Wafer-scale fabrication of polymer-based microdevices via injection molding and photolithographic micropatterning protocols

Because of their broad applications in biomedical analysis, integrated, polymer-based microdevices incorporating micropatterned metallic and insulating layers are significant in contemporary research. In this study, micropatterns for temperature sensing and microelectrode sets for electroanalysis have been implemented on an injection-molded thin polymer membrane by employing conventional semiconductor processing techniques (i.e., standard photolithographic methods). Cyclic olefin copolymer (COC) is chosen as the polymer substrate because of its high chemical and thermal stability. A COC 5-in. wafer (1-mm thickness) is manufactured using an injection molding method, in which polymer membranes (approximately 130 microm thick and 3 mm x 6 mm in area) are implemented simultaneously in order to reduce local thermal mass around micropatterned heaters and temperature sensors. The highly polished surface (approximately 4 nm within 40 microm x 40 microm area) of the fabricated COC wafer as well as its good resistance to typical process chemicals makes it possible to use the standard photolithographic and etching protocols on the COC wafer. Gold micropatterns with a minimum 5-microm line width are fabricated for making microheaters, temperature sensors, and microelectrodes. An insulating layer of aluminum oxide (Al2O3) is prepared at a COC-endurable low temperature (approximately 120 degrees C) by using atomic layer deposition and micropatterning for the electrode contacts. The fabricated microdevice for heating and temperature sensing shows improved performance of thermal isolation, and microelectrodes display good electrochemical performances for electrochemical sensors. Thus, this novel 5-in. wafer-level microfabrication method is a simple and cost-effective protocol to prepare polymer substrate and demonstrates good potential for application to highly integrated and miniaturized biomedical devices.     

The Future of Microelectromechanical systems (MEMS)

Abstract:  MEMS-based products produced in 2005 had a value of $8bn, 40% of which was sensors. The balance was for products that included micromachined features, such as ink jet print heads, catheters and RF IC chips with embedded inductors. Growth projections follow a hockey stick curve, with the value of products rising to $40bn in 2015 and $200bn in 2025! Growth to date has come from a combination of technology displacement, as exemplified by automotive pressure sensors and airbag accelerometers and new products, such as miniaturised guidance systems for military applications and wireless tire pressure sensors. Much of the growth in MEMS business is expected to come from products that are in the early stages of development or yet to be invented. Some of these devices include disposable chips for performing assays on blood and tissue samples, which are now performed in hospital laboratories, integrated optical switching and processing chips, and various RF communication and remote sensing products.The key to enabling the projected 25-fold growth in MEMS products is development of appropriate technologies for integrating multiple devices with electronics on a single chip. At present, there are two approaches to integrating MEMS devices with electronics. Either the MEMS device is fabricated in polysilicon, as part of the CMOS wafer fabrication sequence or a discrete MEMS device is packaged with a separate ASIC chip. Neither of these approaches is entirely satisfactory, though, for building the high-value, system-on-chip products that are envisioned. It is this author's opinion that a combination of self-assembly techniques in conjunction with wafer stacking, offer a viable path to realizing ubiquitous, complex MEMS systems.     

Electrostatically actuated resonant microcantilever beam in CMOS technology for the detection of chemical weapons

The design, fabrication, and testing of a resonant cantilever beam in complementary metal-oxide semiconductor (CMOS) technology is presented in this paper. The resonant cantilever beam is a gas-sensing device capable of monitoring hazardous vapors and gases at trace concentrations. The new design of the cantilever beam described here includes interdigitated fingers for electrostatic actuation and a piezoresistive Wheatstone bridge design to read out the deflection signal. The reference resistors of the Wheatstone bridge are fabricated on auxiliary beams that are immediately adjacent to the actuated device. The whole device is fabricated using a 0.6-/spl mu/m, three-metal, double-poly CMOS process, combined with subsequent micromachining steps. A custom polymer layer is applied to the surface of the microcantilever beam to enhance its sorptivity to a chemical nerve agent. Exposing the sensor with the nerve agent simulant dimethylmethylphosphonate (DMMP), provided a demonstrated detection at a concentration of 20 ppb or 0.1 mg/m/sup 3/. These initial promising results were attained with a relatively simple design, fabricated in standard CMOS, which could offer an inexpensive option for mass production of a miniature chemical detector, which contains on chip electronics integrated to the cantilever beam.     

与CMOS兼容的MEMS气压传感器工艺实现与性能分析

采用CMOS标准工艺,同时采用三种典型MEMS后处理关键工艺,重点通过对牺牲层释放工艺进行研究,制作实现了一种新型CMOS兼容的电容式气压传感器．在该传感器结构中,作为牺牲层的是在CMOS工艺中形成的掺硼氧化硅．通过释放使电容上电极悬空从而感应气压变化．释放过程采用氢氟酸HF、氯化铵、甘油和水的混合溶液．由于释放孔大小和释放孔间距的设计十分关键,通过实验验证优化了4μm×4μm的释放孔更适用于此传感器结构,并对此结构进行了性能分析与实验测试．结果表明,该气压传感器结构合理,工艺成功,重点解决了MEMS后处理中的牺牲层释放工艺与CMOS标准工艺的兼容问题,为利用CMOS标准工艺进行MEMS传感器的研制做出了有益的尝试．     

Continuous-Flow System for On-Line Water Monitoring Using Back-Side Contact ISFET-Based Sensors

A multiparametric continuous-flow system for on-line monitoring of water based on ISFET sensors is described. The ISFETs used have silicon nitride as gate material, and the electrical contacts are placed on the back side of the chip. This is a technological improvement that allows for a more compact ISFET packaging and greatly increases the lifetime of the sensor compared with planar type ISFETs, since the electrical parts are separated from the chemical environment. A special probe has been designed in order to encapsulate and apply these ISFETs into the flow system. Further, a reference electrode based on standard Ag/AgCl technology has been constructed according to the ISFET probe design in order to integrate both sensors in the same flow-through cell. These probes can be easily replaced in the flow system and are made of cheap and easily mechanized materials. Using these flow-through sensors, a continuous-flow system for the determination of pH, NH(4)(+), Ca(2+), and NO(3)(-) in waters has been designed. The system configuration is based on a modular design (one setup for each parameter and a common sampling channel), which allows simple manipulation and maintenance as well as a good flexibility for different analytical requirements. A study of the system characteristics was performed by following the specifications for water monitoring. Under the conditions established for the flow system, a sampling rate of 20 h(-)(1) was obtained for each parameter, and long-term stabilities of at least 3 weeks of daily work for ISFET sensors and 5 months for the reference electrode have been achieved. The response performances obtained show the feasibility of the BSC ISFET probe use in continuous-flow monitoring.     

Design of a single-chip pH sensor using a conventional 0.6-/spl mu/m CMOS process

A pH sensor fabricated on a single chip by an unmodified, commercial 0.6-/spl mu/m CMOS process is presented. The sensor comprises a circuit for making differential measurements between an ion-sensitive field-effect transistor (ISFET) and a reference FET (REFET). The ISFET has a floating-gate structure and uses the silicon nitride passivation layer as a pH-sensitive insulator. As fabricated, it has a large threshold voltage that is postulated to be caused by a trapped charge on the floating gate. Ultraviolet radiation and bulk-substrate biasing is used to permanently modify the threshold voltage so that the ISFET can be used in a battery-operated circuit. A novel post-processing method using a single layer of photoresist is used to define the sensing areas and to provide robust encapsulation for the chip. The complete circuit, operating from a single 3-V supply, provides an output voltage proportional to pH and can be powered down when not required.     

System integration design in MEMS — A case study of micromachined load cell

One of the critical issues in large scale commercial exploitation of MEMS technology is its system integration. In MEMS, a system design approach requires integration of varied and disparate subsystems with one of a kind interface. The physical scales as well as the magnitude of signals of various subsystems vary widely. Known and proven integration techniques often lead to considerable loss in advantages the tiny MEMS sensors have to offer. Therefore, it becomes imperative to think of the entire system at the outset, at least in terms of the concept design. Such design entails various aspects of the system ranging from selection of material, transduction mechanism, structural configuration, interface electronics, and packaging. One way of handling this problem is the system-in-package approach that uses optimized technology for each function using the concurrent hybrid engineering approach. The main strength of this design approach is the fast time to prototype development. In the present work, we pursue this approach for a MEMS load cell to complete the process of system integration for high capacity load sensing. The system includes; a micromachined sensing gauge, interface electronics and a packaging module representing a system-in-package ready for end characterization. The various subsystems are presented in a modular stacked form using hybrid technologies. The micromachined sensing subsystem works on principles of piezo-resistive sensing and is fabricated using CMOS compatible processes. The structural configuration of the sensing layer is designed to reduce the offset, temperature drift, and residual stress effects of the piezo-resistive sensor. ANSYS simulations are carried out to study the effect of substrate coupling on sensor structure and its sensitivity. The load cell system has built-in electronics for signal conditioning, processing, and communication, taking into consideration the issues associated with resolution of minimum detectable signal. The packaged system represents a compact and low cost solution for high capacity load sensing in the category of compressive type load sensor.     

Tungsten oxide as a gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistors

Tungsten oxide is currently used as gate insulator in pH-sensing ion-sensitive field-effect transistors (ISFETs) and in electrochromic devices. Its great potential as a high-κ dielectric with high transparency and temperature stability is reported. Owing to the low gate voltage sweep necessary to turn the transistor on and off, a possible application could be as a low-voltage pixel driver in active-matrix displays in harsh environments.     

A monolithic CMOS microhotplate-based gas sensor system

A monolithic CMOS microhotplate-based conductance-type gas sensor system is described. A bulk micromachining technique is used to create suspended microhotplate structures that serve as sensing film platforms. The thermal properties of the microhotplates include a 1-ms thermal time constant and a 10/spl deg/C/mW thermal efficiency. The polysilicon used for the microhotplate heater exhibits a temperature coefficient of resistance of 1.067/spl times/10/sup -3///spl deg/C. Tin(IV) oxide and titanium(IV) oxide (SnO/sub 2/,TiO/sub 2/) sensing films are grown over postpatterned gold sensing electrodes on the microhotplate using low-pressure chemical vapor deposition (LPCVD). An array of microhotplate gas sensors with different sensing film properties is fabricated by using a different temperature for each microhotplate during the LPCVD film growth process. Interface circuits are designed and implemented monolithically with the array of microhotplate gas sensors. Bipolar transistors are found to be a good choice for the heater drivers, and MOSFET switches are suitable for addressing the sensing films. An on-chip operational amplifier improves the signal-to-noise ratio and produces a robust output signal. Isothermal responses demonstrate the ability of the sensors to detect different gas molecules over a wide range of concentrations including detection below 100 nanomoles/mole.     

Organische Funktionsschichten in Polymerelektronik und Polymersolarzellen

Organic functional layers in polymer electronics and polymer solar cells Thin layers of organic functional polymers play the predominant role in polymer electronics like organic field effect transistors (OFET's) and in organic photovoltaic devices. The well‐known advantages of these solution‐processable materials opened the way for their welcoming now in application fields, which were fully occupied by inorganic semiconductors in the past. However, the polymer semiconductors show also some disadvantages, like a relatively low charge carrier mobility and a not yet sufficient long‐term stability. However, fore the aim of R&D for polymer electronics is not the replace of well‐tried electronic materials and technologies but the opening of new application fields for the new kind of low‐cost /low‐performance electronics. The paper presents recent results of OFET's with thin layers from conjugated polymers like poly(3‐alkylthiophenes), as active semiconducting material, and poly(4‐vinylphenol) as gate dielectricum. Experiments concerning generation of source‐drain electrodes based on polyaniline or Baytron P by laser ablation are represented. Additionally, printing techniques or laser modification are used for patterning of conducting polymers. The described polymer solar cells use for the photoactive layer a composite from polyalkylthiophenes, as light absorbing and charge generating polymer, and fullerene derivatives, responsible for fast electron transfer. Donator‐acceptor cells containing substituted fullerenes give also internationally the best efficiency with η ≈ 3%.     

CMOS chip as luminescent sensor for biochemical reactions

We describe a novel biochemical sensing method and its potential new biosensing applications. A light-sensitive complementary metal oxide semiconductor (CMOS) chip prepared through a standard 0.5-/spl mu/m CMOS process was developed for measuring biochemical reactions. A light producing enzymatic reaction catalyzed by horseradish peroxidase (HRP) was designed as a platform reaction to determine the concentration of hydrogen peroxide (H/sub 2/O/sub 2/) by the CMOS chip with a standard semiconductor parameter analyzer (HP4145). The kinetics of enzymatic reaction were determined and compared with a standard and sophisticated fluorometer (Hitachi F-4500) in a biochemical laboratory. Similar results were obtained by both instruments. Using glucose oxidase as an example, we further demonstrated that the HRP platform can be used to determine other H/sub 2/O/sub 2/ producing reactions with the CMOS system. The result points to an important application of the CMOS chip in biological measurements and in diagnosis of various health factors.     

A CMOS Time-of-Flight Range Image Sensor With Gates-on-Field-Oxide Structure

This paper presents a new type of CMOS time-of-flight (TOF) range image sensor using single-layer gates on field oxide structure for photo conversion and charge transfer. This simple structure allows the realization of a dense TOF range imaging array with 1515 mum² pixels in a standard CMOS process. Only an additional process step to create an n-type buried layer which is necessary for high-speed charge transfer is added to the fabrication process. The sensor operates based on time-delay dependent modulation of photocharge induced by back reflected infrared light pulses from an active illumination light source. To reduce the influence of background light, a small duty cycle light pulse is used and charge draining structures are included in the pixel. The TOF sensor chip fabricated measures a range resolution of 2.35 cm at 30 frames per second and an improvement to 0.74 cm at three frames per second with a pulsewidth of 100 ns.     

Amorphous oxide channel TFTs

Thin film transistors (TFTs) using amorphous oxides of post-transition metals: indium, gallium, and zinc for the channel materials are fabricated with radio-frequency magnetron sputtering methods for the deposition of the channel and the gate insulator layers, at room temperature with no high-temperature post-deposition annealing process. The TFTs operate as n-channel field-effect transistors with various structures of top/bottom gate and top/bottom source-and-drain contact including the inverse-stagger types, and with various materials for the gate insulators, the electrodes, and the substrates. The TFTs having smoother channel interfaces show the better performance at the saturation mobility beyond 10 cm² V^− 1 s^− 1 and the on-to-off current ratio over 10⁸ than the rough channel interfaces. The ring oscillator circuits operate with five-stage inverters of the top-gate TFTs or the inverse-stagger TFTs. Organic light-emission diode cells are driven by a simple circuit of the TFTs. It is also found by a combinatorial approach to the material exploration that the TFT characteristics can be controlled by the composition ratio of the metals in the channel layers. The amorphous oxide channel TFTs fabricated with sputtering deposition at low temperature could be a candidate for key devices of large-area flexible electronics.     

Low-concentration NO/sub 2/ detection with an adsorption porous silicon FET

Adsorption porous silicon FET (APSFET) is a porous silicon (PS)-based device constituted of a FET structure with a porous adsorbing layer between drain and source. Adsorbed gas molecules in the porous layer induce an inverted channel in the crystalline silicon under the PS itself. The mobile charge per unit area in the channel depends on the molecular gas concentrations in the sensing layer so that adsorbed gas molecules play a role similar to the charge on the gate of a FET. In this work, NO/sub 2/ detection by using the APSFET is demonstrated for the first time. NO/sub 2/ concentration as low as 100 ppb was detected. Devices with both as-grown and oxidized PS layers were fabricated and compared in order to investigate the effect of a low-temperature thermal oxidation on the electrical performances of the sensor. Nonoxidized sensors show a high sensitivity only for fresh devices, which reduces with the aging of the sample. Oxidation of the PS layer improves the electrical performance of sensors, in terms of stability, recovery time, and interference with the relative humidity level, keeping the high sensitivity to nitrogen dioxide.     

Pulsed galvanostatic control of solid-state polymeric ion-selective electrodes

We report on galvanostatically controlled solid-state reversible ion-selective sensors for cationic analytes utilizing a conducting polymer as a transduction layer between the polymeric membrane and electron-conductive substrate. The instrumental control of polymeric membrane ion-selective electrodes based on electrochemically induced periodic ion extraction in alternating galvanostatic/potentiostatic mode was introduced recently creating exciting possibilities to detect clinically relevant polyions such as heparin and protamine and drastically improve the sensitivity of ion-selective sensors limited by the Nernst equation. The present study forms the basis for development of reliable, robust, and possibly maintenance-free sensors that can be fabricated using screen-printing technology. Various aspects of the development of solid-contact galvanostatically controlled ion-selective electrodes with a conducting polymer as a transduction layer are considered in the present work on the example of a model system based on a sodium-selective membrane. The protamine-selective solid-contact sensor was fabricated and characterized, which represents the next step toward commercially viable polyion sensing technology. A substantial improvement of a low detection limit (0.03 mg L-1) was achieved. A simplified diffusion-based theoretical model is discussed predicting the polarization at the interface of the conducting polymer and the membrane, which can cause the disruption of the sensor response function at relatively small current densities.     

CMOS monolithic metal-oxide sensor system comprising a microhotplate and associated circuitry

A gas sensor system fabricated in industrial CMOS technology is presented, which includes, for the first time, a microhotplate and the necessary driving and control circuitry on a single chip. Post-complementary-metal-oxide-semiconductor (CMOS) fabrication steps, such as micromachining of the membrane structure, the deposition of noble metal on the electrodes, and the processing of the sensitive metal-oxide layer, have been developed to be fully compatible with the industrial CMOS process. Temperatures up to 350/spl deg/C were reached on the hotplates using a low-voltage power supply (5 V). A symmetric hotplate design with a temperature homogeneity of better than 2% in the heated area was realized. The integrated temperature controller regulates the membrane temperature with a resolution of /spl plusmn/0.3/spl deg/C in the tracking mode. The temperature increase on the bulk chip owing to heat transfer through the membrane is less than 2% of the respective membrane operation temperature (6/spl deg/C at 350/spl deg/C membrane temperature). The gas sensing performance of the sensor was assessed by test measurements with carbon monoxide (CO). The gas tests evidenced a limit of detection of less than 5 ppm CO.     

Transparent and Flexible Cellulose Nanocrystal/Reduced Graphene Oxide Film for Proximity Sensing

The rapid development of touch screens as well as photoelectric sensors has stimulated the fabrication of reliable, convenient, and human‐friendly devices. Other than sensors that detect physical touch or are based on pressure sensing, proximity sensors offer controlled sensibility without physical contact. In this work we present a transparent and eco‐friendly sensor made through layer‐by‐layer spraying of modified graphene oxide filled cellulose nanocrystals on lithographic patterns of interdigitated electrodes on polymer substrates, which help to realize the precise location of approaching objects. Stable and reproducible signals generated by keeping the finger in close proximity to the sensor can be controlled by humidity, temperature, and the distance and number of sprayed layers. The chemical modification and reduction of the graphene oxide/cellulose crystal composite and its excellent nanostructure enable the development of proximity sensors with faster response and higher sensitivity, the integration of which resolves nearly all of the technological issues imposed on optoelectronic sensing devices.     

A flexible and high temperature tolerant strain sensor of La_(0.7)Sr_(0.3)MnO_3/Mica

Flexible sensors have been widely investigated due to their broad application prospects in various flexible electronics. However, most of the presently studied flexible sensors are only suitable for working at room temperature, and their applications at high or low temperatures are still a big challenge. In this work, we present a multimodal flexible sensor based on functional oxide La_(0.7)Sr_(0.3)MnO_3(LSMO) thin film deposited on mica substrate. As a strain sensor, it shows excellent sensitivity to mechanical bending and high bending durability(up to 3600 cycles). Moreover, the LSMO/Mica sensor also shows a sensitive response to the magnetic field, implying its multimodal sensing ability. Most importantly, it can work in a wide temperature range from extreme low temperature down to 20 K to high temperature up to 773 K.The flexible sensor based on the flexible LSMO/mica hetero-structure shows great potential applications for flexible electronics using at extreme temperature environment in the future.     

A Neuromorphic Chip That Imitates the ON Brisk Transient Ganglion Cell Set in the Retinas of Rabbits

In this paper, a new CMOS design methodology is proposed to implement CMOS neuromorphic chips which imitate the ON brisk transient ganglion cell (GC) set of rabbits' retinas. The measurement results on the fabricated CMOS neuromorphic chip are consistent with the biological measurement results. Thus, the biological functions of the chip have been successfully verified. It can be used to understand more biological behaviors and visual language of retinas under different input optical images which have not yet been tested in biological experiments. Based on the results, the full GC sets of retina can be designed. Thus, many potential applications of retinal chips on motion sensors, computer vision, retinal prosthesis, and biomedical devices are feasible.