A VLSI demodulator for digital RF network applications: theory andresults

An all-digital demodulator/detector which is suitable for both analog FM and digital phase/frequency modulations is presented. The system uses complex sampling, which employs a single A/D (analog/digital) converter to sample the signal at an intermediate frequency (IF) and produce baseband in-phase (I) and quadrature phase (Q) signals, and a simplified technique for reducing the effect of the I/Q timing misalignment usually associated with this approach. The system also includes two detectors which operate simultaneously to provide noncoherent and differentially coherent detection, as well as automatic gain control (AGC) and automatic frequency control (AFC). The flexibility afforded by the two concurrent detectors in this all-digital system is shown to make it suitable for a wide range of applications. The theory behind the demodulator/detector system is described, and an implementation using a 1.25-μm bulk CMOS VLSI process is presented. Methods are shown for extending and improving the I/Q sampling misalignment correction technique, as well as for reducing the A/D sampling rate for a given IF frequency. Simulation and experimental results illustrate system performance for both analog and digital modulations     

I/Q channel reversal correcting properties of anSQPSK Costas loop with integrated symbol synchronization

An integrated-carrier loop/symbol synchronizer, using a digital Costas loop with matched arm filters to demodulate staggered quaternary phase-shift keyed (QPSK) signals, is analyzed. An expression is derived for the S curve, parameterized by bit synchronization error. This result suggests that the demodulator structure offers an inherent I/Q channel reversal correcting capability. Computer simulation results are presented that support this conclusion, and suggest that ambiguity resolution performance depends on the ratio of carrier and synchronization loop bandwidths     

Information rates for a discrete-time Gaussian channel withintersymbol interference and stationary inputs

Bounds are presented on I_i.i.d.-the achievable information rate for a discrete Gaussian Channel with intersymbol interference (ISI) present and i.i.d. channel input symbols governed by an arbitrary predetermined distribution p_x(x). The lower and upper bounds on I _i.i.d. and I are formulated. The bounds on I_i.i.d. are calculated for independent equiprobably binary channel symbols and for causal channels with ISI memory of degree one and two. The bounds on I_i.i.d. are compared to the approximated (by Monte Carlo methods) known value of I_i.i.d. and their tightness is considered. An application of the new lower bound on I_i.i.d. yields an improvement on previously reported lower bounds for the capacity of the continuous-time strictly bandlimited (or bandpass) Gaussian channel with either peak or simultaneously peak power and bandlimiting constraints imposed on the channel's input waveform     

Measured performance at 77 K of superconducting microstripresonators and filters

Results on three types of passive microwave devices fabricated and tested using epitaxial thin films of Tl₂CaBa₂Cu ₂O₈ grown on LaAlO₃ are reported. A microstrip ring resonator with unloaded Q of 2740 at 77 K and 33 GHz is described. A superconducting 4.6 GHz band-reject filter with unloaded Q greater than 15000 when operated at 77 K is reported. In addition, results on a multiple microstrip bandpass filter are presented     

Lower level relaxation of Nd:YAG

The results of studies on the relaxation rate of the terminal level of the 1.064 μm laser line of Nd:YAG are presented. It is shown that by measuring and modeling the time dependent gain of a Q-switched unidirectional ring oscillator, an upper limit of 11 ns may be placed on the relaxation rate of the ⁴I _11/2 level     

False lock in quadriphase receivers with unequal I- andQ-channel data rates

Results are presented concerning the noise-free false lock problem in quadriphase receivers with unequal I-channel and Q-channel data rates. It is shown that false lock may occur when the incoming carrier frequency and the loop VCO (voltage-controlled oscillator) frequency differ by an amount that is a linear combination of a quarter of I-channel and Q-channel data rates. General expressions for the false lock performance of quadriphase receivers are given for random as well as periodic data patterns. Specific closed-form expressions for the false lock margin are derived when the arm filters of the quadriphase receivers are single-pole Butterworth filters, and the format of the random data is NRZ (nonreturn-to-zero). Numerical evaluations of false lock margin as a function of the product of 3 dB arm-filter bandwidth and symbol duration are carried out for random data using various arm filters and for different periodic I-channel and Q-channel data patterns     

The theory of bandpass sampling

The sampling of bandpass signals is discussed with respect to band position, noise considerations, and parameter sensitivity. For first-order sampling, the acceptable and unacceptable sample rates are presented, with specific discussion of the practical rates which are nonminimum. It is shown that the minimum sampling rate is pathological in that any imperfection in the implementation will cause aliasing. In applying bandpass sampling to relocate signals to a base-band position, the signal-to-noise ratio is not preserved owing to the out-of-band noise being aliased. The degradation in signal-to-noise ratio is quantified in terms of the position of the bandpass signal. For the construction of a bandpass signal from second-order samples, the cost of implementing the interpolant (dynamic range and length) depends on Kohlenberg's sampling factor (1953) k, the relative delay between the uniform sampling streams. An elaboration on the disallowed discrete values of k shows that some allowed values are better than others for implementation     

A simple interferometric method for monitoring mode hopping intunable external-cavity semiconductor lasers

The mode-hopping events in a 1.3-μm grating-tuned external-cavity laser are analyzed on the basis of interferometric measurements. The average frequency of mode hopping for a 7.5-cm external-cavity laser is estimated and is expressed as f_c =2.7×10⁶×exp [-1.7/(I/I _th-1)] (hertz) for 0.07⩽(I/I_th -1)⩽0.8 (I=injection current and I_th =threshold current). The mode-hopping monitoring signal was negatively fed back to the laser using an automatic control circuit which maintained single-mode operation while the wavelength of the grating external-cavity laser was tuned     

A narrow bandpass microstrip filter for high-speed fiber opticsystems

Transmission systems employing passively retimed regenerators require a bandpass timing filter to extract the timing wave from the data stream. Typically, filters with Q exceeding 100 are necessary in long-haul fiber-optic systems. The fabrication of a microstrip filter with a loaded Q of over 500 and an insertion loss of 8 dB, is reported. The midband return loss in 4.8 dB. The filter is fabricated on a 1-in×1-in×1-in Ba₂Ti₉ O₂₀ substrate. This material has a dielectric constant of about 39 and can be formulated with temperature coefficients of resonant frequency from -2 to +6 p.p.m./°C. The fabricated device has a temperature coefficient of +2 p.p.m./°C. This combination of material properties facilitates high Q and small filter size and has the potential to compensate for temperature-induced electronic phase shifts between signal and clock recovery paths to the bit-decision circuit     

Yttrium oxide/silicon dioxide: a new dielectric structure forVLSI/ULSI circuits

Electrical characteristics of Al/yttrium oxide (~260 Å)/silicon dioxide (~40 Å)/Si and Al/yttrium oxide (~260 Å)/Si structures are described. The Al/Y₂O₃/SiO₂/Si (MYOS) and Al/Y₂ O₃/Si (MYS) capacitors show very well-behaved I-V characteristics with leakage current density <10^-10 A/cm² at 5 V. High-frequency C- V and quasistatic C-V characteristics show very little hysteresis for bias ramp rate ranging from 10 to 100 mV/s. The average interface charge density (Q_f+Q _it) is ~6×10¹¹/cm² and interface state density D_it is ~10¹¹ cm^-2-eV^-1 near the middle of the bandgap of silicon. The accumulation capacitance of this dielectric does not show an appreciable frequency dependence for frequencies varying from 10 kHz to 10 MHz. These electrical characteristics and dielectric constant of ~17-20 for yttrium oxide on SiO₂/Si make it a variable dielectric for DRAM storage capacitors and for decoupling capacitors for on-chip and off-chip applications     

A new method of determination of the I-Vcharacteristics of negative differential conductance devices

A method for mapping the complete I-V characteristic of a negative differential conductance (NDC) device has been investigated. This method employs the measurable positive differential conductance (PDC) portions of the DC I-V curve together with the measured conductances at a fixed DC bias voltage in the PDC region with different RF signal levels using a standard semiconductor analyzer. The NDC regime of the I-V curve is numerically constructed from the measured conductances at a fixed DC bias voltage in the PDC region with different signal levels using a large-signal nonlinear-circuit analysis     

Realization of IIR LDM digital filters

A method is presented of realizing an infinite impulse response (IIR) digital filter (DF) using linear delta modulation (LDM) as a simple analog/digital (A/D) converter. This method makes the realization of IIR digital filters much simpler than that of conventional ones because it does not require hardware multipliers or a pulse code modulation (PCM) A/D converter. Compared to the finite impulse response (FIR) LDMDF, this IIR LDMDF requires significantly less computation time     

A simple scheme for unity power-factor rectification for highfrequency AC buses

A simple scheme is proposed for offline unity power factor rectification for high-frequency AC buses (20 kHz). A bandpass filter of the series-resonant type, centered at the line frequency, is inserted between the line and the full-wave rectified load. The Q=Z ₀/R_L formed by the load and the characteristic impedance of the tank circuit determines the power factor, the boundary between continuous and discontinuous conduction modes, the peak stresses, and the transient response of the rectifier. It is shown that for Q>2/π the rectifier operates in continuous conduction mode and the output voltage is independent of the load. Also, it is shown that for Q>2 the line current is nearly sinusoidal with less than 5% third-harmonic distortion and the power factor is essentially unity. An increase in Q causes an increase in the peak voltages of the tank circuit and a slower transient response of the rectifier circuit. The DC, small-signal, and transient analyses of the rectifier circuit are carried out, and the results are in good agreement with simulation and experimental results     

Measurements and modeling of the n-channel MOSFET inversion layermobility and device characteristics in the temperature range 60-300 K

Discussed is the use of the high-frequency split C-V method to measure accurately the effective mobility of the n-channel MOS transistor as a function of temperature, bulk charge Q _b, and inversion layer charge Q_i. The experimental data for Q_b and Q_i were verified by comparison with the results of numerical simulation. The results of the measurements were used to develop the mobility model, which is accurate in the 60-300 K temperature range. The proposed mobility model incorporates Coulombic, lattice, and surface roughness scattering modes and generalizes the previous model, which was limited to low-temperature operation of the MOSFET. The deviation from the universal (for different back biases) μ(E_eff) dependence, which becomes more pronounced at low temperatures and low E_eff, is included in the model and can be associated with the Coulomb scattering mechanism. The proposed model is verified by comparison of experimental data and simulated MOSFET I-V characteristics for different temperatures     

Bounds and constructions of disjoint sets of distinct differencesets

An (I,J)-DDD is a set of I disjoint sets of distinct difference sets each having J elements. A number of constructions are given. Upper and lower bounds on the maximal element in a DDD (disjoint distinct difference) set are given. It is shown that regular DDD sets exist for I≳4J     

A NEW QUADRATURE SAMPLING APPROACH FOR ARBITRARY BANDPASS SIGNAL WITHIN BASEBAND SAMPLING RATE

A new quadrature sampling technique for arbitrary bandpass signal within baseband sampling rate is presented. The input bandpass signal whose carrier frequency lies in the A/D baseband sampling rate is first decimated by factor 2 and modulated by (- 1)n, and then is interpolated by a linear phase FIR all-pass filter, finally the modulated complex envelope of bandpass signal can be produced.     

基带采样率内任意带通信号的正交采样

提出了一种在基带采样率内对任意带通信号的正交采样技术。载频位于ADC(模/数转换器)基带采样率内的任意带通信号,经1/2抽取和(-1)n调制,再由全通线性多相滤波器内插后,得到其复包络的调制输出XI(n)和XQ(n)。     

SPICE macro model for the simulation of zener diodeI-V characteristics

The problems encountered when using the existing SPICE diode model to represent the I-V characteristics of a Zener diode in the reverse region are examined. A Zener diode macro model that has accurate I-V simulation characteristics and can be easily constructed using SPICE-provided primitives is presented. The static I-V characteristics and temperature response of the diode are reviewed. The performance of the model is discussed, and its main enhancements as compared to the SPICE model are identified     

A new method of determination of the I-Vcharacteristics of negative differential conductance devices bymicrowave reflection coefficient measurements

A technique to map out all of the I-V characteristics of negative differential conductance (NDC) devices is described. This method uses the DC measurable positive conductance portions of the I-V curve together with the measured microwave reflection coefficients at different RF signal levels and fixed DC bias voltage. The advantages of the method for high NDC devices are pointed out in a stability analysis. The complete I-V curve of a tunnel diode has been obtained with an accuracy within 5% in a proof-of-principal test of this method     

Light-to-input nonlinearities in an R-LED series network

The light-to-current (L-I) and light-to-voltage (L-V) differential nonlinearities in the simple network of a customary LED and an external resistor R in series are analyzed and calculated theoretically and compared with experimental data. Particular emphasis is placed on the influence of the log-arithmetic slope ν of the L-I characteristic and the bias current I upon the ratio of the corresponding nonlinearity parameters. It is thus deduced that, for a given optical power P, over superlinear portions of the L-I curve (ν>1) the L-I linearity is typically better than its corresponding L-V linearity. On the contrary, when the L-I dependence is sublinear (ν<1) the voltage driving scheme may ensure for the R-LED network, or the LED alone, a local L-V response much more linear than the L-I response, provided that appropriate (optimum) I and/or R values are chosen