smaller and fewer‐layer nanosheets can shorten the diffusion path of lithium ions and accelerate reaction kinetics, leading to an improved electrochemical performance. It delivers a high initial capacity of 920.6 mAh g^?1 at 1 A g^?1 and the capacity can maintain 870 mAh g^?1 even after 300 cycles, showing a superior cycling stability. The electrode presents a high rate performance as well with a reversible capacity of 600 mAh g^?1 at 10 A g^?1. These results show that the 1T‐MoS₂/C hybrid shows potential for use in high‐performance lithium‐ion batteries.     

Graphene‐Contacted Ultrashort Channel Monolayer MoS2 Transistors

2D semiconductors are promising channel materials for field‐effect transistors (FETs) with potentially strong immunity to short‐channel effects (SCEs). In this paper, a grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS₂. FETs with channel lengths scaling down to ≈4 nm can be realized reliably. These graphene‐contacted ultrashort channel MoS₂ FETs exhibit superior performances including the nearly Ohmic contacts and excellent immunity to SCEs. This work provides a facile route toward the fabrication of various 2D material‐based devices for ultrascaled electronics.     

Nickel@Nitrogen‐Doped Carbon@MoS2 Nanosheets: An Efficient Electrocatalyst for Hydrogen Evolution Reaction

Developing cheap, abundant, and easily available electrocatalysts to drive the hydrogen evolution reaction (HER) at small overpotentials is an urgent demand of hydrogen production from water splitting. Molybdenum disulfide (MoS₂) based composites have emerged as competitive electrocatalysts for HER in recent years. Herein, nickel@nitrogen‐doped carbon@MoS₂ nanosheets (Ni@NC@MoS₂) hybrid sub‐microspheres are presented as HER catalyst. MoS₂ nanosheets with expanded interlayer spacings are vertically grown on nickel@nitrogen‐doped carbon (Ni@NC) substrate to form Ni@NC@MoS₂ hierarchical sub‐microspheres by a simple hydrothermal process. The formed Ni@NC@MoS₂ composites display excellent electrocatalytic activity for HER with an onset overpotential of 18 mV, a low overpotential of 82 mV at 10 mA cm^?2, a small Tafel slope of 47.5 mV dec^?1, and high durability in 0.5 H₂SO₄ solution. The outstanding HER performance of the Ni@NC@MoS₂ catalyst can be ascribed to the synergistic effect of dense catalytic sites on MoS₂ nanosheets with exposed edges and expanded interlayer spacings, and the rapid electron transfer from Ni@NC substrate to MoS₂ nanosheets. The excellent Ni@NC@MoS₂ electrocatalyst promises potential application in practical hydrogen production, and the strategy reported here can also be extended to grow MoS₂ on other nitrogen‐doped carbon encapsulated metal species for various applications.     

Broadband MoS2 Field‐Effect Phototransistors: Ultrasensitive Visible‐Light Photoresponse and Negative Infrared Photoresponse

Inverse photoresponse is discovered from phototransistors based on molybdenum disulfide (MoS₂). The devices are capable of detecting photons with energy below the bandgap of MoS₂. Under the illumination of near‐infrared (NIR) light at 980 and 1550 nm, negative photoresponses with short response time (50 ms) are observed for the first time. Upon visible‐light illumination, the phototransistors exhibit positive photoresponse with ultrahigh responsivity on the order of 10⁴–10⁵ A W^?1 owing to the photogating effect and charge trapping mechanism. Besides, the phototransistors can detect a weak visible‐light signal with effective optical power as low as 17 picowatts (pW). A thermally induced photoresponse mechanism, the bolometric effect, is proposed as the cause of the negative photocurrent in the NIR regime. The thermal energy of the NIR radiation is transferred to the MoS₂ crystal lattice, inducing lattice heating and resistance increase. This model is experimentally confirmed by low‐temperature electrical measurements. The bolometric coefficient calculated from the measured transport current change with temperature is ?33 nA K^?1. These findings offer a new approach to develop sub‐bandgap photodetectors and other novel optoelectronic devices based on 2D layered materials.     

Two‐Terminal Multibit Optical Memory via van der Waals Heterostructure

2D van der Waals (vdWs) heterostructures exhibit intriguing optoelectronic properties in photodetectors, solar cells, and light‐emitting diodes. In addition, these materials have the potential to be further extended to optical memories with promising broadband applications for image sensing, logic gates, and synaptic devices for neuromorphic computing. In particular, high programming voltage, high off‐power consumption, and circuital complexity in integration are primary concerns in the development of three‐terminal optical memory devices. This study describes a multilevel nonvolatile optical memory device with a two‐terminal floating‐gate field‐effect transistor with a MoS₂/hexagonal boron nitride/graphene heterostructure. The device exhibits an extremely low off‐current of ≈10^?14 A and high optical switching on/off current ratio of over ≈10⁶, allowing 18 distinct current levels corresponding to more than four‐bit information storage. Furthermore, it demonstrates an extended endurance of over ≈10⁴ program–erase cycles and a long retention time exceeding 3.6 × 10⁴ s with a low programming voltage of ?10 V. This device paves the way for miniaturization and high‐density integration of future optical memories with vdWs heterostructures.     

Aligned Heterointerface‐Induced 1T‐MoS2 Monolayer with Near‐Ideal Gibbs Free for Stable Hydrogen Evolution Reaction

1T‐phase molybdenum disulfide (1T‐MoS₂) exhibits superior hydrogen evolution reaction (HER) over 2H‐phase MoS₂ (2H‐MoS₂). However, its thermodynamic instability is the main drawback impeding its practical application. In this work, a stable 1T‐MoS₂ monolayer formed at edge‐aligned 2H‐MoS₂ and a reduced graphene oxide heterointerface (EA‐2H/1T/RGO) using a precursor‐in‐solvent synthesis strategy are reported. Theoretical prediction indicates that the edge‐aligned layer stacking can induce heterointerfacial charge transfer, which results in a phase transition of the interfacial monolayer from 2H to 1T that realizes thermodynamic stability based on the adhesion energy between MoS₂ and graphene. As an electrocatalyst for HER, EA‐2H/1T/RGO displays an onset potential of ?103 mV versus RHE, a Tafel slope of 46 mV dec^?1 and 10 h stability in acidic electrolyte. The unexpected activity of EA‐2H/1T/RGO beyond 1T‐MoS₂ is due to an inherent defect caused by the gliding of S atoms during the phase transition from 2H to 1T, leading the Gibbs free energy of hydrogen adsorption (ΔG_H*) to decrease from 0.13 to 0.07 eV, which is closest to the ideal value (0.06 eV) of 2H‐MoS₂. The presented work provides fundamental insights into the impressive electrochemical properties of HER and opens new avenues for phase transitions at 2D/2D hybrid interfaces.     

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect Transistors

2D transition metal dichalcogenides (TMDCs) have emerged as promising candidates for post‐silicon nanoelectronics owing to their unique and outstanding semiconducting properties. However, contact engineering for these materials to create high‐performance devices while adapting for large‐area fabrication is still in its nascent stages. In this study, graphene/Ag contacts are introduced into MoS₂ devices, for which a graphene film synthesized by chemical vapor deposition (CVD) is inserted between a CVD‐grown MoS₂ film and a Ag electrode as an interfacial layer. The MoS₂ field‐effect transistors with graphene/Ag contacts show improved electrical and photoelectrical properties, achieving a field‐effect mobility of 35 cm² V^?1 s^?1, an on/off current ratio of 4 × 10⁸, and a photoresponsivity of 2160 A W^?1, compared to those of devices with conventional Ti/Au contacts. These improvements are attributed to the low work function of Ag and the tunability of graphene Fermi level; the n‐doping of Ag in graphene decreases its Fermi level, thereby reducing the Schottky barrier height and contact resistance between the MoS₂ and electrodes. This demonstration of contact interface engineering with CVD‐grown MoS₂ and graphene is a key step toward the practical application of atomically thin TMDC‐based devices with low‐resistance contacts for high‐performance large‐area electronics and optoelectronics.     

MoS2/Rubrene van der Waals Heterostructure: Toward Ambipolar Field‐Effect Transistors and Inverter Circuits

2D transition metal dichalcogenides are promising channel materials for the next‐generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS₂) few layers and organic crystal – 5,6,11,12‐tetraphenylnaphthacene (rubrene). In this work, ambipolar field‐effect transistors are successfully achieved based on MoS₂ and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm² V^?1 s^?1, respectively. The ambipolar behavior is explained based on the band alignment of MoS₂ and rubrene. Furthermore, being a building block, the MoS₂/rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of ?26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices.     

High Areal Capacity Li‐Ion Storage of Binder‐Free Metal Vanadate/Carbon Hybrid Anode by Ion‐Exchange Reaction

Storing more energy in a limited device area is very challenging but crucial for the applications of flexible and wearable electronics. Metal vanadates have been regarded as a fascinating group of materials in many areas, especially in lithium‐ion storage. However, there has not been a versatile strategy to synthesize flexible metal vanadate hybrid nanostructures as binder‐free anodes for Li‐ion batteries so far. A convenient and versatile synthesis of M_xV_yO_x+2.5y@carbon cloth (M = Mn, Co, Ni, Cu) composites is proposed here based on a two‐step hydrothermal route. As‐synthesized products demonstrate hierarchical proliferous structure, ranging from nanoparticles (0D), and nanobelts (1D) to a 3D interconnected network. The metal vanadate/carbon hybrid nanostructures exhibit excellent lithium storage capability, with a high areal specific capacity up to 5.9 mAh cm^?2 (which equals to 1676.8 mAh g^?1) at a current density of 200 mA g^?1. Moreover, the nature of good flexibility, mixed valence states, and ultrahigh mass loading density (over 3.5 mg cm^?2) all guarantee their great potential in compact energy storage for future wearable devices and other related applications.     

Preparation of MoS2‐Coated Three‐Dimensional Graphene Networks for High‐Performance Anode Material in Lithium‐Ion Batteries

A novel composite, MoS₂‐coated three‐dimensional graphene network (3DGN), referred to as MoS₂/3DGN, is synthesized by a facile CVD method. The 3DGN, composed of interconnected graphene sheets, not only serves as template for the deposition of MoS₂, but also provides good electrical contact between the current collector and deposited MoS₂. As a proof of concept, the MoS₂/3DGN composite, used as an anode material for lithium‐ion batteries, shows excellent electrochemical performance, which exhibits reversible capacities of 877 and 665 mAh g^?1 during the 50^th cycle at current densities of 100 and 500 mA g^?1, respectively, indicating its good cycling performance. Furthermore, the MoS₂/3DGN composite also shows excellent high‐current‐density performance, e.g., depicts a 10^th‐cycle capacity of 466 mAh g^?1 at a high current density of 4 A g^?1.     

Metal‐Halide Perovskites for Gate Dielectrics in Field‐Effect Transistors and Photodetectors Enabled by PMMA Lift‐Off Process

Metal‐halide perovskites have emerged as promising materials for optoelectronics applications, such as photovoltaics, light‐emitting diodes, and photodetectors due to their excellent photoconversion efficiencies. However, their instability in aqueous solutions and most organic solvents has complicated their micropatterning procedures, which are needed for dense device integration, for example, in displays or cameras. In this work, a lift‐off process based on poly(methyl methacrylate) and deep ultraviolet lithography on flexible plastic foils is presented. This technique comprises simultaneous patterning of the metal‐halide perovskite with a top electrode, which results in microscale vertical device architectures with high spatial resolution and alignment properties. Hence, thin‐film transistors (TFTs) with methyl‐ammonium lead iodide (MAPbI₃) gate dielectrics are demonstrated for the first time. The giant dielectric constant of MAPbI₃ (>1000) leads to excellent low‐voltage TFT switching capabilities with subthreshold swings ≈80 mV decade^?1 over ≈5 orders of drain current magnitude. Furthermore, vertically stacked low‐power Au‐MAPbI₃‐Au photodetectors with close‐to‐ideal linear response (R² = 0.9997) are created. The mechanical stability down to a tensile radius of 6 mm is demonstrated for the TFTs and photodetectors, simultaneously realized on the same flexible plastic substrate. These results open the way for flexible low‐power integrated (opto‐)electronic systems based on metal‐halide perovskites.     

Penne‐Like MoS2/Carbon Nanocomposite as Anode for Sodium‐Ion‐Based Dual‐Ion Battery

The dual‐ion battery (DIB) system has attracted great attention owing to its merits of low cost, high energy, and environmental friendliness. However, the DIBs based on sodium‐ion electrolytes are seldom reported due to the lack of appropriate anode materials for reversible Na⁺ insertion/extraction. Herein, a new sodium‐ion based DIB named as MoS₂/C‐G DIB using penne‐like MoS₂/C nanotube as anode and expanded graphite as cathode is constructed and optimized for the first time. The hierarchical MoS₂/C nanotube provides expanded (002) interlayer spacing of 2H‐MoS₂, which facilitates fast Na⁺ insertion/extraction reaction kinetics, thus contributing to improved DIB performance. The MoS₂/C‐G DIB delivers a reversible capacity of 65 mA h g^?1 at 2 C in the voltage window of 1.0–4.0 V, with good cycling performance for 200 cycles and 85% capacity retention, indicating the feasibility of potential applications for sodium‐ion based DIBs.     

3D 1T‐MoS2/CoS2 Heterostructure via Interface Engineering for Ultrafast Hydrogen Evolution Reaction

Metallic phase (1T) MoS₂ has been regarded as an appealing material for hydrogen evolution reaction. In this work, a novel interface‐induced strategy is reported to achieve stable and high‐percentage 1T MoS₂ through highly active 1T‐MoS₂/CoS₂ hetero‐nanostructure. Herein, a large number of heterointerfaces can be obtained by interlinked 1T‐MoS₂ and CoS₂ nanosheets in situ grown from the molybdate cobalt oxide nanorod under moderate conditions. Owing to the strong interaction between MoS₂ and CoS₂, high‐percentage of metallic‐phase (1T) MoS₂ of 76.6% can be achieved, leading to high electroconductivity and abundant active sites compared to 2H MoS₂. Furthermore, the interlinked MoS₂ and CoS₂ nanosheets can effectively disperse the nanosheets so as to enlarge the exposed active surface area. The near zero free energy of hydrogen adsorption at the heterointerface can also be achieved, indicating the fast kinetics and excellent catalytic activity induced by heterojunction. Therefore, when applied in hydrogen evolution reaction (HER), 1T‐MoS₂/CoS₂ heterostructure delivers low overpotential of 71 and 26 mV at the current density of 10 mA cm^?2 with low Tafel slops of 60 and 43 mV dec^?1, respectively in alkaline and acidic conditions.     

Carbon‐MEMS‐Based Alternating Stacked MoS2@rGO‐CNT Micro‐Supercapacitor with High Capacitance and Energy Density

A novel process to fabricate a carbon‐microelectromechanical‐system‐based alternating stacked MoS₂@rGO–carbon‐nanotube (CNT) micro‐supercapacitor (MSC) is reported. The MSC is fabricated by successively repeated spin‐coating of MoS₂@rGO/photoresist and CNT/photoresist composites twice, followed by photoetching, developing, and pyrolysis. MoS₂@rGO and CNTs are embedded in the carbon microelectrodes, which cooperatively enhance the performance of the MSC. The fabricated MSC exhibits a high areal capacitance of 13.7 mF cm^?2 and an energy density of 1.9 µWh cm^?2 (5.6 mWh cm^?3), which exceed many reported carbon‐ and MoS₂‐based MSCs. The MSC also retains 68% of capacitance at a current density of 2 mA cm^?2 (5.9 A cm^?3) and an outstanding cycling performance (96.6% after 10 000 cycles, at a scan rate of 1 V s^?1). Compared with other MSCs, the MSC in this study is fabricated by a low‐cost and facile process, and it achieves an excellent and stable electrochemical performance. This approach could be highly promising for applications in integration of micro/nanostructures into microdevices/systems.