Raman spectroscopy measurements of DC-magnetron sputtered carbon nitride (a-C:N) thin films for magnetic hard disk coatings

As a protective coating for hard disks in magnetic storage applications, amorphous carbon nitride (a-C:N) thin films have proved superior to DLC (diamond-like carbon) a-C:H films in terms of durability, wear-resistance and adhesion properties. In this study, we present Raman spectroscopy investigations of a-C:N films which were produced by DC-magnetron sputtering systems. The layers were deposited with a variable nitrogen content, thickness and substrate temperature. Raman measurements were carried out with two different excitation lasers at wavelengths of 488 and 532 nm. The spectra show that besides the typical carbon D- and G-bands, two other characteristic bands are present at approximately 690 and 1090 cm⁻¹. The meaning and identification of these bands is not clear in the literature. In order to obtain more information, the films were also characterized by various analytical techniques, e.g. time-of-flight secondary ion mass spectrometry (ToF-SIMS), Auger electron spectroscopy (AES), ellipsometry, and n+k optical measurements. The Raman G-band position shows a systematic shift with the varying nitrogen content of the films. A comparison of layer thickness and the total area of D-, G- and 1090 cm⁻¹ bands also shows a significant correlation. The results offer Raman spectroscopy as a possible monitoring tool for carbon nitride coatings in the production of magnetic hard disk drives.     

Electrochemical behavior of the Ti–6Al–4V alloy coated with a-C:H films

In this work diamond-like carbon films were deposited on the Ti–6Al–4V alloy, which has been used in aeronautics and biomedical fields, by electrical discharges using a magnetron cathode and a 99.999% graphite target in two different atmospheres, the first one constituted by argon and hydrogen and the second one by argon and methane. Films deposited using the argon/hydrogen mixture were called a-C:H, while films deposited using the argon/methane mixture were called DLC. Raman spectroscopy was used to study the structure of the films. The Raman spectra profile of the a-C:H films is quite different from that of the DLC films. The disorder degree of the graphite crystalline phase in a-C:H films is higher than in DLC films (a-C:H films present small values for the the I_D/I_G ratio). Potentiodynamic corrosion tests in 0.5 mol l⁻¹ NaCl aqueous solution, pH 5.8, at room temperature (≈25 °C) were carried out as for the a-C:H as for the DLC coated surfaces. Comparison between the corrosion parameters of a-C:H and DLC coated surfaces under similar deposition time, showed that DLC coated surfaces present bigger corrosion potential (E_corr) and polarization resistance than those coated with a-C:H films. Electrochemical impedance spectroscopy (EIS) was also used to study the electrochemical behavior of a-C:H and DLC coated surfaces exposed to 0.5 mol l⁻¹ aqueous solution. The EIS results were simulated with equivalent electrical circuit models for porous films. The results of these simulations showed similar tendency to the one observed in the potentiodynamic corrosion tests. The DLC film resistance and the charge transfer resistance (R_ct) for the DLC coated surface/electrolyte interface were bigger than the ones determined for the a-C:H coated surfaces.     

Nanotribological study of PECVD DLC and reactively sputtered Ti containing carbon films

Amorphous carbon film, also known as DLC film, is a promising material for tribological application. It is noted that properties relevant to tribological application change significantly depending on the method of preparation of these films. These properties are also altered by the compositions of these films. DLC films are well known for their self-lubricating properties, as well. In view of this, the objective of the present work is to compare the tribological properties of diamond like carbon (DLC) film obtained by plasma enhanced chemical vapour deposition (PECVD) with the Ti containing nanocrystalline carbon (Ti/a-C:H) film obtained by unbalanced magnetron sputter deposition (UMSD) in nN load range. Towards that purpose, DLC and Ti/a-C:H films are deposited on silicon substrate by PECVD and UMSD processes respectively. The microstructural features and the mechanical properties of these films are determined by scanning electron microscope (SEM), transmission electron microscope (TEM) and nano indenter. The surface topographies and the friction force surfaces of these films are evaluated by means of an atomic force microscope (AFM). The results show that although PECVD DLC film has higher elastic modulus and higher hardness than UMSD Ti/a-C:H film, the surface roughness and the friction coefficient of PECVD film is significantly higher than that of UMSD Ti/a-C:H film.     

The Effects of Accelerated Aging and Contact with Food Simulants on the Adhesion of Amorphous Hydrogenated Carbon Films Deposited on Clarified Polypropylene

This work focuses mainly on the influence of time, temperature, and contact with food simulants on the adhesion of amorphous hydrogenated carbon (a-C:H) films obtained by plasma-enhanced chemical vapor deposition (PECVD) in clarified polypropylene (cPP). Two types of films prepared by PECVD were studied: diamond-like carbon (DLC) and polymer-like carbon (PLC) films that can both act as a functional barrier. The adhesion between the film and polymer substrates is critical in relation to the barrier effectiveness during the packaging shelf life. Therefore, the adhesion was analyzed by a tape test and scanning electron microscopy (SEM). The films were exposed to Food and Drug Administration (FDA) listed food simulants and were submitted to an accelerated aging test to evaluate the long-term adhesion performance of a-C:H films. The chemical alterations on the surface related to the accelerated aging test and the liquid simulants were analyzed by a contact angle test. It showed that the polarity of a-C:H films increased after immersion in liquid simulants, indicating a change on the surface. Before the accelerated aging test, the SEM micrographs and the tape test indicated that the PLC film has a structure with lower surface tension and, therefore, regions with fewer detachment points in relation to the DLC film. The results obtained in this study showed that the adhesion behavior and preservation of the a-C:H structure (DLC or PLC) are related to intrinsic factors such as the type of film structure (flexible or rigid) and the polymeric substrate.     

Characterization of the mechanical properties of diamond-like carbon films

A recently suggested method to measure the elastic modulus of diamond-like carbon (DLC) films was reviewed. This method used a DLC bridge or free overhang which is free from the mechanical constraint of the substrate. Because of the high residual compressive stress of the DLC film, the bridge or the overhang exhibited a sinusoidal displacement on removing the mechanical constraint. Measuring the amplitude and wavelength of the sinusoidal displacement made it possible to measure the strain of the film which occurred by stress relaxation. Combined with independent stress measurement using the laser reflection method, this method allowed the calculation of the biaxial elastic modulus of the DLC film. This method was successfully applied to obtain the elastic properties of various DLC films from polymeric hydrogenated amorphous carbon (a-C:H) to hard tetrahedral amorphous carbon (ta-C) films. Since the substrate is completely removed from the measurement system, this method is insensitive to the mechanical properties of substrate. The mechanical properties of very thin DLC films could be thus measured and then can reveal the structural evolution of a-C:H films during the initial stages of deposition.     

Internal stress of a-C:H(N) films deposited by radio frequency plasma enhanced chemical vapor deposition

Amorphous hydrogenated carbon nitride [a-C:H(N)] films were deposited from the mixture of C₂H₂ and N₂ using the radio frequency plasma enhanced chemical vapor deposition technique. The films were characterized by X-ray photon spectroscopy, infrared, and positron annihilation spectroscopy. The internal stress was measured by substrate bending method. Up to 9.09 at% N was incorporated in the films as the N₂ content in the feed gas was increased from 0 to 75%. N atoms are chemically bonded to C as C–N, CN and CN bond. Positron annihilation spectra shows that density of voids increases with the incorporation of nitrogen in the films. With rising nitrogen content the internal stress in the a-C:H(N) films decrease monotonically, and the rate of decrease in internal stress increase rapidly. The reduction of the average coordination number and the relax of films structure due to the decrease of H content and sp³/sp² ratio in the films, the incorporation of nitrogen atoms, and the increases of void density in a-C:H(N) films are the main factors that induce the reduction of internal stress.     

Enhancement of fluorine doped amorphous carbon thin films from microwave surface wave plasma activated above room temperature

Fluorinated amorphous carbon (a-C:F) thin films were synthesized above room temperature by microwave surface wave plasma chemical vapour deposition (MW SWP CVD). The effect of deposition temperature on optical, electrical, chemical and bonding properties of the a-C:F films were studied by ultraviolet–visible spectroscopy (UV–VIS), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectrometry (XPS), Raman spectrometry and TEM measurements. The film exhibits high transparency and decrease in optical band gap with increasing deposition temperature. FTIR study shows the increase in CC and decrease in C–Fx bonds of the films with increasing deposition temperature. Raman study shows some important structural changes in the films due to fluorine incorporation. XPS result shows the shift of carbon peak to higher binding energy due to carbon fluorine link to the films. TEM shows the increasing graphitic layer in the films with increasing deposition temperature.     

Electrochemical properties of N-doped hydrogenated amorphous carbon films fabricated by plasma-enhanced chemical vapor deposition methods

Nitrogen-doped hydrogenated amorphous carbon thin films (a-C:N:H, N-doped DLC) were synthesized with microwave-assisted plasma-enhanced chemical vapor deposition widely used for DLC coating such as the inner surface of PET bottles. The electrochemical properties of N-doped DLC surfaces that can be useful in the application as an electrochemical sensor were investigated. N-doped DLC was easily fabricated using the vapor of nitrogen contained hydrocarbon as carbon and nitrogen source. A N/C ratio of resulting N-doped DLC films was 0.08 and atomic ratio of sp³/sp²-bonded carbons was 25/75. The electrical resistivity and optical gap were 0.695 Ω cm and 0.38 eV, respectively. N-doped DLC thin film was found to be an ideal polarizable electrode material with physical stability and chemical inertness. The film has a wide working potential range over 3 V, low double-layer capacitance, and high resistance to electrochemically induced corrosion in strong acid media, which were the same level as those for boron-doped diamond (BDD). The charge transfer rates for the inorganic redox species, Fe^2+/3+ and Fe(CN)₆^4−/3− at N-doped DLC were sufficiently high. The redox reaction of Ce^2+/3+ with standard potential higher than H₂O/O₂ were observed due to the wider potential window. At N-doped DLC, the change of the kinetics of Fe(CN)₆^3−/4− by surface oxidation is different from that at BDD. The rate of Fe(CN)₆^3−/4− was not varied before and after oxidative treatment on N-doped DLC includes sp² carbons, which indicates high durability of the electrochemical activity against surface oxidation.     

The influence of nitrogen on the dielectric constant and surface hardness in diamond-like carbon (DLC) films

In this work a carbon target was sputtered by a methane/argon/nitrogen plasma in order to produce nitrogenated diamond-like carbon films (a-C:H:N). As the N₂ content in the sputtering gas was increased, the deposition rate increased markedly. Rutherford backscattering spectrometry (RBS) was used to investigate the chemical composition of the films. This nitrogen incorporation modifies the chemical bonding structure of the films, as shown by the analysis of the Raman spectra, including the occurrence of two extra peaks at approximately 2200 and 690 cm⁻¹. Electrical properties were measured through capacitance–voltage (C–V) curves. The hardness of the films decreased with the N content as shown by measurements performed by indentation method. A correlation among the Raman studies, the N content in the films, the dielectric constant and the surface hardness is presented.     

Cathodoluminescence and electron field emission of boron-doped a-C:N films

The optical and electrical properties of so-called carbon nitride films (a-C:N) and boron doped so-called carbon nitride films (a-C:N:B) are studied with cathodoluminescence (CL) spectroscopy and electron field emission measurement. The a-C:N films were first deposited on Si by a filtered cathodic arc plasma system, and then boron ions (∼1 × 10¹⁶ cm⁻²) were implanted into the a-C:N films to form a-C:N:B films by a medium current implanter. The structural and morphological properties of a-C:N and a-C:N:B films were then analyzed using secondary ion mass spectrometer, X-ray photoelectron spectroscopy, FT-IR spectra, Raman spectroscopy and atomic force microscopy. The a-C:N film exhibits luminescence of blue light (∼2.67 eV) and red light (∼1.91 eV), and the a-C:N:B film displays luminescence of blue light (∼2.67 eV) in CL spectra measured at 300 K. Furthermore, the incorporated boron atoms change the electron field emission property, which shows a higher turn on field for the a-C:N:B film (3.6 V/μm) than that for the a-C:N film (2.8 V/μm).     

Structural investigation and gas barrier performance of diamond-like carbon based films on polymer substrates

In this report, tetrahedral amorphous carbon (ta-C), hydrogenated amorphous carbon (a-C:H), silicon doped tetrahedral amorphous carbon (ta-C:Si:H), and silicon doped hydrogenated amorphous carbon (a-C:H:Si) films with thickness in the range 50-370 nm have been produced by PECVD (Plasma Enhanced Chemical Vapour Deposition) and FCVA ( Filtered Cathodic Vacuum Arc) techniques on Polyethylene terepthalate (PET) and polycarbonate (PC) substrates. The paper is concerned with exploring the links between the atomic structure, gas barrier performance in carbon based films deposited on polymer substrates. A range of techniques including XRR, NEXAFS, Raman, surface profilometry, nano-indentation and water vapour permeation analysis were used to analyze the microstructure and properties of the films. The intensity and area of π* peak at the C K (carbon) edge of the NEXAFS spectra was lower in the FCVA films in comparison to that of PECVD ones confirming the higher sp³ content of FCVA films. The surface of ta-C films showed a network of micro-cracks, which is detrimental for gas barrier application. However, the surfaces of both ta-C:H:Si and a-C:H:Si silicon-incorporated films were almost free of cracks. We also found that the incorporation of Si into both types of DLC films lead to a significant reduction of water vapour transmission rate.     

Substrate bias effect on structure of tetrahedral amorphous carbon films by Raman spectroscopy

Diamond-like carbon (DLC) films form a critical protective layer on magnetic hard disks and their reading heads. Now tetrahedral amorphous carbon films (ta–C) thickness of 2 nm are becoming the preferred means due to the highly sp³ content. In this paper, Raman spectra at visible and ultraviolet excitation of ta–C films have been studied as a function of substrate bias voltage. The spectra show that the sp³ content of 70 nm thick DLC films increases with higher substrate bias, while sp³ content of 2 nm ultra-thin films falls almost linearly with bias increment. And this is also consistent with the hardness measurement of 70 nm thick films. We proposed that substrate bias enhances mixing between the carbon films and either the Si films or Al₂O₃TiC substrate such that thin films contain less sp³ fraction. These mixing bonds are longer than C–C bonds, which inducing the hardness decreasing of ultra-thin DLC films with bias. But for 70 nm DLC, the effect of mixing layer can be negligible by compared to bias effect with higher carbon ion energy. So sp³ content will increase for thick films with substrate bias.     

A superhard diamond-like carbon film

A superhard hydrogen-free amorphous diamond-like carbon (DLC) film was deposited by pulsed arc discharge using a carbon source accelerator in a vacuum of 2×10⁻⁴ Pa. The growth rate was about 15 nm/min and the optimum ion-plasma energy was about 70 eV. The impact of doping elements (Cu, Zr, Ti, Al, F(Cl), N) on the characteristics of DLC films deposited on metal and silicon substrates was studied aiming at the choice of the optimum coating for low friction couples. The microhardness of thick (≥20 μm) DLC films was studied by Knoop and Vickers indentations, medium thick DLC films (1–3 μm) were investigated using a ‘Fischerscope’, and Young's module of thin films (20–70 nm) was studied by laser induced surface acoustic waves. The bonds in DLC films were investigated by electron energy loss spectroscopy (EELS), X-ray excited Auger electron spectroscopy (XAES), and X-ray photoelectron spectroscopy (XPS). The adhesion of DLC films was defined by the scratch test and Rockwell indentation. The coefficient of friction of the Patinor DLC film was measured by a rubbing cylinders test and by a pin-on-disk test in laboratory air at about 20% humidity and room temperature. The microhardness of the Patinor DLC film was up to 100 GPa and the density of the film was 3.43–3.65 g/cm³. The specific wear rate of the Patinor DLC film is comparable to that of other carbon films.     

Field emission from metal-containing amorphous carbon composite films

Metal-containing (Co, Al and Ti) amorphous carbon composite films (a-C:Me) have been prepared by the filtered cathodic arc technique using metal-containing graphite targets at room temperature. Field emission properties of the heat-treated a-C:Me films were improved and were found to be dependent on the metal content and variety of metals. After heat-treatment at 550°C in a mixture of acetylene and nitrogen gases, the field emission properties of a-C:Co films were significantly improved, in which Co acted as catalysts to enhance graphitization as well as formation of carbon nanotubes during heat-treatment. A threshold electric field of less than 2 V/μm was obtained from the heat-treated a-C:Co composite films without conditioning. The heat-treated a-C:Al and a-C:Ti films, though the conditioning step could be avoided and relatively low threshold fields could be obtained, exhibited relatively low emission site densities, however. The a-C:Me films, which can be deposited with a high rate at room temperature and require a relatively low temperature, heat-treatment process to enhance electron emission, are promising for practical applications in field emission display.     

Surface energy of metal containing amorphous carbon films deposited by filtered cathodic vacuum arc

Metal containing amorphous carbon (a-C:Me) films including a-C:Al, a-C:Ti, a-C:Ni, a-C:Si were prepared by the filtered cathodic vacuum arc (FCVA) technique with metal-carbon (5 at.% metal) composite targets. The substrate bias ranging from floating to 1000 V was applied. The wettability of the films was examined using the VCA Optima system from AST Products, Inc. Three types of liquid with different polarities were used to study the surface energy changes of the films. X-ray photoelectron spectroscopy (XPS) was used to analyze the composition and chemical state of the films. Atomic force microscopy (AFM) was employed to characterize the morphology and roughness of the films. The contact angle of the a-C:Me films remains relatively constant with different substrate bias. The Al containing films show the highest contact angle with water, which reaches as high as 101°. The Si containing films show the lowest contact angle approximately 64°. The contact angles of Ni and Ti containing films are approximately 80°, 97°, respectively. The harmonic-mean method was used to calculate the polar and depressive component of the surface energy. The absorption of oxygen on the surface plays an important role on the polar component of the a-C:Me films. The formation of AlO and TiO bonds is responsible for their lower polar component. The metal state Ni results in higher polar component. However, the SiO bond is contributed to the high polar component of a-C:Si films. As all films are atomic scale smooth, the RMS roughness is below 0.5 nm, the roughness does not have obvious effect on the surface energy.     

Etching process of hydrogenated amorphous carbon (a-C:H) thin films in a dual ECR–r.f. nitrogen plasma

Hydrogenated amorphous carbon (a-C:H) films deposited from CH₄ in a dual electron cyclotron resonance (ECR)–r.f. plasma were treated in N₂ plasma at different r.f. substrate bias voltages after deposition. The etching process of a-C:H films in N₂ plasma was observed by in situ kinetic ellipsometry, mass spectroscopy (MS), and optical emission spectroscopy (OES). Ex situ atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) were used to characterize the etched film surface. XPS analysis proves that the nitrogen treatment on the a-C:H film, induced by r.f. substrate bias, causes a direct nitrogen incorporation in the film surface up to 15–17 at.% to a depth of about 20–40 Å depending on the r.f. bias. Various bonding states between carbon and nitrogen, such as tetrahedral sp³ C–N, and trigonal sp² C–N were confirmed by the deconvolution analysis of C 1s and N 1s core level spectra. The evolution of etching rate and the surface roughness in the film measured by AFM exhibit a clear dependence on the applied r.f. bias. MS and OES show the various neutral species in the N₂ plasma such as HCN, CN, and C₂N₂, which may be considered as the chemical etching products during the N₂ plasma treatment of a-C:H film.     

Microstructure and adhesion characteristics of diamond-like carbon films deposited on steel substrates

For tribological applications, the low friction coefficient and high microhardness of diamond-like carbon (DLC) films give significant advantages in cutting and forming non-ferrous materials. The inherently large residual stress of DLC films, however, prevents the depositing of thicker films. This study designed and implemented a compound interface, comprising a series of metal, metal nitride, and metal carbonitride interlayers deposited in a graded structure, between the DLC (a metal-doped a-C:H) film and M2 steel substrates. The tribological performance of the interface was evaluated using a scratch tester and ball-on-disk tribometer. Meanwhile, the failure mechanism of DLC deposited on M2 steel substrates was examined using SEM/EDS and TEM microscopy. Experimental results demonstrate an improved DLC hard coating with superior adhesion strength on the steel substrates.     

Piezoresistive,optical and electrical properties of diamond like carbon and carbon nitride films

In the present study diamond like carbon (DLC) and carbon nitride (a-CN_x:H) films were deposited by closed drift ion source from the acetylene and nitrogen gas mixture. The piezoresistive, electrical and optical properties of ion beam synthesized DLC films were investigated. Piezoresistive properties of the diamond like carbon and carbon nitride films were evaluated by four point bending test. The piezoresistors were fabricated on crystalline alumina substrates using Al-based interdigitated finger type electrodes. Effects of the nitrogen concentration on the piezoresistive gauge factor were investigated. The dependence of the resistance of the metal/a-CN_x:H/metal structures on temperature has been studied. Current–voltage (I–V) and capacitance–voltage characteristics were measured for a-CN_x:H/Si heterostructures. The main current transport mechanisms were analyzed. Optical parameters of the synthesized films such as optical bandgap and B parameter (slope of the linear part of the Tauc plot) were investigated to study possible correlation with the piezoresistive properties.     

Fourier transform infrared spectroscopic study of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition

Nitrogen-doped ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite films, which possess n-type conduction with enhanced electrical conductivities, were prepared by pulsed laser deposition and they were structurally studied by Fourier transform infrared (FTIR) spectroscopy. The film with a nitrogen content of 7.9 at.% possessed n-type condition with an electrical conductivity of 18 S/cm at 300 K. The FTIR spectra revealed peaks due to nitrogen impurities, C = N, C-N, and CH_n (n = 1, 2, 3) bands. The sp²-CH_n/(sp²-CH_n + sp³-CH_n), estimated from the area-integration of decomposed peaks, were 24.5 and 19.4% for undoped and 7.9 at.% doped films, respectively. The nitrogen-doping not only form the chemical bonds between carbon and nitrogen atoms such as C = N and C-N bonds but also facilitate the formation of both sp² and sp³ bonds, in particular, the sp³-CH_n bond is preferentially formed. From the analysis of the FTIR spectra, it was found that the hydrogen content in the film is increased with an increase in the nitrogen content. The increased hydrogen content might be owing to the enhanced volume of grain boundaries (GBs) between UNCD grains, and those between UNCD grains and an a-C:H matrix, which is caused by a reduction in the UNCD grain size. The CH_n peaks predominantly come from an a-C:H matrix and GBs. Since the nitrogen-doping for a-C:H has been known to be hardly effective, the n-type conduction with the enhanced electrical conductivities might be attributed to the sp²-CH_n formation at the GBs.     

What makes a dangling bond a binding site for thermal CH3 radicals? — A combined molecular dynamics and potential energy analysis study on amorphous hydrocarbon films

Identification of dangling bonds on amorphous films is not as straight forward as in the case of crystalline materials. The task is further complicated in the case of amorphous hydrocarbon (a-C:H) films by the existence of a wide variety of atomic arrangements. We present a technique based on potential energy analysis of a-C:H films to identify dangling bonds and physisorption sites. However, molecular dynamics simulations of the sticking of thermal CH₃ on a-C:H surfaces show that not all dangling bonds are binding sites for a CH₃ radical. Furthermore, the total sticking coefficient of the surface is not solely linked to the number of dangling bonds and can even decrease for the same number of dangling bonds because the carbon atoms that possess a binding site, active carbon atoms, show drastically different reactivity towards CH₃. The reactivity of active carbon atoms is decided by (a) their type, which is decided by the bonding partners, (b) their distance from the local surface and (c) the local environment. The reactivity of the active carbon atoms can be largely increased by energetic ion bombardment due to hydrogen depletion and local rearrangement.