Epitaxial growth of ZnO nanorods on electrospun ZnO nanofibers by hydrothermal method

In this paper, we report a new ZnO nanofibers-nanorods structure which was successfully prepared by the electrospun ZnO nanofibers as seed to guide hydrothermal epitaxial growth of the ZnO nanorods. The structure was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL). The XRD results indicate that ZnO nanofibers obtained at 600° have high crystallinity with a typical hexagonal wurtzite structure. Furthermore compared with the strongest diffraction of ZnO nanofibers in (101) plane, the diffraction from (002) plane of ZnO nanofibers-nanorods becomes the strongest. The SEM shows that the diameters of epitaxial-grown ZnO nanorods on ZnO nanofibers were approximately 100–200?nm. The PL spectrum shows that the ZnO nanofibers-nanorods have a broad green-yellow emission around 537?nm, in contrast to that of ZnO nanofibers, the peak had obvious redshift about 24?nm and the luminous intensity weakened.     

Epitaxial growth and thermal stability of silicon layers on crystalline gadolinium oxide

In this work, an unconventional approach for epitaxial growth of Si on single-crystalline rare-earth oxide is presented using molecular beam epitaxy under ultra-high vacuum. Surface and bulk crystalline structures as well as chemical content were examined. Silicon-on-insulator layers were fabricated by encapsulated solid phase epitaxy on Si(111) substrate. The gadolinium oxide capping layer was removed by wet-chemical etching. The remaining silicon layer is single crystalline without any impurities and exhibits 7 × 7 reconstructed surface after annealing in very low silicon flux in the growth chamber. The thermal stability of the fabricated silicon-on-insulator structure was studied by step-wise heating under ultra-high vacuum conditions. The fabricated ultra-thin (10-15 nm) silicon-on-oxide layers remain structurally and chemically stable up to 900 °C.     

Structural analysis of vertically-aligned single crystalline ZnO nanorods grown on different seed layers with chemical solution deposition

We report the structural properties of the vertically-oriented ZnO nanorods fabricated on various ZnO seed layers with chemical solution deposition (CSD) technique. The ZnO nanorods were prepared using an aqueous solution with Zinc nitrate (Zn(NO3)2 x 6H2O, Aldrich) and hexamethylenetetramine (HMT, Aldrich) in a convection oven. A-plane sapphire substrates with a deposited ZnO thin film were placed upside down in a quartz holder to avoid any micro-crystalline contamination. Especially, our hydro-thermal syntheses are automatically processed on precision pump drive systems (Masterflex) to accurately control the pH of the aqueous solution. The [002] crystal orientation of the ZnO seed layer was observed by the X-ray diffraction pattern. Structural features of ZnO nanorods were systematically analyzed by scanning electron microscopy and tunneling electron microscopy, together with selective area electron diffraction patterns. Experimental observations clearly demonstrated the dependence of the growth direction of the ZnO nanorods on the crystal structures of the ZnO seed layers.     

Fabrication of ZnO nanorods using metal nanoparticles as growth nuclei

ZnO nanorods were produced by pulsed laser deposition (PLD). Drops of nanoparticle colloid (gold or silver) were placed on silica substrates to form growth nuclei. All nanoparticles were monocrystalline, with well-defined crystal surfaces and a negative electrical charge. The ZnO nanorods were produced in an off-axis PLD configuration at oxygen pressure of 5 Pa. The growth of the nanorods started from the nanoparticles in different directions, as one nanoparticle could become a nucleus for more than one nanorod. The low substrate temperature used indicates the absence of a catalyst during the growth of the nanorods. The diameters of the fabricated 1-D ZnO nanostructures were in the range of 50-120 nm and their length was determined by the deposition time.     

Growth of compact arrays of optical quality single crystalline ZnO nanorods by low temperature method

We report the synthesis and optical properties of compact and aligned ZnO nanorod arrays (dia, ∼ 50–200 nm) grown on a glass substrate with varying seed particle density. The suspension of ZnO nanoparticles (size, ∼ 15 nm) of various concentrations are used as seed layer for the growth of nanorod arrays via selfassembly of ZnO from solution. We studied the effect of various growth parameters (such as seeding density, microstructure of the seed layer) as well as the growth time on the growth and alignment of the nanorods. We find that the growth, areal density and alignment of the nanorods depend on the density of seed particles which can be controlled. It is observed that there is a critical density of the seed particles at which nanorod arrays show maximum preferred orientation along [002] direction. The minimum and maximum radius of the aligned nanorods synthesized by this method lie in the range 50–220 nm which depend on the seeding density and time of growth. These nanorods have a bandgap of 3.3 eV as in the case of bulk crystals and show emission in the UV region of the spectrum (∼ 400 nm) due to excitonic recombination and defect related emission in the visible region.     

Synthesis of violet light emitting single crystalline ZnO nanorods by using CTAB-assisted hydrothermal method

ZnO nanorods were grown by cetyl trimethylammonium bromide assisted hydrothermal technique from a single molecular precursor. The phase and structural analysis were carried out by X-ray diffraction technique and Raman spectroscopy, respectively. The phase and structural analysis has suggested that as prepared nanorods have hexagonal wurzite structure. Morphology of the nanorods was investigated by electron microscopy techniques which showed the formation of well dispersed nanorods of 100 ± 10 nm in diameter and 900 ± 100 nm in length. Optical properties were investigated by photoluminescence spectroscopy. As prepared ZnO nanorods have shown intense room temperature photoluminescence peak in the violet region at 403 nm. Absence of defect mediated green luminescence peak suggests the formation of well crystalline ZnO nanorods without any impurities or structural defects.     

Epitaxial growth of ZnO layers on (111) GaAs substrates by laser molecular beam epitaxy

ZnO layers were grown on (111) GaAs substrates by laser molecular epitaxy at substrate temperatures between 200 and 550 °C. X-ray diffraction analysis revealed that c-axis of ZnO epilayer with a wurtzite structure is perpendicular to the substrate surface. X-ray rocking curves and Raman spectroscopy showed that the crystal quality of ZnO epilayers depends on the substrate temperature during the growth. Strong near-band-edge emission in the UV region without any deep-level emissions was observed from the ZnO epilayers at room temperature. The results indicate that laser molecular beam epitaxy is a promising growth method for obtaining high-quality ZnO layers on (111) GaAs substrates.     

Single crystalline ZnO nanorods grown by a simple hydrothermal process

Single crystalline ZnO nanorods with wurtzite structure have been prepared by a simple hydrothermal process. The microstructure and composition of the products were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM, energy dispersive X-ray spectrum (EDS) and Raman spectrum. The nanorods have diameters ranging from 100 nm to 800 nm and length of longer than 10 µm. Raman peak at 437.8 cm^− 1 displays the characteristic peak of wurtzite ZnO. Photoluminescence (PL) spectrum shows a blue light emission at 441 nm, which is related to radiative recombination of photo-generated holes with singularly ionized oxygen vacancies.     

Charge influence and growth mechanism of ZnO nanorods

We demonstrate the influence of charges near the substrate surface on vertically aligned ZnO nanorod growth. ZnO nanorods were fabricated on n-type GaN with and without H+ treatments by catalyst-free metal-organic chemical vapor deposition. The ZnO nanorods grown on n-GaN films were vertically well-aligned and had a well-ordered wurtzite structure. However, the ZnO did not form into nanorods and the crystal quality was very degraded as they were deposited on the H+ treated n-GaN films. The charge influence was also observed in the ZnO nanorod growth on sapphire substrates. These results implied that the charges near the substrate surface dominantly affected on the crystalization and formation of ZnO nanorods.     

Controlled hydrothermal growth of multi-length-scale ZnO nanowires using liquid masking layers

In this study, we demonstrate a method for creating multi-length-scale ZnO nanowires in a controllable manner on diverse planar and curvilinear substrates by introducing immiscible liquid masking layers (LMLs) above and beneath a nutrient solution used in hydrothermal growth. The confinement of volatile reactants by the LMLs stabilizes the pH, which is an important parameter in determining the shape of the nanowires, to enable growth in a stable manner. The conformal wettability of the LMLs provides freedom in the choice of target substrates and allows for the possibility of mounting spatially moving stages without the use of a specially designed solid lid. Selective growth within the growth zone defined by the LMLs in a dynamic- and/or static-mode can create various types of ZnO nanowires with gradual or terraced length profiles in two- or three-dimensional geometries. For a device application, we developed cylindrical photodetectors with the configuration of Cr/ZnO seed/ZnO nanowires/poly(3-hexylthiophene-2,5-diyl)/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) to show the ability to spatially modulate the photo-sensitivity by controlled hydrothermal growth of diverse length scales of ZnO nanowires using the LML method.     

用水热法制备超疏水性ZnO纳米棒薄膜

采用简单的水热法制备了超疏水性ZnO纳米棒薄膜,在用磁控溅射在Si(111)衬底上生长一层ZnO籽晶层的基础上,利用水热法制备了空间取向一致的ZnO纳米棒阵列,经修饰后由亲水性转变为超疏水性.用扫描电子显微镜、X射线衍射对样品表面和结构特征进行了表征,用接触角测量仪测出水滴在ZnO纳米棒薄膜表面的接触角为(160±1)°,滚动角为5°.     

Epitaxial growth of conducting CdF2:Er layers

Heterostructures of the CdF₂:Er/CaF₂/CaF₂(111) type were grown by the method of molecular beam epitaxy. Doping with erbium was performed, for the first time in materials of this type, by subliming the metal from an effusion cell immediately during the cadmium fluoride layer growth. A special procedure of CaF₂ substrate preparation for epitaxy was developed. Measurements of the lateral conductivity of the heterostructures by a two-point-probe technique showed that, depending on the dopant (erbium) concentration, the resistivity ranges from 2.5×10⁵ to 50 Ω cm.     

Charge influence and growth mechanism of ZnO nanorods

We demonstrate the influence of charges near the substrate surface on vertically aligned ZnO nanorod growth. ZnO nanorods were fabricated on n-type GaN with and without H+ treatments by catalyst-free metal-organic chemical vapor deposition. The ZnO nanorods grown on n-GaN films were vertically well-aligned and had a well-ordered wurtzite structure. However, the ZnO did not form into nanorods and the crystal quality was very degraded as they were deposited on the H+ treated n-GaN films. The charge influence was also observed in the ZnO nanorod growth on sapphire substrates. These results implied that the charges near the substrate surface dominantly affected on the crystallization and formation of ZnO nanorods.     

Seeded growth of ZnO nanorods from NaOH solutions

Perpendicularly aligned arrays of corrugated ZnO nanorods were grown onto gold patterned LiTaO₃ substrates, coated with a sputtered ZnO seed layer. During the growth process, these substrates were held submerged in an aqueous solution comprising a 1:40 mol ratio mix of zinc nitrate hexahydrate to sodium hydroxide. The substrates were placed in a custom apparatus residing in an autoclavable storage bottle. Scanning electron micrographs, which were taken at different deposition intervals, suggest that the growth mechanism of ZnO nanorods initiates with the etching of the ZnO sputtered seed layer into hexagonal bases (> 500 nm across), from where multiple protrusions (40 nm-100 nm in width) grow atop these hexagonal bases. Such nanoprotrusions later coalesce into larger nanorods. Uniformly distributed high density corrugated nanorods, with proximal spacing between adjacent nanorods of approximately 20 nm-50 nm, were observed over the entire surface.     

Enhancement of UV emission in ZnO nanorods by growing additional ZnO layers on the surface

Ultraviolet (UV) photoluminescence emission from ZnO nanorod arrays was greatly enhanced by growing additional thin ZnO layers on the surface after thermal reduction of the nanorods. Appropriate selection of additives based on the shape of the original ZnO samples was found to be an important factor in designing the solution composition for growing the additional ZnO layers. This is because the additives modify the growth rates with respect to crystallographic planes. Adding ethylene glycol to the solution was effective for rod-shaped ZnO nanorods in enhancing the UV emission, whereas adding polyethylenimine was better for plate-like particles. These results can be explained by the presence of non-luminescent regions near the surface, where UV emission is thought to be suppressed by non-radiative surface centers. Growing additional layers on side planes increases the volume of the optically active region of ZnO nanorods, with a lower transmittance loss; thus, it effectively enhances the UV emission intensity.     

Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile

We report on the growth of thin, n-type, 4H-SiC epilayers on (0001) 4H-SiC substrates with uniform doping depth profile. The initial etching of the material before growth is studied to avoid affecting the starting material in the case of regrowth. Variation of the growth rate and its effect on nitrogen incorporation during the first few minutes of the growth have been studied using delta doped demarcation layers. Different growth conditions at the beginning of the growth have been tested in order to grow abrupt layers with a flat doping profile with a variation < ± 1%.     

Low temperature synthesis of single crystalline ZnO nanorods by oblique angle deposition

The authors report the growth of single crystalline ZnO nanorods by direct current magnetron sputtering in the oblique angle deposition configuration near room temperature. These isolated nanorods have a diameter of  40 nm, an inter-rod spacing of  20 nm, and a height of  100 nm. The nanorods show a (002) orientation along the rod-axis which is normal to the substrate. The low temperature fabrication of single crystal ZnO nanorods may find potential applications in optoelectronics and energy conversion devices.     

Selective growth of ZnO nanorods for gas sensors using ink-jet printing and hydrothermal processes

Selective growth of ZnO nanorod arrays with well-defined areas was developed to fabricate the NO₂ gas sensor. The seed solution was ink-jet printed on the interdigitated electrodes. Then, vertically aligned ZnO nanorods were grown on the patterned seed layer by the hydrothermal approach. The influences of seed-solution properties and the ink-jet printing parameters on the printing performance and the morphology of the nanorods were studied. Round micropattern (diameter: 650 μm) of ZnO nanorod arrays is demonstrated. The dimensions and positions of the nanorod arrays can be controlled by changing the printed seed pattern. The effects of nanorod structure and nanorod size on the gas-sensing capability of ZnO nanorod gas sensors were demonstrated. Due to the high surface-to-volume ratios of the nanorod-array structure, the ZnO nanorod gas sensor can respond to 750 ppb NO₂ at 100 °C. The sensors without baking treatment exhibit the typical response of a p-type semiconductor. However, only the response of n-type semiconductor oxides was observed after the annealing treatment at 150 °C for 2 h.     

Low-temperature growth and optical properties of Ce-doped ZnO nanorods

Ce-doped ZnO nanorod arrays were grown on zinc foils by a hydrothermal method at 180°C. The effects of Ce-doping on the structure and optical properties of ZnO nanorods were investigated in detail. The characterisation of the rod array with X-ray diffraction and X-ray photoelectron spectroscopy indicated that Ce³⁺ ions were incorporated into the ZnO lattices. There were no diffraction peaks of Ce or cerium oxide in the pattern. From UV-Vis spectra, we observed a red shift in the wavelength of absorption and decreased band gap due to the Ce ion incorporation in ZnO. The photoluminescence integrated intensity ratio of the UV emission to the deep-level green emission (I _UV/I _DLE) was 1.25 and 2.87, for ZnO and Ce-doped ZnO nanorods, respectively, which shows a great promise for the Ce-doped ZnO nanorods with applications in optoelectronic devices.