Synthesis of zinc oxide nanostructures on graphene/glass substrate by electrochemical deposition: effects of current density and temperature

The electrochemical growth of zinc oxide (ZnO) nanostructures on graphene on glass using zinc nitrate hexahydrate was studied. The effects of current densities and temperatures on the morphological, structural, and optical properties of the ZnO structures were studied. Vertically aligned nanorods were obtained at a low temperature of 75°C, and the diameters increased with current density. Growth temperature seems to have a strong effect in generating well-defined hexagonal-shape nanorods with a smooth top edge surface. A film-like structure was observed for high current densities above -1.0 mA/cm² and temperatures above 80°C due to the coalescence between the neighboring nanorods with large diameter. The nanorods grown at a temperature of 75°C with a low current density of -0.1 mA/cm² exhibited the highest density of 1.45 × 10⁹ cm^-2. X-ray diffraction measurements revealed that the grown ZnO crystallites were highly oriented along the c-axis. The intensity ratio of the ultraviolet (UV) region emission to the visible region emission, I_UV/I_VIS, showed a decrement with the current densities for all grown samples. The samples grown at the current density below -0.5 mA/cm² showed high I_UV/I_VIS values closer to or higher than 1.0, suggesting their fewer structural defects. For all the ZnO/graphene structures, the high transmittance up to 65% was obtained at the light wavelength of 550 nm. Structural and optical properties of the grown ZnO structures seem to be effectively controlled by the current density rather than the growth temperature. ZnO nanorod/graphene hybrid structure on glass is expected to be a promising structure for solar cell which is a conceivable candidate to address the global need for an inexpensive alternative energy source.     

Fabrication and NO2 gas sensing performance of TeO2-core/CuO-shell heterostructure nanorod sensors

TeO₂-nanostructured sensors are seldom reported compared to other metal oxide semiconductor materials such as ZnO, In₂O₃, TiO₂, Ga₂O₃, etc. TeO₂/CuO core-shell nanorods were fabricated by thermal evaporation of Te powder followed by sputter deposition of CuO. Scanning electron microscopy and X-ray diffraction showed that each nanorod consisted of a single crystal TeO₂ core and a polycrystalline CuO shell with a thickness of approximately 7 nm. The TeO₂/CuO core-shell one-dimensional (1D) nanostructures exhibited a bamboo leaf-like morphology. The core-shell nanorods were 100 to 300 nm in diameter and up to 30 μm in length. The multiple networked TeO₂/CuO core-shell nanorod sensor showed responses of 142% to 425% to 0.5- to 10-ppm NO₂ at 150°C. These responses were stronger than or comparable to those of many other metal oxide nanostructures, suggesting that TeO₂ is also a promising sensor material. The responses of the core-shell nanorods were 1.2 to 2.1 times higher than those of pristine TeO₂ nanorods over the same NO₂ concentration range. The underlying mechanism for the enhanced NO₂ sensing properties of the core-shell nanorod sensor can be explained by the potential barrier-controlled carrier transport mechanism.

PACS

61.46. + w; 07.07.Df; 73.22.-f     

Selective growth of ZnO nanorods on microgap electrodes and their applications in UV sensors

Selective area growth of ZnO nanorods is accomplished on microgap electrodes (spacing of 6 μm) by using a facile wet chemical etching process. The growth of ZnO nanorods on a selected area of microgap electrode is carried out by hydrothermal synthesis forming nanorod bridge between two electrodes. This is an attractive, genuine, direct, and highly reproducible technique to grow nanowire/nanorod onto the electrodes on selected area. The ZnO nanorods were grown at 90°C on the pre-patterned electrode system without destroying the electrode surface structure interface and geometry. The ZnO nanorods were tested for their application in ultraviolet (UV) sensors. The photocurrent-to-dark (Iph/Id) ratio was 3.11. At an applied voltage of 5 V, the response and recovery time was 72 and 110 s, respectively, and the response reached 2 A/W. The deposited ZnO nanorods exhibited a UV photoresponse that is promising for future cost-effective and low-power electronic UV-sensing applications.     

Growth temperature dependent properties of ZnO nanorod arrays on glass substrate prepared by wet chemical method

In this work, ZnO nanorod arrays were grown on glass substrate by the wet chemical method, and the effect of synthesis temperature on the properties was investigated. The grown nanorods were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman and Photoluminescence (PL) measurements. XRD pattern showed that nanorod prepared at 80 °C and 90 °C has high crystallinity with wurtzite structure and orientated along the c-axis. However, nanorods were not formed at 60 °C and 70 °C due to less energy supply for the growth of the ZnO. FE-SEM results showed that the morphology and the size of ZnO can be effectively controlled. In particular, as the temperature increased, diameter of the nanorod was increased while length decreased. Raman scattering spectra of ZnO nanorod arrays revealed the characteristic E₂^high mode that is related to the vibration of oxygen atoms in the wurtzite ZnO. Room-temperature PL spectra of the ZnO nanorods revealed a near-band-edge (NBE) emission peak. The NBE (UV light emission) band at ~383 nm might be attributed to the recombination of free exciton. The narrow full-width at half-maximum (FWHM) of the UV emission indicated that ZnO nanorods had high crystallinity.     

Growth and optical properties of ZnO nanorod arrays on Al-doped ZnO transparent conductive film

ZnO nanorod arrays (NRAs) on transparent conductive oxide (TCO) films have been grown by a solution-free, catalyst-free, vapor-phase synthesis method at 600°C. TCO films, Al-doped ZnO films, were deposited on quartz substrates by magnetron sputtering. In order to study the effect of the growth duration on the morphological and optical properties of NRAs, the growth duration was changed from 3 to 12 min. The results show that the electrical performance of the TCO films does not degrade after the growth of NRAs and the nanorods are highly crystalline. As the growth duration increases from 3 to 8 min, the diffuse transmittance of the samples decreases, while the total transmittance and UV emission enhance. Two possible nanorod self-attraction models were proposed to interpret the phenomena in the sample with 9-min growth duration. The sample with 8-min growth duration has the highest total transmittance of 87.0%, proper density about 75 μm⁻², diameter about 26 nm, and length about 500 nm, indicating that it can be used in hybrid solar cells.     

Room-temperature nonequilibrium growth of controllable ZnO nanorod arrays

In this study, controllable ZnO nanorod arrays were successfully synthesized on Si substrate at room temperature (approx. 25°C). The formation of controllable ZnO nanorod arrays has been investigated using growth media with different concentrations and molar ratios of Zn(NO₃)₂ to NaOH. Under such a nonequilibrium growth condition, the density and dimension of ZnO nanorod arrays were successfully adjusted through controlling the supersaturation degree, i.e., volume of growth medium. It was found that the wettability and electrowetting behaviors of ZnO nanorod arrays could be tuned through variations of nanorods density and length. Moreover, its field emission property was also optimized by changing the nanorods density and dimension.     

Cu-doped ZnO nanorod arrays: the effects of copper precursor and concentration

Cu-doped ZnO nanorods have been grown at 90°C for 90 min onto a quartz substrate pre-coated with a ZnO seed layer using a hydrothermal method. The influence of copper (Cu) precursor and concentration on the structural, morphological, and optical properties of ZnO nanorods was investigated. X-ray diffraction analysis revealed that the nanorods grown are highly crystalline with a hexagonal wurtzite crystal structure grown along the c-axis. The lattice strain is found to be compressive for all samples, where a minimum compressive strain of −0.114% was obtained when 1 at.% Cu was added from Cu(NO₃)₂. Scanning electron microscopy was used to investigate morphologies and the diameters of the grown nanorods. The morphological properties of the Cu-doped ZnO nanorods were influenced significantly by the presence of Cu impurities. Near-band edge (NBE) and a broad blue-green emission bands at around 378 and 545 nm, respectively, were observed in the photoluminescence spectra for all samples. The transmittance characteristics showed a slight increase in the visible range, where the total transmittance increased from approximately 80% for the nanorods doped with Cu(CH₃COO)₂ to approximately 90% for the nanorods that were doped with Cu(NO₃)₂.     

A catalyst-free growth of aluminum-doped ZnO nanorods by thermal evaporation

The growth of Al:ZnO nanorods on a silicon substrate using a low-temperature thermal evaporation method is reported. The samples were fabricated within a horizontal quartz tube under controlled supply of O₂ gas where Zn and Al powders were previously mixed and heated at 700°C. This allows the reactant vapors to deposit onto the substrate placed vertically above the source materials. Both the undoped and doped samples were characterized using scanning electron microscopy (SEM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) measurements. It was observed that randomly oriented nanowires were formed with varying nanostructures as the dopant concentrations were increased from 0.6 at.% to 11.3 at.% with the appearance of ‘pencil-like’ shape at 2.4 at.%, measuring between 260 to 350 nm and 720 nm in diameter and length, respectively. The HRTEM images revealed nanorods fringes of 0.46 nm wide, an equivalent to the lattice constant of ZnO and correspond to the (0001) fringes with regard to the growth direction. The as-prepared Al:ZnO samples exhibited a strong UV emission band located at approximately 389 nm (E _g  = 3.19 eV) with multiple other low intensity peaks appeared at wavelengths greater than 400 nm contributed by oxygen vacancies. The results showed the importance of Al doping that played an important role on the morphology and optical properties of ZnO nanostructures. This may led to potential nanodevices in sensor and biological applications.     

Additive‐Free Synthesis of Cerium Oxide Nanorods with Reaction Temperature‐Tunable Aspect Ratios

The ability to control the morphology of fluorite‐structured cerium oxide nanomaterials is an important step in the design of cerium oxide‐based catalysts. Herein, we report an additive‐free synthesis of cerium oxide nanorods with highly tunable aspect ratios from ~6:1 to 40:1. The use of a microwave hydrothermal method allows for both rapid synthesis and temperature control. The ability to control the length of the nanorods from <51 nm to >1.7 μm by varying only the reaction temperature was demonstrated over a temperature range of 80°C to 200°C. The formation of the resulting nanorods was investigated using selected‐area electron‐diffraction and high‐resolution transmission electron microscopy. The surface area of nanorod products was found to decrease from 117 to 22 m²/g as the reaction temperature increased from 80°C to 200°C, complementing the general trend of the increasing aspect ratios of these products.     

ZnO纳米棒水热法生长与表征

采用两步法在FTO导电玻璃衬底上制备ZnO纳米棒,首先利用浸渍-提拉法在FTO导电玻璃衬底上制备ZnO晶种层,然后把有ZnO晶种层的FTO衬底放入盛有生长溶液的反应釜中利用水热法制备ZnO纳米棒.研究了生长溶液的浓度、生长温度和生长时间对所制备的对ZnO纳米棒阵列的微结构和光致发光性能的影响,利用X射线衍射(XRD)、扫描电子显微镜(SEM)和光致发光谱(PL)研究了ZnO样品的结构、形貌和光学性质.实验结果表明:所制备的ZnO纳米棒呈现六方纤锌矿结构,沿(002)晶面择优取向生长,纳米棒的平均直径约为100 nm,长度约为2.5 μm.所制备的ZnO纳米棒在390 nm附近具有很强的紫外发光峰和在550 nm附近有较弱的宽绿光发光峰.     

Tuning of structural,optical, and magnetic properties of ultrathin and thin ZnO nanowire arrays for nano device applications

One-dimensional (1-D) ultrathin (15 nm) and thin (100 nm) aligned 1-D (0001) and (0001¯) oriented zinc oxide (ZnO) nanowire (NW) arrays were fabricated on copper substrates by one-step electrochemical deposition inside the pores of polycarbonate membranes. The aspect ratio dependence of the compressive stress because of the lattice mismatch between NW array/substrate interface and crystallite size variations is investigated. X-ray diffraction results show that the polycrystalline ZnO NWs have a wurtzite structure with a = 3.24 Å, c = 5.20 Å, and [002] elongation. HRTEM and SAED pattern confirmed the polycrystalline nature of ultrathin ZnO NWs and lattice spacing of 0.58 nm. The crystallite size and compressive stress in as-grown 15- and 100-nm wires are 12.8 nm and 0.2248 GPa and 22.8 nm and 0.1359 GPa, which changed to 16.1 nm and 1.0307 GPa and 47.5 nm and 1.1677 GPa after annealing at 873 K in ultrahigh vacuum (UHV), respectively. Micro-Raman spectroscopy showed that the increase in E₂ (high) phonon frequency corresponds to much higher compressive stresses in ultrathin NW arrays. The minimum-maximum magnetization magnitude for the as-grown ultrathin and thin NW arrays are approximately 8.45 × 10⁻³ to 8.10 × 10⁻³ emu/g and approximately 2.22 × 10⁻⁷ to 2.190 × 10⁻⁷ emu/g, respectively. The magnetization in 15-nm NW arrays is about 4 orders of magnitude higher than that in the 100 nm arrays but can be reduced greatly by the UHV annealing. The origin of ultrathin and thin NW array ferromagnetism may be the exchange interactions between localized electron spin moments resulting from oxygen vacancies at the surfaces of ZnO NWs. The n-type conductivity of 15-nm NW array is higher by about a factor of 2 compared to that of the 100-nm ZnO NWs, and both can be greatly enhanced by UHV annealing. The ability to tune the stresses and the structural and relative occupancies of ZnO NWs in a wide range by annealing has important implications for the design of advanced photonic, electronic, and magneto-optic nano devices.     

Pulsed laser deposition of single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 core/shell nanowires

Single-crystalline Cu₇In₃/CuIn_0.8Ga_0.2Se₂ (CI/CIGS) core/shell nanowires are fabricated by pulsed laser deposition with Ni nanoparticles as catalyst. The CI/CIGS core/shell nanowires are made up of single-crystalline CI cores surrounded by single-crystalline CIGS shells. The CI/CIGS nanowires are grown at a considerably low temperature (350°C ~ 450°C) by vapor-liquid-solid mode combined with vapor-solid mode. The distribution density of the nanowires increases with the increasing of the deposition duration, and the substrate temperature determines the lengths of the nanowires. The U-V absorption spectra of the CIGS thin films with and without the CI/CIGS core/shell nanowires demonstrate that the CI/CIGS nanowires can remarkably enhance the absorption of CIGS thin films in the spectrum range of 300 to 900 nm.

PACS

61.46. + w; 61.41.e; 81.15.Fg; 81.07.b     

Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

Gallium and aluminum co-doped zinc oxide (GAZO) films were produced by magnetron sputtering. The GAZO films were post-annealed in either vacuum or hydrogen microwave plasma. Vacuum- and hydrogen microwave plasma-annealed GAZO films show different surface morphologies and lattice structures. The surface roughness and the spacing between adjacent (002) planes decrease; grain growth occurs for the GAZO films after vacuum annealing. The surface roughness increases and nanocrystals are grown for the GAZO films after hydrogen microwave plasma annealing. Both vacuum and hydrogen microwave plasma annealing can improve the electrical and optical properties of GAZO films. Hydrogen microwave plasma annealing improves more than vacuum annealing does for GAZO films. An electrical resistivity of 4.7 × 10⁻⁴ Ω-cm and average optical transmittance in the visible range from 400 to 800 nm of 95% can be obtained for the GAZO films after hydrogen microwave plasma annealing. Hybrid organic photovoltaic (OPV) devices were fabricated on the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO-coated glass substrates. The active layer consisted of blended poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in the OPV devices. The power conversion efficiency of the OPV devices is 1.22% for the hydrogen microwave plasma-annealed GAZO films, which is nearly two times higher compared with that for the as-deposited GAZO films.     

Morphological characterization of aluminum-doped zinc oxide nanomaterials (AZO) for dye-sensitized solar cells

In this work, aluminum-doped ZnO (AZO, Al:ZnO) nanocomposite materials were prepared by a simple hydrothermal method using the microwave oven. Zinc oxide nanostructures were doped with aluminum in different dopant concentrations (0.5%, 1.0%, 1.5% and 2.0%). AZO materials were analyzed using XRD, SEM and EDX measurements. Also dye-sensitized solar cell (DSSC) performances of AZOs were investigated. The scanning electron microscopy (SEM) analysis confirms that the synthesized AZO nanomaterials were nanorods and nanoplates in shape and have 200 nm to 974 nm sizes in length and 116.1-269.5 nm in diameters (shown Figure 4-5). Dye-sensitized solar cell efficiencies are higher in 0.5% and 1% AZO nanorod materials. We have found the maximum efficiency as 1.94% for 1% doped AZO nanorod materials.     

Effect of ZnO seed layers on the solution chemical growth of ZnO nanorod arrays

High density ZnO nanorod arrays were grown on Si substrates coated with ZnO seed layers via aqueous solution route. The ZnO seed layers were deposited on the substrate using DC reactive sputtering and RF magnetron sputtering. It was found that ZnO seed layer with (1 0 3) preferred orientation, prepared using DC reactive sputtering, did not facilitate the formation of ZnO nanorods in the solution grown process. Prior seeding of the surface by ZnO layer with (0 0 2) preferred orientation, deposited using RF magnetron sputtering, leads to nucleation sites on which ZnO nanorod arrays can grow in a highly aligned fashion. ZnO nanorods with well-defined hexagonal facets (0 0 2) were grown almost vertically over the entire substrate. The uniformity and alignment of the nanorod arrays are strongly related to the properties of underneath ZnO seed layers.     

Structure of molybdenum oxide clusters prepared in zeolite cages

Molybdenum hexacarbonyl entrapped in NaY zeolite was oxidized with molecular oxygen by UV-irradiation at room temperature or by thermal treatment at 343–373 K. Both oxidation procedures resulted in the identical molybdenum(VI) oxide; molybdenum dimer species (Mo-Mo distance: 0.321 nm). The Mo-Mo bonding of the oxide species was degraded on an evacuation at 673 K, while it was considerably stable in the presence of gaseous oxygen.     

Seedless Pattern Growth of Quasi-Aligned ZnO Nanorod Arrays on Cover Glass Substrates in Solution

A hybrid technique for the selective growth of ZnO nanorod arrays on wanted areas of thin cover glass substrates was developed without the use of seed layer of ZnO. This method utilizes electron-beam lithography for pattern transfer on seedless substrate, followed by solution method for the bottom-up growth of ZnO nanorod arrays on the patterned substrates. The arrays of highly crystalline ZnO nanorods having diameter of 60 ± 10 nm and length of 750 ± 50 nm were selectively grown on different shape patterns and exhibited a remarkable uniformity in terms of diameter, length, and density. The room temperature cathodluminescence measurements showed a strong ultraviolet emission at 381 nm and broad visible emission at 585–610 nm were observed in the spectrum.     

Controlled fabrication of Sn/TiO2 nanorods for photoelectrochemical water splitting

In this work, we investigate the controlled fabrication of Sn-doped TiO₂ nanorods (Sn/TiO₂ NRs) for photoelectrochemical water splitting. Sn is incorporated into the rutile TiO₂ nanorods with Sn/Ti molar ratios ranging from 0% to 3% by a simple solvothermal synthesis method. The obtained Sn/TiO₂ NRs are single crystalline with a rutile structure. The concentration of Sn in the final nanorods can be well controlled by adjusting the molar ratio of the precursors. Photoelectrochemical experiments are conducted to explore the photocatalytic activity of Sn/TiO₂ NRs with different doping levels. Under the illumination of solar simulator with the light intensity of 100 mW/cm², our measurements reveal that the photocurrent increases with increasing doping level and reaches the maximum value of 1.01 mA/cm² at −0.4 V versus Ag/AgCl, which corresponds to up to about 50% enhancement compared with the pristine TiO₂ NRs. The Mott-Schottky plots indicate that incorporation of Sn into TiO₂ nanorod can significantly increase the charge carrier density, leading to enhanced conductivity of the nanorod. Furthermore, we demonstrate that Sn/TiO₂ NRs can be a promising candidate for photoanode in photoelectrochemical water splitting because of their excellent chemical stability.     

Microstructure and optical properties of nanocrystalline Cu2O thin films prepared by electrodeposition

Cuprous oxide (Cu₂O) thin films were prepared by using electrodeposition technique at different applied potentials (−0.1, −0.3, −0.5, −0.7, and −0.9 V) and were annealed in vacuum at a temperature of 100°C for 1 h. Microstructure and optical properties of these films have been investigated by X-ray diffractometer (XRD), field-emission scanning electron microscope (SEM), UV-visible (vis) spectrophotometer, and fluorescence spectrophotometer. The morphology of these films varies obviously at different applied potentials. Analyses from these characterizations have confirmed that these films are composed of regular, well-faceted, polyhedral crystallites. UV–vis absorption spectra measurements have shown apparent shift in optical band gap from 1.69 to 2.03 eV as the applied potential becomes more cathodic. The emission of FL spectra at 603 nm may be assigned as the near band-edge emission.     

Tuning of defects in ZnO nanorod arrays used in bulk heterojunction solar cells

With particular focus on bulk heterojunction solar cells incorporating ZnO nanorods, we study how different annealing environments (air or Zn environment) and temperatures impact on the photoluminescence response. Our work gives new insight into the complex defect landscape in ZnO, and it also shows how the different defect types can be manipulated. We have determined the emission wavelengths for the two main defects which make up the visible band, the oxygen vacancy emission wavelength at approximately 530 nm and the zinc vacancy emission wavelength at approximately 630 nm. The precise nature of the defect landscape in the bulk of the nanorods is found to be unimportant to photovoltaic cell performance although the surface structure is more critical. Annealing of the nanorods is optimum at 300°C as this is a sufficiently high temperature to decompose Zn(OH)₂ formed at the surface of the nanorods during electrodeposition and sufficiently low to prevent ITO degradation.