Infrared Solution‐Processed Quantum Dot Solar Cells Reaching External Quantum Efficiency of 80% at 1.35 µm and Jsc in Excess of 34 mA cm−2

Developing low‐cost photovoltaic absorbers that can harvest the short‐wave infrared (SWIR) part of the solar spectrum, which remains unharnessed by current Si‐based and perovskite photovoltaic technologies, is a prerequisite for making high‐efficiency, low‐cost tandem solar cells. Here, infrared PbS colloidal quantum dot (CQD) solar cells employing a hybrid inorganic–organic ligand exchange process that results in an external quantum efficiency of 80% at 1.35 µm are reported, leading to a short‐circuit current density of 34 mA cm^?2 and a power conversion efficiency (PCE) up to 7.9%, which is a current record for SWIR CQD solar cells. When this cell is placed at the back of an MAPbI₃ perovskite film, it delivers an extra 3.3% PCE by harnessing light beyond 750 nm.     

Trap‐State Suppression and Improved Charge Transport in PbS Quantum Dot Solar Cells with Synergistic Mixed‐Ligand Treatments

The power conversion efficiency of colloidal PbS‐quantum‐dot (QD)‐based solar cells is significantly hampered by lower‐than‐expected open circuit voltage (V_OC). The V_OC deficit is considerably higher in QD‐based solar cells compared to other types of existing solar cells due to in‐gap trap‐induced bulk recombination of photogenerated carriers. Here, this study reports a ligand exchange procedure based on a mixture of zinc iodide and 3‐mercaptopropyonic acid to reduce the V_OC deficit without compromising the high current density. This layer‐by‐layer solid state ligand exchange treatment enhances the photovoltaic performance from 6.62 to 9.92% with a significant improvement in V_OC from 0.58 to 0.66 V. This study further employs optoelectronic characterization, X‐ray photoelectron spectroscopy, and photoluminescence spectroscopy to understand the origin of V_OC improvement. The mixed‐ligand treatment reduces the sub‐bandgap traps and significantly reduces bulk recombination in the devices.     

A Layer‐by‐Layer ZnO Nanoparticle–PbS Quantum Dot Self‐Assembly Platform for Ultrafast Interfacial Electron Injection

Absorbent layers of semiconductor quantum dots (QDs) are now used as material platforms for low‐cost, high‐performance solar cells. The semiconductor metal oxide nanoparticles as an acceptor layer have become an integral part of the next generation solar cell. To achieve sufficient electron transfer and subsequently high conversion efficiency in these solar cells, however, energy‐level alignment and interfacial contact between the donor and the acceptor units are needed. Here, the layer‐by‐layer (LbL) technique is used to assemble ZnO nanoparticles (NPs), providing adequate PbS QD uptake to achieve greater interfacial contact compared with traditional sputtering methods. Electron injection at the PbS QD and ZnO NP interface is investigated using broadband transient absorption spectroscopy with 120 femtosecond temporal resolution. The results indicate that electron injection from photoexcited PbS QDs to ZnO NPs occurs on a time scale of a few hundred femtoseconds. This observation is supported by the interfacial electronic‐energy alignment between the donor and acceptor moieties. Finally, due to the combination of large interfacial contact and ultrafast electron injection, this proposed platform of assembled thin films holds promise for a variety of solar cell architectures and other settings that principally rely on interfacial contact, such as photocatalysis.     

Hybrid PbS Quantum‐Dot‐in‐Perovskite for High‐Efficiency Perovskite Solar Cell

In this study, a facile and effective approach to synthesize high‐quality perovskite‐quantum dots (QDs) hybrid film is demonstrated, which dramatically improves the photovoltaic performance of a perovskite solar cell (PSC). Adding PbS QDs into CH₃NH₃PbI₃ (MAPbI₃) precursor to form a QD‐in‐perovskite structure is found to be beneficial for the crystallization of perovskite, revealed by enlarged grain size, reduced fragmentized grains, enhanced characteristic peak intensity, and large percentage of (220) plane in X‐ray diffraction patterns. The hybrid film also shows higher carrier mobility, as evidenced by Hall Effect measurement. By taking all these advantages, the PSC based on MAPbI₃‐PbS hybrid film leads to an improvement in power conversion efficiency by 14% compared to that based on pure perovskite, primarily ascribed to higher current density and fill factor (FF). Ultimately, an efficiency reaching up to 18.6% and a FF of over ≈0.77 are achieved based on the PSC with hybrid film. Such a simple hybridizing technique opens up a promising method to improve the performance of PSCs, and has strong potential to be applied to prepare other hybrid composite materials.     

Bilayer PbS Quantum Dots for High‐Performance Photodetectors

Due to their wide tunable bandgaps, high absorption coefficients, easy solution processabilities, and high stabilities in air, lead sulfide (PbS) quantum dots (QDs) are increasingly regarded as promising material candidates for next‐generation light, low‐cost, and flexible photodetectors. Current single‐layer PbS‐QD photodetectors suffer from shortcomings of large dark currents, low on–off ratios, and slow light responses. Integration with metal nanoparticles, organics, and high‐conducting graphene/nanotube to form hybrid PbS‐QD devices are proved capable of enhancing photoresponsivity; but these approaches always bring in other problems that can severely hamper the improvement of the overall device performance. To overcome the hurdles current single‐layer and hybrid PbS‐QD photodetectors face, here a bilayer QD‐only device is designed, which can be integrated on flexible polyimide substrate and significantly outperforms the conventional single‐layer devices in response speed, detectivity, linear dynamic range, and signal‐to‐noise ratio, along with comparable responsivity. The results which are obtained here should be of great values in studying and designing advanced QD‐based photodetectors for applications in future flexible optoelectronics.     

Tuning Solute‐Redistribution Dynamics for Scalable Fabrication of Colloidal Quantum‐Dot Optoelectronics

Solution‐processed colloidal quantum dots (CQDs) are attractive materials for the realization of low‐cost and efficient optoelectronic devices. Although impressive CQD‐solar‐cell performance has been achieved, the fabrication of CQD films is still limited to laboratory‐scale small areas because of the complicated deposition of CQD inks. Large‐area, uniform deposition of lead sulfide (PbS) CQD inks is successfully realized for photovoltaic device applications by engineering the solute redistribution of CQD droplets. It is shown experimentally and theoretically that the solute‐redistribution dynamics of CQD droplets are highly dependent on the movement of the contact line and on the evaporation kinetics of the solvent. By lowering the friction constant of the contact line and increasing the evaporation rate of the droplets, a uniform deposition of CQD ink in length and width over large areas is realized. By utilizing a spray‐coating process, large‐area (up to 100 cm²) CQD films are fabricated with 3–7% thickness variation on various substrates including glass, indium tin oxide glass, and polyethylene terephthalate. Furthermore, scalable fabrication of CQD solar cells is demonstrated with 100 cm² CQD films which exhibits a notably high efficiency of 8.10%.     

Highly Efficient Inverted Structural Quantum Dot Solar Cells

Highly efficient PbS colloidal quantum dot (QD) solar cells based on an inverted structure have been missing for a long time. The bottlenecks are the construction of an effective p–n heterojunction at the illumination side with smooth band alignment and the absence of serious interface carrier recombination. Here, solution‐processed nickel oxide (NiO) as the p‐type layer and lead sulfide (PbS) QDs with iodide ligand as the n‐type layer are explored to build a p–n heterojunction at the illumination side. The large depletion region in the QD layer at the illumination side leads to high photocurrent. Interface carrier recombination at the interface is effectively prohibited by inserting a layer of slightly doped p‐type QDs with 1,2‐ethanedithiol as ligands, leading to improved voltage of the device. Based on this graded device structure design, the efficiency of inverted structural heterojunction PbS QD solar cells is improved to 9.7%, one time higher than the highest efficiency achieved before.     

Improved Charge Extraction Beyond Diffusion Length by Layer‐by‐Layer Multistacking Intercalation of Graphene Layers inside Quantum Dots Films

Charge collection is critical in any photodetector or photovoltaic device. Novel materials such as quantum dots (QDs) have extraordinary light absorption properties, but their poor mobility and short diffusion length limit efficient charge collection using conventional top/bottom contacts. In this work, a novel architecture based on multiple intercalated chemical vapor deposition graphene monolayers distributed in an orderly manner inside a QD film is studied. The intercalated graphene layers ensure that at any point in the absorbing material, photocarriers will be efficiently collected and transported. The devices with intercalated graphene layers have superior quantum efficiency over single‐bottom graphene/QD devices, overcoming the known restriction that the diffusion length imposes on film thickness. QD film with increased thickness shows efficient charge collection over the entire λ ≈ 500–1000 nm spectrum. This architecture could be applied to boost the performance of other low‐cost materials with poor mobility, allowing efficient collection for films thicker than their diffusion length.     

Efficient Flexible Solar Cell based on Composition‐Tailored Hybrid Perovskite

Organic–inorganic hybrid perovskites (OIHPs) are new photoactive layer candidates for lightweight and flexible solar cells due to their low‐temperature process capability; however, the reported efficiency of flexible OIHP devices is far behind those achieved on rigid glass substrates. Here, it is revealed that the limiting factor is the different perovskite film deposition conditions required to form the same film morphology on flexible substrates. An optimized perovskite film composition needs a different precursor ratio, which is found to be essential for the formation of high‐quality perovskite films with longer radiative carrier recombination lifetime, smaller density of trap states, reduced precursor residue, and uniform and pin‐hole free films. A record efficiency of 18.1% is achieved for the flexible perovskite solar‐cell devices made on an indium tin oxide/poly(ethylene terephthalate) substrate via a low temperature (≤100 °C) solution process.     

An Air Knife–Assisted Recrystallization Method for Ambient‐Process Planar Perovskite Solar Cells and Its Dim‐Light Harvesting

The photovoltaic performance of perovskite solar cells is highly dependent on the control of morphology and crystallization of perovskite film, which usually requires a controlled atmosphere. Therefore, fully ambient fabrication is a desired technology for the development of perovskite solar cells toward real production. Here, an air‐knife assisted recrystallization method is reported, based on a simple bath‐immersion to prepare high‐quality perovskite absorbers. The resulted film shows a strong crystallinity with pure domains and low trap‐state density, which contribute to the device performance and stability. The proposed method can operate in a wide process window, such as variable relative humidity and bath‐immersion conditions, demonstrating a power conversion efficiency over 19% and 27% under 1 sun and 500–2000 lux dim‐light illumination respectively, which is among the highest performance of ambient‐process perovskite solar cells.     

Inkjet‐Printed High‐Efficiency Multilayer QLEDs Based on a Novel Crosslinkable Small‐Molecule Hole Transport Material

Quantum dots light‐emitting diodes (QLEDs) have attracted much interest owing to their compatibility with low‐cost inkjet printing technology and potential for use in large‐area full‐color pixelated display. However, it is challenging to fabricate high efficiency inkjet‐printed QLEDs because of the coffee ring effects and inferior resistance to solvents from the underlying polymer film during the inkjet printing process. In this study, a novel crosslinkable hole transport material, 4,4′‐bis(3‐vinyl‐9H‐carbazol‐9‐yl)‐1,1′‐biphenyl (CBP‐V) which is small‐molecule based, is synthesized and investigated for inkjet printing of QLEDs. The resulting CBP‐V film after thermal curing exhibits excellent solvent resistance properties without any initiators. An added advantage is that the crosslinked CBP‐V film has a sufficiently low highest occupied molecular orbital energy level (≈?6.2 eV), high film compactness, and high hole mobility, which can thus promote the hole injection into quantum dots (QDs) and improve the charge carrier balance within the QD emitting layers. A red QLED is successfully fabricated by inkjet printing a CBP‐V and QDs bilayer. Maximum external quantum efficiency of 11.6% is achieved, which is 92% of a reference spin‐coated QLED (12.6%). This is the first report of such high‐efficiency inkjet‐printed multilayer QLEDs and demonstrates a unique and effective approach to inkjet printing fabrication of high‐performance QLEDs.     

Design and development of novel linker for PbS quantum dots/TiO₂ mesoscopic solar cell

A novel bifunctional linker molecule, bis(4-mercaptophenyl)phosphinic acid, is designed to be used in a QDs solar cells. The linker anchors to TiO(2) mesoporous film through the phosphinic acid functional group and to the PbS QDs through the two thiol groups. The way of attachment of this new linker molecule in a photovoltaic PbS QDs/TiO(2) mesoporous device was studied by FTIR measurements. The photovoltaic performance of this new linker in a heterojunction PbS QDs solar cell show high V(oc) relative to QDs based solar cells, which will allow to receive high power conversion efficiency using this novel designed linker. This novel bifunctional linker molecule should pave the way for enhancing binding strength, and efficiency of QDs solar cells compared to the state-of-the-art linkers.     

Low‐Temperature Soft‐Cover Deposition of Uniform Large‐Scale Perovskite Films for High‐Performance Solar Cells

Large‐scale high‐quality perovskite thin films are crucial to produce high‐performance perovskite solar cells. However, for perovskite films fabricated by solvent‐rich processes, film uniformity can be prevented by convection during thermal evaporation of the solvent. Here, a scalable low‐temperature soft‐cover deposition (LT‐SCD) method is presented, where the thermal convection‐induced defects in perovskite films are eliminated through a strategy of surface tension relaxation. Compact, homogeneous, and convection‐induced‐defects‐free perovskite films are obtained on an area of 12 cm², which enables a power conversion efficiency (PCE) of 15.5% on a solar cell with an area of 5 cm². This is the highest efficiency at this large cell area. A PCE of 15.3% is also obtained on a flexible perovskite solar cell deposited on the polyethylene terephthalate substrate owing to the advantage of presented low‐temperature processing. Hence, the present LT‐SCD technology provides a new non‐spin‐coating route to the deposition of large‐area uniform perovskite films for both rigid and flexible perovskite devices.     

Matching Charge Extraction Contact for Infrared PbS Colloidal Quantum Dot Solar Cells

Infrared solar cells (IRSCs) can supplement silicon or perovskite SCs to broaden the utilization of the solar spectrum. As an ideal infrared photovoltaic material, PbS colloidal quantum dots (CQDs) with tunable bandgaps can make good use of solar energy, especially the infrared region. However, as the QD size increases, the energy level shrinking and surface facet evolution makes us reconsider the matching charge extraction contacts and the QD passivation strategy. Herein, different to the traditional sol-gel ZnO layer, energy-level aligned ZnO thin film from a magnetron sputtering method is adopted for electron extraction. In addition, a modified hybrid ligand recipe is developed for the facet passivation of large size QDs. As a result, the champion IRSC delivers an open circuit voltage of 0.49 V and a power conversion efficiency (PCE) of 10.47% under AM1.5 full-spectrum illumination, and the certified PCE is over 10%. Especially the 1100 nm filtered efficiency achieves 1.23%. The obtained devices also show high storage stability. The present matched electron extraction and QD passivation strategies are expected to highly booster the IR conversion yield and promote the fast development of new conception QD optoelectronics.     

In Situ Passivation for Efficient PbS Quantum Dot Solar Cells by Precursor Engineering

Current efforts on lead sulfide quantum dot (PbS QD) solar cells are mostly paid to the device architecture engineering and postsynthetic surface modification, while very rare work regarding the optimization of PbS synthesis is reported. Here, PbS QDs are successfully synthesized using PbO and PbAc₂ · 3H₂O as the lead sources. QD solar cells based on PbAc‐PbS have demonstrated a high power conversion efficiency (PCE) of 10.82% (and independently certificated values of 10.62%), which is significantly higher than the PCE of 9.39% for PbO‐PbS QD based ones. For the first time, systematic investigations are carried out on the effect of lead precursor engineering on the device performance. It is revealed that acetate can act as an efficient capping ligands together with oleic acid, providing better surface coverage and replace some of the harmful hydroxyl (OH) ligands during the synthesis. Then the acetate on the surface can be exchanged by iodide and lead to desired passivation. This work demonstrates that the precursor engineering has great potential in performance improvement. It is also pointed out that the initial synthesis is an often neglected but critical stage and has abundant room for optimization to further improve the quality of the resultant QDs, leading to breakthrough efficiency.     

Room‐Temperature Triple‐Ligand Surface Engineering Synergistically Boosts Ink Stability,Recombination Dynamics,and Charge Injection toward EQE‐11.6% Perovskite QLEDs

Developing low‐cost and high‐quality quantum dots (QDs) or nanocrystals (NCs) and their corresponding efficient light‐emitting diodes (LEDs) is crucial for the next‐generation ultra‐high‐definition flexible displays. Here, there is a report on a room‐temperature triple‐ligand surface engineering strategy to play the synergistic role of short ligands of tetraoctylammonium bromide (TOAB), didodecyldimethylammonium bromide (DDAB), and octanoic acid (OTAc) toward “ideal” perovskite QDs with a high photoluminescence quantum yield (PLQY) of >90%, unity radiative decay in its intrinsic channel, stable ink characteristics, and effective charge injection and transportation in QD films, resulting in the highly efficient QD‐based LEDs (QLEDs). Furthermore, the QD films with less nonradiative recombination centers exhibit improved PL properties with a PLQY of 61% through dopant engineering in A‐site. The robustness of such properties is demonstrated by the fabrication of green electroluminescent LEDs based on CsPbBr₃ QDs with the peak external quantum efficiency (EQE) of 11.6%, and the corresponding peak internal quantum efficiency (IQE) and power efficiency are 52.2% and 44.65 lm W^?1, respectively, which are the most‐efficient perovskite QLEDs with colloidal CsPbBr₃ QDs as emitters up to now. These results demonstrate that the as‐obtained QD inks have a wide range application in future high‐definition QD displays and high‐quality lightings.     

Crystalline Silicon Thin‐Film Solar Cells on Silicon Nitride Ceramic Substrates

Photovoltaics—the generation of electricity from sunlight—is a technically challenging but environmentally benign technology to generate electricity with a large economical potential. However, the major hurdle for its widespread usage is its present high cost. Various thin‐film solar cell technologies are investigated to bring down the total cost to an economic value. One of them, the crystalline silicon thin‐film (CSiTF) solar cell combines the advantages of conventional wafer‐based silicon solar cells such as high efficiency and non‐toxicity with the benefits of thin‐film technologies such as serial interconnection and large area deposition. This paper reports for the first time the preparation of CSiTF solar cells on specially developed Si₃N₄ ceramic substrates. Three different types of Si₃N₄ ceramic wafers were single‐sided coated with 10μm of microcrystalline silicon, which was recrystallized by a zone melting step and subsequently thickened to approx. 30 μm. Optical analysis of the layer surface and cross sections was done to determine the crystallographic properties of the silicon layers, as well as mass spectroscopy to measure the concentration of transition metal impurities. A one‐side contacted solar cell process was applied on non‐conducting Si₃N₄ substrates. The best 1 cm² cells achieved an efficiency of 8.0 % with an excellent fill factor of 74 % and an open circuit voltage of 554 mV. The solar cell characterization was complemented by measurements of dark current–voltage characteristics, spectrally resolved light beam induced current mapping, and external quantum efficiency.     

Enhanced Open‐Circuit Voltage in Colloidal Quantum Dot Photovoltaics via Reactivity‐Controlled Solution‐Phase Ligand Exchange

The energy disorder that arises from colloidal quantum dot (CQD) polydispersity limits the open‐circuit voltage (V_OC) and efficiency of CQD photovoltaics. This energy broadening is significantly deteriorated today during CQD ligand exchange and film assembly. Here, a new solution‐phase ligand exchange that, via judicious incorporation of reactivity‐engineered additives, provides improved monodispersity in final CQD films is reported. It has been found that increasing the concentration of the less reactive species prevents CQD fusion and etching. As a result, CQD solar cells with a V_OC of 0.7 V (vs 0.61 V for the control) for CQD films with exciton peak at 1.28 eV and a power conversion efficiency of 10.9% (vs 10.1% for the control) is achieved.     

Lead Selenide (PbSe) Colloidal Quantum Dot Solar Cells with >10% Efficiency

Low‐cost solution‐processed lead chalcogenide colloidal quantum dots (CQDs) have garnered great attention in photovoltaic (PV) applications. In particular, lead selenide (PbSe) CQDs are regarded as attractive active absorbers in solar cells due to their high multiple‐exciton generation and large exciton Bohr radius. However, their low air stability and occurrence of traps/defects during film formation restrict their further development. Air‐stable PbSe CQDs are first synthesized through a cation exchange technique, followed by a solution‐phase ligand exchange approach, and finally absorber films are prepared using a one‐step spin‐coating method. The best PV device fabricated using PbSe CQD inks exhibits a reproducible power conversion efficiency of 10.68%, 16% higher than the previous efficiency record (9.2%). Moreover, the device displays remarkably 40‐day storage and 8 h illuminating stability. This novel strategy could provide an alternative route toward the use of PbSe CQDs in low‐cost and high‐performance infrared optoelectronic devices, such as infrared photodetectors and multijunction solar cells.     

Continuous and Controllable Liquid Transfer Guided by a Fibrous Liquid Bridge: Toward High‐Performance QLEDs

Solution processing is widely used for preparing quantum dot (QD) films for fabricating QD light‐emitting diode display (QLED) devices. However, current approaches suffer from either the coffee‐ring effect or a large amount of wasted solution, leading to low performance and high cost. Here, a facile approach guided by a fibrous liquid bridge is developed for the continuous and controllable transfer of QD solution into ultrasmooth films by using a taut fiber with its two ends placed into capillary tubes. Guided along the fiber, a liquid bridge is formed between the horizontal fiber and the substrate, with a large mass of liquid steadily being held within the vertically placed tubes. Directionally moving the liquid bridge generates a high‐quality QD film on the substrate. Particularly, the liquid consumption is quantitative, namely, in proportion to the area of the as‐prepared film. Moreover, multilayered ultrasmooth red/green/blue QD films are prepared by multiple transfers of liquid onto the same targeted area in sequence. The as‐prepared white QLEDs show a rather high performance with a maximum luminance of 57 190 cd m^?2 and a maximum current efficiency of 15.868 cd A^?1. It is envisioned that this strategy offers new perspectives for the low‐cost fabrication of high‐performance QLED devices.