C60／花生酸混合LB膜Ⅱ.LB膜的表征和AFM形貌观察

用紫外可见吸收光谱（ＵＶ－ｖｉｓ）、Ｘ光电子能谱（ＸＰＳ）和原子力显微镜（ＡＦＭ）对Ｃ６０／ＡＡ混合ＬＢ膜中Ｃ６０分子在ＬＢ膜中的排列作了观察,进一步证明了我产在第一报中确认在混合ＬＢ膜中Ｃ６０分子不是顶在花生酸疏水部分的端头,而是嵌埋在花生酸分子之间。     

C60—AALB膜光学累识和记录效应的研究

Ｃ６０是碳的第三种同素异构体。本文将Ｃ６０和花生酸混合制得高质量的Ｃ６０－花生酸复合ＬＢ多层膜，在对其光学非线性特性的研究中首次发现这种ＬＢ膜具有光学累记和记录效应，采用布居光栅模型，分析了这种ＬＢ膜中的光学累积和记录效应的机制。     

端羟基PS—PEO嵌段共聚物LB膜的微摩擦性能

合成端闯劲基聚苯乙烯和聚环烷嵌段共聚物，并拉制ＬＢ膜，用原子力／摩擦力显微镜表征其表面微观形貌，研究其在极轻载荷下的摩擦性能。     

C60/花生酸混合LB膜Ⅲ.LB膜的酸、碱稳定性

用紫外可见吸收光谱(Uv-vis)、x光电子能谱(XPS)和原子力显微镜(AFM)对C60/AA混合LB膜中C60分子在LB膜中的排列作了观察,进一步证明了我们在第一报中确认的在混合LB膜中C60分子不是顶在花生酸疏水部分的端头,而是嵌埋在花生酸分子之间。     

C_(60)/花生酸混合LB膜Ⅱ.LB膜的表征和AFM形貌观察

用紫外可见吸收光谱 (UV -vis)、X光电子能谱(XPS)和原子力显微镜 (AFM)对C60 /AA混合LB膜中C60 分子在LB膜中的排列作了观察 ,进一步证明了我们在第一报中确认的在混合LB膜中C60 分子不是顶在花生酸疏水部分的端头 ,而是嵌埋在花生酸分子之间。     

C60／花生酸混合LB膜I.LB膜的X射线衍射和分子排列模型

制备了纯Ｃ６０和Ｃ６０／ＡＡ的混合ＬＢ膜。用Ｘ－射线衍射详细研究了它们的周期结构，表明Ｃ６０分子在Ｃ６０／ＡＡ混合ＬＢ膜中不是顶在花生酸疏水端头，而是包埋在花生酸分子之间，由此提出了一个新的分子排列模型。     

单层聚酰亚胺LB膜的STM成象

扫描隧道显微镜(STM)被用来表征聚酰亚胺LB膜的形貌及分子排列结构。本文介绍了单层聚酰亚胺LB膜样品制备过程,所用的STM系统及STM实验。给出了该LB膜亚胺化前后的STM图象。结果表明,所制备的LB膜的聚合链排列有序,测得链间距即横向周期～7(?),纵向上所谓的“之”字型结构的周期为11(?)。这些数值与根据分子面积在理论上所预估的结果相符。     

C_（60）－AALB膜光学三次非线性特性及机理的研究

本文将新发现的、具有很强的非线性光学效应的全碳有机材料Ｃ＿（６０）作为成膜单体制各成ＬＢ膜。对其三次非线性性质进行了研究。在Ｃ＿（６０）－ＡＡＬＢ膜的立体简并四波混频实验中实现多空前向相位共轭输出，采用相对测量法测得其三次极化率Ｘ￣（３）＝（１．８　　０．４）×１０￣（－８）ｅｓｕ．并对Ｃ＿（６０）－ＡＡＬＢ膜中的光学非线性机理进行分析。研究表明：ＬＢ膜中的三次非线性主要源于Ｃ＿（６０）的吸收效应，该效应产生的三次极化率与实验测试值具有同一量级。     

P(VDF-TrFE)铁电膜微观铁电压电特性研究

借助原子力显微镜优异的空间分辨能力和微观压电铁电测定技术,研究了不同结晶P(VDF-TrFE)铁电膜的微观铁电压电特性.研究表明,非晶态微观蝴蝶洄线的铁电开关过程平缓,矫顽场分布较广且场值较高;与之相比高结晶度薄膜微观蝴蝶洄线呈现陡峭而迅速的铁电开关现象,矫顽场单值且较低.微观压电性的实验表明非晶态压电系数约为-0.15(A)/V,低于晶态的压电系数-0.30(A)/V.     

C_（60）－AALB膜光学累积和记录效应的研究

Ｃ＿（６０）是碳的第三种同素异构体。本文将Ｃ＿（６０）和花生酸混合制得高质量的Ｃ＿（６０）－花生酸复合ＬＢ多层膜，在对其光学非线性特性的研究中首次发现这种ＬＢ膜具有光学累积和记录效应。采用布居光栅模型，分析了这种ＬＢ膜中的光学累积和记录效应的机制。     

C_(60)与高聚物复合膜的光电导性能(英文)

在 ITO导电玻璃上制备了聚乙烯基咔唑（ PVK） \C_(60)复合膜与分散红 I(PDRO)\C_(60)复合膜。 在 250W的红外灯照射下,发现 PDRO\C_(60)复合膜的光电导性能明显优于 PVK\C_(60)复合膜,并对 该现象作了初步解释。     

Spectroscopic properties of mixed Langmuir-Blodgett films of rhodamine dyes and poly(N,N-diallyl-N-octadecylamine-alt-maleic acid)

Langmuir-Blodgett (LB) films of poly(N,N-diallyl-N-octadecylamine-alt-maleic acid) as well as mixed films consisting of polyampholyte and two amphiphilic fluorophores - alkyl substituted rhodamine dyes - were prepared and investigated. The π-A isotherm of the polyampholyte at air-water interface is typical for monolayer in the liquid state. Mixed monolayers of polyampholyte and rhodamine amphiphiles show improved packing of the hydrophobic chains. Absorption and fluorescence spectroscopic studies of the mixed LB films reveal the aggregation of dyes in the densely packed multilayer films.     

C60和苯乙炔共聚物荧光性能研究

合成表征了Ｃ６０和苯乙炔共聚物。详细地测试了聚合物溶液的荧光性能。研究结果表明溶液浓度为０．５ｇ／Ｌ时,聚合物呈出现了荧光浓度自猝灭效应。对于Ｃ６０含量为５％的聚合物在３５０ｎｍ被激发时,荧光光谱除在４４０ｎｍ有一个聚苯乙炔的荧光发射峰之外,在４０４ｎｍ呈现出了一个新的弱荧光峰,聚合物中Ｃ６０对这个荧光具有猝灭效应,聚合物发光机制被分析。     

Fabrication and characterization of transparent MEH-PPV/n-GaN (0 0 0 1) heterojunction devices

n-GaN/MEH-PPV thin film heterojunction diode was fabricated by depositing MEH-PPV thin film using spin-coating process on n-GaN (0 0 0 1). The junction properties were evaluated by measuring I-V characteristics. I-V characteristics exhibited well defined rectifying behavior with a barrier height of 0.89 eV and ideality factor of 1.7. The optical band gap of the MEH-PPV film using optical absorption method was found to be 2.2 eV and the fundamental absorption edge in the film is formed by the direct allowed transitions. At higher electric fields, the conductivity mechanism of the film shows a trap charge limited current mechanism. The obtained results indicate that the electronic parameters of the heterojunction diode are affected by properties of MEH-PPV organic film.     

Ag and O ion irradiation induced improvement in dielectric properties of the Ba(Co1/3Nb2/3)O3 thin films

We present the preliminary results of temperature and frequency dependent dielectric measurements on Ba(Co_1/3Nb_2/3)O₃ (BCN) thin films. These films were prepared on indium tin oxide (ITO) coated glass substrates by the pulse laser deposition (PLD) technique. It exhibits single-phase hexagonal symmetry. These films were irradiated with Ag¹⁵⁺ (200 MeV) and O⁷⁺ (100 MeV) beams at the fluence 1 × 10¹¹, 1 × 10¹², and 1 × 10¹³ ions/cm². On irradiating these films, its dielectric constant (?′) and dielectric loss (tan δ) parameters improve compared to un-irradiated film. Compared to O⁷⁺ irradiation induced point/cluster defects Ag¹⁵⁺ induced columnar defects are more effective in reducing/pinning trapped charges within grains. The present paper highlights the role of swift heavy ion irradiation in engineering the dielectric properties of conductive samples to enable them to be useful for microwave device applications.     

纳米C60/C70-丙烯酸(酯) 共聚物的合成及性能

将纳米C60／C70与丙烯酸(酯)单体在引发剂作用下共聚，合成得到C60／C70-丙烯酸(酯)共聚物。对该共聚物的结构进行了红外光谱和荧光光谱分析，探讨了有富勒烯参与的聚合反应机理和共聚物结构。将该共聚物用有机胺中和成盐，使其水性化，制得水溶性纳米C60／C70-丙烯酸(酯)高分子成膜材料，对其成膜性能进行了分析测试。发现C60／C70对丙烯酸(酯)聚合物具有独特的成膜改性功能。     

Microstructural and transport properties of LaNiO3−δ films grown on Si (111) by chemical solution deposition

Electrically conductive LaNiO_3−δ (LNO) thin films with typical thickness of 200 nm were deposited on Si (111) substrates by a chemical solution deposition method and heat-treated in air at 700 °C. Structural, morphological, and electrical properties of the LNO thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field-emission scanning electron microscopy (FEG-SEM), and electrical resistivity ρ(T). The thin films have a very flat surface and no droplet was found on their surfaces. The average grain size observed by AFM and FEG-SEM was approximately 100 nm in excellent agreement with XRD data. The ρ(T) data showed that these thin films display a good metallic character in a large range of temperature. These results suggest the use of this conductive layer as electrode in the integration of microelectronic devices.