WPT中高效E类功率放大器的研究

作为无线电能传输(WPT)系统的核心部件之一,E类功率放大器的理论效率可达100%,具有很好的研究前景。本文对E类功率放大器进行理论分析与设计建模,运用电磁仿真软件ADS进行仿真,通过源牵引和负载牵引进行最佳阻抗匹配以优化效率,基于仿真结果进行了硬件电路设计制作。结果表明,设计制作的E类功放在27~29MHz输出的最大功率附加效率(PAE)为91.3%,同时获得17.5 d B的功率增益,验证了设计的正确性与可行性。     

A 1.9-GHz, 1-W CMOS class-E power amplifier for wirelesscommunications

This paper presents a 1-W, class-E power amplifier that is implemented in a 0.35-μm CMOS technology and suitable for operations up to 2 GHz. The concept of mode locking is used in the design, in which the amplifier acts as an oscillator whose output is forced to run at the input frequency. A compact off-chip microstrip balun is also proposed for output differential-to-single-ended conversion. At 2-V supply and at 1.98 GHz, the power amplifier achieves 48% power-added efficiency (41% combined with the balun)     

Broadband GaN HEMT push-pull microwave power amplifier

We report a broadband, linear, push-pull amplifier that utilizes GaN-based HEMTs grown on SiC substrates. The high power density capabilities of these devices can be enhanced by the high efficiency achievable with push-pull operation. Good amplifier performance is facilitated by use of a new low-loss balun that is implemented with three symmetric coupled lines and which showed insertion loss of less than 0.5 dB per balun. The bias was injected through the baluns, thereby simplifying the amplifier design and reducing loss associated with dc decoupling capacitors. Using two 1.5 mm HEMTs with 0.35-μm gate length, a push-pull amplifier produced a small-signal gain of 8 dB at 5 GH2, a 3 dB bandwidth of 3.5-10.5 GHz, and a PAE of 25%     

A 44 GHz HEMT amplifier

A 44-GHz amplifier using 0.25-μm gate length and double-heterojunction structure HEMT devices is described. Higher gain and power performance have been obtained from the amplifier using this device at millimeter-wave frequencies. A spot gain of 9.4 dB and a 1-dB gain compression point of +7.5 dBm has been achieved at 43.5 GHz.     

Two-stage quasi-class-E power amplifier in GaN HEMT technology

This letter presents a two-stage quasi-class-E monolithic microwave integrated circuit power amplifier at 2.0GHz, which is based on field-plated GaN high electron mobility transistor technology. It consists of a driver stage and a power stage. The circuit schematic is described. The amplifier achieves an output power of 37.5dBm into a 50-/spl Omega/ load, a power added efficiency (PAE) of 50%, and a gain of 18.2dB. A power density of 5.6W/mm is achieved.     

一个Ku波段高功率密度AlGaN/GaN HEMTs单片集成功率放大器

本文报道了一款工作于Ku波段的高功率密度单片集成功率放大器。该放大器采用金属有机化学气相淀积技术在2英寸半绝缘 4H-SiC衬底上生长0.2um AlGaN/GaN HEMTs工艺制作而成。在10%占空比的脉冲偏置Vds=25V,Vgs=-4V条件下,该单片放大器在12-14GHz频率范围内得到最大输出功率38dBm(6.3W),最高PAE 24.2%和线性增益6.4到7.5dB。以这种功率水平而论,该放大器的功率密度超过5W/mm。     

A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier

A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating（SI） 4H-SiC substrate by MOCVD. Over the 12-14 GHz frequency range,the single chip amplifier demonstrates a maximum power of 38 dBm（6.3 W）, a peak power added efficiency（PAE） of 24.2%and linear gain of 6.4 to 7.5 dB under a 10%duty pulse condition when operated at V_ds = 25 V and V_gs = -4 V.At these power levels,the amplifier exhibits a power density in excess of 5 W/mm.     

HEMT 60 GHz amplifier

A high electron mobility transistor (HEMT) amplifier has been fabricated which exhibits 7.5 dB gain at 61 GHz. This result was obtained with a quarter-micrometre gate-length depletion-mode HEMT. Reduction of source-gate resistance and gate length are primarily responsible for this performance. The letter describes the materials and device processing technology developed for fabricating these devices.     

基于氮化镓特征的高效功率放大器拓扑设计

基于对功率三极管实际输出端特性的考虑,提出一种易实现的高效率功放拓扑结构,并通过负载控制理论进行更贴合实际的理论分析。基于CREE公司GaN HEMT CGH40010仿真,在输入为25 dBm,偏置为28 V,带宽在2.98 GHz~3.02 GHz时,输出功率高于38.5 dBm,功率附加效率优于70%,并且在3 GHz时功率附加效率达到73.4%。在15 V~30 V的偏置范围内,漏极效率达到70%以上,仿真结果很好地验证了拓扑的可行性。     

基于GaN HEMT的Doherty功率放大器设计

设计一款基于GaN HEMT的S波段Doherty功率放大器(DPA)。主放大器是采用GaN HEMT设计的AB类功放,辅助放大器是GaN HEMT的C类功放。利用ADS对电路进行仿真,单音测试结果表明,DPA工作频率在2.3~2.4 GHz,输入功率为29 dBm时,工作增益不小于14 dB,输出功率大于43 dBm,功率附加效率超过65%。分析了辅助放大器偏置电压对DPA性能的影响,偏置电压变小,DPA的效率和线性度较好。     

A high efficiency GaAs MCM power amplifier for 1.9 GHz digitalcordless telephones

A GaAs MCM power amplifier has been developed for 1.9-GHz digital cordless telephones. Power-added efficiency of 40.2% and P_1dB of 22.2 dBm have been obtained at drain supply voltage of 3.6 V. Adoption of the multilayer MCM structure, i.e., multilayer microwave integrated circuits (MuMIC), and on-chip ferroelectric capacitors successfully reduced the GaAs total chip area to be 1.1 mm². We consider that the MuMIC is the most effective candidate for high frequency circuits     

A 20 mW, 150 GHz InP HEMT MMIC power amplifier module

This paper describes a power amplifier (PA) module containing an InP high electron mobility transistor (HEMT) monolithic millimeter-wave integrated circuit (MMIC) amplifier chip, designed, and packaged at the Jet Propulsion Laboratory, and fabricated at HRL Laboratories. The module features 20 mW of output power at 150 GHz, with more than 10 mW available in the 148-160 GHz frequency range.     

一个8GHz高功率AlGaN/GaN HEMT VCO

基于中科院微电子所的AlGaN/GaN HEMT工艺研制了一个X波段高功率混合集成压控振荡器（VCO）。电路采用源端调谐的负阻型结构,主谐振腔由开路微带和短路微带并联构成,实现高Q值设计。在偏置条件为VD=20V, VG=-1.9V, ID=150mA时,VCO在中心频率8.15 GHz处输出功率达到28 dBm,效率21%,相位噪声-85 dBc/Hz@100 KHz,-128 dBc/Hz@1 MHz。调谐电压0~5V时,调谐范围50 MHz。分析了器件闪烁噪声对GaN HEMT基振荡器相位噪声性能的主导作用。测试结果显示了AlGaN/GaN HEMT工艺在高功率低噪声微波频率源中的应用前景。     

An 8 GHz high power AlGaN/GaN HEMT VCO

A high power X-band hybrid microwave integrated voltage controlled oscillator(VCO) based on Al-GaN /GaN HEMT is presented.The oscillator design utilizes a common-gate negative resistance structure with open and short-circuit stub microstrip lines as the main resonator for a high Q factor.The VCO operating at 20 V drain bias and-1.9 V gate bias exhibits an output power of 28 dBm at the center frequency of 8.15 GHz with an efficiency of 21%.Phase noise is estimated to be -85 dBc/Hz at 100 kHz offset and -1...     

A class-E power amplifier for wireless biomedical systems

This letter presents the design, implementation and experimental results of a class-E power amplifier (PA) suitable for wireless biomedical sensor nodes (WBSNs) integrated into a wireless body area network (WBAN). A self-biased inverter is used as a preamplifier stage to provide a 50 %-duty-cycle square wave to drive the class-E PA. The design (PA with the preamplifier), which is fabricated in a 0.18-μm CMOS technology, achieves 40.2 % drain efficiency while output power is 14.7 dBm at 433 MHz under 1.2-V supply, as demonstrated by the experimental results.     

A C-band high-dynamic range GaN HEMT low-noise amplifier

A C-band low-noise amplifier (LNA) is designed and fabricated using GAN HEMT power devices. The one-stage amplifier has a measured noise figure of 1.6 dB at 6 GHz, with an associated gain of 10.9 dB and IIP3 of 13 dBm. it also exhibits broadband operation from 4-8 GHz with noise figure less than 1.9 dB. The circuit can endure up to 31 dBm power from the input port. Compared to circuits based on other material and technology, the circuit shows comparable noise figure with improved dynamic range and survivability.     

A cascode modulated class-E power amplifier for wireless communications

A cascode modulated CMOS class-E power amplifier (PA) is presented in this paper. It is shown that by applying a modulated signal to the gate of the cascode transistor the output power is modulated. The main advantage of the proposed technique is a high 35 dB output power dynamic range. The peak power added efficiency (PAE) is 35%. The concept of the cascode power control of class-E RF PA operating at 2.2 GHz with 18 dBm output power was implemented in a CMOS technology and the performance has been verified by measurements. The prototype CMOS PA is tested by single tone excitation and by enhanced data rates for GSM evolution (EDGE) modulated signal. Digital predistortion is used to linearize the transfer characteristic. The EDGE spectrum mask is met and the rms error vector magnitude (EVM) is less than 4° in the entire output power range.     

单片式S波段的宽带E类功放设计

许多商业和国防系统应用都需要高效率的微波和射频功率放大器。这些应用包括无线LAN、蜂窝电话、通信系统和先进的机载有源相控阵雷达系统。技术选择、设计方法和制造周期时间是这些系统的主要成本。简单和精确的设计可成功地实现开关方式的S波段E类高效率功率放大器。E类放大器设计是基于采用一个串联或并联的谐振负载网络。在有源器件输出端获得最佳化,使器件的DC功率耗散最小。有源器件作为一个开头由RF输入信号驱动至导通和关断状态。开关晶体管(D、E、F类)的理想AC负载线如图1(B)所示。可见工作点沿着Vds和I ds轴的移动,亦即器…     

基于GaN HEMT新型负反馈结构固态宽带功率放大器的研究

The design and fabrication of an ultra-broadband power amplifier based on a Ga N HEMT, which operates in the frequency range from 3 to 8 GHz, is presented in this paper. A TGF2023-02 Ga N HEMT chip from Tri Quint is adopted and modeled. A novel negative feedback structure is applied in the circuit. The measured results show that the amplifier module has a wide range frequency response that is almost consistent with those of simulation at frequencies from 3 to 6.5 GHz. The measured power gain is greater than 7 d B between 3 and 6.5 GHz.The saturated output power is 38.5 d Bm under DC bias of Vds D28 V, Vgs D 3:5 V at the frequency of 5.5 GHz.