Composition of alumina films grown on Si at low temperature with catalytic CVD

The X-ray photoelectron spectroscopy (XPS) measurements have been used to reveal the compositions of alumina (Al₂O₃) films formed on Si wafers using tri-methyl aluminium (TMA) and molecular oxygen (O₂) with catalytic chemical vapour deposition (Cat-CVD). The atomic ratio (O/Al) for Al₂O₃ samples formed at substrate temperature of 200-400 °C has been obtained to be 1.4 which is close to stoichiometry. The increase of growth rate at substrate temperatures below 200 °C and above 400 °C can be attributed to formation of aluminum oxides with non-stoichiometry and metallic aluminum incorporated in the films resulting from deficient oxygen. Angle resolved XPS measurements have revealed that the alumina/Si interface with no SiO₂ film has been obtained at substrate temperatures below 200 °C.     

Dry etching characteristics of HfAlO3 thin films in BCl3/Ar plasma using inductively coupled plasma system

In this study, we monitored the HfAlO₃ etch rate and selectivity to SiO₂ as a function of the etch parameters (gas mixing ratio, RF power, DC-bias voltage, and process pressure). A maximum etch rate of 52.6 nm/min was achieved in the 30% BCl₃/(BCl₃ + Ar) plasma. The etch selectivity of HfAlO₃ to SiO₂ reached 1.4. As the RF power and the DC-bias voltage increased, the etch rate of the HfAlO₃ thin film increased. As the process pressure decreased, the etch rate of the HfAlO₃ thin films increased. The chemical state of the etched surfaces was investigated by X-ray Photoelectron Spectroscopy (XPS). According to the results, the etching of HfAlO₃ thin films follows the ion-assisted chemical etching mechanism.     

Low temperature decomposition of large molecules of TMA using catalyzers with resistance to oxidation in catalytic CVD

In order to obtain catalyzers to decompose tri-methyl aluminium (TMA) to Al and CH₃ at catalyzer temperatures lower than 500 °C, decomposition experiments using Ni-Chrome, Kanthal, Inconel 600, Chromel and SUS-304 catalyzers exhibiting resistance to oxidation have been carried out. The experiments have revealed that TMA can be decomposed to Al and CH₃ above 200 °C using Chromel or SUS-304 catalyzer, and that the CH₃ does not decompose further below 500 °C. The experiments have also revealed that it requires relatively small activation energy for decomposing TMA to Al and CH₃ using Chromel or SUS-304 as the catalyzer.     

Effect of leakage current and dielectric constant on single and double layer oxides in MOS structure

MOS structure of Al/Al₂O₃/n-Si, Al/TiO₂/n-Si and Al/Al₂O₃/TiO₂/n-Si was obtained by deposition of Al₂O₃ and TiO₂ on silicon substrate by RF Magnetron Sputtering system. The total thickness of the oxide layer ~ 40 ± 5 nm in the MOS structure was kept constant. Samples were characterized by X-Ray diffraction (XRD), X-Ray photoelectron spectroscopy (XPS), Impedance analyzer and Current-voltage (J-V) characteristics. The variations in the dielectric constant and tan δ of the MOS capacitor in the frequency range of 1000Hz-1MHz were measured by impedance analyzer. The variation in dielectric constant of the Al/Al₂O₃/TiO₂/n-Si multilayer compared to single layer of Al/Al₂O₃/n-Si and Al/TiO₂/n-Si is due to high probability of defects, lattice mismatch and interface interactions. The steep rise of Tan δ values in the Al/Al₂O₃/TiO₂/n-Si structure is due to the resonance effect of both Al₂O₃ and TiO₂ layers. The leakage current mechanisms of MOS structures were extracted from Schottky coefficient and Poole-Frenkel coefficient. Theoretical values of Schottky coefficients (β_SC) and Poole-Frenkel coefficients (β_PF) for each sample were estimated using the real part of the dielectric constant. The experimental values were calculated from J-V characteristics and compared with theoretical values. The appropriate model has been proposed. It was found that Schottky and Poole-Frenkel mechanisms are applicable at low and high field respectively for all MOS structures. The combination of Al/Al₂O₃/TiO₂/n-Si is found to be a promising structure with high dielectric constant and low leakage current suitable for MOS devices.     

Effects of TiO2 doping on microstructure and properties of directed laser deposition alumina/aluminum titanate composites

ABSTRACT

Al₂O₃-based composite ceramics have excellent high temperature performance and are ideal materials for preparing hot end components. However, poor fracture toughness and thermal shock resistance limit its applications. Based on the excellent low thermal expansion characteristics and thermal shock resistance of Al₂TiO₅ ceramic, different composition ratios of Al₂O₃/Al₂TiO₅ composite ceramics were prepared by directed laser deposition (DLD) technology. Effects of TiO₂ doping amount on microstructure and properties of the composite ceramics were investigated. Results show that α-Al₂O₃ phase is discretely distributed in the continuous aluminum titanate matrix when TiO₂ doping amount between 2 and 30?mol%. With the increase of TiO₂ doping amount, content of Al₂O₃ gradually decreases and its morphology changes from cellular to dendritic. When TiO₂ doping amount reaches 43.9?mol%, the microstructure transforms into fine Al₂TiO₅/Al₆Ti₂O₁₃ eutectic structure. Property test results show that Al₂O₃/Al₂TiO₅ composite ceramics have good comprehensive mechanical properties when TiO₂ doping amount between 2 and 6?mol%.     

Processing and properties of zirconia-toughened alumina ceramics

Al₂O₃:ZrO₂ ceramics have been prepared from physically mixed pure oxide powders. The results indicate that careful processing of the starting powders and a two-stage sintering process can avoid expensive processing methods like hot pressing/hot isostatic pressing used for achieving high densification. The mechanical properties were measured and the resultant microstructure studied to explain the toughening behaviour of this material.     

High frequency characteristics of tin oxide thin films on Si

High frequency characteristics of tin oxide (SnO₂) thin films were studied. SnO₂ thin films have been successfully grown on n-type Si (111) substrates by using a spray deposition technique. The capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of the metal-oxide-semiconductor (Au/SnO₂/n-Si) Schottky diodes were investigated in the high frequency range from 300 kHz to 5 MHz. It has been shown that the interface state density, D_it, ranges from 2.44 × 10¹³ cm⁻² eV⁻¹ at 300 kHz to 0.57 × 10¹³ cm⁻² eV⁻¹ at 5 MHz and exponentially decreases with increasing frequency. The C-V and G/ω-V characteristics confirm that the interface state density and series resistance of the diode are important parameters that strongly influence the electrical parameters exhibited by the metal-oxide-semiconductor structure.     

Structural instability of Sn-doped In2O3 thin films during thermal annealing at low temperature

We report on observations of structural stability of Sn-doped In₂O₃ (ITO) thin films during thermal annealing at low temperature. The ITO thin films were deposited by radio-frequency magnetron sputtering at room temperature. Transmission electron microscopy analysis revealed that the as-deposited ITO thin films are nanocrystalline. After thermal annealing in a He atmosphere at 250 °C for 30 min, recrystallization, coalescence, and agglomeration of grains were observed. We further found that nanovoids formed in the annealed ITO thin films. The majority of the nanovoids are distributed along the locations of the original grain boundaries. These nanovoids divide the agglomerated larger grains into small coherent domains.     

Luminescence properties of Ce-Dy codoped aluminium oxide films

Photoluminescence properties of CeCl₃ and DyCl₃ codoped aluminium oxide films deposited by the ultrasonic spray pyrolysis technique were characterized by excitation, emission and decay time spectroscopy. When excited by ultraviolet radiation the films emit a combination of blue and yellow wavelengths through an efficient energy transfer from Ce³⁺ to Dy³⁺ ions (up to around 77%). From spectroscopic data it is inferred that such energy transfer is nonradiative in nature taking place between Ce³⁺ and Dy³⁺ clusters through a short-range interaction mechanism. In the Ce³⁺ doped single film the chromaticity coordinates are in the purplish blue region, whereas that in the cerium and dysprosium codoped films the coordinates move toward the white light emission region.     

Dielectric properties of sol-gel derived Ta2O5 thin films

The dielectric constant and the dielectric loss of tantalum pentoxide (Ta₂O₅) thin films, produced by sol-gel spin-coated process on Corning glass substrates, have been investigated in the frequency range of 20-10⁵ Hz and the temperature range of 183-403 K, using ohmic Al electrodes. The frequency and temperature dependence of relaxation time has also been determined. The capacitance and loss factor were found to decrease with increasing frequency and increase with increasing temperature. The activation energy values were evaluated and a good agreement between the activation energy values obtained from capacitance and dielectric loss factor measurements were observed.     

Chemical deposition of Al2O3 thin films on Si substrates

Uniform Al₂O₃ films were deposited on silicon substrates by the sol–gel process from stable coating solutions. The technological procedure includes spin coating deposition and investigating the influence of the annealing temperature on the dielectric properties. The layers were studied by Fourier transform infrared spectroscopy and Scanning Electron Spectroscopy. The electrical measurements have been carried out on metal–insulator–semiconductor (MIS) structures. The C–V curves show a negative fixed charge at the interface and density of the interface state, Dit, 3.7 × 10¹¹ eV^− 1cm^− 2 for annealing temperature at 750 °C.     

Effects of substrate temperature on dielectric and structural properties of Ti and Er co-doped HfO2 thin films

We report dielectric and structural properties of Ti and Er co-doped HfO₂ (HfTiErO_x) thin films at different substrate temperatures. The film at 400 °C substrate temperatures has the highest k value of 33, improved flat band voltage of −0.3 V, small hysteresis voltage and the significant interface-state density, which shows better dielectric properties for new high-k microstructure. XPS and XRD results reveal that Hf-Ti-Er-O bond may exist in addition with Hf-O, Hf-Er-O and Hf-Ti-O bonds, while the change in chemical structure and degradation of crystallization quality of HfO₂ thin films are directly related to Ti and Er co-doping.     

Electrical characterisation of HfYO MIM-structures deposited by ALD

By an ALD process with the solid precursors HfCl₄ and (CpCH₃)₃Y and the oxidant water Yttrium doped HfO₂ was deposited on TiN layer on highly doped silicon. The films were analysed by ellipsometry, XRR, RBS and XRD. For the electrical characterisation, capacitance and I-V measurement on MIM structure were used. By doping the HfO₂ with 6.2 at.% Yttrium and annealing the film at 500 °C in N₂ the k-value increased by 60% for a 9.5 nm thick film, the leakage current also increased. The deposited amorphous film crystallises at 450 °C into the cubic phase.     

Thermal treatment effects on interfacial layer formation between ZrO2 thin films and Si substrates

This paper describes the growth condition of stoichiometric ZrO₂ thin films on Si substrates and the interfacial structure of ZrO₂ and Si substrates. The ZrO₂ thin films were prepared by rf-magnetron sputtering from Zr target with mixed gas of O₂ and Ar at room temperature followed by post-annealing in O₂ ambient. The stoichiometric ZrO₂ thin films with smooth surface were grown at high oxygen partial pressure. The thick Zr-free SiO₂ layer was formed with both Zr silicide and Zr silicate at the interface between ZrO₂ and Si substrate during the post-annealing process due to rapid diffusion of oxygen atoms through the ZrO₂ thin films. After post annealing at 650-750 °C, the multi-interfacial layer shows small leakage current of less than 10⁻⁸ A/cm² that is corresponding to the high-temperature processed thermal oxidized SiO₂.     

Effect of Ethylene Flow Rate and CVD Process Time on Diameter Distribution of MWCNTs

To date, focus of the research activities in nanoscience was to control the chemical vapor deposition (CVD) growth of carbon nanotubes (CNTs) by changing the precursor pressure and process temperature. The effect of the precursor flow rate and process time on CNTs growth parameters has been overlooked in past studies and therefore is very little known. This study was focused on the optimization of the ethylene flow rate and CVD process time for CNTs growth over Fe₂O₃/Al₂O₃ catalyst in a fluidized bed chemical vapor deposition (FBCVD) reactor, operating at atmospheric pressure. Argon and hydrogen were considered as the carrier and supporting gases, respectively. Transmission electron microscope (TEM) and Scanning Electron Microscopy (SEM) were used to investigate the surface morphology, nanostructures, purity and yield of the grown CNTs. In-depth analysis revealed an increase in tube length, yield and the carbon concentration with ethylene flow rate in the range of 50–110 sccm. However, an inverse relationship between flow rate and tube diameter distribution was predicted in the given work. The most favorable results were obtained at an ethylene flow rate of 100 sccm and a CVD process time of 60 minutes. The dense and homogeneous growth of relatively pure nanotubes of increased tube length and narrow diameter distribution, in the range of 20–25 nm, was observed at optimized flow rate and process time.     

Pressure dependence and micro-hillock formation of ZnO thin films grown at low temperature by MOCVD

ZnO thin films were grown at a reduced growth temperature on a Si substrate by low-pressure metalorganic chemical vapor deposition. The effects of the reactor pressures and the formation of micro-hillocks on the characteristics of the film were investigated. The ZnO films grown at 210 °C showed mass-transport limited growth behavior and a faceted surface morphology. It was found that the effect of the micro-hillocks on the structural, optical, and electrical properties can be ignored. While the sample grown at 10 Torr showed transparent conductive oxide properties, the sample grown at 3 Torr showed suitable characteristics for use as an ultraviolet emitter.     

SiO2/TiO2 multilayer films grown on cotton fibers surface at low temperature by a novel two-step process

A novel two-step process was developed to synthesize and deposit SiO₂/TiO₂ multilayer films onto the cotton fibers. In the first step, SiO₂ particles on cotton fiber surface were synthesized via tetraethoxysilane hydrolysis in the presence of cotton fibers, in order to protect the fibers against photo-catalytic decomposition by TiO₂ nanoparticles. In the second step, the growth of TiO₂ nanoparticles into the modified cotton fiber surface was carried out via a sol-gel method at the temperature as low as 100 °C. The as-obtained SiO₂/TiO₂ multilayer films coated on cotton fibers were characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, atomic force microscopy and X-ray diffraction, respectively.     

Si versus Ge for future microelectronics

The quest for higher performance of scaled down technologies resulted in the use of high-mobility substrates and strain engineering approaches. The development of advanced processing modules, based on low temperature processing and deposited (MBE, ALD, epitaxially grown, etc.) gate stacks, has triggered the interest of exploring Ge for sub 32 nm technology nodes. A comparison between Si and Ge for future microelectronics has to take into account a variety of materials, processing and performance aspects. Here special attention will be given to passivation and gate stack formation in relation to device performance, including leakage current and reliability aspects. The potential of Ge-based device structures and the monolithic integration of Ge and III-V devices on silicon are highlighted.     

Conducting and topographic AFM analysis of Hf-doped and Al-doped Ta2O5 films

A conductive atomic force microscopy (C-AFM) has been used to study conductivity and electrical degradation of ultrathin (4 nm) Hf- and Al-doped Ta₂O₅ at the nanometer scale. The hardness testing has been also performed using the force measuring ability of the AFM. Since the size of the analyzed area is very small, features which are not visible by macroscopic tests are observed: extremely low leakage current (~ pA) up to significantly higher than the fields during standard current-voltage measurements; charge trapping/detrapping processes manifesting as current peaks at pre-breakdown voltages. Hf and Al addition improves the local conductivity of Ta₂O₅, provokes modification of the leakage current mechanism, and is effective in extending the potential of pure Ta₂O₅ as a high-k material at the nanoscale. The results point to a decisive role of the type of the dopant on the electrical and mechanical properties of the films and their local response to short term microwave irradiation. Hf-doped Ta₂O₅ exhibits excellent electrical stability and high hardness. Al doping provides more plastic films with large electrical inhomogeneities; the microwave treatment at room temperature is a way to improve these parameters to a level comparable to those of Hf-doped films.     

Ni-Al-O diffusion barrier layer for high-κ metal-oxide-semiconductor capacitor

Using amorphous Ni-Al-O (a-Ni-Al-O) thin film as the intermediate layer, poly-crystalline Er₂O₃ thin film was grown on a-Ni-Al-O/Si (p-type) via laser molecular beam epitaxy, forming the Er₂O₃/Ni-Al-O gate stack. It was found that the mean dielectric constant of the Er₂O₃/Ni-Al-O gate stack with an equivalent oxide thickness of 1.5 nm is about 17-23, the interfacial states density is about 3.16 × 10¹² cm⁻² and the stack gate leakage current density is as small as 4.1 × 10^− 6 A/cm². Furthermore, The insertion of the Ni-Al-O thin film between the Er₂O₃ gate dielectric and p-Si substrate prevents the oxygen from being out-diffused, which significantly improved the stability of gate stack, showing that the Er₂O₃/Ni-Al-O gate stack thin film could be used as an ideal gate oxide layer for the future Metal Oxide Semiconductor Field Effect Transistors.