Study on properties of CaO-SiO2-B2O3 system glass-ceramic

Low temperature co-fired ceramic (LTCC) is prepared by sintering a glass selected from CaO-SiO₂-B₂O₃ system, and its sintered bodies are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). It is found that the optimal sintering temperature for this glass-ceramic is 820 °C for 15 min, and the major phases of this material are CaSiO₃, CaB₂O₄ and SiO₂. The glass-ceramic possesses excellent dielectric properties: ?_r = 6.5, tan δ < 2 × 10⁻³ at 10 MHz, temperature coefficient of dielectric constant about −51 × 10⁻⁶ °C⁻¹ and coefficient of thermal expansion about 8 × 10⁻⁶ °C⁻¹ at 20-400 °C. Thus, this material is supposed to be suitable for the tape casting process and be compatible with Ag electrode, which could be used as the LTCC materials for the application in wireless communications.     

Preparation and properties of negative thermal expansion Zr2WP2O12 ceramics

Using solid-state reaction method, Zr₂WP₂O₁₂ powder was synthesized for this study. The optimum heating condition was 1200 °C for 4 h. The obtained powder was compacted and sintered. The relative density of the Zr₂WP₂O₁₂ ceramics with no sintering additive was 60%. That of samples sintered with more than 0.5 mass% MgO was about 97%. The average grain size (D₅₀), as estimated from the polished surface of a sample sintered at 1200 °C for 4 h was about 1 μm. The obtained ceramics showed a negative thermal expansion coefficient of about −3.4 × 10⁻⁶ °C⁻¹. Young's modulus, Poisson's ratio, three-point bending strength, Vickers microhardness, and fracture toughness of the obtained ceramics were, respectively, 74 GPa, 0.25, 113 ± 13 MPa, 4.4 GPa and 2.3 MPa m^1/2.     

Microwave dielectric properties and microstructures of the 11Li2O-3Nb2O5-12TiO2 ceramics with B2O3 addition

The effects of B₂O₃ addition, as a sintering agent, on the sintering behavior, microstructure and microwave dielectric properties of the 11Li₂O-3Nb₂O₅-12TiO₂ (LNT) ceramics have been investigated. With the low-level doping of B₂O₃ (≤2 wt.%), the sintering temperature of the LNT ceramic could be effectively reduced to 900 °C. The B₂O₃-doped LNT ceramics are also composed of Li₂TiO₃ss and “M-phase” phases. No other phase could be observed in the 0.5-2 wt.% B₂O₃-doped ceramics sintered at 840-920 °C. The addition of B₂O₃ induced no obvious degradation in the microwave dielectric properties but increased the τ_f values. Typically, the 0.5 wt.% B₂O₃-doped ceramics sintered at 900 °C have better microwave dielectric properties of ?_r = 49.2, Q × f = 8839 GHz, τ_f = 57.6 ppm/°C, which suggest that the ceramics could be applied in multilayer microwave devices requiring low sintering temperatures.     

Study on properties of BaxSmyTi7O20 ceramics with CaO-SiO2-B2O3 glass

The effect of CaO-SiO₂-B₂O₃ (CSB) glass addition on the sintering temperature and dielectric properties of Ba_xSm_yTi₇O₂₀ ceramics has been investigated using X-ray diffraction, scanning electron microscopy and differential thermal analysis. The CSB glass starts to melt at about 970 °C, and a small amount of CSB glass addition to Ba_xSm_yTi₇O₂₀ ceramics can greatly decrease the sintering temperature from about 1350 to about 1260 °C, which is attributed to the formation of liquid phase. It is found that the dielectric properties of Ba_xSm_yTi₇O₂₀ ceramics are dependent on the amount of CSB glass and the microstructures of sintered samples. The product with 5 wt% CSB glass sintered at 1260 °C is optimal in these samples based on the microstructure and the properties of sintering product, when the major phases of this material are BaSm₂Ti₄O₁₂ and BaTi₄O₉. The material possesses excellent dielectric properties: ?_r = 61, tan δ = 1.5 × 10⁻⁴ at 10 GHz, temperature coefficient of dielectric constant is −75 × 10⁻⁶ °C⁻¹.     

Effect of B2O3-Bi2O3-SiO2-ZnO glass on the sintering and microwave dielectric properties of 0.83ZnAl2O4-0.17TiO2

The 0.83ZnAl₂O₄-0.17TiO₂ (ZAT) ceramics were synthesized by solid state ceramic route. The effect of 27B₂O₃-35Bi₂O₃-6SiO₂-32ZnO (BBSZ) glass on the microwave dielectric properties of ZAT was investigated. The crystal structure and the microstructure of the ceramic-glass composites were studied by X-ray diffraction and scanning electron microscopic techniques. The low frequency dielectric loss was measured at 1 MHz. The dielectric properties of the sintered samples were measured in the microwave frequency range by the resonance method. Addition of 0.2 wt% of BBSZ improved the dielectric properties with quality factor (Q_u × f) > 120,000 GHz, temperature coefficient of resonant frequency (τ_f) = −7.3 ppm/°C and dielectric constant (?_r) = 11.7. Addition of 10 wt% of BBSZ lowered the sintering temperature to about 950 °C with Q_u × f > 10,000 GHz, ?_r = 10 and τ_f = −23 ppm/°C. The reactivity of 10 wt% BBSZ added ZAT with silver was also studied. The results show that ZAT doped with suitable amount of BBSZ glass is a possible material for low-temperature co-fired ceramic (LTCC) application.     

Synthesis of BaTi4O9 ceramics by reaction-sintering process

Synthesis of BaTi₄O₉ ceramics by a reaction-sintering process was investigated. The mixture of raw materials for stoichiometric BaTi₄O₉ were pressed and sintered into ceramics without any calcination stage involved. Pure BaTi₄O₉ phases were obtained at 1150-1280 °C. High-sintered density, 98.2-99.5% of theoretical value (4.533 g/cm³), can be obtained for pellets sintered at 1200-1280 °C for 2-6 h. Some rod-shaped grains 3-7 μm in the longitudinal axis appear in pellets sintered at 1230 °C. Both the size and the amount of these rod-shaped grains increase at higher sintering temperature.     

Synthesis of Tb3Al5O12 (TAG) transparent ceramics for potential magneto-optical applications

Tb₃Al₅O₁₂ transparent ceramics have been prepared by solid state reaction and vacuum sintering. The optical quality and the microstructure of the samples were investigated. The sample sintered at 1650 °C possessed relatively good optical transparency from 400 nm to 1600 nm. The Verdet constant measured at 632.8 nm of the quasi-pore-free Tb₃Al₅O₁₂ transparent ceramic was −172.72 rad T⁻¹ m⁻¹, which was close to the counterpart of Tb₃Al₅O₁₂ single crystal. The thermal conductivity of the sample was also measured. To the best of our knowledge, this is the first time that Tb₃Al₅O₁₂ transparent ceramic with relatively good optical quality and magneto-optical property has been reported.     

Microstructure and electrical properties of Sm2O3 doped Bi2O3-based ZnO varistor ceramics

The dependence of the bulk density, microstructure and dc electrical properties of bismuth oxide (Bi₂O₃)-based zinc oxide (ZnO) varistor ceramics for various samarium oxide (Sm₂O₃) contents was investigated. The value of bulk density was found to 5.43-5.50 g cm⁻³ with Sm₂O₃ (mol%) content. The maximum value of bulk density is observed to be 5.50 for 0.30 mol% Sm₂O₃ containing varistor ceramics. The grain sizes for all the samples calculated from the scanning electron micrographs were found to decrease as Sm₂O₃ increases. The presence of ZnO phases, Bi-rich phases, spinel phases and Sm₂O₃ phases were observed in the samples by the energy dispersive X-ray analysis and X-ray diffraction analysis. As the Sm₂O₃ amount increased in the Bi₂O₃-based ZnO varistor ceramics, the nonlinear coefficient, α increased up to 0.10 mol%, reaching a maximum value of 58 and then decreased. The breakdown electric field, E_b, increased with the increase of Sm₂O₃ content with a maximum value of 3220 V cm⁻¹ for the 0.75 mol% Sm₂O₃ doped ZnO varistor ceramics. The leakage current, I_L, showed a minimum value of 1.10 μA for the composition of 0.30 mol% Sm₂O₃ doped Bi₂O₃-based ZnO varistor ceramics. The 0.30 mol% Sm₂O₃-doped Bi₂O₃-based ZnO varistor ceramics sintered at 1200 °C exhibited a good stability for dc accelerated aging stress of 0.90 V_1 mA/90 °C/12 h.     

Pressureless sintering of negative thermal expansion ZrW2O8/Zr2WP2O12 composites

Negative thermal expansion material ZrW₂O₈/Zr₂WP₂O₁₂ composite was prepared by liquid phase sintering. The apparent density of ZrW₂O₈ without any sintering additive was about 3.7 g/cm³, corresponding to about 73% of its theoretical density. However, the relative density of the samples, sintered with more than 5 mol% P₂O₅ was about 90%. The identified phases were mainly ZrW₂O₈ with small amounts of WO₃, ZrO₂ and Zr₂WP₂O₁₂ by XRD. The intensity of Zr₂WP₂O₁₂ peaks increased with increasing P₂O₅ content. It was surmised that the melting of ZrO₂-P₂O₅ resulted in liquid phase formation, which is then converted to Zr₂WP₂O₁₂ on the final stage of sintering. Therefore, Zr₂WP₂O₁₂ phase was observed at the gap between the ZrW₂O₈ grains and at the triple junctions. The ceramics sintered with 20 mol% P₂O₅ showed a negative thermal expansion coefficient of − 4.0 × 10^− 6 °C^− 1.     

Effect of sintering process on the microstructures of Bi2O3-doped yttria stabilized zirconia

Variations of microstructures in Bi₂O₃-doped yttria stabilized zirconia (YSZ) with conventional furnace and microwave sintering were investigated in this work. The results demonstrated that a small amount of addition of Bi₂O₃ was effective in reducing the sintering temperature of YSZ from 1500 °C to 1200 °C and promoting the densification rate of the ceramics. It is interesting that microwave sintering is found to suppress the evaporation rate of Bi₂O₃ and formation of the monoclinic-ZrO₂ or other amorphous phases. Compared to conventional furnace sintering, significant improvement in density of Bi₂O₃-doped YSZ at lower sintering temperatures with microwave sintering was observed. Rapid heating rate and short sintering time for restricting serious segregation at grain boundary were observed as well. Employing microwave sintering at the same sintered condition, the density of a specimen was evidently increased by 4.59% in comparison to the specimen sintered with a conventional furnace sintering.     

Effects of Cr2O3 doping on the electrical properties and the temperature stabilities of PNW-PMN-PZT ceramics

The ceramics with 0.90Pb(Zr_0.50Ti_0.50)O₃-0.07Pb(Mn_1/3Nb_2/3)O₃-0.03Pb(Ni_1/2W_1/2)O₃ were prepared by adding Cr₂O₃. The effects of Cr₂O₃ doping on the phase structure, the microstructure and the electrical properties of ceramics were investigated. Meanwhile, the temperature stabilities of the resonant frequency (f_r) and the electromechanical coupling factor (K_p) were studied. The results showed that the better temperature stability could be obtained at x = 0.2 wt.% when the calcining temperature was 800 °C and the sintering temperature was 1150 °C. The parameters were Δf_r/f_r25 °C = −0.17% and ΔK_p/K_p25 °C = −1.39%. Moreover, the optimized electrical properties were also achieved, which were K_P = 0.54, Q_m = 1730, d₃₃ = 330 pC/N, ?_r = 2078 and tan δ = 0.0052. The optimized properties make the ceramics with this composition to be a good candidate for high power piezoelectric transformers applications.     

Low temperature sintering and microwave dielectric properties of ZnTiNb2O8 ceramics with BaCu(B2O5) additions

The phases, microstructure and microwave dielectric properties of ZnTiNb₂O₈ ceramics with BaCu(B₂O₅) additions prepared by solid-state reaction method have been investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The pure ZnTiNb₂O₈ ceramic shows a high sintering temperature of about 1250 °C. However, it was found that the addition of BaCu(B₂O₅) lowered the sintering temperature of ZnTiNb₂O₈ ceramics from above 1250 °C to 950 °C due to the BCB liquid-phase. The results showed that the microwave dielectric properties were strongly dependent on densification, crystalline phases and grain size. Addition of 3 wt% BCB in ZnTiNb₂O₈ ceramics sintered at 950 °C afforded excellent dielectric properties of ?_r = 32.56, Q × f = 20,100 GHz (f = 5.128 GHz) and τ_f = −64.87 ppm/°C. These represent very promising candidates for LTCC dielectric materials.     

Improved high-Q microwave dielectric resonator using CuO-doped MgNb2O6 ceramics

The microwave dielectric properties and the microstructures of MgNb₂O₆ ceramics with CuO additions (1-4 wt.%) prepared with conventional solid-state route have been investigated. The sintered samples exhibit excellent microwave dielectric properties, which depend upon the liquid phase and the sintering temperature. It is found that MgNb₂O₆ ceramics can be sintered at 1140 °C due to the liquid phase effect of CuO addition. At 1170 °C, MgNb₂O₆ ceramics with 2 wt.% CuO addition possesses a dielectric constant (ε_r) of 19.9, a Q×f value of 110,000 (at 10 GHz) and a temperature coefficient of resonant frequency (τ_f) of −44 ppm/°C. The CuO-doped MgNb₂O₆ ceramics can find applications in microwave devices requiring low sintering temperature.     

Low permittivity SrCuSi4O10-LMZBS glass composite for LTCC applications

The tetragonal gillespite type SrCuSi₄O₁₀ (SCS) was prepared by the conventional solid-state ceramic route. The SCS sintered at 1100 °C/6 h showed ε_r = 4.0 and tan δ = 1.1 × 10⁻³ at 5 GHz. The SCS has poor sinterability and the addition of lithium magnesium zinc borosilicate glass (20: Li₂O, 20: MgO, 20: ZnO, 20: B₂O₃, 20: SiO₂) lowered the sintering temperature and improved densification. The SCS ceramic with 5 wt.% LMZBS glass sintered at 900 °C has ε_r = 5.0 and tan δ = 1.9 × 10⁻³ at 5 GHz. The composite is chemically compatible with the common electrode material silver.     

Nonlinear current-voltage properties and accelerated aging behavior of ZPCCL-based varistors with sintering temperature

The nonlinear electrical properties and accelerated aging behavior of the varistors, which are composed of ZnO-Pr₆O₁₁-CoO-Cr₂O₃-La₂O₃ (ZPCCL)-based ceramics, were investigated for different sintering temperatures. The increase of sintering temperature led to more densified ceramics, whereas it decreased the nonlinear properties and varistor voltage. The highest nonlinearity of varistors was obtained from sintering temperature of 1240 °C, in which the nonlinear coefficient is 79.4 and the leakage current is 0.3 μA. However, the highest stability of varistors was obtained from sintering temperature of 1260 °C, in which the %ΔV_1 mA is + 1.9%, the %Δα is − 10.6%, and the %ΔI_L is + 20% for stress state of 95 V_1 mA/150 °C/24 h.     

Influence of Bi2O3 and CuO addition on low-temperature sintering and dielectric properties of Ba0.6Sr0.4TiO3 ceramics

In this study, we tried to lower the sintering temperature of Ba_0.6Sr_0.4TiO₃ (BST) ceramics by several kinds of adding methods of Bi₂O₃, CuO and CuBi₂O₄ additives. The effects of different adding methods on the microstructures and the dielectric properties of BST ceramics have been studied. In the all additive systems, the single addition of CuBi₂O₄ was the most effective way for lowering the sintering temperature of BST. When CuBi₂O₄ of 0.6 mol% was mixed with starting BST powders and sintered at 1100 °C, the derived ceramics demonstrated dense microstructure with a low dielectric constant (? = 4240), low dielectric loss (tan δ = 0.0058), high tunability (Tun = 38.3%) and high Q value (Q = 251). It was noteworthy that the sintering temperature was significantly lowered by 350 °C compared with no-additive system, and the derived ceramics maintained the excellent microwave dielectric properties corresponding to pure BST.     

Effects of Fe2O3 doping on the microstructure and piezoelectric properties of 0.55Pb(Ni1/3Nb2/3)O3-0.45Pb(Zr0.3Ti0.7)O3 ceramics

0.55Pb(Ni_1/3Nb_2/3)O₃-0.45Pb(Zr_0.3Ti_0.7)O₃(PNN-PZT) ceramics with different concentration of xFe₂O₃ doping (where x = 0.0, 0.8, 1.2, 1.6 mol%) were synthesized by the conventional solid state sintering technique. X-ray diffraction analysis reveals that all specimens are a pure perovskite phase without pyrochlore phase. The density and grain size of Fe-doped ceramics tend to increase slightly with increasing concentration of Fe₂O₃. Comparing with the undoped ceramics, the piezoelectric, ferroelectric and dielectric properties of the Fe-doped PNN-PZT specimens are significantly improved. Properties of the piezoelectric constant as high as d₃₃ ~ 956 pC/N, the electromechanical coupling factor k_p ~ 0.74, and the dielectric constant ε_r ~ 6095 are achieved for the specimen with 1.2 mol% Fe₂O₃ doping sintered at 1200 °C for 2 h.     

Dielectric and pyroelectric anisotropy in melt-quenched BaBi2(Nb1 − xVx)2O9 ceramics

The (0 0 l) textured BaBi₂(Nb_1 − xV_x)₂O₉ (where x = 0, 0.03, 0.07, 0.1 and 0.13) ceramics were fabricated via the conventional melt-quenching technique followed by high temperature heat-treatment (800-1000 °C range). The influence of vanadium content and sintering temperature on the texture development and relative density were investigated. The samples corresponding to the composition x = 0.1 sintered at 1000 °C for 10 h exhibited the maximum orientation of about 67%. The Scanning electron microscopic studies revealed the presence of platy grains having the a-b planes perpendicular the pressing axis. The dielectric constant and the pyroelectric co-efficient values in the direction perpendicular to the pressing axis were higher. The anisotropy in the dielectric constant is about 100 (at 100 kHz) at the dielectric maximum temperature and anisotropy in the pyroelectric co-efficient is about 50 μC cm⁻² °C⁻¹ in the vicinity of pyroelectric anomaly for the sample corresponding to the composition x = 0.1 sintered at 1000 °C. Higher values of the dielectric loss and electrical conductivity were observed in the direction perpendicular to the pressing axis which is attributed to the high oxygen ion conduction in the a-b planes.     

Effect of the sintering temperature on the properties of Ce0.85La0.10Ca0.05O2−δ electrolyte material

Rare earth and alkaline earth co-doped Ce_0.85La_0.10Ca_0.05O_2−δ electrolyte material with the powder obtained by solid-state reaction method was sintered at 1300, 1400, 1500 and 1600 °C respectively. The results showed that the ionic conductivity of the sample sintered at 1400 °C was slightly lower compared to that sintered at 1500 °C in the temperature range of 300-550 °C, while the sample sintered at 1400 °C showed the highest ionic conductivity in all the samples above 550 °C. The ionic conductivity of ∼0.021 S/cm at 600 °C and the relative density of 98.2% were observed for the sample sintered at 1400 °C. In addition, the highest flexural strength with 145 MPa was also obtained for the sample sintered at 1400 °C. It suggested that the sintering temperature for Ce_0.85La_0.10Ca_0.05O_2−δ electrolyte may be reduced to as low as 1400 °C with desired properties.     

Reaction sintering fabrication of (AlN, TiN)-Al2O3 composite

The (AlN, TiN)-Al₂O₃ composites were fabricated by reaction sintering powder mixtures containing 10-30 wt.% (Al, Ti)-Al₂O₃ at 1420-1520°C in nitrogen. It was found that the densification and mechanical properties of the sintered composites depended strongly on the Al, Ti contents of the starting powder and hot pressing parameters. Reaction sintering 20 wt.% (Al, Ti)-Al₂O₃ powder in nitrogen in 1520°C for 30 min yields (AlN, TiN)-Al₂O₃ composites with the best mechanical properties, with a hardness HRA of 94.1, bending strength of 687 MPa, and fracture toughness of 6.5 MPa m^1/2. Microstructure analysis indicated that TiN is present as well dispersed particulates within a matrix of Al₂O₃. The AlN identified by XRD was not directly observed, but probably resides at the Al₂O₃ grain boundary. The fracture mode of these composites was observed to be transgranular.