磁控溅射法制备NiZnCo铁氧体磁性薄膜的工艺研究

采用磁控溅射在硅晶基体上制备NiZnCo铁氧体磁性薄膜,研究了溅射功率对溅射(沉积)速率和微观形貌的影响规律:随着溅射功率由80W增大到150W,薄膜的沉积速率增大;薄膜却由整齐均匀分布的小颗粒状向片状结构变化,分布也不均匀,晶粒明显长大.由此确定最佳溅射功率为120 W,薄膜的微观形貌最理想,溅射(沉积)速率也很快.     

退火对低温射频磁控溅射Ba铁氧体薄膜结构及磁特性的影响

用ＲＦ磁控溅射法，在纯Ａｒ气中，硅基片不加热的情况下，制备了Ｂａ铁氧化薄膜，研究了退火温度对薄膜Ｃ轴垂直取向、结构及磁特性的影响，结果表明薄膜在７００℃氧气中退火可获得良好Ｃ轴垂直膜同的择优取向，该薄膜的饱和磁化强度和矫顽力分别为Ｍｓ＝２９６ｅｍｕ／ｃｍ＾３，Ｈｃ＝３０８７６１Ａ／ｍ。退火温度过低或过高，都不利于形成Ｃ轴垂直膜面的择优取向。     

退火对低温射频磁控溅射Ba铁氧体薄膜结构及磁特性的影响

用RF磁控溅射法，在纯Ar气中，硅基片不加热的情况下，制备了Ba铁氧体薄膜，研究了退火温度对薄膜c轴垂直取向、结构及磁特性的影响，结果表明薄膜在700℃氧气中退火可获得良好c轴垂直膜面的择优取向，该薄膜的饱和磁化强度和矫顽力分别为Ms=296emu／cm3，Hc=308761A／m。退火温度过低或过高，都不利于形成c轴垂直膜面的择优取向。     

磁控溅射法制备铁氧体薄膜的界面结合强度研究

利用磁控溅射法在单硅晶基底和玻璃基底上沉积铁氧体薄膜,采用AFM观察薄膜的微观形貌,采用划痕法测试薄膜的界面结合强度,测试结果表明:由于两种不同材质上沉积的薄膜粗糙度缘故,硅晶/铁氧体薄膜的临界载荷为19.7N,其划痕形貌为裂纹状扩展,玻璃/铁氧体薄膜的临界载荷为5.3N,其划痕形貌为剥落状。     

Ba铁氧体溅射薄膜的研究

研究了射频溅射制备Ｂａ铁氧体薄膜的成膜条件对晶化、晶体结构及磁性能的影响。我们的工作表明，为了使射频溅射Ｂａ铁氧体薄膜形成磁铅石结构的晶体，基板温度需高于６００℃，更高的基板温度可获得好的Ｃ轴垂直取向。非晶膜经热处理晶化所需温度要比直接溅射温度高得多。过大、过小的氧气分压不利于垂直膜的生成。使用挡板对最小溅射角限制以后，可在小的基板－靶间距情况下定得Ｃ轴垂直取向的薄膜。     

铁氧体表面无铅焊接薄膜的磁控溅射制备研究

随着环保要求的不断提高,特别是2006年欧盟新环保指令禁止电子产品含有铅、六价铬等重金属,铁氧体以往的电镀焊接薄膜将被明确禁止。本文采用磁控溅射技术在铁氧体表面制备无铅焊接复合薄膜,从理论和实验上研究分析了薄膜的结构、厚度与膜层的结合、焊接性能。研究发现：当膜层结构为Cr（150 nm）/Ni-Cu（460 nm）/Ag（200 nm）时,其平均抗拉强度可达6.15 MPa,焊接合格率大于98%,能经受450℃1、0 s的高温无铅焊锡熔蚀,性能远远好于电镀膜层,而且工艺无污染。     

溅射法制备Mn-Zn铁氧体薄膜的磁性与微结构

以交替真空溅射的方法使用成分分别为MnFe2O4与ZnFe2O4的双靶制备了成分变化的系列Mn1-xZnxFe2O4铁氧体薄膜,衬底为Si(100)。薄膜的成分通过控制不同靶的溅射时间来进行调整。沉积态的薄膜呈非晶结构,在真空炉中以适当的温度对薄膜进行退火之后能够得到多晶Mn-Zn铁氧体薄膜。组成成分为Mn0.5Zn0.5Fe2O4的薄膜呈现了相对最高的饱和磁化强度。同时还研究了制备条件对薄膜结构与磁性的影响,如溅射氧分压,退火真空度,退火温度及薄膜厚度等等。制备的薄膜相对于块状材料具有较高的矫顽力,进而讨论了应力对薄膜矫顽力的影响。     

退火温度对NiZn铁氧体薄膜性能的影响

采用射频磁控溅射法在Si(100)基片上制备了NiZn铁氧体薄膜,研究了退火温度对薄膜性能的影响.采用XRD分析仪分析了薄膜的相结构,原子力显微镜分析了薄膜的表面形貌,振动样品磁强计测量了薄膜的磁性能,结果表明,随着退火温度的升高,薄膜的结晶状态越好,晶粒尺寸越大,饱和磁感应强度越高,面内矫顽力越小.     

磁控溅射ITO薄膜的退火处理

采用直流磁控溅射方法在室温下玻璃基板上制备ITO(Indium tin oxide)薄膜,并在真空中不同温度(100℃~400℃)下退火处理.研究了退火对薄膜表面形貌、电光特性的影响.XRD测试发现薄膜在200℃退火后结晶,优选晶向为(222).随退火温度升高,方块电阻迅速下降,表面更加平整,薄膜在可见光范围平均透过率提高到85%.     

RF磁控溅射法制备ZnO薄膜的XRD分析

采用RF磁控溅射法，在玻璃村底上制备多晶ZnO薄膜，并对所制备的ZnO薄膜在空气气氛中进行了不同温度（350～600℃）的退火处理和600℃时N2气氛中的退火处理。利用X射线衍射分析了溅射参数如溅射功率、溅射氧分压、衬底温度以及退火处理对ZnO薄膜结晶性能的影响。结果表明，合适的衬底温度和退火处理能够提高ZnO薄膜的结晶质量。     

NiZnCo ferrite films by spin spray technique: morphology and magnetic properties

In the present study, highly crystallized spinel NiZnCo ferrite films were prepared by spin-spray ferrite plating, employing a reaction solution (containing Fe²⁺, Ni²⁺, Zn²⁺ and Co²⁺) and an oxidizing solution (KNO₂ + CH₃COOK). The solutions were sprayed independently onto a glass substrate maintained at 90 °C. Series of films with various Zn and Co compositions were prepared and their structural and magnetic properties were studied. The films had a columnar structure perpendicular to the substrate surface as confirmed by scanning electron microscopy (SEM) studies and showed no preferential orientation confirmed by X-ray diffraction (XRD). The films had a saturization magnetization M _s of 325–520 emu/cc and H _c of 5–12 Oe. At the optimized compositions, we obtained an initial permeability of around 190 (Ni_0.18Zn_0.6Co_0.02Fe_2.2O_4−δ ) and resonance frequency f _r of 300 MHz (Ni_0.16Zn_0.2Co_0.02Fe_2.62O_4−δ ). Such films with high permeability can be employed as trimming layers of inductors to increase the inductance and films with high resonance frequency can be used as electromagnetic noise suppressors at high frequency.     

Atomic scale microstructures of high-k HfSiO thin films fabricated by magnetron sputtering

High-k hafnium-silicate films were deposited by RF magnetron sputtering approach on silicon wafer. The microstructure has been investigated using the combination of transmission electron microscopy and atom probe tomography. It was evidenced that the elaborated HfSiO thin films subsequently annealed at 950 °C during 15 min leads to a complex phase separated nanostructure where silica, hafnia and silicon nanoclusters coexist. The formation of silicon nanoclusters in hafnia-based host was never reported before. The results demonstrate the capability of RF magnetron sputtering to pave the way for realization of nanomemory devices based on silicon clusters embedded in high-k matrix.     

High-index low-loss gallium phosphide thin films fabricated by radio frequency magnetron sputtering

High-index low-loss Gallium Phosphide thin films for visible light have been produced by radio frequency magnetron sputtering in an argon environment. This broadens the high refractive index limit of transparent optical materials using a physical deposition process. Energy-dispersive x-ray analysis and spectroscopic ellipsometry were used to characterize the stoichiometry and optical properties. A post-deposition high-temperature anneal was found to be necessary to restore the proper stoichiometric ratio and to reduce the absorption. The annealing conditions were optimized by an in-situ fiber-optic transmission spectrum monitoring system. The films exhibit a high refractive index (N = 3.23) and a low extinction coefficient (K = 0.029) at 633 nm. Such high index GaP films have broad applications in nanophotonic device designs.     

衬底温度对磁控溅射制备外延ZnO薄膜结构特性的影响

在不同的衬底温度下,采用磁控溅射方法在蓝宝石(0001)衬底上制备了外延生长的ZnO薄膜.采用原子力显微镜(AFM)、X射线衍射仪(XRD)、可见-紫外分光光度计系统研究了衬底温度对ZnO薄膜微观结构和光学特性的影响.AFM结果表明在不同村底温度制备的ZnO薄膜具有较为均匀的ZnO晶粒,且晶粒的尺寸随衬底温度的增加逐渐增大.XRD结果显示不同温度生长的ZnO薄膜均为外延生长,400℃生长的薄膜具有最好的结晶质量;光学透射谱显示在370nm附近均出现一个较陡的吸收边,表明制备的ZnO薄膜具有较高的质量,其光学能带隙随着衬底温度的增加而减小.     

Effect of sputtering pressure and post-annealing on hydrophilicity of TiO2 thin films deposited by reactive magnetron sputtering

A series of TiO₂ thin films was deposited onto glass substrates without intentional heating or biasing by magnetron sputtering of a titanium target using Ar/O₂ reactive mixtures over a broad range of total sputtering pressures from 0.12 Pa to 2.24 Pa. Each of the film types was deposited by the threshold poisoned mode at a specific given oxygen flow rate monitored in-situ by optical emission spectroscopy. Both the sputtering pressure and thermal annealing are the key factors for the TiO₂ films to yield fast-response superhydrophilicity with a water contact angle of 5°. The mechanism of superhydrophilicity for the TiO₂ films deposited by high-pressure sputtering will be discussed based on empirical studies of X-ray diffractometry, high-resolution scanning microscopy and atomic force spectroscopy.     

Effect of post-annealing on the optoelectronic properties of ZnO:Ga films prepared by pulsed direct current magnetron sputtering

In this study, highly conductive films of ZnO:Ga (GZO) were deposited by pulsed direct current magnetron sputtering to explore the effect of post-annealing on the structural, electrical and optical properties of the films. XRD patterns showed that after annealing, the intensity of c-axis preferentially oriented GZO (002) peak was apparently improved. GZO film annealing at 300 °C for 0.5 h exhibits lowest resistivity of 1.36 × 10^− 4 Ω cm. In addition, the film shows good optical transmittance of 88% with optical band gap, 3.82 eV. Carrier concentration and optical band gap both decreases with the annealing temperature. Besides, the near-infrared transmittance at 1400 nm is below 5%, while the reflectivity at 2400 nm is as high as 70%.