Near‐Infrared Photodetectors Based on MoTe2/Graphene Heterostructure with High Responsivity and Flexibility

2D transition metal dichalcogenides (TMDCs) have attracted considerable attention due to their impressively high performance in optoelectronic devices. However, efficient infrared (IR) photodetection has been significantly hampered because the absorption wavelength range of most TMDCs lies in the visible spectrum. In this regard, semiconducting 2D MoTe₂ can be an alternative choice owing to its smaller band gap ≈1 eV from bulk to monolayer and high carrier mobility. Here, a MoTe₂/graphene heterostructure photodetector is demonstrated for efficient near‐infrared (NIR) light detection. The devices achieve a high responsivity of ≈970.82 A W^?1 (at 1064 nm) and broadband photodetection (visible‐1064 nm). Because of the effective photogating effect induced by electrons trapped in the localized states of MoTe₂, the devices demonstrate an extremely high photoconductive gain of 4.69 × 10⁸ and detectivity of 1.55 × 10¹¹ cm Hz^1/2 W^?1. Moreover, flexible devices based on the MoTe₂/graphene heterostructure on flexible substrate also retains a good photodetection ability after thousands of times bending test (1.2% tensile strain), with a high responsivity of ≈60 A W^?1 at 1064 nm at V _DS = 1 V, which provides a promising platform for highly efficient, flexible, and low cost broadband NIR photodetectors.     

Black Phosphorus (BP) Nanodots for Potential Biomedical Applications

Recently, the appeal of 2D black phosphorus (BP) has been rising due to its unique optical and electronic properties with a tunable band gap (≈0.3–1.5 eV). While numerous research efforts have recently been devoted to nano‐ and optoelectronic applications of BP, no attention has been paid to promising medical applications. In this article, the preparation of BP‐nanodots of a few nm to <20 nm with an average diameter of ≈10 nm and height of ≈8.7 nm is reported by a modified ultrasonication‐assisted solution method. Stable formation of nontoxic phosphates and phosphonates from BP crystals with exposure in water or air is observed. As for the BP‐nanodot crystals’ stability (ionization and persistence of fluorescent intensity) in aqueous solution, after 10 d, ≈80% at 1.5 mg mL^?1 are degraded (i.e., ionized) in phosphate buffered saline. They showed no or little cytotoxic cell‐viability effects in vitro involving blue‐ and green‐fluorescence cell imaging. Thus, BP‐nanodots can be considered a promising agent for drug delivery or cellular tracking systems.     

Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near‐Infrared Phototransistors

As a member of the group IVB transition metal dichalcogenides (TMDs) family, hafnium disulfide (HfS₂) is recently predicted to exhibit higher carrier mobility and higher tunneling current density than group VIB (Mo and W) TMDs. However, the synthesis of high‐quality HfS₂ crystals, sparsely reported, has greatly hindered the development of this new field. Here, a facile strategy for controlled synthesis of high‐quality atomic layered HfS₂ crystals by van der Waals epitaxy is reported. Density functional theory calculations are applied to elucidate the systematic epitaxial growth process of the S‐edge and Hf‐edge. Impressively, the HfS₂ back‐gate field‐effect transistors display a competitive mobility of 7.6 cm² V^?1 s^?1 and an ultrahigh on/off ratio exceeding 10⁸. Meanwhile, ultrasensitive near‐infrared phototransistors based on the HfS₂ crystals (indirect bandgap ≈1.45 eV) exhibit an ultrahigh responsivity exceeding 3.08 × 10⁵ A W^?1, which is 10⁹‐fold higher than 9 × 10^?5 A W^?1 obtained from the multilayer MoS₂ in near‐infrared photodetection. Moreover, an ultrahigh photogain exceeding 4.72 × 10⁵ and an ultrahigh detectivity exceeding 4.01 × 10¹² Jones, superior to the vast majority of the reported 2D‐materials‐based phototransistors, imply a great promise in TMD‐based 2D electronic and optoelectronic applications.     

Ultrafast Growth of High‐Quality Monolayer WSe2 on Au

The ultrafast growth of high‐quality uniform monolayer WSe₂ is reported with a growth rate of ≈26 µm s^?1 by chemical vapor deposition on reusable Au substrate, which is ≈2–3 orders of magnitude faster than those of most 2D transition metal dichalcogenides grown on nonmetal substrates. Such ultrafast growth allows for the fabrication of millimeter‐size single‐crystal WSe₂ domains in ≈30 s and large‐area continuous films in ≈60 s. Importantly, the ultrafast grown WSe₂ shows excellent crystal quality and extraordinary electrical performance comparable to those of the mechanically exfoliated samples, with a high mobility up to ≈143 cm² V^?1 s^?1 and ON/OFF ratio up to 9 × 10⁶ at room temperature. Density functional theory calculations reveal that the ultrafast growth of WSe₂ is due to the small energy barriers and exothermic characteristic for the diffusion and attachment of W and Se on the edges of WSe₂ on Au substrate.     

Black Phosphorus Revisited: A Missing Metal‐Free Elemental Photocatalyst for Visible Light Hydrogen Evolution

Metal‐free elemental photocatalysts for hydrogen (H₂) evolution are more advantageous than the traditional metal‐based inorganic photocatalysts since the nonmetal elements are generally cheaper, more earth‐abundant, and environmentally friendly. Black phosphorus (BP) has been attracting increasing attention in recent years based on its anisotropic 2D layered structure with tunable bandgap in the range of 0.3–2.0 eV; however, the application of BP for photocatalytic H₂ evolution has been scarcely reported experimentally although being theoretically predicted. Herein, for the first time, the visible light photocatalytic H₂ evolution of BP nanosheets prepared via a facile solid‐state mechanochemical method by ball‐milling bulk BP is reported. Without using any noble metal cocatalyst, the visible light photocatalytic hydrogen evolution rate of BP nanosheets reaches 512 µmol h^?1 g^?1, which is ≈18 times higher than that of the bulk BP, and is comparable or even higher than that of graphitic carbon nitrides (g‐C₃N₄).     

Thiophene‐Bridged Donor–Acceptor sp2‐Carbon‐Linked 2D Conjugated Polymers as Photocathodes for Water Reduction

Photoelectrochemical (PEC) water reduction, converting solar energy into environmentally friendly hydrogen fuel, requires delicate design and synthesis of semiconductors with appropriate bandgaps, suitable energy levels of the frontier orbitals, and high intrinsic charge mobility. In this work, the synthesis of a novel bithiophene‐bridged donor–acceptor‐based 2D sp²‐carbon‐linked conjugated polymer (2D CCP) is demonstrated. The Knoevenagel polymerization between the electron‐accepting building block 2,3,8,9,14,15‐hexa(4‐formylphenyl) diquinoxalino[2,3‐a:2′,3′‐c]phenazine (HATN‐6CHO) and the first electron‐donating linker 2,2′‐([2,2′‐bithiophene]‐5,5′‐diyl)diacetonitrile (ThDAN) provides the 2D CCP‐HATNThDAN (2D CCP‐Th). Compared with the corresponding biphenyl‐bridged 2D CCP‐HATN‐BDAN (2D CCP‐BD), the bithiophene‐based 2D CCP‐Th exhibits a wide light‐harvesting range (up to 674 nm), a optical energy gap (2.04 eV), and highest energy occupied molecular orbital–lowest unoccupied molecular orbital distributions for facilitated charge transfer, which make 2D CCP‐Th a promising candidate for PEC water reduction. As a result, 2D CCP‐Th presents a superb H₂‐evolution photocurrent density up to ≈7.9 µA cm^?2 at 0 V versus reversible hydrogen electrode, which is superior to the reported 2D covalent organic frameworks and most carbon nitride materials (0.09–6.0 µA cm^?2). Density functional theory calculations identify the thiophene units and cyano substituents at the vinylene linkage as active sites for the evolution of H₂.     

Chemical Patterning of High‐Mobility Semiconducting 2D Bi2O2Se Crystals for Integrated Optoelectronic Devices

Patterning of high‐mobility 2D semiconducting materials with unique layered structures and superb electronic properties offers great potential for batch fabrication and integration of next‐generation electronic and optoelectronic devices. Here, a facile approach is used to achieve accurate patterning of 2D high‐mobility semiconducting Bi₂O₂Se crystals using dilute H₂O₂ and protonic mixture acid as efficient etchants. The 2D Bi₂O₂Se crystal after chemical etching maintains a high Hall mobility of over 200 cm² V^?1 s^?1 at room temperature. Centimeter‐scale well‐ordered arrays of 2D Bi₂O₂Se with tailorable configurations are readily obtained. Furthermore, integrated photodetectors based on 2D Bi₂O₂Se arrays are fabricated, exhibiting excellent air stability and high photoresponsivity of ≈2000 A W^?1 at 532 nm. These results are one step towards the practical application of ultrathin 2D integrated digital and optoelectronic circuits.     

Gap‐Mode Surface‐Plasmon‐Enhanced Photoluminescence and Photoresponse of MoS2

2D materials hold great potential for designing novel electronic and optoelectronic devices. However, 2D material can only absorb limited incident light. As a representative 2D semiconductor, monolayer MoS₂ can only absorb up to 10% of the incident light in the visible, which is not sufficient to achieve a high optical‐to‐electrical conversion efficiency. To overcome this shortcoming, a “gap‐mode” plasmon‐enhanced monolayer MoS₂ fluorescent emitter and photodetector is designed by squeezing the light‐field into Ag shell‐isolated nanoparticles–Au film gap, where the confined electromagnetic field can interact with monolayer MoS₂. With this gap‐mode plasmon‐enhanced configuration, a 110‐fold enhancement of photoluminescence intensity is achieved, exceeding values reached by other plasmon‐enhanced MoS₂ fluorescent emitters. In addition, a gap‐mode plasmon‐enhanced monolayer MoS₂ photodetector with an 880% enhancement in photocurrent and a responsivity of 287.5 A W^?1 is demonstrated, exceeding previously reported plasmon‐enhanced monolayer MoS₂ photodetectors.     

Large‐Scale Growth and Field‐Effect Transistors Electrical Engineering of Atomic‐Layer SnS2

2D layers of metal dichalcogenides are of considerable interest for high‐performance electronic devices for their unique electronic properties and atomically thin geometry. 2D SnS₂ nanosheets with a bandgap of ≈2.6 eV have been attracting intensive attention as one potential candidate for modern electrocatalysis, electronic, and/or optoelectronic fields. However, the controllable growth of large‐size and high‐quality SnS₂ atomic layers still remains a challenge. Herein, a salt‐assisted chemical vapor deposition method is provided to synthesize atomic‐layer SnS₂ with a large crystal size up to 410 µm and good uniformity. Particularly, the as‐fabricated SnS₂ nanosheet‐based field‐effect transistors (FETs) show high mobility (2.58 cm² V^?1 s^?1) and high on/off ratio (≈10⁸), which is superior to other reported SnS₂‐based FETs. Additionally, the effects of temperature on the electrical properties are systematically investigated. It is shown that the scattering mechanism transforms from charged impurities scattering to electron–phonon scattering with the temperature. Moreover, SnS₂ can serve as an ideal material for energy storage and catalyst support. The high performance together with controllable growth of SnS₂ endow it with great potential for future applications in electrocatalysis, electronics, and optoelectronics.     

Graphene–Ruthenium Complex Hybrid Photodetectors with Ultrahigh Photoresponsivity

The maximum responsivity of a pure monolayer graphene‐based photodetector is currently less than 10 mA W^?1 because of small optical absorption and short recombination lifetime. Here, a graphene hybrid photodetector functionalized with a photoactive ruthenium complex that shows an ultrahigh responsivity of ≈1 × 10⁵ A W^?1 and a photoconductive gain of ≈3 × 10⁶ under incident optical intensity of the order of sub‐milliwatts is reported. This responsivity is two orders of magnitude higher than the precedent best performance of graphene‐based photodetectors under a similar incident light intensity. Upon functionalization with a 4‐nm‐thick ruthenium complex, monolayer graphene‐based photodetectors exhibit pronounced n‐type doping effect due to electron transfer via the metal?ligand charge transfer (MLCT) from the ruthenium complex to graphene. The ultrahigh responsivity is attributed to the long lifetime and high mobility of the photoexcited charge carriers. This approach is highly promising for improving the responsivity of graphene‐based photodetectors.     

2D Ca3Sn2S7 Chalcogenide Perovskite: A Graphene‐Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7 × 104 cm2 V−1 s−1

Graphene, a star 2D material, has attracted much attention because of its unique properties including linear electronic dispersion, massless carriers, and ultrahigh carrier mobility (10⁴–10⁵ cm² V^?1 s^?1). However, its zero bandgap greatly impedes its application in the semiconductor industry. Opening the zero bandgap has become an unresolved worldwide problem. Here, a novel and stable 2D Ruddlesden–Popper‐type layered chalcogenide perovskite semiconductor Ca₃Sn₂S₇ is found based on first‐principles GW calculations, which exhibits excellent electronic, optical, and transport properties, as well as soft and isotropic mechanical characteristics. Surprisingly, it has a graphene‐like linear electronic dispersion, small carrier effective mass (0.04 m₀), ultrahigh room‐temperature carrier mobility (6.7 × 10⁴ cm² V^?1 s^?1), Fermi velocity (3 × 10⁵ m s^?1), and optical absorption coefficient (10⁵ cm^?1). Particularly, it has a direct quasi‐particle bandgap of 0.5 eV, which realizes the dream of opening the graphene bandgap in a new way. These results guarantee its application in infrared optoelectronic and high‐speed electronic devices.     

Metal‐Ion‐Modified Black Phosphorus with Enhanced Stability and Transistor Performance

Black phosphorus (BP), a burgeoning elemental 2D semiconductor, has aroused increasing scientific and technological interest, especially as a channel material in field‐effect transistors (FETs). However, the intrinsic instability of BP causes practical concern and the transistor performance must also be improved. Here, the use of metal‐ion modification to enhance both the stability and transistor performance of BP sheets is described. Ag⁺ spontaneously adsorbed on the BP surface via cation–π interactions passivates the lone‐pair electrons of P thereby rendering BP more stable in air. Consequently, the Ag⁺‐modified BP FET shows greatly enhanced hole mobility from 796 to 1666 cm² V^?1 s^?1 and ON/OFF ratio from 5.9 × 10⁴ to 2.6 × 10⁶. The mechanisms pertaining to the enhanced stability and transistor performance are discussed and the strategy can be extended to other metal ions such as Fe³⁺, Mg²⁺, and Hg²⁺. Such stable and high‐performance BP transistors are crucial to electronic and optoelectronic devices. The stability and semiconducting properties of BP sheets can be enhanced tremendously by this novel strategy.     

Twinned Growth of Metal‐Free,Triazine‐Based Photocatalyst Films as Mixed‐Dimensional (2D/3D) van der Waals Heterostructures

Design and synthesis of ordered, metal‐free layered materials is intrinsically difficult due to the limitations of vapor deposition processes that are used in their making. Mixed‐dimensional (2D/3D) metal‐free van der Waals (vdW) heterostructures based on triazine (C₃N₃) linkers grow as large area, transparent yellow‐orange membranes on copper surfaces from solution. The membranes have an indirect band gap (E _g,opt = 1.91 eV, E _g,elec = 1.84 eV) and are moderately porous (124 m² g^?1). The material consists of a crystalline 2D phase that is fully sp² hybridized and provides structural stability, and an amorphous, porous phase with mixed sp²–sp hybridization. Interestingly, this 2D/3D vdW heterostructure grows in a twinned mechanism from a one‐pot reaction mixture: unprecedented for metal‐free frameworks and a direct consequence of on‐catalyst synthesis. Thanks to the efficient type I heterojunction, electron transfer processes are fundamentally improved and hence, the material is capable of metal‐free, light‐induced hydrogen evolution from water without the need for a noble metal cocatalyst (34 µmol h^?1 g^?1 without Pt). The results highlight that twinned growth mechanisms are observed in the realm of “wet” chemistry, and that they can be used to fabricate otherwise challenging 2D/3D vdW heterostructures with composite properties.     

Few‐Layer GeAs Field‐Effect Transistors and Infrared Photodetectors

The family of 2D semiconductors (2DSCs) has grown rapidly since the first isolation of graphene. The emergence of each 2DSC material brings considerable excitement for its unique electrical, optical, and mechanical properties, which are often highly distinct from their 3D counterparts. To date, studies of 2DSC are majorly focused on group IV (e.g., graphene, silicene), group V (e.g., phosphorene), or group VIB compounds (transition metal dichalcogenides, TMD), and have inspired considerable effort in searching for novel 2DSCs. Here, the first electrical characterization of group IV–V compounds is presented by investigating few‐layer GeAs field‐effect transistors. With back‐gate device geometry, p‐type behaviors are observed at room temperature. Importantly, the hole carrier mobility is found to approach 100 cm² V^?1 s^?1 with ON–OFF ratio over 10⁵, comparable well with state‐of‐the‐art TMD devices. With the unique crystal structure the few‐layer GeAs show highly anisotropic optical and electronic properties (anisotropic mobility ratio of 4.8). Furthermore, GeAs based transistor shows prominent and rapid photoresponse to 1.6 µm radiation with a photoresponsivity of 6 A W^?1 and a rise and fall time of ≈3 ms. This study of group IV–V 2DSC materials greatly expands the 2D family, and can enable new opportunities in functional electronics and optoelectronics based on 2DSCs.     

High Mobility 2D Palladium Diselenide Field‐Effect Transistors with Tunable Ambipolar Characteristics

Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe₂), a noble‐transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field‐effect transistors (FETs) based on ultrathin PdSe₂ show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe₂ to exhibit electron‐dominated transport with high mobility (µ _{e (max)} = 216 cm² V^?1 s^?1) and on/off ratio up to 10³. Hole‐dominated‐transport PdSe₂ can be obtained by molecular doping using F₄‐TCNQ. This pioneer work on PdSe₂ will spark interests in the less explored regime of noble‐TMDCs.     

Homogeneous 2D MoTe2 p–n Junctions and CMOS Inverters formed by Atomic‐Layer‐Deposition‐Induced Doping

Recently, α‐MoTe₂, a 2D transition‐metal dichalcogenide (TMD), has shown outstanding properties, aiming at future electronic devices. Such TMD structures without surface dangling bonds make the 2D α‐MoTe₂ a more favorable candidate than conventional 3D Si on the scale of a few nanometers. The bandgap of thin α‐MoTe₂ appears close to that of Si and is quite smaller than those of other typical TMD semiconductors. Even though there have been a few attempts to control the charge‐carrier polarity of MoTe₂, functional devices such as p–n junction or complementary metal–oxide–semiconductor (CMOS) inverters have not been reported. Here, we demonstrate a 2D CMOS inverter and p–n junction diode in a single α‐MoTe₂ nanosheet by a straightforward selective doping technique. In a single α‐MoTe₂ flake, an initially p‐doped channel is selectively converted to an n‐doped region with high electron mobility of 18 cm² V^?1 s^?1 by atomic‐layer‐deposition‐induced H‐doping. The ultrathin CMOS inverter exhibits a high DC voltage gain of 29, an AC gain of 18 at 1 kHz, and a low static power consumption of a few nanowatts. The results show a great potential of α‐MoTe₂ for future electronic devices based on 2D semiconducting materials.     

Synthesis of Large‐Area InSe Monolayers by Chemical Vapor Deposition

Recently, 2D materials of indium selenide (InSe) layers have attracted much attention from the scientific community due to their high mobility transport and fascinating physical properties. To date, reports on the synthesis of high‐quality and scalable InSe atomic films are limited. Here, a synthesis of InSe atomic layers by vapor phase selenization of In₂O₃ in a chemical vapor deposition (CVD) system, resulting in large‐area monolayer flakes or thin films, is reported. The atomic films are continuous and uniform over a large area of 1 × 1 cm², comprising of primarily InSe monolayers. Spectroscopic and microscopic measurements reveal the highly crystalline nature of the synthesized InSe monolayers. The ion‐gel‐gated field‐effect transistors based on CVD InSe monolayers exhibit n‐type channel behaviors, where the field effect electron mobility values can be up to ≈30 cm² V^?1 s^?1 along with an on/off current ratio, of >10⁴ at room temperature. In addition, the graphene can serve as a protection layer to prevent the oxidation between InSe and the ambient environment. Meanwhile, the synthesized InSe films can be transferred to arbitrary substrates, enabling the possibility of reassembly of various 2D materials into vertically stacked heterostructures, prompting research efforts to probe its characteristics and applications.     

In Situ Intercalation of Bismuth into 3D Reduced Graphene Oxide Scaffolds for High Capacity and Long Cycle‐Life Energy Storage

Metal anodes, such as zinc and bismuth have been regarded as ideal materials for aqueous batteries due to high gravimetrical capacity, high abundance, low toxicity, and intrinsic safety. However, their translation into practical applications are hindered by the low mass loading (≈1 mg cm^?2) of active materials. Here, the multiscale integrated structural engineering of 3D scaffold and active material, i.e., bismuth is in situ intercalated in reduced graphene oxide (rGO) wall of network, are reported. Tailoring the rapid charge transport on rGO 3D network and facile access to nano‐ and microscale bismuth, the rGO/Bi hybrid anode shows high utilization efficiency of 91.4% at effective high load density of ≈40 mg cm^?2, high areal capacity of 3.51 mAh cm^?2 at the current density of 2 mA cm^?2 and high reversibility of >10 000 cycles. The resulting Ni‐Bi full battery exhibits high areal capacity of 3.13 mAh cm^?2 at the current density of 2 mA cm^?2, far outperforming the other counterpart batteries. It represents a general and efficient strategy in enhancing the battery performance by designing hierarchically networked structure.     

Alkali‐Metal‐Intercalated Percolation Network Regulates Self‐Assembled Electronic Aromatic Molecules

In the continuously growing field of correlated electronic molecular crystals, there is significant interest in addressing alkali‐metal‐intercalated aromatic hydrocarbons, in which the possibility of high‐temperature superconductivity emerges. However, searching for superconducting aromatic molecular crystals remains elusive due to their small shielding fraction volume. To exploit this potential, a design principle for percolation networks of technologically important film geometry is indispensable. Here the effect of potassium‐intercalation is shown on the percolation network in self‐assembled aromatic molecular crystals. It is demonstrated that one‐dimensional (1D) dipole pairs, induced by dipole interaction, regulate the conductivity, as well as the electronic and optical transitions, in alkali‐metal‐intercalated molecular electronic crystals. A solid‐solution growth methodology of aromatic molecular films with a broad range of stability is developed to uncover electronic and optical transitions of technological importance. The light‐induced electron interactions enhance the charge‐carrier itinerancy, leading to a switchable metal‐to‐insulator transition. This discovery opens a route for the development of aromatic molecular electronic solids and long‐term modulation of electronic efficacy in nanotechnologically important thin films.     

Molecular Beam Epitaxy Scalable Growth of Wafer‐Scale Continuous Semiconducting Monolayer MoTe2 on Inert Amorphous Dielectrics

Monolayer MoTe₂, with the narrowest direct bandgap of ≈1.1 eV among Mo‐ and W‐based transition metal dichalcogenides, has attracted increasing attention as a promising candidate for applications in novel near‐infrared electronics and optoelectronics. Realizing 2D lateral growth is an essential prerequisite for uniform thickness and property control over the large scale, while it is not successful yet. Here, layer‐by‐layer growth of 2 in. wafer‐scale continuous monolayer 2H‐MoTe₂ films on inert SiO₂ dielectrics by molecular beam epitaxy is reported. A single‐step Mo‐flux controlled nucleation and growth process is developed to suppress island growth. Atomically flat 2H‐MoTe₂ with 100% monolayer coverage is successfully grown on inert 2 in. SiO₂/Si wafer, which exhibits highly uniform in‐plane structural continuity and excellent phonon‐limited carrier transport behavior. The dynamics‐controlled growth recipe is also extended to fabricate continuous monolayer 2H‐MoTe₂ on atomic‐layer‐deposited Al₂O₃ dielectric. With the breakthrough in growth of wafer‐scale continuous 2H‐MoTe₂ monolayers on device compatible dielectrics, batch fabrication of high‐mobility monolayer 2H‐MoTe₂ field‐effect transistors and the three‐level integration of vertically stacked monolayer 2H‐MoTe₂ transistor arrays for 3D circuitry are successfully demonstrated. This work provides novel insights into the scalable synthesis of monolayer 2H‐MoTe₂ films on universal substrates and paves the way for the ultimate miniaturization of electronics.