彩色显象管电子枪技术性能分析（Ⅱ）

彩色显象管电子枪技术性能分析（Ⅱ）北京牡丹电子集团公司胡瑞海４大屏幕电子枪关于大屏幕电子枪已在前面顺便介绍了几种（如单枪三束ＤＡＧ电子枪、ＸＬ和ＭＰＦ－ＬＯＬＦ型电子枪等），但目前由于大屏幕技术竞相发展，相适应的新型电子枪已成为开发大型管的技术关键。...     

从原子水平检测硅材料的技术出炉 有望研发出新型硅结构材料

据报道，美北卡罗莱纳州立大学科学家们研究出一种先进的方法，能从原子尺度分析出硅材料里的组合成分。这种技术增进了人们对原子结合形式的理解和控制，有望改善硅材料的结构性能，开发高效微晶片和新型设备。相关研究发表在美国《国家科学院院刊》（PNAS）网站上。     

镀膜机的射线及其防护

目前,用带有电子枪的镀膜机制造光学薄膜器件已得到广泛的应用,这是因为电流加热法所获得的温度受到蒸发源许多条件的限制,而且也很难避免蒸发源材料对蒸镀物质的污染,所以在使用蒸发熔点较高或性质较活泼的材料时,常用电子束加热,但是在使用电子束加热时会产生放射性辐射,在使用电子枪一段时间后,操作人员感到十分疲劳,白血球明显降低。因此,广大镀膜工作者对这一问题十分关心与重视,有必要把镀膜机所产生的射线情况、剂量大小、防护措施等问题搞清楚。为此本文力求在理论与实     

偏转电子枪原理与结构

一、概述 随着光学、电子等工业的迅速发展,电子束加热方法在真空镀膜技术中也得到了较快的发展和应用,这是因为电子束作为热源能获得远比电阻加热更大的能量密度,并可避免坩埚杂质对蒸发源的沾污。 产生电子束的装置称为电子枪,根据枪体结构不同,可分三种:直形(自加速式)电子枪、环形(静电式)电子枪和最近发展起来的偏转电子枪。三种电子枪的性能比较略见表1。     

蒸发台电子枪组件故障的检查与维修

分析了蒸发台电子枪组件故障的原因，从维修的角度重点讨论了电子枪组件故障检查和排除的方法。     

电子枪及其检查方法、评价方法、组装方法、生产管理系统与彩色显示管（2）

下面，关于用本发明电子枪的彩色显示管加以说明。图8（a）、（b）是用本发明电子枪的彩色显示管结构示意图。彩色显示管由上述电子枪61、玻屏62、玻锥63、管颈64和偏转线圈65构成。     

空间行波管用低蒸散M型阴极的蒸发性能与寿命特性

针对空间行波管等真空电子器件使用寿命受限于阴极电子源的问题，制备了低蒸散型覆膜扩散阴极(M型阴极)，对其蒸发性能、发射性能及寿命特性展开研究。采用贝克法测量阴极初始状态及经过不同寿命时长后的蒸发速率，在水冷阳极中进行了阴极发射性能的测试，随后比较了低蒸散M型阴极与常规M型阴极的性能差异。在专用测试系统中，以行波管电子枪漂移管为载体，对阴极的寿命特性进行测试与分析。研究结果表明，在1 050℃_B和1 100℃_B时，低蒸散M型阴极的蒸发速率与常规M型阴极相比分别降低了89.7%和84.8%，同时发射性能满足器件应用要求。寿命实验结果显示，在行波管电子枪短管中，实验阴极在980℃_B～1 140℃_B范围内，直流支取1.2 A/cm²的条件下，稳定工作10 000 h以上。阴极工作温度低于1041.5℃_B时预估寿命即可超过20年。     

彩色显象管电子枪技术性能分析（Ⅰ）

彩色显象管电子枪技术性能分析（Ⅰ）北京牡丹电子集团公司胡瑞海前言电子枪是电视机和各类监视器显象管（统称ＣＲＴ）的核心。从ＣＲＴ的发展与演变过程直到当前的日本索尼公司＂贵丽单枪＂、松下公司的＂三超画王＂与数字电视、ＨＤＴＶ所用宽屏幕（即宽高比为１６：９...     

双通道热丝法熔点仪的温度测控电路设计

在热丝法熔点仪的研制过程中，温度测控电路的设计是关键环节，针对传统的单热丝法熔点仪测温误差大、升温速度缓慢、恒温时温度稳定度差等缺点，根据PWM（脉宽调制）控制技术和数字PID控制算法原理，提出了一种基于双通道热丝法熔点仪的温度测控电路，实现了对双通道热丝法熔点仪的温度测控，给出了电路的设计与分析过程。实验结果表明：该电路的温度测控性能良好，提高了热丝法熔点仪的整体性能。     

高分辨率彩色CRT XF型电子枪的研究

一、前言随着计算机的普及,计算机辅助设计用显示终端的需求正在迅速扩展.计算机辅助设计用的超高分辨率彩色CRT,一直是用原来的三角形排列电子枪.用这种电子枪的CRT,由于需要采用会聚校正电路,因而具有成本高的缺点.为了降低成本,考虑用自会聚的直列式电子枪.当初它开发用于小型显象管,其后用于大型显象管,再进一步用于提高低、中分辨率显示管的性能.但是很难满足计算机辅助设计终端要求的聚焦性能和会聚性能.本文报导能满足计算机辅助设计所要求的聚焦性能和会聚性能的直列式电子枪,并命名为XF型(扩展场)电子枪.下面将论述这种电子枪的设计思想、三电极部分、主透镜部分、新阴极材料以及性能评价结果.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.