Ultrathin Two‐Dimensional Multinary Layered Metal Chalcogenide Nanomaterials

Ultrathin two‐dimensional (2D) layered transition metal dichalcogenides (TMDs), such as MoS₂, WS₂, TiS₂, TaS₂, ReS₂, MoSe₂ and WSe₂, have attracted considerable attention over the past six years owing to their unique properties and great potential in a wide range of applications. Aiming to achieve tunable properties and optimal application performances, great effort is devoted to the exploration of 2D multinary layered metal chalcogenide nanomaterials, which include ternary metal chalcogenides with well‐defined crystal structures, alloyed TMDs, heteroatom‐doped TMDs and 2D metal chalcogenide heteronanostructures. These novel 2D multinary layered metal chalcogenide nanomaterials exhibit some unique properties compared to 2D binary TMD counterparts, thus holding great promise in various potential applications including electronics/optoelectronics, catalysis, sensors, biomedicine, and energy storage and conversion with enhanced performances. This article focuses on the state‐of‐art progress on the preparation, characterization and applications of ultrathin 2D multinary layered metal chalcogenide nanomaterials.     

2D Metal Chalcogenides Incorporated into Carbon and their Assembly for Energy Storage Applications

2D metal chalcogenides have become a popular focus in the energy storage field because of their unique properties caused by their single‐atom thicknesses. However, their high surface energy and van der Waals attraction easily cause serious stacking and restacking, leading to the generation of more inaccessible active sites with rapid capacity fading. The hybridization of 2D metal chalcogenides with highly conductive materials, particularly, incorporating ultrasmall and few‐layered metal chalcogenides into carbon frameworks, can not only maximize the exposure of active sites but also effectively avoid their stacking and aggregation during the electrochemical reaction process. Therefore, a satisfactory specific capacity will be achieved with a long cycle life. In this Concept, the representative progress on such intriguing nanohybrids and their applications in energy storage devices are mainly summarized. Finally, an outlook of the future development and challenges of such nanohybrids for achieving an excellent energy storage capability is also provided.     

Chemical Vapor Transport Reactions for Synthesizing Layered Materials and Their 2D Counterparts

2D materials, namely thin layers of layered materials, are attracting much attention because of their unique electronic, optical, thermal, and catalytic properties for wide applications. To advance both the fundamental studies and further practical applications, the scalable and controlled synthesis of large‐sized 2D materials is desired, while there still lacks ideal approaches. Alternatively, the chemical vapor transport reaction is an old but powerful technique, and is recently adopted for synthesizing 2D materials, producing bulk crystals of layered materials or corresponding 2D films. Herein, recent advancements in synthesizing both bulk layered and 2D materials by chemical vapor transport reactions are summarized. Beginning with a brief introduction of the fundamentals of chemical vapor transport reactions, chemical vapor transport–based syntheses of bulk layered and 2D materials, mainly exampled by transition metal dichalcogenides and black phosphorus, are reviewed. Particular attention is paid to important factors that can influence the reactions and the growth mechanisms of black phosphorus. Finally, perspectives about the chemical vapor transport–based synthesis of 2D materials are discussed, intending to redraw attentions on chemical vapor transport reactions.     

One‐Step Solution Phase Growth of Transition Metal Dichalcogenide Thin Films Directly on Solid Substrates

Ultrathin transition metal dichalcogenides (TMDs) have exotic electronic properties. With success in easy synthesis of high quality TMD thin films, the potential applications will become more viable in electronics, optics, energy storage, and catalysis. Synthesis of TMD thin films has been mostly performed in vacuum or by thermolysis. So far, there is no solution phase synthesis to produce large‐area thin films directly on target substrates. Here, this paper reports a one‐step quick synthesis (within 45–90 s) of TMD thin films (MoS₂, WS₂, MoSe₂, WSe₂, etc.) on solid substrates by using microwave irradiation on a precursor‐containing electrolyte solution. The numbers of the quintuple layers of the TMD thin films are precisely controllable by varying the precursor's concentration in the electrolyte solution. A photodetector made of MoS₂ thin film comprising of small size grains shows near‐IR absorption, supported by the first principle calculation, exhibits a high photoresponsivity (>300 mA W^?1) and a fast response (124 µs). This study paves a robust way for the synthesis of various TMD thin films in solution phases.     

Controllable Colloidal Synthesis of Tin(II) Chalcogenide Nanocrystals and Their Solution‐Processed Flexible Thermoelectric Thin Films

A systematic colloidal synthesis approach to prepare tin(II, IV) chalcogenide nanocrystals with controllable valence and morphology is reported, and the preparation of solution‐processed nanostructured thermoelectric thin films from them is then demonstrated. Triangular SnS nanoplates with a recently‐reported π‐cubic structure, SnSe with various shapes (nanostars and both rectangular and hexagonal nanoplates), SnTe nanorods, and previously reported Sn(IV) chalcogenides, are obtained using different combinations of solvents and ligands with an Sn⁴⁺ precursor. These unique nanostructures and the lattice defects associated with their Sn‐rich composition allow the production of flexible thin films with competitive thermoelectric performance, exhibiting room temperature Seebeck coefficients of 115, 81, and 153 μV K^?1 for SnS, SnSe, and SnTe films, respectively. Interestingly, a p‐type to n‐type transition is observed in SnS and SnSe due to partial anion loss during post‐synthesis annealing at 500 °C. A maximum figure of merit (ZT) value of 0.183 is achieved for an SnTe thin film at 500 K, exceeding ZT values from previous reports on SnTe at this temperature. Thus, a general strategy to prepare tin(II) chalcogenide nanocrystals is provided, and their potential for use in high‐performance flexible thin film thermoelectric generators is demonstrated.     

Heterostructures Based on 2D Materials: A Versatile Platform for Efficient Catalysis

The unique structural and electronic properties of 2D materials, including the metal and metal‐free ones, have prompted intense exploration in the search for new catalysts. The construction of different heterostructures based on 2D materials offers great opportunities for boosting the catalytic activity in electo(photo)chemical reactions. Particularly, the merits resulting from the synergism of the constituent components and the fascinating properties at the interface are tremendously interesting. This scenario has now become the state‐of‐the‐art point in the development of active catalysts for assisting energy conversion reactions including water splitting and CO₂ reduction. Here, starting from the theoretical background of the fundamental concepts, the progressive developments in the design and applications of heterostructures based on 2D materials are traced. Furthermore, a personal perspective on the exploration of 2D heterostructures for further potential application in catalysis is offered.     

Synthesis of Large‐Area InSe Monolayers by Chemical Vapor Deposition

Recently, 2D materials of indium selenide (InSe) layers have attracted much attention from the scientific community due to their high mobility transport and fascinating physical properties. To date, reports on the synthesis of high‐quality and scalable InSe atomic films are limited. Here, a synthesis of InSe atomic layers by vapor phase selenization of In₂O₃ in a chemical vapor deposition (CVD) system, resulting in large‐area monolayer flakes or thin films, is reported. The atomic films are continuous and uniform over a large area of 1 × 1 cm², comprising of primarily InSe monolayers. Spectroscopic and microscopic measurements reveal the highly crystalline nature of the synthesized InSe monolayers. The ion‐gel‐gated field‐effect transistors based on CVD InSe monolayers exhibit n‐type channel behaviors, where the field effect electron mobility values can be up to ≈30 cm² V^?1 s^?1 along with an on/off current ratio, of >10⁴ at room temperature. In addition, the graphene can serve as a protection layer to prevent the oxidation between InSe and the ambient environment. Meanwhile, the synthesized InSe films can be transferred to arbitrary substrates, enabling the possibility of reassembly of various 2D materials into vertically stacked heterostructures, prompting research efforts to probe its characteristics and applications.     

2D Metal Chalcogenides for IR Photodetection

Infrared (IR) photodetectors are finding diverse applications in imaging, information communication, military, etc. 2D metal chalcogenides (2DMCs) have attracted increasing interest in view of their unique structures and extraordinary physical properties. They have demonstrated outstanding IR detection performance including high responsivity and detectivity, high on/off ratio, fast response rate, stable room temperature operability, and good mechanical flexibility, which has opened up a new prospect in next‐generation IR photodetectors. This Review presents a comprehensive summary of recent progress in advanced IR photodetectors based on 2DMCs. The rationale of the photodetectors containing photocurrent generation mechanisms and performance parameters are briefly introduced. The device performances of 2DMCs‐based IR photodetectors are also systematically summarized, and some representative achievements are highlighted as well. Finally, conclusions and outlooks are delivered as a guideline for this thriving field.     

Thermodynamically Stable Synthesis of Large‐Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n–n Heterojunction Devices

Transition metal dichalcogenide (TMDC) monolayers are considered to be potential materials for atomically thin electronics due to their unique electronic and optical properties. However, large‐area and uniform growth of TMDC monolayers with large grain sizes is still a considerable challenge. This report presents a simple but effective approach for large‐scale and highly crystalline molybdenum disulfide monolayers using a solution‐processed precursor deposition. The low supersaturation level, triggered by the evaporation of an extremely thin precursor layer, reduces the nucleation density dramatically under a thermodynamically stable environment, yielding uniform and clean monolayer films and large crystal sizes up to 500 µm. As a result, the photoluminescence exhibits only a small full‐width‐half‐maximum of 48 meV, comparable to that of exfoliated and suspended monolayer crystals. It is confirmed that this growth procedure can be extended to the synthesis of other TMDC monolayers, and robust MoS₂/WS₂ heterojunction devices are easily prepared using this synthetic procedure due to the large‐sized crystals. The heterojunction device shows a fast response time (≈45 ms) and a significantly high photoresponsivity (≈40 AW^?1) because of the built‐in potential and the majority‐carrier transport at the n–n junction. These findings indicate an efficient pathway for the fabrication of high‐performance 2D optoelectronic devices.     

Carbon and Nitrogen Based Nanosheets as Fluorescent Probes with Tunable Emission

2D carbon and nitrogen based semiconductors (CN) have attracted widespread attention for their possible use as low‐cost and environmentally friendly materials for various applications. However, their limited solution‐dispersibility and the difficulty in preparing exfoliated sheets with tunable photophysical properties restrain their exploitation in imaging‐related applications. Here, the synthesis of carbon and nitrogen organic scaffolds with highly tunable optical properties, excellent dispersion in water and DMSO, and good bioimaging properties is reported. Tailored photophysical and chemical properties are acquired by the synthesis of new starting monomers containing different substituent chemical groups with varying electronic properties. Upon monomer condensation at moderate temperature, 350 °C, the starting chemical groups are fully preserved in the final CN. The low condensation temperature and the effective molecular‐level modification of the CN scaffold lead to well‐dispersed photoluminescent CN thin sheets with a wide range of emission wavelengths. The good bioimaging properties and the tunable fluorescence properties are exemplified by in situ visualization of giant unilamellar vesicles in a buffered aqueous solution as a model system. This approach opens the possibility for the design of tailor‐made CN materials with tunable photophysical and chemical properties toward their exploitation in various fields, such as photocatalysis, bioimaging, and sensing.     

Changes of Structure and Bonding with Thickness in Chalcogenide Thin Films

Extreme miniaturization is known to be detrimental for certain properties, such as ferroelectricity in perovskite oxide films below a critical thickness. Remarkably, few-layer crystalline films of monochalcogenides display robust in-plane ferroelectricity with potential applications in nanoelectronics. These applications critically depend on the electronic properties and the nature of bonding in the 2D limit. A fundamental open question is thus to what extent bulk properties persist in thin films. Here, this question is addressed by a first-principles study of the structural, electronic, and ferroelectric properties of selected monochalcogenides (GeSe, GeTe, SnSe, and SnTe) as a function of film thickness up to 18 bilayers. While in selenides a few bilayers are sufficient to recover the bulk behavior, the Te-based compounds deviate strongly from the bulk, irrespective of the slab thickness. These results are explained in terms of depolarizing fields in Te-based slabs and the different nature of the chemical bond in selenides and tellurides. It is shown that GeTe and SnTe slabs inherit metavalent bonding of the bulk phase, despite structural and electronic properties being strongly modified in thin films. This understanding of the nature of bonding in few-layers structures offers a powerful tool to tune materials properties for applications in information technology.     

Many‐Body Complexes in 2D Semiconductors

2D semiconductors such as transition metal dichalcogenides (TMDs) and black phosphorus (BP) are currently attracting great attention due to their intrinsic bandgaps and strong excitonic emissions, making them potential candidates for novel optoelectronic applications. Optoelectronic devices fabricated from 2D semiconductors exhibit many‐body complexes (exciton, trion, biexciton, etc.) which determine the materials optical and electrical properties. Characterization and manipulation of these complexes have become a reality due to their enhanced binding energies as a direct result from reduced dielectric screening and enhanced Coulomb interactions in the 2D regime. Furthermore, the atomic thickness and extremely large surface‐to‐volume ratio of 2D semiconductors allow the possibility of modulating their inherent optical, electrical, and optoelectronic properties using a variety of different environmental stimuli. To fully realize the potential functionalities of these many‐body complexes in optoelectronics, a comprehensive understanding of their formation mechanism is essential. A topical and concise summary of the recent frontier research progress related to many‐body complexes in 2D semiconductors is provided here. Moreover, detailed discussions covering the aspects of fundamental theory, experimental investigations, modulation of properties, and optoelectronic applications are given. Lastly, personal insights into the current challenges and future outlook of many‐body complexes in 2D semiconducting materials are presented.     

Photonics and Optoelectronics of 2D Metal‐Halide Perovskites

In the growing list of 2D semiconductors as potential successors to silicon in future devices, metal‐halide perovskites have recently joined the family. Unlike other conversional 2D covalent semiconductors such as graphene, transition metal dichalcogenides, black phosphorus, etc., 2D perovskites are ionic materials, affording many distinct properties of their own, including high photoluminescence quantum efficiency, balanced large exciton binding energy and oscillator strength, and long carrier diffusion length. These unique properties make 2D perovskites potential candidates for optoelectronic and photonic devices such as solar cells, light‐emitting diodes, photodetectors, nanolasers, waveguides, modulators, and so on, which represent a relatively new but exciting and rapidly expanding area of research. In this Review, the recent advances in emerging 2D metal‐halide perovskites and their applications in the fields of optoelectronics and photonics are summarized and insights into the future direction of these fields are offered.     

Metal Chalcogenide Clusters on the Border between Molecules and Materials

The preparative and materials chemistry of high nuclearity transition metal chalcogenide nanoclusters has been in the focus of our research for many years. These polynuclear metal compounds possess rich photophysical properties and can be understood as intermediates between mononuclear complexes and binary bulk phases. Based on our previous results we discuss herein recent advances in three different areas of cluster research. In the field of copper selenide clusters we present the synthesis of monodisperse, nanostructured α‐Cu₂Se via the thermolysis of well‐defined cluster compounds as well as our approaches in the synthesis of functionalized clusters. In case of silver chalcogenides we established a strategy to synthesis cluster compounds containing several hundreds of silver atoms with the nanoclusters arranging in a closely packed crystal lattice. Finally the presented chalcogenide clusters of the group 12 metals (Zn, Cd, Hg) can be taken as model compounds for corresponding nanoparticles as even the smallest of frameworks display a clear structural relationship to the bulk materials.     

Epitaxial Growth of Honeycomb Monolayer CuSe with Dirac Nodal Line Fermions

2D transition metal chalcogenides have attracted tremendous attention due to their novel properties and potential applications. Although 2D transition metal dichalcogenides are easily fabricated due to their layer‐stacked bulk phase, 2D transition metal monochalcogenides are difficult to obtain. Recently, a single atomic layer transition metal monochalcogenide (CuSe) with an intrinsic pattern of nanoscale triangular holes is fabricated on Cu(111). The first‐principles calculations show that free‐standing monolayer CuSe with holes is not stable, while hole‐free CuSe is endowed with the Dirac nodal line fermion (DNLF), protected by mirror reflection symmetry. This very rare DNLF state is evidenced by topologically nontrivial edge states situated inside the spin–orbit coupling gaps. Motivated by the promising properties of hole‐free honeycomb CuSe, monolayer CuSe is fabricated on Cu(111) surfaces by molecular beam epitaxy and confirmed success with high resolution scanning tunneling microscopy. The good agreement of angle resolved photoemission spectra with the calculated band structures of CuSe/Cu(111) demonstrates that the sample is monolayer CuSe with a honeycomb lattice. These results suggest that the honeycomb monolayer transition metal monochalcogenide can be a new platform to study 2D DNLFs.     

Overview of the synthesis of MXenes and other ultrathin 2D transition metal carbides and nitrides

In 2011, a new family of two dimensional (2D) carbides, carbonitrides and nitrides – labeled MXenes – was discovered. Since then the number of papers on these materials has increased exponentially for several reasons amongst them: their hydrophilic nature, excellent electronic conductivities and ease of synthesizing large quantities in water. This unique combination of properties and ease of processing has positioned them as enabling materials for a large, and quite varied, host of applications from energy storage to electromagnetic shielding, transparent conductive electrodes, electrocatalysis, to name a few. Since the initial synthesis of Ti₃C₂ in hydrofluoric acid, many more compositions were discovered, and different synthesis pathways were explored. Most of the work done so far has been conducted on top-down synthesis where a layered parent compound is etched and then exfoliated. Three bottom-up synthesis methods, chemical vapor deposition, a template method and plasma enhanced pulsed laser deposition have been reported. The latter methods enable the synthesis of not only high-quality ultrathin 2D transition metal carbide and nitride films, but also those that could not be synthesized by selective etching. This article reviews and summarizes the most important breakthroughs in the synthesis of MXenes and high-quality ultrathin 2D transition metal carbide and nitride films.     

2D–Organic Hybrid Heterostructures for Optoelectronic Applications

The unique properties of hybrid heterostructures have motivated the integration of two or more different types of nanomaterials into a single optoelectronic device structure. Despite the promising features of organic semiconductors, such as their acceptable optoelectronic properties, availability of low‐cost processes for their fabrication, and flexibility, further optimization of both material properties and device performances remains to be achieved. With the emergence of atomically thin 2D materials, they have been integrated with conventional organic semiconductors to form multidimensional heterostructures that overcome the present limitations and provide further opportunities in the field of optoelectronics. Herein, a comprehensive review of emerging 2D–organic heterostructures—from their synthesis and fabrication to their state‐of‐the‐art optoelectronic applications—is presented. Future challenges and opportunities associated with these heterostructures are highlighted.     

Phosphorene and Phosphorene‐Based Materials – Prospects for Future Applications

Phosphorene, a single‐ or few‐layered semiconductor material obtained from black phosphorus, has recently been introduced as a new member of the family of two‐dimensional (2D) layered materials. Since its discovery, phosphorene has attracted significant attention, and due to its unique properties, is a promising material for many applications including transistors, batteries and photovoltaics (PV). However, based on the current progress in phosphorene production, it is clear that a lot remains to be explored before this material can be used for these applications. After providing a comprehensive overview of recent advancements in phosphorene synthesis, advantages and challenges of the currently available methods for phosphorene production are discussed. An overview of the research progress in the use of phosphorene for a wide range of applications is presented, with a focus on enabling important roles that phosphorene would play in next‐generation PV cells. Roadmaps that have the potential to address some of the challenges in phosphorene research are examined because it is clear that the unprecedented chemical, physical and electronic properties of phosphorene and phosphorene‐based materials are suitable for various applications, including photovoltaics.     

Metal Thio‐ and Selenophosphates as Multifunctional van der Waals Layered Materials

Since the discovery of Dirac physics in graphene, research in 2D materials has exploded with the aim of finding new materials and harnessing their unique and tunable electronic and optical properties. The follow‐on work on 2D dielectrics and semiconductors has led to the emergence and development of hexagonal boron nitride, black phosphorus, and transition metal disulfides. However, the spectrum of good insulating materials is still very narrow. Likewise, 2D materials exhibiting correlated phenomena such as superconductivity, magnetism, and ferroelectricity have yet to be developed or discovered. These properties will significantly enrich the spectrum of functional 2D materials, particularly in the case of high phase‐transition temperatures. They will also advance a fascinating fundamental frontier of size and proximity effects on correlated ground states. Here, a broad family of layered metal thio(seleno)phosphate materials that are moderate‐ to wide‐bandgap semiconductors with incipient ionic conductivity and a host of ferroic properties are reviewed. It is argued that this material class has the potential to merge the sought‐after properties of complex oxides with electronic functions of 2D and quasi‐2D electronic materials, as well as to create new avenues for both applied and fundamental materials research in structural and magnetic correlations.     

Designer Shape Anisotropy on Transition‐Metal‐Dichalcogenide Nanosheets

MoS₂ and generally speaking, the wide family of transition‐metal dichalcogenides represents a solid nanotechnology platform on which to engineer a wealth of new and outperforming applications involving 2D materials. An even richer flexibility can be gained by extrinsically inducing an in‐plane shape anisotropy of the nanosheets. Here, the synthesis of anisotropic MoS₂ nanosheets is proposed as a prototypical example in this respect starting from a highly conformal chemical vapor deposition on prepatterend substrates and aiming at the more general purpose of tailoring anisotropy of 2D nanosheets by design. This is envisioned to be a suitable configuration for strain engineering as far as strain can be spatially redistributed in morphologically different regions. With a similar approach, both the optical and electronic properties of the 2D transition‐metal dichalcogenides can be tailored over macroscopic sample areas in a self‐organized fashion, thus paving the way for new applications in the field of optical metasurfaces, light harvesting, and catalysis.