Magnetotransport properties of undoped amorphous carbon films

Anomalous positive magnetoresistance (MR) up to 36% was observed at 2 K and 12 T in the undoped amorphous carbon (a-C) film deposited on glass substrate by pulsed laser deposition at 500 °C. There is no tendency of saturation of MR with increase of the magnetic field. The MR decreases as the measurement temperature increases from 2 to 80 K, and could hardly be observed above 80 K. As the deposition temperature grows from 300 to 600 °C, the disorder degree of the a-C film decreases, and the value of MR also decreases, indicating that the lower disorder degree results in a smaller MR. The mechanism of this MR could be ascribed to the wave function shrinkage. It could help to understand the MR phenomenon in amorphous material systems.     

Resonant Raman studies of tetrahedral amorphous carbon films

Resonant Raman scattering has been used to study the tetrahedral amorphous carbon films deposited by the filtered cathodic vacuum arc technique. The excitation wavelengths were 244, 488, 514 and 633 nm, corresponding to photon energies of 5.08, 2.54, 2.41 and 1.96 eV, respectively. In the visible Raman spectra only vibrational modes of sp²-bonded carbon (G and D peaks) are observed, while a wide peak (called the T peak) can be observed at approximately 1100 cm⁻¹ by UV-Raman spectra which is associated with the vibrational mode of sp³-bonded carbon. Both the position and the width of the G peak decrease almost linearly with increasing excitation wavelength, which is interpreted in terms of the selective ππ* resonant Raman scattering of sp²-bonded carbon clusters with various sizes. The G peak position in the UV-Raman spectra, the T peak position and the intensity ratios of I_D/I_G and I_T/I_G all exhibit maximum or minimum values at the carbon ion energy of 100 eV. The changes of these spectral parameters are discussed and correlated with the sp³ fraction of carbon atoms in the films.     

Linear sweep anodic stripping voltammetry of heavy metals from nitrogen doped tetrahedral amorphous carbon thin films

Nitrogen doped tetrahedral amorphous carbon (ta-C:N) thin films were deposited on p-Si (1 1 1) substrates (1 × 10⁻³ to 6 × 10⁻³ Ω cm) by a filtered cathodic vacuum arc technique with different nitrogen flow rates (3 and 20 sccm). The ta-C:N film coated samples were used as working electrodes to detect trace heavy metals such as zinc (Zn), lead (Pb), copper (Cu) and mercury (Hg) by using linear sweep anodic stripping voltammetry in 0.1 M KCl solutions (pH 1). The influence of nitrogen flow rate on the sensitivity of the films to the metal ions was investigated. The results showed that the current response of the ta-C:N film electrodes was significant to differentiate all the tested trace metal ions (Zn²⁺, Pb²⁺, Cu²⁺, and Hg²⁺) and the three ions (Pb²⁺ + Cu²⁺ + Hg²⁺) could be simultaneously identified with good stripping peak potential separations.     

Chemical analysis and vibrational properties of boronated tetrahedral amorphous carbon films

Boronated tetrahedral amorphous carbon (ta-C:B) films were prepared by filtered cathodic vacuum arc technique using boron mixed graphite targets. The effect of boron content on the chemical bonding and vibrational properties of these films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and Fourier transform infrared spectroscopy. It has been found that boron atoms are predominantly configured in a graphitic network, while the carbon atoms in the ta-C:B films are mainly in sp³ hybridization which tend to decrease as boron content increases. The Raman and infrared spectra of ta-C:B films both show prominent features in the regions of 1100–1900 cm^− 1 and 900–1600 cm^− 1 respectively. It was identified that the Raman parameters are strongly correlated with the boron content which is due to the clustering of sp² domains induced by B introduction. The activation of infrared spectrum of ta-C:B film is a consequence of heteroatomic (C–B) vibration combined with changes in the sp² carbon configuration. And the enhanced infrared absorption of ta-C:B with increased boron incorporation results from the increased effective charges in the delocalized sp² carbon phase.     

New electrochemically improved tetrahedral amorphous carbon films for biological applications

Carbon based materials have been frequently used to detect different biomolecules. For example high sp³ containing hydrogen free diamond-like carbon (DLC) possesses many properties that are beneficial for biosensor applications. Unfortunately, the sensitivities of the DLC electrodes are typically low. Here we demonstrate that by introducing topography on the DLC surface and by varying its layer thickness, it is possible to significantly increase the sensitivity of DLC thin film electrodes towards dopamine. The electrode structures are characterized in detail by atomic force microscopy (AFM) and conductive atomic force microscopy (C-AFM) as well as by transmission electron microscopy (TEM) combined with electron energy loss spectroscopy (EELS). With cyclic voltammetry (CV) measurements we demonstrate that the new improved DLC electrode has a very wide water window, but at the same time it also exhibits fast electron transfer rate at the electrode/solution interface. In addition, it is shown that the sensitivity towards dopamine is increased up to two orders of magnitude in comparison to the previously fabricated DLC films, which are used as benchmarks in this investigation. Finally, it is shown, based on the cyclic voltammetry measurements that dopamine exhibits highly complex behavior on top of these carbon electrodes.     

Field emission properties from aligned carbon nanotube films with tetrahedral amorphous carbon coatings

Tetrahedral amorphous carbon (ta-C) film was coated on aligned carbon nanotube (CNT) films via filtered cathodic vacuum arc (FCVA) technique. Field electron emission properties of the CNT films and the ta-C/CNT films were measured in an ultra high vacuum system. The I–V measurements show that, with a thin ta-C film coating, the threshold electric field (E_thr) of CNTs can be significantly decreased from 5.74 V/μm to 2.94 V/μm, while thick ta-C film coating increased the E_thr of CNTs to around 8.20 V/μm. In addition, the field emission current density of CNT films reached 14.9 mA/cm² at 6 V/μm, while for CNTs film coated with thin ta-C film only 3.1 V/μm of applied electric field is required to reach equal amount of current density. It is suggested that different field emission mechanisms should be responsible for the distinction in field emission features of CNT films with different thickness of ta-C coating.     

Field emission from tetrahedral amorphous carbon films with various surface morphologies

Field emission properties of tetrahedral amorphous carbon films prepared by filtered cathodic vacuum arc technique have been compared with different surface morphologies. With fewer cycles of conditioning, field emission from relatively rough granular ta-C films on nickel-coated silicon substrates was routinely improved, due to a local field enhancement resulting from both a ‘protrusion-on-protrusion’ geometry and a relatively high sp² content in the film. A 2-MeV ion implantation machine was also employed to intentionally produce local graphitic channels in smooth ta-C films with a high fraction of sp³ content on bare silicon. A relatively low threshold field was obtained from the ta-C film implanted at a dose of 10¹² cm⁻², which still remained an extremely smooth surface. However, for the highly graphitic sample implanted with a higher dose of over 4×10¹³ cm⁻², no electron field emission was observed, even under a very high electric field of 40 V μm⁻¹. Therefore, a suitable sp² content in an sp³ matrix, resulting in graphitic conductive channels in amorphous carbon films to produce a local field enhancement, may be the main factor in obtaining low threshold fields. Furthermore, protrusive structures could further increase the field enhancement factor, due to a ‘protrusion-on-protrusion’ geometry.     

Direct Laser Interference Patterning of tetrahedral amorphous carbon films for tribological applications

In this work, the influence of surface topography and micro structural changes on the tribological properties of tetrahedral amorphous carbon coatings (ta-C) structured using a holographic technique the direct laser interference pattering (DLIP) is investigated. By utilizing a nanosecond pulsed UV-laser (wavelength 355 nm), both ablation and graphitization thresholds were determined as a function of the pulse number. Incubation effects for the ablation threshold ( ~ 205 mJ cm^− 2) were found to be negligible. However, for the graphitization of the film thresholds varying from 47 to 74 mJ cm^− 2 were observed depending on the number of laser pulses utilized (from 1 to 30) and thus obtaining an incubation factor of 1.13. Using two- and three-beam interference setups, dot- and line-like periodic arrays were fabricated. The tribological performance of these patterns was investigated under reciprocating sliding with a ball on disk method under non-lubricated conditions showing that coefficient of friction can be reduced from ~ 0.089 (un-patterned) to ~ 0.055 patterned ta-C ( ~ 30% reduction). The results can be explained based on the reduction of surface contact area combined with high hardness as well as the good intrinsic tribological properties of the ta-C films.     

Preparation of tetrahedral amorphous carbon films by filtered cathodic vacuum arc deposition

Tetrahedrally bonded amorphous carbon (ta-C) and nitrogen doped (ta-C:N) films were obtained at room temperature in a filtered cathodic vacuum arc (FCVA) system incorporating an off-plane double bend (S-bend) magnetic filter. The influence of the negative bias voltage applied to substrates (from −20 to −350 V) and the nitrogen background pressure (up to 10⁻³ Torr) on film properties was studied by scanning electron microscopy (SEM), electron energy loss spectroscopy (EELS), Raman spectroscopy, X-ray photoemission spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and X-ray reflectivity (XRR). The ta-C films showed sp³ fractions between 84% and 88%, and mass densities around 3.2 g/cm³ in the wide range of bias voltage studied. In contrast, the compressive stress showed a maximum value of 11 GPa for bias voltages around −90 V, whereas for lower and higher bias voltages the stress decreased to 6 GPa. As for the ta-C:N films grown at bias voltages below −200 V and with N contents up to 7%, it has been found that the N atoms were preferentially sp³ bonded to the carbon network with a reduction in stress below 8 GPa. Further increase in bias voltage or N content increased the sp² fraction, leading to a reduction in film density to 2.7 g/cm³.     

Fabrication and bio-functionalization of tetrahedral amorphous carbon thin films for bio sensor applications

Tetrahedral amorphous carbon (ta-C) thin films are a promising material for use as biocompatible interfaces in applications such as in-vivo biosensors. However, the functionalization of ta-C film surface, which is a pre-requisite for biosensors, remains a big challenge due to its chemical inertness. We have investigated the bio-functionalization of ta-C films fabricated under specific physical conditions through the covalent attachment of functional biomolecular probes of peptide nucleic acid (PNA) to ta-C films, and the effect of fabrication conditions on the bio-functionalization. The study showed that the functional bimolecular probes such as protected long-chain ω-unsaturated amine (TFAAD) can be covalently attached to the ta-C surface through a well-defined structure. With the given fabrication process, electrochemical methods can be applied to the detection of biomolecular interaction, which establishes the basis for the development of stable, label-free biosensors.     

Spectroscopic studies of undoped and doped polystyrene films

Spectroscopic (i.r., u.v.) studies of undoped polystyrene and that doped with Acrylic Acid films (30μ thick), prepared by isothermal immersion technique, have been reported. It is found that in the case of i.r. spectra an additional absorption peak appears near 1420cm^?1, whereas those present near 1300 and 980cm^?1, as shoulders in the undoped sample, appear as sharp peaks in the doped samples. In the region 3300–2500cm^?1 a broadening appears in the doped films which increases with the dopant concentration. In the case of u.v. spectra, out of four absorption regions present in the undoped films two bands merge and only three appear in the doped ones. The u.v. absoption increases with the dopant concentration. These results have been explained on the basis of a charge transfer complex formation due to the interaction between the dopant and the polymer matrix.     

Defect studies and photoelectrical properties of phosphorus doped amorphous carbon films

This paper reports on the successful deposition of n-type phosphorus doped carbon (n-C:P) thin films and fabrication of n-C:P/p-Si cells by pulsed laser deposition (PLD) using graphite target at room temperature. The cell performances have been tested in the dark for the current–voltage (I–V) rectifying curve and I–V working curve under illumination when exposed to AM 1.5 SUN illumination condition (100 mW/cm², 25 °C). The cells fabricated using 7% of phosphorus by weight percentages in the graphite target (Pwt%) show the highest energy conversion efficiency, η=1.14% and fill factor, FF=41%. The quantum efficiency of the cells is observed to improve with Pwt%. The dependence of Pwt% on the optical and physical properties of the deposited films and the photovoltaic characteristic of the n-C:P/p-Si heterojunction cells are discussed.     

Electro- and magneto-transport properties of amorphous carbon films doped with iron

Electro- and magneto-transport properties of amorphous carbon films doped with iron element have been systematically studied. The electro-transport mechanism of the films is dominated by thermal activation at T > 200 K, Mott-type variable range hopping (VRH) at 200 K > T > 60 K and Efros-Shklovskii type (ES-) VRH at T < 60 K. An anomalous giant positive magnetoresistance (MR) 6.40% is found at the ES-VRH range, which is attributed to the spin blockage effect. At high temperatures, an anomalous Hall effect (AHE) is also found with a large AHE coefficiency 49.6 μΩcm/T. Electron energy loss spectroscopy (EELS) reveals that iron atoms chemically bond with carbon matrix. These iron carbides exist as amorphous nanoparticles with a diameter of 6-12 nm, which is regarded as the origin of the MR and AHE. Besides, the films are p-type conductive at high temperature, which might be related with the iron doping. These properties make iron doped amorphous carbon films applicable in carbon-based solar cells, magnetic sensors or some other multifunctional devices.     

Substrate bias effect on structure of tetrahedral amorphous carbon films by Raman spectroscopy

Diamond-like carbon (DLC) films form a critical protective layer on magnetic hard disks and their reading heads. Now tetrahedral amorphous carbon films (ta–C) thickness of 2 nm are becoming the preferred means due to the highly sp³ content. In this paper, Raman spectra at visible and ultraviolet excitation of ta–C films have been studied as a function of substrate bias voltage. The spectra show that the sp³ content of 70 nm thick DLC films increases with higher substrate bias, while sp³ content of 2 nm ultra-thin films falls almost linearly with bias increment. And this is also consistent with the hardness measurement of 70 nm thick films. We proposed that substrate bias enhances mixing between the carbon films and either the Si films or Al₂O₃TiC substrate such that thin films contain less sp³ fraction. These mixing bonds are longer than C–C bonds, which inducing the hardness decreasing of ultra-thin DLC films with bias. But for 70 nm DLC, the effect of mixing layer can be negligible by compared to bias effect with higher carbon ion energy. So sp³ content will increase for thick films with substrate bias.     

Heat treatment of tetrahedral amorphous carbon films grown by filtered cathodic vacuum-arc technique

Tetrahedral amorphous carbon (ta-C) is a potential low-cost substitute for diamond in certain applications, but little is known of the temperature range over which its desirable properties are retained. The thermal stability of tetrahedral amorphous carbon (ta-C) films has been investigated by heat treatment of the films at temperatures from room temperature to 450°C in high vacuum, low vacuum and oxygen ambient. It was found that heat treatment in oxygen ambient leads to a much more prominent variation in film thickness, stress and hardness than in both low and high vacuum. Raman studies also show an increase of the G-band frequency to higher values, an increase of the integrated intensity ratio and a narrowing of the G bands for films annealed in oxygen ambient with increasing temperature. By contrast, ta-C films exhibit a high resistance to degradation during treatment in low and high vacuum. They sustain their structure, thickness, stress and hardness for temperatures up to 400°C.     

Preparation and microstructure properties of tetrahedral amorphous carbon films by pulsed laser deposition using camphoric carbon target

The properties of tetrahedral amorphous carbon (ta-C) films grown by pulsed laser deposition (PLD) using camphoric carbon (CC) target and their respective effects of diamond percentages by weight in the target (Dwt.%) are discussed. Scanning electron microscopy (SEM), atomic force microscopy (AFM), Visible-Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) analyses indicated that the Dwt.% noticeably modified the sp³ bonds content and the morphology of the ta-C films. The optical gap (E_g) and electrical resistivity (ρ) increase with Dwt.% up to 1.6 eV and 5.63×10⁷ (Ω cm), respectively, for the ta-C films deposited using target with higher of 50 Dwt.%. We found that the Dwt.% has modified the surface morphological, structural, bonding and physical properties of the camphoric carbon films.     

Study of the mechanical properties of tetrahedral amorphous carbon films by nanoindentation and nanowear measurements

Nanoindentation and nanowear measurements, along with the associated analysis suitable for the mechanical characterization of tetrahedral amorphous carbon (ta-C) films are discussed in this paper. Films of approximately 100-nm thick were deposited on silicon substrates at room temperature in a filtered cathodic vacuum arc evaporation system with an improved S-bend filter that yields films with high values of mass density (3.2 g/cm³) and sp³ content (84–88%) when operating in a broad bias voltage range (−20 V to −350 V). Nanoindentation measurements were carried out on the films with a Berkovich diamond indenter applying loads in the 100 μN–2 mN range, leading to maximum penetration depths between 10 and 60 nm. In this measurement range, the ta-C thin-films present a basically elastic behavior with high hardness (45 GPa) and high Young's modulus (340 GPa) values. Due to the low thickness of the films and the shallow penetration depths involved in the measurement, the substrate influence must be taken into account and the area function of the indenter should be accurately calibrated for determination of both hardness and Young's modulus. Moreover, nanowear measurements were performed on the films with a sharp diamond tip using multiple scans over an area of 3 μm², producing a progressive wear crater with well-defined depth which shows an increasing linear dependence with the number of scans. The wear resistance at nanometric scale is found to be a function of the film hardness.     

Evolution of compressive stress and electrical conductivity of tetrahedral amorphous carbon films with phosphorus incorporation

Successful modification of stress and conductivity for tetrahedral amorphous carbon (ta-C) films is realized by phosphorus incorporation via filtered cathodic vacuum arc technique with PH₃ as the impurity source. By establishing the structure as a function of phosphorus content, it is found that phosphorus fraction in phosphorus incorporated ta-C (ta-C:P) films increases with varying levels of PH₃ from 3 to 30 sccm, and that all samples retain their amorphous structures without remarkable changes, just exhibiting the clustering of sp² sites and the evolution of structural ordering. Furthermore, the addition of phosphorus causes the compressive stress relaxation in terms of the rearrangement in atomic bonding structures. The increased number of localized electronic π and π⁎ states as hopping sites after phosphorus incorporation results in several orders of magnitude increase in the conductivity, and the films represent the hopping conduction in band tail states in the temperature range of 293–463 K. However, more H induced by excessive PH₃ may saturate some defects and compensate the hopping sites, leading to a slight drop in the conductivity. The nature of ta-C:P films as n-type semiconductors is proved from the features of rectifying current–voltage cures.     

Nanotribological and nanomechanical properties of 5–80 nm tetrahedral amorphous carbon films on silicon

Nanoscratch testing has been used to investigate the tribological behaviour of 5, 20, 60 and 80 nm tetrahedral amorphous carbon (ta-C) thin films deposited on silicon by the filtered cathodic vacuum arc method. The nanoscratch behaviour of the films was found to depend on the film thickness, with 60 and 80 nm films undergoing border cracking and then at higher critical load a dramatic delamination event. 5 and 20 nm films have a lower critical load for onset of border cracks but do not undergo a clear dramatic failure, and instead are increasingly worn/ploughed through until film removal as confirmed by microscopic analysis. This is consistent with the thinner films having lower stress and reduced load-carrying ability. Nanoindentation confirms that the thicker films have enhanced load support and higher measured composite (film + substrate) hardness. The 80 nm film in particular can retain appreciable load support whilst deformed during indentation, as shown by its ability to alter the critical loads for contact-induced phase transformations in the Silicon substrate during unloading.