CdS/CdTe太阳电池的背接触

磷硝酸腐蚀是一种适宜于工业化生产的背表面刻蚀工艺.文中采用磷硝酸腐蚀CdTe薄膜,并用溴甲醇腐蚀作为对照实验,研究了两种腐蚀对材料性质的影响.随后用真空蒸发法分别沉积了四种背接触层,提出了适宜于工业化生产的背接触技术,并从实验和理论上对两种背接触结构的CdTe太阳电池进行了分析.     

CdS/CdTe太阳电池的背接触

磷硝酸腐蚀是一种适宜于工业化生产的背表面刻蚀工艺.文中采用磷硝酸腐蚀CdTe薄膜,并用溴甲醇腐蚀作为对照实验,研究了两种腐蚀对材料性质的影响.随后用真空蒸发法分别沉积了四种背接触层,提出了适宜于工业化生产的背接触技术,并从实验和理论上对两种背接触结构的CdTe太阳电池进行了分析.     

背接触太阳电池的背面设计优化

利用quokka3仿真软件建立三维模型,对n型叉指背接触(IBC)单晶硅太阳电池的单元电池结构设计和栅线参数进行了仿真优化,并通过激光和丝网印刷进行了实验验证.实验结果表明,在不同IBC单元电池结构设计下,当p+发射区与n+背表面场区的宽度比值为4时,IBC太阳电池效率比宽度比值为2.3时的高0.11％.可通过减小单元...     

背接触太阳电池发射区设计及可靠性研究

利用Silvaco-TCAD仿真软件全面系统地分析了不同发射区表面浓度和结深对n型插指背接触(IBC)太阳电池短路电流、开路电压、填充因子及转换效率的影响.借鉴双极半导体器件抗二次击穿技术,详细分析了不同发射区结深、发射区边缘刻蚀技术和发射区边缘选择性掺杂技术对IBC电池热击穿特性的影响.结果表明:发射区表面浓度越大、结深越深,IBC电池效率越高.当发射区表面浓度为5× 1020 cm-3、结深为1 μm时,转换效率高达23.35％.同时,深结发射区也有助于改善IBC电池的热击穿特性.发射区边缘刻蚀结构不具有改善IBC电池热击穿特性的作用,而发射区边缘选择性掺杂结构可有效改善IBC电池的热击穿特性,从而提高IBC太阳电池组件的可靠性.     

MWT和EWT背接触太阳电池结构及其技术发展

主要介绍了两种高效前结背接触太阳电池即金属电极绕通(metal wrap through,MWT)太阳电池和发射极电极绕通(emitter wrap through,EWT)太阳电池的基本结构以及其关键技术构成。这两种太阳电池是目前较为高端的两种电池类型,单个电池效率能达到20%左右,组件效率能达到17%,其主要优点在于实现了共面拼装和减小了正面遮光损耗,可以应用于大规模生产。针对MWT和EWT两种电池的一些关键技术,总结了两种电池的技术共性,如激光打孔、制绒、扩散、钝化和表面电极制备等工艺,提出了其各项关键技术存在的问题并进行了发展展望。     

CuxS背接触层制备及在碲化镉薄膜太阳电池中应用研究

本文采用化学水浴法沉积CuxS薄膜,通过改变Cu元素比例研究其对碲化镉电池效率的影响。研究表明化学水浴法沉积的CuxS是非晶的,采用适当退火条件可以使其晶化,随着退火温度的提高,薄膜变得致密且结晶明显。CuxS薄膜厚度对电池性能有很大的影响,结果表明,随着CuxS薄膜厚度增加,电池性能先增加后减少。薄膜厚度为75nm时,CdS/CdTe电池性能最佳,达到了最高转化效率(η)为12.19%,填充因子(FF)为68.82%,开路电压(Voc)为820mV。     

聚光背结背接触太阳电池衬底电阻率和光强的优化研究

利用TCAD半导体器件仿真软件对中低倍聚光光伏系统中应用的N型插指背接触(Interdigitated Back Contact,IBC)单晶硅太阳电池的电学性能进行了仿真研究,全面系统地分析了不同衬底电阻率和光强对电池短路电流密度、开路电压、填充因子及转换效率的影响。结果表明:IBC太阳电池的电学性能受到衬底电阻率和光强的显著影响。当光强较小(0.1 W/cm~2)时,随着衬底电阻率的增大,IBC太阳电池转换效率随之降低,最优的衬底电阻率为0.5?·cm。当光强较高(0.5~5 W/cm~2)时,随着衬底电阻率的增大,IBC太阳电池转换效率随之增大,最优的衬底电阻率为3?·cm。当光强进一步增大(10~50 W/cm~2)时,随着衬底电阻率的增大,IBC太阳电池转换效率呈现出先增大后减小的变化特点,最优的衬底电阻率为2?·cm。     

前结背接触晶硅太阳电池发射区研究

利用Silvaco-TCAD仿真软件全面系统地分析了发射区表面浓度(cE)、结深(xj)及发射区覆盖比率(EF)对P型前结背接触晶硅太阳电池输出特性的影响。结果表明:基于常规低成本P型晶硅衬底(利用直拉法生长,电阻率为1.5?·cm,少子寿命为10μs)的前结背接触太阳电池,其上表面发射区表面浓度及结深对太阳电池的输出特性产生显著影响。上表面发射区表面浓度和结深越大,短波入射光外量子效率越小。当上表面发射区表面浓度为1×1019 cm–3,结深为0.2μm时,电池效率高达20.72%。侧面和下表面发射区表面浓度及结深对太阳电池输出特性的影响较小。但侧面和下表面发射区覆盖比率对太阳电池的输出特性产生显著影响。侧面和下表面发射区覆盖比率越大,太阳电池外量子效率和转换效率越高。     

晶硅衬底参数对背接触太阳电池性能的影响

利用Silvaco-TCAD半导体器件仿真软件对n型插指背接触(IBC)晶硅太阳电池衬底参数进行了优化,全面系统地分析了晶硅衬底厚度、电阻率、少子寿命对IBC太阳电池量子效率、短路电流、开路电压、转换效率的影响.结果表明:晶硅衬底少子寿命是影响IBC太阳电池性能的最主要因素.少子寿命越高,电池转换效率越高.当晶硅衬底电阻率为2Ω·cm,少子寿命为500 μs时,最优的衬底厚度范围为60～65μm,IBC太阳电池转换效率约为22.5％.利用高质量晶硅材料制备IBC太阳电池时,可降低对衬底厚度的要求.当晶硅衬底厚度为150 μm、少子寿命为500μs时,最优衬底电阻率为0.3 Ω·cm,IBC太阳电池转换效率约为23.3％.少子寿命越低,IBC太阳电池最优的衬底电阻率越大.     

高效单晶硅PERC局部背表面场及接触的优化

钝化发射极和背面电池(PERC)技术可有效提高电池效率,在常规p型电池的背面增加了钝化层,并形成了局部背表面场(LBSF)结构.介绍了PERC结构电池的工艺流程,分析了背场(BSF)的形成机制,主要研究了PERC的LBSF制备工艺及影响要素.通过采用激光消融后清洗方法改善了背表面形貌,平整的背表面形貌有利于BSF的形成.通过优化烧结条件,电池的填充因子得到改善.讨论了激光开槽图形对开路电压以及填充因子的影响.测试结果表明,PERC转换效率绝对值提升了0.9％,达到20.83％,填充因子达到80.7％.     

Buried contact solar cells with innovative rear localised contacts

A new rear contacting scheme using low‐temperature processes to form localised contacts without the use of photolithography has been developed. It uses randomly nucleated, aluminium‐induced, localised regions of solid phase epitaxial growth of p ⁺ silicon onto the rear surface of a wafer through a thick rear surface passivating oxide. This rear contacting technique has been applied on solar cells with front buried contacts and results have shown that a suitable ohmic contact to the rear can be formed through oxide as thick as 3000 Å and using only low temperature sintering below the eutectic temperature of silicon and aluminium. This low‐temperature sintering avoids the destruction of the interfacial oxide which has been shown to provide good surface passivation for the rear of the solar cells. Microscopic images indicate the possibility of forming p ⁺ rear contacts with aluminium‐induced crystallisation, but without requiring any additional deposition of silicon. The source of silicon for the latter appears to be from the reduction of the silicon dioxide by the aluminium. Copyright © 2004 John Wiley & Sons, Ltd.     

Study of Back Contacts for CdTe Solar Cells

ZnTe/ZnTe:Cu layer is used as a complex back contact.The parmeters of CdTe solar cells with and without the complex back contacts are compared.The effects of un-doped layer thickness,doped concentration and post-deposition annealing temperature of the complex layer on solar cells preformance are investigated.The results show that ZnTe/ZnTe:Cu layer can improve back contacts and largely increase the conversion efficiency of CdTe solar cells.Un-doped layer and post-deposition annealing of high temperature can increase open voltage.Using the complex back contact,a small CdTe cell with fill factor of 73.14% and conversion efficiency of 12.93% is obtained.     

CuSCN Modified Back Contacts for High Performance CZTSSe Solar Cells

Optimization of the back contact interface is crucial for improving the performance of Cu₂ZnSnS₄ (CZTS) thin film solar cells. In this paper, self-depleted CuSCN is deployed as an intermediate layer at the Mo/CZTS interface to improve the quality of the back contact. This CuSCN layer, obtained via aqueous solution processing, reduces the thickness of Mo(S,Se)₂ and eliminates multi-layer crystallization of the absorber by suppressing the undesirable reaction between Mo and Se during the selenization process. By regulating the selenium infiltration into the CZTS precursor films during the selenization process, highly crystalline, single-layer Cu₂ZnSn(S,Se)₄ (CZTSSe) absorber layers are realized. The single-layer CZTSSe absorber exhibits reduced carrier recombination, enhanced carrier density and increased work function. The improved back contact and absorber layer enables 11.1% power-conversion-efficiency to be achieved.     

Mitigating Plasmonic Absorption Losses at Rear Electrodes in High‐Efficiency Silicon Solar Cells Using Dopant‐Free Contact Stacks

Although charge‐carrier selectivity in conventional crystalline silicon (c‐Si) solar cells is usually realized by doping Si, the presence of dopants imposes inherent performance limitations due to parasitic absorption and carrier recombination. The development of alternative carrier‐selective contacts, using non‐Si electron and hole transport layers, has the potential to overcome such drawbacks and simultaneously reduce the cost and/or simplify the fabrication process of c‐Si solar cells. Nevertheless, devices relying on such non‐Si contacts with power conversion efficiencies (PCEs) that rival their classical counterparts are yet to be demonstrated. In this study, one key element is brought forward toward this demonstration by incorporating low‐pressure chemical vapor deposited ZnO as the electron transport layer in c‐Si solar cells. Placed at the rear of the device, it is found that rather thick (75 nm) ZnO film capped with LiF_x/Al simultaneously enables efficient electron selectivity and suppression of parasitic infrared absorption. Next, these electron‐selective contacts are integrated in c‐Si solar cells with MoO_x‐based hole‐collecting contacts at the device front to realize full‐area dopant‐free‐contact solar cells. In the proof‐of‐concept device, a PCE as high as 21.4% is demonstrated, which is a record for this novel device class and is at the level of conventional industrial solar cells.     

Novel Cu Nanowires/Graphene as the Back Contact for CdTe Solar Cells

Cu‐nanowire‐doped graphene (Cu NWs/graphene) is successfully incorporated as the back contact in thin‐film CdTe solar cells. 1D, single‐crystal Cu nanowires (NWs) are prepared by a hydrothermal method at 160 °C and 3D, highly crystalline graphene is obtained by ambient‐pressure CVD at 1000 °C. The Cu NWs/graphene back contact is obtained from fully mixing the Cu nanowires and graphene with poly(vinylidene fluoride) (PVDF) and N‐methyl pyrrolidinone (NMP), and then annealing at 185 °C for solidification. The back contact possesses a high electrical conductivity of 16.7 S cm^?1 and a carrier mobility of 16.2 cm² V^?1 s^?1. The efficiency of solar cells with Cu NWs/graphene achieved is up to 12.1%, higher than that of cells with traditional back contacts using Cu‐particle‐doped graphite (10.5%) or Cu thin films (9.1%). This indicates that the Cu NWs/graphene back contact improves the hole collection ability of CdTe cells due to the percolating network, with the super‐high aspect ratio of the Cu nanowires offering enormous electrical transport routes to connect the individual graphene sheets. The cells with Cu NWs/graphene also exhibit an excellent thermal stability, because they can supply an active Cu diffusion source to form an stable intermediate layer of CuTe between the CdTe layer and the back contact.     

Electrons and holes in solar cells with partial rear contacts

When the metal contact of a silicon solar cell is restricted to a fraction of the rear surface, the flow of electrons and holes towards that contact is constricted, which is beneficial for minority charge carriers but detrimental for majority carriers. It is possible to describe their 2D/3D transport and determine their concentration in the vertical and transversal dimensions of the solar cell by separately studying the central region near the contact and the peripheral region surrounding it. A virtue of such geometric approach is that it establishes a link between analytical models and computer simulations, providing both physical insight and sufficient accuracy to optimise partial rear contact devices. In this paper, we extend a previous version of the geometric model to solar cells having a full‐area, locally contacted dopant diffusion on the rear surface. The case for n‐type versus p‐type wafers is considered, point contacts are compared with line contacts, including the impact of the metal/semiconductor resistance and bulk recombination is evaluated. Copyright © 2013 John Wiley & Sons, Ltd.     

Recombination Through Different Types of Localized States in Organic Solar Cells

Recombination in bulk heterojunction solar cells is explored by observing the result of prolonged white light illumination, thermal annealing to high temperature, and chemical doping. Measurements of the photocurrent spectral response, the steady state photocurrent‐voltage characteristics, transient photoconductivity and the dark forward bias current on polymer:fullerene solar cells provide information about the density of states and the electronic properties. Illumination generates deep localized states in the interface gap, which act as recombination centers and also increase the diode ideality factor. Annealing induces both nanostructural and electronic changes. The coarsening of the domain structure reduces the probability that excitons reach the interfaces and also reduces the charge transfer absorption. At the same time annealing broadens the exponential band tails and increases the recombination rate. Doping introduces shallow states near the fullerene conduction band, which also act as recombination centers. The results show that recombination is through localized states of different character, depending on the circumstances.     

Carbon Nanotube Based Inverted Flexible Perovskite Solar Cells with All‐Inorganic Charge Contacts

Organolead halide perovskite solar cells (PSC) are arising as promising candidates for next‐generation renewable energy conversion devices. Currently, inverted PSCs typically employ expensive organic semiconductor as electron transport material and thermally deposited metal as cathode (such as Ag, Au, or Al), which are incompatible with their large‐scale production. Moreover, the use of metal cathode also limits the long‐term device stability under normal operation conditions. Herein, a novel inverted PSC employs a SnO₂‐coated carbon nanotube (SnO₂@CSCNT) film as cathode in both rigid and flexible substrates (substrate/NiO‐perovskite/Al₂O₃‐perovskite/SnO₂@CSCNT‐perovskite). Inverted PSCs with SnO₂@CSCNT cathode exhibit considerable enhancement in photovoltaic performance in comparison with the devices without SnO₂ coating owing to the significantly reduced charge recombination. As a result, a power conversion efficiency of 14.3% can be obtained on rigid substrates while the flexible ones achieve 10.5% efficiency. More importantly, SnO₂@CSCNT‐based inverted PSCs exhibit significantly improved stability compared to the standard inverted devices made with silver cathode, retaining over 88% of their original efficiencies after 550 h of full light soaking or thermal stress. The results indicate that SnO₂@CSCNT is a promising cathode material for long‐term device operation and pave the way toward realistic commercialization of flexible PSCs.     

Concurrent Top and Buried Surface Optimization for Flexible Perovskite Solar Cells with High Efficiency and Stability

Although much progress is made toward enhancing the efficiency of perovskite solar cells (PSCs), their operational reliability, particularly their mechanical stability, which is a crucial factor for flexible PSCs (f-PCSs), has not attracted sufficient attention. The defects in the perovskite layer, especially on the top and the buried surface of the perovskite layer, can induce perovskite fracture, highly limiting the performance of f-PSCs. Herein, a novel multifunctional organic salt, metformin hydrochloride, which can passivate cationic and anionic defects, is incorporated on both the top and buried surfaces of perovskite layer to suppress defects. As a result, a power conversion efficiency (PCE) of 24.40% for rigid PSCs and a PCE of 22.04% for f-PSCs are achieved. Simultaneously, the device can retain 90% and 80% of the initial efficiency after 1000 h of light illumination and 10 000 bending cycles, respectively, showing excellent operational stability. This study may provide a global way to design a passivation strategy and fabricate flexible perovskite solar cells with high efficiency and stability.