Simulation of optically injection-locked microwave oscillatorsusing a novel SPICE model

Optical injection-locking of GaAs field-effect transistor microwave oscillators has been examined experimentally as well as by using two different optical interaction models. An additional simulation program with IC emphasis (SPICE) circuit for observing small locking ranges is also described. This first-order interaction model which utilizes a standard version of SPICE produces predictions of injection-locking range in excellent agreement with measured results. These tools allow the oscillator designer to optimize the injection-locking performance by analyzing various circuit topologies and DC bias levels     

基于注频锁相技术的发射波束形成系统

研究了利用注频锁相技术实现低成本、高集成度、高效率的发射波束形成系统。首先介绍了发射波束形成的原理,并研究了注频锁相振荡器相位系统平衡点的稳定性,根据注频锁相振荡器的相位噪声理论给出了注频锁相振荡器阵列的设计原则,然后根据理论分析设计了一种可以产生高稳定度、低相位噪声具有任意相位加权系数的多通道射频相干信号的波束形成系统,利用计算机仿真该系统实现了发射波束扫描,证明了基于注频锁相技术的发射波束形成系统的可实现性。最后搭建了四通道注频锁相振荡器阵列,测量结果表明注频锁相振荡器阵列可以产生具有任意相位加权系统的多通道相干信号,进一步证明了该发射波束形成系统的有效性。     

注频锁相振荡器阵列的低相位噪声信号产生方法

提出了注频锁相振荡器阵列的拓扑结构及相位噪声模型,根据该模型简要推导了注频锁相振荡器阵列相位噪声的计算公式并对整个阵列的相位噪声进行了分析,完成了1×4单元注频锁相振荡器阵列相位噪声的测试,测试结果与理论分析吻合,最终得出了注频锁相振荡器阵列的低相位噪声信号产生方法。     

Design and Analysis of CMOS Subharmonic Injection-Locked Frequency Triplers

$K$- and $V$-band CMOS differential subharmonic injection-locked frequency triplers (ILFTs) are proposed, analyzed, and designed. Based on the proposed ILFT structure, models for the injection-locking range and the output phase noise are developed. A $K$-band ILFT is designed and fabricated using 0.18-$mu$m standard CMOS technology. The measured injection-locking range is 1092 MHz with a dc power consumption of 0.45 mW and an input injection power of 4 dBm. The harmonic rejection ratios are 22.65, 30.58, 29.29, 40.35 dBc for the first, second, fourth, and fifth harmonics, respectively. The total injection-locking range of the $K$-band ILFT can achieve 3915 MHz when the varactors are used and the dc power consumption is increased to 2.95 mW. A $V$-band ILFT is also designed and fabricated using 0.13-$mu$ m standard CMOS technology. The measured injection-locking range is 1422 MHz with 1.86-mW dc power consumption and 6-dBm input injection power. The injection-locking range of the proposed ILFT is similar to the tuning range of a conventional varactor-tuned bulk-CMOS voltage-controlled oscillator (VCO). Moreover, the proposed ILFT has a greater output power and a lower dc power consumption level than a VCO. As a result, it is feasible to use the proposed ILFT in low-power millimeter-wave synthesizers.      

Low-power integrating frequency difference-to-voltage converter with applications in injection-locked FLL

This paper presents a new integrating frequency difference-to-voltage converter (iFDVC) with applications in injection-locked frequency-locked loops (FLLs). The proposed iFDVC features low power consumption, high frequency sensitivity, a zero static frequency error, and a low sensitivity to PVT (process, voltage, and temperature) uncertainty. A detailed analysis of the time and frequency-domain behaviour of the iFDVC is presented. The effectiveness of the iFDVC is studied by embedding it in a FLL with a relaxation oscillator. To shorten locking process without sacrificing frequency accuracy, injection-locking is employed. The loop dynamics of the FLL with and without injection-locking are analyzed. The simulation results of an injection-locked FLL with the proposed iFDVC designed in an IBM 130 nm 1.2 V CMOS technology demonstrate that the injection-locked FLL has a lock time 4.5 times smaller and an acquisition range 59 times larger as compared with those of the corresponding FLL without injection-locking while consuming 60 \(\upmu\)W only. The iFDVC was also implemented using off-shelf components and its performance was validated using measurement results.     

Mutual Injection-Locking and Coherent Combining of Two Individual Fiber Lasers

In this paper, mutual injection-locking and coherent combining are demonstrated with two individual erbium-doped fiber lasers that were coupled by two fiber splitters. Mutual injection-locking theory of two lasers is analyzed. In the free-running state, the far-field beam profile is a simple intensity superposition, as expected of two incoherent beams. Under mutual injection-locking, interference fringes with high contrast ratio are obtained, and the two fiber lasers lase at the same wavelength with a stable output power. We have found that the two fiber lasers are always in out-of-phase mode, which is consistent with theoretical analysis. Coherent beam combining by mutual injection-locking is realized without the need for length or amplitude control. This method can be easily scaled to combine more beams.     

Locking characteristics of a side-mode injected semiconductor laser

This paper is focused on an experimental study of the injection-locking bandwidth and the relaxation oscillation frequency in a side-mode injection-locked semiconductor laser. It is shown that, for such a laser, the injection-locking bandwidth and the relaxation oscillation frequency are related to the injection power and the wavelength of the target injection mode. At fixed launched injection power, the injection-locking bandwidth and relaxation oscillation frequency can be increased when the injection wavelength is detuned to the short-wavelength side of the free-running wavelength, while the relaxation oscillation frequency decreases when the injection wavelength is set to the long-wavelength side of the free-running wavelength. The results are in good agreement with theoretical predictions     

Nonlinear time-domain analysis of injection-locked microwave MESFEToscillators

In this paper, injection-locked MESFET oscillators are analyzed using several numerical models. The injection-locking behavior of the van der Pol equation and of a more complex representation using the Curtice-Cubic MESFET model are investigated. Analysis and experimental results are compared for an NE71083 transistor oscillator operating at 0.5 GHz. The deficiencies of using a van der Pol oscillator model are pointed out. Time-domain results from the complex model exhibiting multicycle and apparently chaotic behaviors are also examined, and point to problems with common nonlinear simulation techniques for these circuits     

All-optical 3R regeneration technique using injection-locking ingain-switched DFB-LD

A new all-optical 3R regeneration technique using injection-locking in a gain-switched DFB-LD is proposed. The operation of the technique is confirmed numerically and experimentally. Both simulation and experimental results show that the degraded RZ pulses are reshaped, retimed, and regenerated by injection-locking, into short pulses generated by gain-switching. Moreover, error-free all-optical 3R regeneration at 2.5 Gbit/s has been successfully achieved, with 1.5 dB negative penalty     

基于注频锁相技术的接收天线本振阵列

文中以注频锁相技术为基础,提出一维和二维注频锁相耦合本振阵列基本结构,分析了注频锁相本振阵列的相位动力学方程,推导了稳定同步状态本振信号间的相对相移与振荡器自由振荡频率的关系,为注频锁相技术在接收天线本振阵列的应用提供理论基础.     

TDM-PON上行信号光功率均衡器的锁模特性

为了减小时分复用无源光网络（TDM-PON）上行信号光波长的飘移,基于TDM-PON上行信号光功率均衡器架构,采用单模激光注入锁定光网络单元（ONU）法布里-珀罗（F-P）激光器（LD）方法,研究了F-P LD输出光波长的锁模特性,包括锁模的范围、驱动电流对锁模特性的影响、锁模前后温度变化引起F-P LD光波长变化情况等。结果表明,当驱动电流为9mA时,F-P LD可被锁模的波长范围为0.38nm,大于ONU上行光波长因环境温度变化5℃而产生的波长位移量0.25nm,F-P LD被锁模可使ONU上行信号的光波长相同且稳定,降低光功率均衡后的噪声。     

Self-injection locking of DFB laser diode with Brillouin amplification in optical fibre feedback

A novel optical injection-locking configuration utilising Brillouin amplification in optical fibre feedback is reported. The proposed structure exhibits properties inherent in two phenomena, self-injection locking and injection-locking in master-slave configuration at the same time. Significant narrowing of the locked DFB laser linewidth was recorded. The configuration provides intensity-stable Stokes generation without a high-frequency external modulator and generator.     

Injection-locking technique applied to a 170 km transmission experiment at 445.8 Mbit/s

Transmission with a BER less than 10?11 has been achieved using an injection-locking technique with a 445.8 Mbit/s RZ signal over a 170 km single-mode fibre. The injection-locking technique provides a single-longitudinal-mode optical source with a 35 dB main/side-mode power ratio and a 1.5 GHz spectral width.     

基于90 nm CMOS工艺的37 GHz分频器

对高速分频器的注入锁定特性进行了研究,并实现了一个基于电流模逻辑的分频器。该分频器采用了电感峰值技术,分频范围可达25~37.3 GHz,电源电压为1.2 V,功耗为24 mW。芯片采用TSMC 90 nm CMOS工艺设计制造,并给出了测试结果。     

A New Amplifier Model for Resonance Enhancement of Optically Injection-Locked Lasers

A new Fabry-Perot amplifier model is established based on parameters extracted from the injection-locking rate equations to explain the resonance frequency enhancement and the small-signal frequency response behavior of injection-locked vertical-cavity surface-emitting lasers. Simulations using this amplifier model in conjunction with injection-locking rate equations show excellent agreement with the experimental results.     

注入锁定半导体激光器全光波长转换技术

波长转换器是光通信网络中的一个重要器件。而除半导体光放大器（SOA）外，半导体激光器也是进行波长变换的一种很好选择。基于半导体激光器的注入锁定波长变换技术具有转换带宽较大、啁啾小、消光比特性好、结构简单、成本低廉等诸多优点。将探测光与信号光同步注入法布里-珀罗（F-P）半导体激光器，可以通过信号光功率的变化控制激光器锁模与失锁，导致腔内纵模变化，探测光随之被共振放大或减弱，从而将信息由信号光转换到探测光频率上。从静态实验入手，对半导体激光器的注入锁定现象及光信号控制法布里-珀罗纵模移动等问题分别进行了研究。分析了动态转换激光器工作点的选取问题，在动态实验中实现了较宽范围的正相与反相波长转换，转换速率达到了10Gb／s。     

Planar Radiating Oscillator Using Butterfly-Shaped Patch Element and Spatial Power-Combining Array

A planar radiating oscillator using a butterfly-shaped patch element is described. To obtain an injection-locking range that can be changed and low cross-polarization, we used a butterfly-shaped patch. The patch element was able to change the injection-locking range while maintaining low cross-polarization, and two types of patch were compared. As one application, we designed and fabricated 1x2, 2x1 and 2x2 spatial power-combining arrays by using radiative mutual coupling. The 2x2 array was successfully operated with a single-bias supply without using a 3-D (three-dimensional) Fabry-Perot cavity. An equivalent isotropic radiated power of 2.5 W was measured at X-band.     

S波段大功率注入锁频磁控管的输出特性

在多路注入锁频大功率连续波磁控管的相干功率合成实验中,输出特性分析有利于提升合成效率。搭建了一款S波段20 kW连续波磁控管注入实验系统,该系统包含幅频可调的微波源和移相器,由磁控管信号发生系统、注入锁定系统以及相位差检测系统3个小系统组成。利用外部注入信号,分别对磁控管输出信号的相位稳定度、频谱和相位噪声进行实验分析,实现了对实际磁控管在外部注入前后的特性分析。其中,相位差波动最小不足4°,最大17°,锁频带宽在2.9~13 MHz之间变化,在偏移频率1 MHz内对相位噪声抑制超过40 dB;并对注入锁频信号与输出信号之间的关系进行了总结,为多路大功率磁控管的功率合成提供理论依据。     

Demonstration of a 311-GHz Fundamental Oscillator Using InP HBT Technology

In this paper, a sub-millimeter-wave HBT oscillator is reported. The oscillator uses a single-emitter 0.3 m15 m InP HBT device with maximum frequency of oscillation greater than 500 GHz. The passive components of the oscillator are realized in a two metal process with benzocyclobutene used as the primary transmission line dielectric. The oscillator is implemented in a common base topology due to its inherent instability. The design includes an on-chip resonator, output matching circuitry, and injection locking port. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Additionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. This is the first fundamental HBT oscillator operating above 300 GHz.     

A 15-GHz broad-band /spl divide/2 frequency divider in 0.13-/spl mu/m CMOS for quadrature generation

This letter presents a 0.13-/spl mu/m CMOS frequency divider realized with an injection-locking ring oscillator. This topology can achieve a larger input frequency range and better phase accuracy with respect to injection-locking LC oscillators, because of the smoother slope of the loop gain phase-frequency plot. Post layout simulations show that the circuit is able to divide an input signal spanning from 7 to 19GHz, although the available tuning range of the signal source limited the experimental verification to the interval 11-15GHz, featuring a 31% locking range. The divider dissipates 3mA from a 1.2-V power supply.